Anti-Fowler Temperature Regime in Photoemission from <i>n</i>-Type Semiconductors with Surface Accumulation Layer

According to the Fowler theory and numerous experiments the quantum efficiency for photoemission from conductors increases with temperature. Here we show that an opposite temperature dependence is also possible, when the photoemission is from quasi-metallic surface accumulation layers of n-type semiconductors. This is due to the temperature dependence of the Fermi level energy in semiconductors. The Fermi level energy increases with decreasing temperature;this leads to a decrease of the semiconductor work function and consequently an increase of the quantum efficiency photoemission at constant value of absorbed light quanta of energy. We have calculated this effect for electron accumulation layer in n-GaN, induced by adsorption of positively charged cesium or barium ions. It is found that at low temperatures near liquid nitrogen, the quantum efficiency for photoemission increases to near 55%, which is comparable to the largest values, reported for any known photo-ca-thodes. This phenomenon may prove useful for efficient photo-cathodes operating at low temperatures.

微波等离子体氮化功率对Ti-N氮化层微观结构和性能的影响

目的对纯钛进行微波等离子体氮化处理,研究氮化工艺参数中的微波等离子体氮化功率对氮化层微观结构和性能的影响,以提高纯钛表面的硬度并改善其耐磨性。方法采用微波等离子体化学气相沉积技术,在微波功率为4250、4500、4750、5000 W的条件下,对纯钛表面进行氮化处理。采用X射线衍射仪分析氮化层的物相结构,采用扫描电子显微镜观察氮化层表面和截面的形貌特征,并测量氮化层厚度。通过维氏硬度计和纳米压痕仪测定氮化层的硬度,并通过摩擦磨损测试对材料的耐磨性能进行表征。结果在较低微波功率(4250 W)条件下,等离子体的浓度和活性很低,钛表面出现了TiN_(0.3)相,仅形成较薄的氮化层。随着功率的增大,等离子体的活性和密度增强,扩散机制发生转变,形成了Ti_(2)N和TiN双相结构,氮化层厚度随之增大,从而提高了氮化层的硬度,并提高其耐磨性。在5000 W微波功率下制备的氮化层表现出最佳性能,硬度达到22.84 GPa,摩擦因数仅约为0.1。结论微波功率的变化显著影响基体表面微波等离子体的浓度和活性,进而改变氮化层的物相、结构和性能。

Second-order random wave solutions for interfacial internal waves in N-layer density-stratified fluid

This paper studies the random internal wave equations describing the density interface displacements and the velocity potentials of N-layer stratified fluid contained between two rigid walls at the top and bottom. The density interface displacements and the velocity potentials were solved to the second-order by an expansion approach used by Longuet-Higgins （1963） and Dean （1979） in the study of random surface waves and by Song （2004） in the study of second- order random wave solutions for internal waves in a two-layer fluid. The obtained results indicate that the first-order solutions are a linear superposition of many wave components with different amplitudes, wave numbers and frequencies, and that the amplitudes of first-order wave components with the same wave numbers and frequencies between the adjacent density interfaces are modulated by each other. They also show that the second-order solutions consist of two parts： the first one is the first-order solutions, and the second one is the solutions of the second-order asymptotic equations, which describe the second-order nonlinear modification and the second-order wave-wave interactions not only among the wave components on same density interfaces but also among the wave components between the adjacent density interfaces. Both the first-order and second-order solutions depend on the density and depth of each layer. It is also deduced that the results of the present work include those derived by Song （2004） for second-order random wave solutions for internal waves in a two-layer fluid as a particular case.

Influence of double AlN buffer layers on the qualities of GaN films prepared by metal-organic chemical vapour deposition

In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire （0001） substrate with double A1N buffer layers. The buffer layer consists of a low-temperature （LT） A1N layer and a high-temperature （HT） A1N layer that are grown at 600 ℃ and 1000 ℃, respectively. It is observed that the thickness of the LT-A1N layer drastically influences the quality of GaN thin film, and that the optimized 4.25-min-LT-A1N layer minimizes the dislocation density of GaN thin film. The reason for the improved properties is discussed in this paper.

