Polarization pinning at antiphase boundaries in multiferroic YbFeO_(3)

The switching characteristics of ferroelectrics and multiferroics are influenced by the interaction of topological defects with domain walls.We report on the pinning of polarization due to antiphase boundaries in thin films of the multiferroic hexagonal YbFeO_(3).We have directly resolved the atomic structure of a sharp antiphase boundary(APB)in YbFeO_(3) thin films using a combination of aberration-corrected scanning transmission electron microscopy(STEM)and total energy calculations based on density-functional theory(DFT).We find the presence of a layer of FeO_(6) octahedra at the APB that bridges the adjacent domains.STEM imaging shows a reversal in the direction of polarization on moving across the APB,which DFT calculations confirm is structural in nature as the polarization reversal reduces the distortion of the FeO_(6) octahedral layer at the APB.Such APBs in hexagonal perovskites are expected to serve as domain-wall pinning sites and hinder ferroelectric switching of the domains.

Multiferroic monolayers VOX(X = Cl, Br, I): Tunable ferromagnetism via charge doping and ferroelastic switching

The fascinating properties arising from the interaction between different ferroic states of two-dimensional(2D) materials have inspired tremendous research interest in the past few years.Under the first-principles calculations,we predict the coexistence of antiferromagnetic and ferroelastic states in VOX(X=Cl,Br,I) monolayers.The results illustrate that the VOX monolayers exhibit indirect bandgap characteristics,i.e.,their gaps decrease with the halide elements changing from Cl to I.The ground states of all these VOX monolayers are antiferromagnetic(AFM) with the magnetic moments contributed by the V 3d electrons.Furthermore,the magnetic ground state changing from AFM to ferromagnetism(FM) can be realized by doping carriers.In addition,the moderate ferroelastic transition barrier and reversible switching signal ensure their high performances of nonvolatile memory devices.Our findings not only offer an ideal platform for investigating the multiferroic properties,but also provide candidate materials for potential applications in spintronics.

Charge-mediated voltage modulation of magnetism in Hf_(0.5)Zr_(0.5)O_(2)/Co multiferroic heterojunction

We construct the Hall-bar device with the size of several hundred nanometers based on the HZO/Co multiferroic heterojunction. A remarkable voltage-controlled magnetism is observed in the device that possesses both ferroelectric property and perpendicular magnetic anisotropy(PMA). The nucleation field and coercivity can be modulated by voltage pulse while saturation field keeps stable. The non-volatile and reversible voltage-controlled magnetism is ascribable to interfacial charges caused by ferroelectric polarization. Meanwhile, the effective anisotropy energy density(Ku) can also be controlled by voltage pulse, a decrease of 83% and increase of 28% in Kuare realized under-3-V and 3-V pulses,respectively. Because the energy barrier is directly proportional to Ku under a given volume, a decreased or enhanced energy barrier can be controlled by voltage pulse. Thus, it is an effective method to realize low-power and high-stability magneto-resistive random-access memory(MRAM).

Improved multiferroic properties of La-doped 0.6BiFeO_3-0.4SrTiO_3 solid solution ceramics

The 0.6（Bi1-xLax）FeO 3-0.4SrTiO 3（x = 0,0.1） multiferroic ceramics are prepared by a modified Pechini method to study the effect of substitution of SrTiO3 and La in BiFeO3.The X-ray diffraction patterns confirm the single phase characteristics of all the compositions each with a rhombohedral structure.The magnetic properties of the ceramics are significantly improved by a solid solution with SrTiO3 and substitution of La.The values of the dielectric constant ε r and loss tangent tan δ of all the samples decrease with increasing frequency and become constant at room temperature.The La-doped 0.6BiFeO3-0.4SrTiO3 ceramics exhibit improved dielectric and ferroelectric properties,with higher dielectric constant enhanced remnant polarization（Pr） and lower leakage current at room temperature.Compared with a anti-ferromagnetic BiFeO3 compound,the 0.6（Bi0.9La0.1）FeO3-0.4SrTiO3 sample shows the optimal ferromagnetism with remnant magnetization M r ～ 0.135 emμ/g and ferroelectricity with Pr ～ 5.94 μC/cm 2 at room temperature.

