We present the drain current modulation for an HEMT using the TCAD SILVACO simulation tool with a drift–diffusion model at ambient temperature. The obtained results show that the decreases of substrate energies induc...We present the drain current modulation for an HEMT using the TCAD SILVACO simulation tool with a drift–diffusion model at ambient temperature. The obtained results show that the decreases of substrate energies induce the decreasing of the obtained drain current similarly to the transconductance, which described the device due to increasing the transferred electrons concentration towards the substrate region, consequently to increase the molar fraction where the concentration of transferred electrons increases from 49 × 10;to 65 × 10;cm;when the molar fraction increases from 0.1 to 0.9. On the other hand, the decrease of molar fraction from 0.9 to 0.1 induces the increasing of drain current by 63%, where it increases from 1.1 mA/mm to 3 mA/mm at V;= 0.6 V and V;= 1 V. This fact leads to ensuring the possibility of using the obtained results of this work related to drain current for producing performances devices that brings together the AC characteristics of HEMT with a weak drain current, which is important in the bioengineering domain.展开更多
文摘采用分子束外延技术对δ掺杂GaAs/AlxGa1 xAs二维电子气(2DEG)样品进行了生长.在样品生长过程中,分别改变掺杂浓度(Nd)、空间隔离层厚度(Wd)和AlxGa1 xAs中Al组分(xAl)的大小,并在双温(300 K,78 K)条件下对生长的样品进行了霍尔测量;结合测试结果,分别对Nd,Wd及xAl与GaAs/AlxGa1 xAs 2DEG的载流子浓度和迁移率之间的关系规律进行了细致的分析讨论.生长了包含有低密度InAs量子点层的δ掺杂GaAs/AlxGa1 xAs2DEG样品,采用梯度生长法得到了不同密度的InAs量子点.霍尔测量结果表明,随着InAs量子点密度的增加,GaAs/AlxGa1 xAs 2DEG的迁移率大幅度减小,实验中获得了密度最低为16×108/cm2的InAs量子点样品.实验结果为内嵌InAs量子点的δ掺杂GaAs/AlxGa1 xAs 2DEG的研究和应用提供了依据和参考.
文摘We present the drain current modulation for an HEMT using the TCAD SILVACO simulation tool with a drift–diffusion model at ambient temperature. The obtained results show that the decreases of substrate energies induce the decreasing of the obtained drain current similarly to the transconductance, which described the device due to increasing the transferred electrons concentration towards the substrate region, consequently to increase the molar fraction where the concentration of transferred electrons increases from 49 × 10;to 65 × 10;cm;when the molar fraction increases from 0.1 to 0.9. On the other hand, the decrease of molar fraction from 0.9 to 0.1 induces the increasing of drain current by 63%, where it increases from 1.1 mA/mm to 3 mA/mm at V;= 0.6 V and V;= 1 V. This fact leads to ensuring the possibility of using the obtained results of this work related to drain current for producing performances devices that brings together the AC characteristics of HEMT with a weak drain current, which is important in the bioengineering domain.
