We experimentally demonstrate a 4 × 4 nonblocking silicon thermo-optic(TO) switch fabric consisting of three stages of tunable generalized Mach–Zehnder interferometers. All 24 routing states for nonblocking swit...We experimentally demonstrate a 4 × 4 nonblocking silicon thermo-optic(TO) switch fabric consisting of three stages of tunable generalized Mach–Zehnder interferometers. All 24 routing states for nonblocking switching are characterized. The device's footprint is 4.6 mm × 1.0 mm. Measurements show that the worst cross talk of all switching states is-7.2 dB. The on-chip insertion loss is in the range of 3.7–13.1 dB. The average TO switching power consumption is 104.8 mW.展开更多
As a promising spectral window for optical communication and sensing, it is of great significance to realize on-chip devices at the 2 μm waveband.The development of the 2 μm silicon photonic platform mainly depends ...As a promising spectral window for optical communication and sensing, it is of great significance to realize on-chip devices at the 2 μm waveband.The development of the 2 μm silicon photonic platform mainly depends on the performance of passive devices.In this work, the passive devices were fabricated in the silicon photonic multi-project wafer process.The designed micro-ring resonator with a 0.6 μm wide silicon ridge waveguide based on a 220 nm silicon-on-insulator platform achieves a high intrinsic quality factor of 3.0 × 105.The propagation loss is calculated as 1.62 d B/cm.In addition,the waveguide crossing, multimode interferometer, and Mach–Zehnder interferometer were demonstrated at 2 μm with good performances.展开更多
基金supported in part by the 863 program (2013AA014402)the National Natural Science Foundation of China (NSFC) (61422508)the Science and Technology Commission of Shanghai Municipality (STCSM) Project (14QA1402600)
文摘We experimentally demonstrate a 4 × 4 nonblocking silicon thermo-optic(TO) switch fabric consisting of three stages of tunable generalized Mach–Zehnder interferometers. All 24 routing states for nonblocking switching are characterized. The device's footprint is 4.6 mm × 1.0 mm. Measurements show that the worst cross talk of all switching states is-7.2 dB. The on-chip insertion loss is in the range of 3.7–13.1 dB. The average TO switching power consumption is 104.8 mW.
基金supported by the National Key Research and Development Program of China (No.2019YFB2203003)National Natural Science Foundation of China (Nos.91950204and 61975179)+2 种基金Open Fund of the State Key Laboratory of Integrated Optoelectronics (No.IOSKL2020KF05)Fundamental Research Funds for the Central UniversitiesZJU Micro-Nano Fabrication Center at Zhejiang University。
文摘As a promising spectral window for optical communication and sensing, it is of great significance to realize on-chip devices at the 2 μm waveband.The development of the 2 μm silicon photonic platform mainly depends on the performance of passive devices.In this work, the passive devices were fabricated in the silicon photonic multi-project wafer process.The designed micro-ring resonator with a 0.6 μm wide silicon ridge waveguide based on a 220 nm silicon-on-insulator platform achieves a high intrinsic quality factor of 3.0 × 105.The propagation loss is calculated as 1.62 d B/cm.In addition,the waveguide crossing, multimode interferometer, and Mach–Zehnder interferometer were demonstrated at 2 μm with good performances.