Application of an Al-doped zinc oxide subcontact layer on vanadium-compensated 6H–SiC photoconductive switches

Al-doped ZnO thin film （AZO） is used as a subcontact layer in 6H-SiC photoconductive semiconductor switches （PCSSs） to reduce the on-state resistance and optimize the device structure. Our photoconductive test shows that the onstate resistance of lateral PCSS with an n＋-AZO subcontact layer is 14.7% lower than that of PCSS without an n＋-AZO subcontact layer. This occurs because a heavy-doped AZO thin film can improve Ohmic contact properties, reduce contact resistance, and alleviate Joule heating. Combined with the high transparance characteristic at 532 nm of AZO film, vertical structural PCSS devices are designed and their structural superiority is discussed. This paper provides a feasible route for fabricating high performance SiC PCSS by using conductive and transparent ZnO-based materials.

Comparative Study on Nitrogen Metabolism and the Nitrogen Maintenance Requirement in Lohmann Brown Roosters and Layers

The objective of this study was to in- vestigate the effect of dietary protein level on nitrogen retention and compare nitrogen metabolism in Lohm- ann Brown adult roosters and layers. The nitrogen ma- intenance requirement （Nm ） was determined based on the nitrogen balance. Thirty Lohmann Brown adult roosters and 30 laying hens at 27 weeks of age were randomly divided into five groups of six birds per group. The birds were fed with one of five diets con- taining 10.46%, 11.77%, 13.79%, 16.77% or 18.29% of crude protein. Nitrogen intake, nitrogen retention and nitrogen retention efficiency were higher in roost- ers than in laying hens, and the average nitrogen re- tention rate for groups fed with CP level of 11.77%, 13.79%, 16.77% and 18. 29% was improved by9.14%. The nitrogen maintenance requirement for Lohmann Brown roosters and laying hens at 27 weeks of age were 0.4245 g/d and 0.5059 g/d, respective- ly, and Nm based on average body weight （BW） and metabolic body weight （ BW^Ts ） was 0.2364 g/kg BW and 0. 2739 g/kg BW~＇75 for laying hens and 0. 2754 g/kg BW and 0. 3208 g/kg BW^72 for roost- ers, respectively. The regression equations for daily N gain （NB, protein accretion） vs. daily N intake （NI ） for Lohrnann Brown layers and roosters were NB = 0.3743NI -0.1589（R2 =0.79） and NB =0.6228NI - 0.3151 （ R2 = 0.85 ）, respectively. The results of this study indicate that nitrogen intake and nitrogen reten- tion at the same dietary CP level were higher in roost- ers than in laying hens.

NUMERICAL SIMULATION OF SUPERSONIC REACTING MIXING LAYER

In this paper, the supersonic chemically reacting mixing layer is simulated with the third order ENN scheme, based on the Navier-Stokes equations, containing transport equations of all species. The numerical results show that the thickness of mixing layer increases gradually along the flow direction, and that the Kelvin-Helmholtz, instabilities may not exist in mixing layer flows.

New CMOS compatible super-junction LDMOST with n-type buried layer

A new super-junction lateral double diffused MOSFET （LDMOST） structure is designed with n-type charge compensation layer embedded in the p^--substrate near the drain to suppress substrate-assisted depletion effect that results from the compensating charges imbalance between the pillars in the n-type buried layer. A high electric field peak is introduced in the surface by the pn junction between the p^--substrate and n-type buried layer, which given rise to a more uniform surface electric field distribution by modulation effect. The effect of reduced bulk field （REBULF） is introduced to improve the vertical breakdown voltage by reducing the high bulk electric field around the drain, The new structure features high breakdown voltage, low on-resistance and charges balance in the drift region due to n-type buried layer.

Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer

Blue InGaN light-emitting diodes （LEDs） with a conventional electron blocking layer （EBL）, a common n-A1GaN hole blocking layer （HBL）, and an n-A1GaN HBL with gradual A1 composition are investigated numerically, which involves analyses of the carrier concentration in the active region, energy band diagram, electrostatic field, and internal quantum efficiency （IQE）. The results indicate that LEDs with an n-AIGaN HBL with gradual AI composition exhibit better hole injection efficiency, lower electron leakage, and a smaller electrostatic field in the active region than LEDs with a conven tional p-A1GaN EBL or a common n-A1GaN HBL. Meanwhile, the efficiency droop is alleviated when an n-A1GaN HBL with gradual A1 composition is used.

