Carrier separation in a solar cell usually relies on the p–n junction. Here we show that an n–n type inorganic semiconductor heterojunction is also able to separate the exciton for efficient solar cell applications....Carrier separation in a solar cell usually relies on the p–n junction. Here we show that an n–n type inorganic semiconductor heterojunction is also able to separate the exciton for efficient solar cell applications. The n–n type heterojunction was formed by hydrothermal deposition of Sb_(2)(S,Se)_(3) and thermal evaporation of Sb_(2)Se_(3). We found that the n–n junction is able to enhance the carrier separation by the formation of an electric field, reduce the interfacial recombination and generate optimized band alignment. The device based on this n–n junction shows 2.89% net efficiency improvement to 7.75%when compared with the device consisted of semiconductor absorber–metal contact. The study in the n–n type solar cell is expected to bring about more versatile materials utility, new interfacial engineering strategy and fundamental findings in the photovoltaic energy conversion process.展开更多
基金Project supported by Institute of Energy, Hefei Comprehensive National Science Center (Grant No. 21KZS212)the National Key Research and Development Program of China (Grant No. 2019YFA0405600)+2 种基金the National Natural Science Foundation of China (Grant Nos. U19A2092 and 22005293)the China Postdoctoral Science Foundation (Grant No. 2021M693045)Collaborative Innovation Program of Hefei Science Center, Chinese Academy of Sciences。
文摘Carrier separation in a solar cell usually relies on the p–n junction. Here we show that an n–n type inorganic semiconductor heterojunction is also able to separate the exciton for efficient solar cell applications. The n–n type heterojunction was formed by hydrothermal deposition of Sb_(2)(S,Se)_(3) and thermal evaporation of Sb_(2)Se_(3). We found that the n–n junction is able to enhance the carrier separation by the formation of an electric field, reduce the interfacial recombination and generate optimized band alignment. The device based on this n–n junction shows 2.89% net efficiency improvement to 7.75%when compared with the device consisted of semiconductor absorber–metal contact. The study in the n–n type solar cell is expected to bring about more versatile materials utility, new interfacial engineering strategy and fundamental findings in the photovoltaic energy conversion process.
