n-In_2S_3 has been prepared by CVT method.The photoelectrochemical behavior of n- In_2S_3 in a polysulfide redox solution was investigated.It was found that photoetching remarkably increased the fill factor.The maximu...n-In_2S_3 has been prepared by CVT method.The photoelectrochemical behavior of n- In_2S_3 in a polysulfide redox solution was investigated.It was found that photoetching remarkably increased the fill factor.The maximum quantum efficiency of carrier collection reached 95% after 12h irradiation at 100 mW/cm^2 at an applied potential of+1.2V.XPS and Auger analysis were carried out for examining surface and bulk concentration.The photoetching effect could be satisfactorily explained.展开更多
基金the National Natural Science Foundation of China.
文摘n-In_2S_3 has been prepared by CVT method.The photoelectrochemical behavior of n- In_2S_3 in a polysulfide redox solution was investigated.It was found that photoetching remarkably increased the fill factor.The maximum quantum efficiency of carrier collection reached 95% after 12h irradiation at 100 mW/cm^2 at an applied potential of+1.2V.XPS and Auger analysis were carried out for examining surface and bulk concentration.The photoetching effect could be satisfactorily explained.