Unusual tunability of multiferroicity in GdMn_2O_5 by electric field poling far above multiferroic ordering point

The multiferroicity in the RMn_2O_5 family remains unclear, and less attention has been paid to its dependence on high-temperature(high-T) polarized configuration. Moreover, no consensus on the high-T space group symmetry has been reached so far. In view of this consideration, one may argue that the multiferroicity of RMn_2O_5 in the low-T range depends on the poling sequence starting far above the multiferroic ordering temperature. In this work, we investigate in detail the variation of magnetically induced electric polarization in GdMn_2O_5 and its dependence on electric field poling routine in the high-T range. It is revealed that the multiferroicity does exhibit qualitatively different behaviors if the high-T poling routine changes, indicating the close correlation with the possible high-T polarized state. These emergent phenomena may be qualitatively explained by the co-existence of two low-T polarization components, a scenario that was proposed earlier.One is the component associated with the Mn^(3+)–Mn^(4+)–Mn^(3+) exchange striction that seems to be tightly clamped by the high-T polarized state, and the other is the component associated with the Gd Mn^(3+)–Mn^(4+)–Mn^(3+) exchange striction that is free of the clamping. The present findings may offer a different scheme for the electric control of the multiferroicity in RMn_2O_5.

Thin film processing and multiferroic properties of Fe-BaTiO_3 hybrid composite

Multiferroic bi-layer Fe/BaTiO3 （BTO） thin films were successfully deposited on Pt（200）/MgO（100） substrates using ion beam sputter deposition （1BSD）, and the mutiferroic properties were studied at room temperature. X-ray diffraction （XRD） analyses showed that BTO films were c-axis oriented and epitaxially grown on platinum coated MgO substrates, and （110） epitaxial Fe films were subsequently grown on （001） BTO films. Fe/BTO bi-layer films showed good ferroelectric and ferromagnetic properties at room temperature and the multiferroic coupling was observed, which should be attributed to the hybridization of Fe and Ti occurring at the ferromagnetic-ferroelectric interface.

The magnetic and dielectric properties of multiferroic Sr-substituted Zn_2-Y hexagonal ferrites

The magnetic and dielectric properties of Sr-substituted Zn2-Y hexagonal ferrites （Ba2-x SrxZn2Fe12O22, 1.0 〈 x ≤ 1.5） are studied in this paper. Sr substitution will lead to the variation of cation occupation, which influences both the magnetic and electric properties. As Sr content x rises from 1.0 to 1.5, magnetic hysteresis loop gets wider gradually and the permeability drops rapidly due to the transformation from ferrimagnetic to antiferromagnetic phase. Moreover, permittivity rises with increasing Sr content. Under a certain external magnetic field, the phase transition of helical spin structure of Ba0.5Srl.5Zn2Fe12O22 at about 295 K seems to open a possibility for the room-temperature ferroelectricity induced by magnetic field. But its low resistivity prevents the observation of ferroelectric and magnetoelectric properties at room-temperature.

Magnetoelectric effects in multiferroic Y-type hexaferrites Ba(0.3)Sr(1.7)CoxMg(2-x)Fe(12)O(22)

Y-type hexaferrites with tunable conical magnetic structures are promising single-phase multiferroics that exhibit large magnetoelectric effects. We have investigated the influence of Co substitution on the magnetoelectric properties in the Y-type hexaferrites Ba(0.3)Sr(1.7)CoxMg(2-x)Fe(12)O(22)(x = 0.0, 0.4, 1.0, 1.6). The spin-induced electric polarization can be reversed by applying a low magnetic field for all the samples. The magnetoelectric phase diagrams of BaBa(0.3)Sr(1.7)CoxMg(2-x)Fe(12)O(22) are obtained based on the measurements of magnetic field dependence of dielectric constant at selected temperatures. It is found that the substitution of Co ions can preserve the ferroelectric phase up to a higher temperature, and thus is beneficial for achieving single-phase multiferroics at room temperature.