Conservation relation of generalized growth rate in boundary layers

The elementary task is to calculate the growth rates of disturbances when the e;method in transition prediction is performed. However, there is no unified knowledge to determine the growth rates of disturbances in three-dimensional（3 D） flows. In this paper, we study the relation among the wave parameters of the disturbance in boundary layers in which the imaginary parts of wave parameters are far smaller than the real parts.The generalized growth rate（GGR） in the direction of group velocity is introduced, and the conservation relation of GGR is strictly deduced in theory. This conservation relation manifests that the GGR only depends on the real parts of wave parameters instead of the imaginary parts. Numerical validations for GGR conservation are also provided in the cases of first/second modes and crossflow modes. The application of GGR to the eN method in 3 D flows is discussed, and the puzzle of determining growth rates in 3 D flows is clarified. A convenient method is also proposed to calculate growth rates of disturbances in 3 D flows. Good agreement between this convenient method and existing methods is found except the condition that the angle between the group velocity direction and the x-direction is close to 90?which can be easily avoided in practical application.

Effects of GaN cap layer thickness on an AlN/GaN heterostructure

In this study, we investigate the effects of Ga N cap layer thickness on the two-dimensional electron gas（2DEG）electron density and 2DEG electron mobility of Al N/Ga N heterostructures by using the temperature-dependent Hall measurement and theoretical fitting method. The results of our analysis clearly indicate that the Ga N cap layer thickness of an Al N/Ga N heterostructure has influences on the 2DEG electron density and the electron mobility. For the Al N/Ga N heterostructures with a 3-nm Al N barrier layer, the optimized thickness of the Ga N cap layer is around 4 nm and the strained a-axis lattice constant of the Al N barrier layer is less than that of Ga N.

Atomic Layer Deposition-Assisted Construction of Binder-Free Ni@N-Doped Carbon Nanospheres Films as Advanced Host for Sulfur Cathode

Rational design of hybrid carbon host with high electrical conductivity and strong adsorption toward soluble lithium polysulfides is the main challenge for achieving high-performance lithium-sulfur batteries(LSBs).Herein,novel binder-free Ni@N-doped carbon nanospheres(N-CNSs)films as sulfur host are firstly synthesized via a facile combined hydrothermal-atomic layer deposition method.The cross-linked multilayer N-CNSs films can effectively enhance the electrical conductivity of electrode and provide physical blocking“dams”toward the soluble long-chain polysulfides.Moreover,the doped N heteroatoms and superficial NiO layer on Ni layer can work synergistically to suppress the shuttle of lithium polysulfides by effective chemical interaction/adsorption.In virtue of the unique composite architecture and reinforced dual physical and chemical adsorption to the soluble polysulfides,the obtained Ni@N-CNSs/S electrode is demonstrated with enhanced rate performance(816 mAh g?1 at 2 C)and excellent long cycling life(87%after 200 cycles at 0.1 C),much better than N-CNSs/S electrode and other carbon/S counterparts.Our proposed design strategy offers a promising prospect for construction of advanced sulfur cathodes for applications in LSBs and other energy storage systems.

Second-order solutions for random interfacial waves in N-layer density-stratified fluid with steady uniform currents

In the present paper, the random interfacial waves in N-layer density-stratified fluids moving at different steady uniform speeds are researched by using an expansion technique, and the second-order asymptotic solutions of the random displacements of the density interfaces and the associated velocity potentials in N-layer fluid are presented based on the small amplitude wave theory. The obtained results indicate that the wave-wave second-order nonlinear interactions of the wave components and the second-order nonlinear interactions between the waves and currents are described. As expected, the solutions include those derived by Chen （2006） as a special case where the steady uniform currents of the N-layer fluids are taken as zero, and the solutions also reduce to those obtained by Song （2005） for second-order solutions for random interfacial waves with steady uniform currents if N = 2.

