We present a systematic analysis of the exciton-recombination zone within all-quantum-dot （QD） multilayer films using sensing QD layers in QD-based light-emitting diodes （QLEDs）, and demonstrate the a11-QD multila...We present a systematic analysis of the exciton-recombination zone within all-quantum-dot （QD） multilayer films using sensing QD layers in QD-based light-emitting diodes （QLEDs）, and demonstrate the a11-QD multilayer films with different sequences of layers prepared by inserting a sensing blue QD layer denoted as B at various positions within four red QD multilayers denoted as R. We also use different hole transporting layers （PVK, CBP as well as poly-TPD） to prevent the formation of leakage current and to improve the luminance. The results show that the total EL emission is mostly at the fourth （60%） and fifth （40%） QD monolayers, adjacent to ITO. This presents both decreasing current density and increasing brightness with different hole transporting layers, thus resulting in more efficient performance.展开更多
基金Supported by the National High Technology Research and Development Program of China under Grant No 2013AA032205the National Natural Science Foundation of China under Grant Nos 11474018,51272022 and 61575019+1 种基金the Specialized Research Fund for the Doctoral Program of Higher Education of China under Grant Nos 20120009130005 and 20130009130001the Technological Development Contract under Grant No HETONG-150188-04E008
文摘We present a systematic analysis of the exciton-recombination zone within all-quantum-dot （QD） multilayer films using sensing QD layers in QD-based light-emitting diodes （QLEDs）, and demonstrate the a11-QD multilayer films with different sequences of layers prepared by inserting a sensing blue QD layer denoted as B at various positions within four red QD multilayers denoted as R. We also use different hole transporting layers （PVK, CBP as well as poly-TPD） to prevent the formation of leakage current and to improve the luminance. The results show that the total EL emission is mostly at the fourth （60%） and fifth （40%） QD monolayers, adjacent to ITO. This presents both decreasing current density and increasing brightness with different hole transporting layers, thus resulting in more efficient performance.