La-doped BiFeO_3:Synthesis and multiferroic property study

A new sol-foam-gel method was developed to fabricate La-doped BiFeO3 muttiferroic materials. It was demonstrated that a gradual increase in the content of La-doped into BiFeO3 results in its structure changing from rhombohedral to orthorhombic. A study of other property changes indicates that La-doping in BiFeO3 enhances its ferromagnetism and ferroelectricity. A temperature-dependent magnetization study suggests that the magnetic property of La-doped BiFeO3 samples varied from antiferromagnetic to ferromagnetic as the content of La-doped into BiFeO3 increased from 0 to 20%. Unique temperature-dependent zero field cooling （ZFC） and field cooling （FC） magnetization behaviors were observed in 15% La-doped BiFeO3 -- its ZFC temperature-dependent magnetization being ferromagnetic and its FC temperature- dependent magnetization being antiferromagnetic. A possible mechanism of such an interesting M-T behavior is discussed.

Multiferroic behaviour of epitaxial NiFe_2O_4-BaTiO_3 heterostructures

Multiferroic NiFe2O4 （NFO）-BaTiO3 （BTO） bilayered thin films are epitaxially grown on （001） Nb-doped SrTiO3 （STO） substrates by pulsed-laser deposition （PLD）. Different growth sequences of NFO and BTO on the substrate yield two kinds of epitaxial heterostructures with （001）-orientation, i.e. （001）-NFO/（001）-BTO/substrate and （001）- BTO/（001）-NFO/substrate. Microstructure studies from x-ray diffraction （XRD） and electron microscopies show differences between these two heterostructures, which result in different multiferroic behaviours. The heterostructured composite films exhibit good coexistence of both ferroelectric and ferromagnetic properties, in particular, obvious magnetoelectric （ME） effect on coupling response.

Multiferroic phase transitions in manganites RMnO_3:A two-orbital double exchange simulation

The semi-quantum two-orbital exchange model is used to investigate the effect of small rare-earth ion substitution on orthorhombic RMnO 3 with A-type antiferromagnetic order,using the Monte Carlo algorithm,exact diagonalization,and zero-temperature optimization approaches.It is revealed that the substitution results in a rich multiferroic phase diagram where the coexisting A-type antiferromagnetic phase and spiral spin phase,pure spiral spin phase,coexisting spiral spin phase,the E-type antiferromagnetic phase,and the pure E-type antiferromagnetic phase emerge in sequence.The multiferroic phase transitions modulate substantially the electric polarization,which is consistent qualitatively with recent experiments.

Raman phonons in multiferroic FeVO_4 crystals

Multiferroic materials are promising candidates for next-generation multi-functional devices, because of the coexistence of multi-orders and the coupling between the orders. FeVO4 has been confirmed to be a multiferroic compound,since it exhibits both ferroelectricity and antiferromagnetic ordering at low temperatures. In this paper, we have performed careful Raman scattering measurements on high-quality Fe VO4 single crystals. The compound has a very rich phonon structure due to its low crystal symmetry（P- 1） and at least 47 Raman-active phonon modes have been resolved in the low and hightemperature spectra. Most of the observed modes are well assigned with aid of first-principles calculations and symmetry analysis. The present study provides an experimental basis for exploring spin-lattice coupling and the mechanism of multiferroicity in FeVO4