ANALYSIS OF RECTANGULAR MICROSTRIP PATCH ANTENNA COVERED WITH N-DIELECTRIC LAYERS

A generalized spectral Green’s function formulation of N-layer substrate structure is given with three dimension sources, which is a set of closed form formulas. A full-wave analysis model for rectangular microstrip antennas covered with N-dielectric layers has been established by using the above spectral Green’s function. The unknown surface current density on the niicrostrip patch for such structure is found as a solution of an integral equation. The input VSWR and radiation patterns of the antenna are also obtained. The numerical results have been verified by the experimental results.

High-Pressure Melting Experiments on Basalt-Peridotite Layered Source (KLB-1/N-MORB): Implications for Magma Genesis in Hawaii

In order to understand the melting processes that occur within recycled oceanic crust and mantle in a heterogeneous plume (e.g., that beneath the Hawaiian Islands), a series of high-pressure-high-temperature layered experiments were performed at 2.9 GPa, 5 GPa, and 8 GPa, from 1300°C to 1650°C, using a fertile peridotite KLB-1 and N-MORB. Our experiments at conditions below the dry peridotite solidus produced melt compositions that ranged from basaltic andesite to tholeiite. An Opx reaction band formed between eclogite and peridotite layers, likely via chemical reaction between a silica-rich eclogite-derived partial melt and olivine in the peridotite matrix. At temperatures at or above the dry peridotite solidus, substantial melting occurred in both basalt and peridotite layers, and fully molten basalt melt and melt pockets from the peridotite layer combined. In our layered experiments, major and minor element contents in reacted melts closely matched those of Hawaiian tholeiite and picrite, except for Fe. Partial melts of anhydrous run products had ~55 - 57 wt% SiO2 at low temperature (i.e., were andesitic) and had ~50 - 53 wt% SiO2 at high temperatures, slightly below the dry peridotite solidus (i.e., were tholeiitic, and similar to those that occur during the Hawaii shield-building stage). Based on the Fe- and LREE-enriched signature in Hawaiian tholeiites, we propose that recycled components in the Hawaiian plume are not modern N-MORB, but are Fe-rich tholeiite;a lithology that was common in the Archaean and early Proterozoic. We have demonstrated that the entire compositional spectrum of Hawaiian tholeiites (basalt to picrite) can be formed by basalt-peridotite reactive melting near the dry solidus of peridotite. Based on these results, we propose that the potential temperature of the sub-Hawaiian plume may be much lower than previously estimated.

Bacteria adherence property of molybdenum nitride modified layer on Ti6Al4V alloy

Molybdenum nitride(Mo-N) modified layer on Ti6Al4V alloy was obtained by the plasma surface alloying technique. The bacteria adherence property of the Mo-N modified layer on Ti6Al4V alloy on the oral bacteria Streptococcus Mutans was investigated and compared with that of Ti6Al4V alloy by fluorescence microscopy. The mechanism of the bacteria adherence was discussed. The sample was characterized by X-ray diffractometry(XRD),X-ray photoelectron spectroscopy(XPS) and rough-meter. The results show that the Mo-N modified layer is composed of phase Mo2N(fcc) and Mo2N(tetr). There are Mo 3d,N 1s,C 1s and O 1s in the Mo-N modified layer Ti 2p,O 1s,C 1s,in the Ti6Al4V alloy. The surface roughness(Ra) of Ti6Al4V alloy and the Mo-N modified layer is(0.06±0.01) μm and(0.16±0.01) μm,respectively. The Mo-N modified layer inhibits the bacteria adherence. Mo and N on surface of modified layer play a vital role in inhibiting the bacteria adherence.

A novel LDMOS with a junction field plate and a partial N-buried layer

A novel lateral double-diffused metal–oxide semiconductor（LDMOS） with a high breakdown voltage（BV） and low specific on-resistance（Ron.sp） is proposed and investigated by simulation. It features a junction field plate（JFP） over the drift region and a partial N-buried layer（PNB） in the P-substrate. The JFP not only smoothes the surface electric field（E-field）, but also brings in charge compensation between the JFP and the N-drift region, which increases the doping concentration of the N-drift region. The PNB reshapes the equipotential contours, and thus reduces the E-field peak on the drain side and increases that on the source side. Moreover, the PNB extends the depletion width in the substrate by introducing an additional vertical diode, resulting in a significant improvement on the vertical BV. Compared with the conventional LDMOS with the same dimensional parameters, the novel LDMOS has an increase in BV value by 67.4%,and a reduction in Ron.sp by 45.7% simultaneously.

