In order to minimize the hot-carrier effect（HCE）and maintain on-state performance in the high voltage N-type lateral double diffused MOS（N-LDMOS）, an optimized device structure with step gate oxide is proposed. Co...In order to minimize the hot-carrier effect（HCE）and maintain on-state performance in the high voltage N-type lateral double diffused MOS（N-LDMOS）, an optimized device structure with step gate oxide is proposed. Compared with the conventional configuration, the electric field under the gate along the Si-SiO2 interface in the presented N-LDMOS can be greatly reduced, which favors reducing the hot-carrier degradation. The step gate oxide can be achieved by double gate oxide growth, which is commonly used in some smart power ICs. The differences in hot-carrier degradations between the novel structure and the conventional structure are investigated and analyzed by 2D technology computer-aided design（TCAD）numerical simulations, and the optimal length of the thick gate oxide part in the novel N-LDMOS device can also be acquired on the basis of maintaining the characteristic parameters of the conventional device. Finally, the practical degradation measurements of some characteristic parameters can also be carried out. It is found that the hot-carrier degradation of the novel N-LDMOS device can be improved greatly.展开更多
A three-layer structure of n-type organic semiconductors （PTCDA/PTCDA：PCBM/PCBM） is successfully identified as pho- toanode for photoelectrochemical water oxidation during the overall splitting of water into hydrog...A three-layer structure of n-type organic semiconductors （PTCDA/PTCDA：PCBM/PCBM） is successfully identified as pho- toanode for photoelectrochemical water oxidation during the overall splitting of water into hydrogen/oxygen in a nearly stoi- chiometric ratio （H2：O2 = 2：1） under visible irradiation （2 〉 420 nm）. A possible charge separation mechanism under visible light illumination was also proposed.展开更多
基金The Natural Science Foundation of Jiangsu Province(No.BK2008287)the Preresearch Project of the National Natural Science Foundation of Southeast University(No.XJ2008312)
文摘In order to minimize the hot-carrier effect（HCE）and maintain on-state performance in the high voltage N-type lateral double diffused MOS（N-LDMOS）, an optimized device structure with step gate oxide is proposed. Compared with the conventional configuration, the electric field under the gate along the Si-SiO2 interface in the presented N-LDMOS can be greatly reduced, which favors reducing the hot-carrier degradation. The step gate oxide can be achieved by double gate oxide growth, which is commonly used in some smart power ICs. The differences in hot-carrier degradations between the novel structure and the conventional structure are investigated and analyzed by 2D technology computer-aided design（TCAD）numerical simulations, and the optimal length of the thick gate oxide part in the novel N-LDMOS device can also be acquired on the basis of maintaining the characteristic parameters of the conventional device. Finally, the practical degradation measurements of some characteristic parameters can also be carried out. It is found that the hot-carrier degradation of the novel N-LDMOS device can be improved greatly.
基金supported by the National Natural Science Foundation of China (20920102034,20877076 & 20907056)the Major State Basic Research Development Program of China (2010CB933503 &2007CB613306)
文摘A three-layer structure of n-type organic semiconductors （PTCDA/PTCDA：PCBM/PCBM） is successfully identified as pho- toanode for photoelectrochemical water oxidation during the overall splitting of water into hydrogen/oxygen in a nearly stoi- chiometric ratio （H2：O2 = 2：1） under visible irradiation （2 〉 420 nm）. A possible charge separation mechanism under visible light illumination was also proposed.
