The effect of Sm 2O 3 dopant on the sintering characteristics and dielectric properties of barium zirconium titanate ceramics (BaZr x Ti 1- x O 3) was investigated. It is shown that trace amount of Sm ...The effect of Sm 2O 3 dopant on the sintering characteristics and dielectric properties of barium zirconium titanate ceramics (BaZr x Ti 1- x O 3) was investigated. It is shown that trace amount of Sm 2O 3 can greatly affect the grain growth and densification of barium zirconium titanate ceramics during sintering. At the same time, the dielectric peak at high temperature shifts to lower temperature and that at low temperature shifts to higher temperature. The two dielectric peaks overlap with each other when the Sm 2O 3 dopant content varies from 0 25% to 1%, and the maximum relative dielectric constant is greatly enhanced. These effects may be attributed to the substitution actions of the rare earth element in perovskite lattice. At the doping content of 0 75%, the dielectric constant maximum of 23570 can be obtained. By adopting some proper additives, an excellent Y5V dielective material is obtained, and the room temperature properties are as follows: relative dielectric constant ε RT ≥23,000, dielectric loss tgδ≤0 0075 and the breakdown strength under alternating field E b≥5 kV·mm -1 .展开更多
The influence of the composition （Yb2O3, MgO, CeO2, Li2CO3） on the dielectric properties of medium temperature sintering （Ba, Sr）TiO3 （BST） series capacitor ceramics was investigated by means of conventional tec...The influence of the composition （Yb2O3, MgO, CeO2, Li2CO3） on the dielectric properties of medium temperature sintering （Ba, Sr）TiO3 （BST） series capacitor ceramics was investigated by means of conventional technology process and orthogonal design experiments. The major secondary influencing factors and the influencing tendency of various factor＇s levels for the dielectric properties of BST ceramics were obtained. The optimum formula for maximum dielectric constant （ε） and for minimum dielectric loss （tanδ） was obtained under the experimental conditions. The BST ceramics with optimum comprehensive properties was obtained by means of orthogonal design experiments, with the sintering temperature at 1200 ℃, the dielectric constant 5239, the dielectric loss 0.0097, withstand electric voltage over 6 MV·m^-1, capacitance temperature changing ence of various components on the providing the basis for preparation rate （△C/C） - 75.67%, and suited for Y5V character. The mechanism of the infludielectric properties of medium temperature sintering BST ceramics was studied, thus of multilayer capacitor ceramics and single-chip capacitor ceramics.展开更多
The effect of SiO2 doping on the sintering behavior, microstructure, and dielectric properties of BaTiO3-based ceramics has been investigated. Silica was added to the BaTiO3-based powder prepared by the solid state me...The effect of SiO2 doping on the sintering behavior, microstructure, and dielectric properties of BaTiO3-based ceramics has been investigated. Silica was added to the BaTiO3-based powder prepared by the solid state method with 0.075mol%, 0.15mol%, and 0.3mol%, respectively. The SiO2-doped BaTiO3-based ceramic with high density and uniform grain size were obtained, which were sintered in reducing atmosphere. A scanning electron microscope, X-ray diffraction, and LCR meter were used to determine the microstructure as well as the dielectric properties. SiO2 can form a liquid phase belonging to the ternary system of BaO-TiO2-SiO2, leading to the formation of BaTiO3 ceramics with high density at a lower sintering temperature. The SiO2-doped BaTiO3-based ceramics can be sintered to a theoretical density higher than 95% at 1220℃ with a soaking time of 2 h. The dielectric constants of the sample with 0.15mol% SiO2 addition sintered at 1220℃ is about 9000. Doping with a small amount of silica can improve the sintering and dielectric properties of BaTiO3-based ceramics.展开更多