Exploring the effect of aggregation-induced emission on the excited state intramolecular proton transfer for a bis-imine derivative by quantum mechanics and our own n-layered integrated molecular orbital and molecular mechanics calculations

We theoretically investigate the excited state intramolecular proton transfer(ESIPT) behavior of the novel fluorophore bis-imine derivative molecule HNP which was designed based on the intersection of 1-(hydrazonomethyl)-naphthalene-2-ol and 1-pyrenecarboxaldehyde. Especially, the density functional theory(DFT) and time-dependent density functional theory(TDDFT) methods for HNP monomer are introduced. Moreover, the "our own n-layered integrated molecular orbital and molecular mechanics"(ONIOM) method(TDDFT:universal force field(UFF)) is used to reveal the aggregation-induced emission(AIE) effect on the ESIPT process for HNP in crystal. Our results confirm that the ESIPT process happens upon the photoexcitation for the HNP monomer and HNP in crystal, which is distinctly monitored by the optimized geometric structures and the potential energy curves. In addition, the results of potential energy curves reveal that the ESIPT process in HNP will be promoted by the AIE effect. Furthermore, the highest occupied molecular orbital(HOMO) and lowest unoccupied molecular orbital(LUMO) for the HNP monomer and HNP in crystal have been calculated. The calculation demonstrates that the electron density decrease of proton donor caused by excitation promotes the ESIPT process. In addition, we find that the variation of atomic dipole moment corrected Hirshfeld population(ADCH) charge for proton acceptor induced by the AIE effect facilitates the ESIPT process. The results will be expected to deepen the understanding of ESIPT dynamics for luminophore under the AIE effect and provide insight into future design of high-efficient AIE compounds.

Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers

The AlGaN-based deep ultraviolet light-emitting diodes（LED） with double electron blocking layers（d-EBLs） on both sides of the active region are investigated theoretically. They possess many excellent performances compared with the conventional structure with only a single electron blocking layer, such as a higher recombination rate, improved light output power and internal quantum efficiency（IQE）. The reasons can be concluded as follows. On the one hand, the weakened electrostatic field within the quantum wells（QWs） enhances the electron–hole spatial overlap in QWs, and therefore increases the probability of radioactive recombination. On the other hand, the added n-AlGaN layer can not only prevent holes from overflowing into the n-side region but also act as another electron source, providing more electrons.

基于p-n异质结CuO/TiO_(2)复合物高效的载流子分离能力构建超灵敏AFP光电化学分析

将TiO_(2)纳米粒子与Cu(pta)MOFs复合,通过高温煅烧策略制得CuO/TiO_(2)复合物.在最优实验条件下,基于复合物对可见光更强的吸收利用效率,CuO/TiO_(2)修饰的ITO电极展现出显著的光电化学(PEC)响应信号,其光电流值(59.4μA)分别是单组分TiO_(2)和CuO粒子的15.5和7.4倍.线性扫描伏安法(LSV)测试结果证实CuO/TiO_(2)/ITO电极比CuO和TiO_(2)材料具有更大的LSV响应强度.这可归因于获得的薄片层状CuO粒子及其兼有的多孔隙特征促进了光的多重散射/反射效应,同时CuO/TiO_(2)复合材料具有的典型p-n异质结构(能级带隙匹配)大幅促进了光生电荷载流子(e^(-)/h^(+))的分离与转移.选用戊二醛(GA)作为交联手臂分子,通过温和的醛胺反应将壳聚糖(CS)和anti-AFP抗体组装于CuO/TiO_(2)/ITO电极表面,再用牛血清蛋白(BSA)封闭活性位点,构建出PEC传感平台(BSA/anti-AFP/GA-CS/CuO/TiO_(2)/ITO),实现了对不同浓度甲胎蛋白(AFP)的高灵敏检测(检出限达到2.63×10^(-4) ng/mL).制备的传感电极同时展示出良好的稳定性和选择性.