Intrinsic two-dimensional multiferroicity in CrNCl_(2) monolayer

Two-dimensional multiferroics,which simultaneously possess ferroelectricity and magnetism in a single phase,are well-known to possess great potential applications in nanoscale memories and spintronics.On the basis of first-principles calculations,a CrNCl_(2) monolayer is reported as an intrinsic multiferroic.The CrNCl_(2) has an antiferromagnetic ground state,with a N´eel temperature of about 88 K,and it exhibits an in-plane spontaneous polarization of 200 pC/m.The magnetic moments of CrNCl_(2) mainly come from the dxy orbital of the Cr cation,but the plane of the dxy orbital is perpendicular to the direction of the ferroelectric polarization,which hardly suppresses the occurrence of ferroelectricity.Therefore,the multiferroic exits in the CrNCl_(2).In addition,like CrNCl_(2),the CrNBr_(2) is an intrinsic multiferroic with antiferromagneticferroelectric ground state while CrNI_(2) is an intrinsic multiferroic with ferromagnetic-ferroelectric ground state.These findings enrich the multiferroics in the two-dimensional system and enable a wide range of applications in nanoscale devices.

Surface Modification of Multiferroic BiFeO₃Ceramic by Argon Sputtering

Films fabricated by sputter deposit are extensively used in the semiconductor, optical and optoelectronic industries. However, studies to-date have focused only on analyzing the BFO films fabricated by sputter deposition. This paper’s research seeks to fill the gap in understanding the sputter effect on the target in order to fully understand the whole process of fabricating films by sputter deposition. In this study, 3 keV argon ions were continuously sputtered onto a target of multiferroic bismuth ferrite, BiFeO3, (BFO) with 5 mol% BaTiO3, in increasing time intervals. X-ray Photoelectron Spectroscopy (XPS) was applied to examine the sputtered surface after each sputter time interval. This paper makes the following findings. First, the surface-contaminant carbon was almost completely removed after 5120 seconds of sputtering. Second, the study observed two-component oxygen spectra remained after sputtering. Other than the chemi- and physic-sorbed oxygen, these two oxygen components perhaps resulted from the short and long O-Fe bonds due to the displacement of the Fe3+ ions. Third, sputtering resulted in a change of the oxidation states of bismuth from dominant Bi3+ state to equally weighted Bi3+ state and metallic Bi&#176 state. The changes of the bismuth’s oxidation states, i.e., a non-stoichiometric BFO target might alter the film compositions deposited onto the substrate. This paper shows by introducing low pressure oxygen during the sputtering, the metallic Bio on the target can be re-oxidized.

Magnetoelectric effects in multiferroic laminated plates with imperfect interfaces

Two-dimensional （2D） equations for multiferroic （MF） laminated plates with imperfect interfaces are established in this paper. The interface between two adjacent sublayers, which are not perfectly bonded together, is modeled as a general spring-type layer. The mechanical displacements, and the electric and magnetic potentials of the two adjacent layers are assumed to be discontinuous at the interface. As an example, the influences of imperfect interfaces on the magnetoelectric （ME） coupling effects in an MF sandwich plate are investigated with the established 2D governing equations. Numerical results show that the imperfect interfaces have a significant impact on the ME coupling effects in MF laminated structures.

Effect of Zn Substitution on the Magnetic and Magnetocapacitance Properties of Nanosized Multiferroic GaFeO₃Ceramics

This article aims to investigate the possibility to turn the multiferroic orders and magnetocapacitance effect close to/above room temperature in nanosized GaFeO3 ceramics by a sol-gel preparation method and substitution with non-magnetic Zn atoms. Therefore, in this work, we have synthesized a series of nanocrystalline Ga1-xZnxFeO3(GZFO, x = 0, 0.01, 0.05 and 0.1) ceramic samples and study the effect of Zn substitution on their structural, magnetic, and electric properties. All the GZFO samples have an orthorhombic structure with Pc21n space group and the value of lattice parameters increase systematically with increasing Zn concentration. Interestingly, it shows that magnetic and electric properties are strongly dependent on the Zn substitution concentration. Based on the results of temperature-dependent magnetizations, M(T), it is observed that with increasing Zn-content up to 0.10, the ferrimagnetic transition temperature (TC) increases from 306 to 320 K. It is also found that the nanocrystalline Zn-doped GaFeO3 (GFO) samples exhibit the characteristics of ferroelectricity at room temperature. Furthermore, the?magnetization, ferroelectric polarization and magnetocapacitance of Zn-doped GFO nanosized ceramics are enhanced compared to those of the pristine sample of GFO ferrite. These results open wide perspectives for the applications of room temperature multiferroic devices.