A glass with composition of B_(2)O_(3)-Bi_(2)O_(3)-SiO_(2)-CaO-BaO-Al_(2)O_(3)-ZrO_(2)(BBSZ)modified Ba_(x)Sr_(1-x)TiO_(3)(BST,x=0.3 and 0.4)ceramics were prepared by a conventional solid state reaction method abided ...A glass with composition of B_(2)O_(3)-Bi_(2)O_(3)-SiO_(2)-CaO-BaO-Al_(2)O_(3)-ZrO_(2)(BBSZ)modified Ba_(x)Sr_(1-x)TiO_(3)(BST,x=0.3 and 0.4)ceramics were prepared by a conventional solid state reaction method abided by a formula of BST+y%BBSZ(y=0,2,4,7,and 10,in mass).The effect of BBSZ glass content on the structure,dielectric properties and energy storage characteristics of the ceramics was investigated.The dielectric constant reduced but the endurable electrical strength enhanced due to the BBSZ glass addition in BST ceramics.In particular,the dielectric loss of the ceramics at elevated temperature(e.g.200℃)can be strongly suppressed from tanδ>20%to tanδ<3% after BBSZ glass modification.For Ba_(0.3)Sr_(0.7)TiO_(3)+2%BBSZ ceramics,an optimized energy storage density(γ=0.63 J/cm^(3))and efficiency(η=91.6%)under an applied electric field of 160 kV/cm was obtained at room temperature.Meanwhile,the temperature dependent polarization-electric field(P-E)hysteresis loops were measured to evaluate the energy storage characteristics of the ceramics potential for high voltage capacitor application at elevated temperatures.展开更多
The effect of Yb2O3 doping amount on the dielectric properties of (Ba, Sr)TiO3 (BST) series capacitor ceramics prepared using solid state reaction method were studied. With the increasing of Yb2O3 doping amount, the d...The effect of Yb2O3 doping amount on the dielectric properties of (Ba, Sr)TiO3 (BST) series capacitor ceramics prepared using solid state reaction method were studied. With the increasing of Yb2O3 doping amount, the dielectric constant(ε) of materials increased, the dielectric loss(tanδ) of materials decreased to minimum when w(Yb2O3) was 0.9%. The BST ceramics with high ε(10000), low tanδ(0.0213) and high DC breakdown voltage(7.2 kV·mm-1) were obtained. The influence of Yb2O3 doping amount on the structure of BST ceramics was studied by means of X-ray diffraction(XRD) and scanning electron microscope. The influencing mechanism of Yb2O3 on the dielectric properties of BST ceramics was studied. The results showed that Yb2O3 doping influenced the properties and structure of BST ceramics by means of forming defect solid solution, but did not influence crystal grain size,the crystal phase was single perovskite structure, did not influence XRD data of BST and did not improve capacitance temperature property greatly, but increase dielectric constant greatly. These results provided the basis for Yb2O3-doped BST series capacitor ceramics.展开更多
文摘The effect of Sm 2O 3 dopant on the sintering characteristics and dielectric properties of barium zirconium titanate ceramics (BaZr x Ti 1- x O 3) was investigated. It is shown that trace amount of Sm 2O 3 can greatly affect the grain growth and densification of barium zirconium titanate ceramics during sintering. At the same time, the dielectric peak at high temperature shifts to lower temperature and that at low temperature shifts to higher temperature. The two dielectric peaks overlap with each other when the Sm 2O 3 dopant content varies from 0 25% to 1%, and the maximum relative dielectric constant is greatly enhanced. These effects may be attributed to the substitution actions of the rare earth element in perovskite lattice. At the doping content of 0 75%, the dielectric constant maximum of 23570 can be obtained. By adopting some proper additives, an excellent Y5V dielective material is obtained, and the room temperature properties are as follows: relative dielectric constant ε RT ≥23,000, dielectric loss tgδ≤0 0075 and the breakdown strength under alternating field E b≥5 kV·mm -1 .
文摘The influence of the composition （Yb2O3, MgO, CeO2, Li2CO3） on the dielectric properties of medium temperature sintering （Ba, Sr）TiO3 （BST） series capacitor ceramics was investigated by means of conventional technology process and orthogonal design experiments. The major secondary influencing factors and the influencing tendency of various factor＇s levels for the dielectric properties of BST ceramics were obtained. The optimum formula for maximum dielectric constant （ε） and for minimum dielectric loss （tanδ） was obtained under the experimental conditions. The BST ceramics with optimum comprehensive properties was obtained by means of orthogonal design experiments, with the sintering temperature at 1200 ℃, the dielectric constant 5239, the dielectric loss 0.0097, withstand electric voltage over 6 MV·m^-1, capacitance temperature changing ence of various components on the providing the basis for preparation rate （△C/C） - 75.67%, and suited for Y5V character. The mechanism of the infludielectric properties of medium temperature sintering BST ceramics was studied, thus of multilayer capacitor ceramics and single-chip capacitor ceramics.