Multiferroic properties and exchange bias in Bi_(1-x)Sr_xFeO_3(x=0–0.6) ceramics

Multiferroic properties and exchange bias （EB） in Bi1-xSrxFeO3 （x = 0-0.6） ceramics synthesized by a modified Pechini method are investigated. Sr concentration dependence of structure distorting, ferroelectric properties, and dielectric properties were studied at room temperature. Appropriate Sr doping （x = 0.05-0.2） has been found to decrease the conductivity, enhance ferroelectric properties and give rise to high dielectric constant. Compared with antiferromagnetic BiFeO3 compound, BSFO-x （O≤x ≤0.4） ceramics show weak ferromagnetism at room temperature, and their exchange bias field and vertical magnetization shift are observed and exhibit a strong dependence on the content of Sr. This observed EB effect which keeps stable in BSFO ceramics at 10 K tend to vanish at room temperature with Sr concentration over 0.4.

Theoretical study of mutual control mechanism between magnetization and polarization in multiferroic materials

The mutual control mechanism between magnetization and polarization in multiferroic materials is studied. The system contains a ferromagnetic sublattice and a ferroelectric sublattice. To describe the magneto–electric coupling, we propose a linear coupling Hamiltonian between ferromagnetism and ferroelectricity without microscopic derivation. This coupling enables one to retrieve the hysteresis loops measured experimentally. The thermodynamic properties of the system are calculated, such as the temperature dependences of the magnetization, polarization, internal energy and free energy.The ferromagnetic and ferroelectric hysteresis loops driven by either a magnetic or an electric field are calculated, and the magnetic spin and pseudo-spin are always flipped synchronously under the external magnetic and electric field. Our theoretical results are in agreement with the experiments.

Multiferroicity in B-site ordered double perovskite Y_2MnCrO_6

Double perovskite manganite Y2MnCrO6 ceramic Novel multiferroic properties are displayed with respect is synthesized and its multiferroic properties are investigated. to other multiferroics, such as high ferroelectric phase transi- tion temperature, and the coexistence of ferrimagnetism and ferroelectricity. Moreover, the ferroelectric polarization of Y2MnCrO6 below the magnetic phase temperature can be effectively tuned by an external magnetic field, showing a re- markable magnetoelectric effect. These results open an effective avenue to explore magnetic multiferroics with spontaneous magnetization and ferroelectricity, as well as a high ferroelectric transition temperature.

Nonlinear magneto-mechanical-thermo coupling characteristic analysis for transport behaviors of carriers in composite multiferroic piezoelectric semiconductor nanoplates with surface effect

In this paper,to better reveal the surface effect and the screening effect as well as the nonlinear multi-field coupling characteristic of the multifunctional piezoelectric semiconductor(PS)nanodevice,and to further improve its working performance,a magneto-mechanical-thermo coupling theoretical model is theoretically established for the extensional analysis of a three-layered magneto-electro-semiconductor coupling laminated nanoplate with the surface effect.Next,by using the current theoretical model,some numerical analyses and discussion about the surface effect,the corresponding critical thickness of the nanoplate,and the distributions of the physical fields(including the electron concentration perturbation,the electric potential,the electric field,the average electric displacement,the effective polarization charge density,and the total charge density)under different initial state electron concentrations,as well as their active manipulation via some external magnetic field,pre-stress,and temperature stimuli,are performed.Utilizing the nonlinear multi-field coupling effect induced by inevitable external stimuli in the device operating environment,this paper not only provides theoretical support for understanding the size-dependent tuning/controlling of carrier transport as well as its screening effect,but also assists the design of a series of multiferroic PS nanodevices.