基金supported by the Found No.NSC96-2218-E-020-004-005
文摘The effect of SiO2 doping on the sintering behavior, microstructure, and dielectric properties of BaTiO3-based ceramics has been investigated. Silica was added to the BaTiO3-based powder prepared by the solid state method with 0.075mol%, 0.15mol%, and 0.3mol%, respectively. The SiO2-doped BaTiO3-based ceramic with high density and uniform grain size were obtained, which were sintered in reducing atmosphere. A scanning electron microscope, X-ray diffraction, and LCR meter were used to determine the microstructure as well as the dielectric properties. SiO2 can form a liquid phase belonging to the ternary system of BaO-TiO2-SiO2, leading to the formation of BaTiO3 ceramics with high density at a lower sintering temperature. The SiO2-doped BaTiO3-based ceramics can be sintered to a theoretical density higher than 95% at 1220℃ with a soaking time of 2 h. The dielectric constants of the sample with 0.15mol% SiO2 addition sintered at 1220℃ is about 9000. Doping with a small amount of silica can improve the sintering and dielectric properties of BaTiO3-based ceramics.
基金supported by National Natural Science Foundation of China(51767010)Science&Technology Key Research Project of Jiangxi Provincial Education Department(GJJ170760).
文摘A glass with composition of B_(2)O_(3)-Bi_(2)O_(3)-SiO_(2)-CaO-BaO-Al_(2)O_(3)-ZrO_(2)(BBSZ)modified Ba_(x)Sr_(1-x)TiO_(3)(BST,x=0.3 and 0.4)ceramics were prepared by a conventional solid state reaction method abided by a formula of BST+y%BBSZ(y=0,2,4,7,and 10,in mass).The effect of BBSZ glass content on the structure,dielectric properties and energy storage characteristics of the ceramics was investigated.The dielectric constant reduced but the endurable electrical strength enhanced due to the BBSZ glass addition in BST ceramics.In particular,the dielectric loss of the ceramics at elevated temperature(e.g.200℃)can be strongly suppressed from tanδ>20%to tanδ<3% after BBSZ glass modification.For Ba_(0.3)Sr_(0.7)TiO_(3)+2%BBSZ ceramics,an optimized energy storage density(γ=0.63 J/cm^(3))and efficiency(η=91.6%)under an applied electric field of 160 kV/cm was obtained at room temperature.Meanwhile,the temperature dependent polarization-electric field(P-E)hysteresis loops were measured to evaluate the energy storage characteristics of the ceramics potential for high voltage capacitor application at elevated temperatures.
文摘The effect of Yb2O3 doping amount on the dielectric properties of (Ba, Sr)TiO3 (BST) series capacitor ceramics prepared using solid state reaction method were studied. With the increasing of Yb2O3 doping amount, the dielectric constant(ε) of materials increased, the dielectric loss(tanδ) of materials decreased to minimum when w(Yb2O3) was 0.9%. The BST ceramics with high ε(10000), low tanδ(0.0213) and high DC breakdown voltage(7.2 kV·mm-1) were obtained. The influence of Yb2O3 doping amount on the structure of BST ceramics was studied by means of X-ray diffraction(XRD) and scanning electron microscope. The influencing mechanism of Yb2O3 on the dielectric properties of BST ceramics was studied. The results showed that Yb2O3 doping influenced the properties and structure of BST ceramics by means of forming defect solid solution, but did not influence crystal grain size,the crystal phase was single perovskite structure, did not influence XRD data of BST and did not improve capacitance temperature property greatly, but increase dielectric constant greatly. These results provided the basis for Yb2O3-doped BST series capacitor ceramics.
