We report on the effect of annealing temperature on electrical, interfacial reactions and surface morphological properties of Ni/Cu Schottky contacts on n-type InP. The extracted barrier height of as-deposited Ni/Cu S...We report on the effect of annealing temperature on electrical, interfacial reactions and surface morphological properties of Ni/Cu Schottky contacts on n-type InP. The extracted barrier height of as-deposited Ni/Cu Schottky contact is 0.59 eV (I-V) respectively. The high-quality Schottky contact with barrier height and ideality factor of 0.65 eV (I-V) and 1.15 respectively, can be obtained after annealing at 300℃ for 1 min in a nitrogen atmosphere. However, annealing at 400℃, results the decrease in the barrier height to 0.54 eV (I-V). From the above observations, it is observed that Ni/Cu Schottky contact exhibited excellent electrical properties after annealing at 300℃. Hence, the optimum annealing temperature for the Ni/Cu Schottky contact is 300℃. Furthermore, Cheung’s functions is used to extract the diode parameters including ideality factor, barrier height and series resistance. According to the XRD analysis, the formation of the indium phases at the Ni/Cu/n-InP interface could be the reason for the increase in the barrier height at annealing temperature 300℃. Further, the degradation of the barrier heights after annealing at 400℃ may be due to the formation of phosphide phases at the Ni/Cu/n-InP interface. Scanning electron microscopy (SEM) results show that the overall surface morphology of the Ni/Cu Schottky contact is reasonably smooth.展开更多
We report on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/Ti/n-InP Schottky barrier diodes (SBDs) in the temperature range 160-400 K in steps of 40 K. The barrier heights and ideal...We report on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/Ti/n-InP Schottky barrier diodes (SBDs) in the temperature range 160-400 K in steps of 40 K. The barrier heights and ideality factors of Schottky contact are found in the range 0.35 eV (I-V), 0.73 eV (C-V) at 160 K and 0.63 eV (I-V), 0.61 eV (C-V) at 400 K, respectively. It is observed that the zero-bias barrier height decreases and ideality factor n increase with a decrease in temperature, this behaviour is attributed to barrier inhomogeneities by assuming Gaussian distribution at the interface. The calculated value of series resistance (Rs) from the forward I-V characteristics is decreased with an increase in temperature. The homogeneous barrier height value of approximately 0.71 eV for the Pd/Ti Schottky diode has been obtained from the linear relationship between the temperature-dependent experimentally effective barrier heights and ideality factors. The zero-bias barrier height ( ) versus 1/2kT plot has been drawn to obtain evidence of a Gaussian distribution of the barrier heights and values of = 0.80 eV and = 114 mV for the mean barrier height and standard deviation have been obtained from the plot, respectively. The modified Richardson ln(I0/T2)- ( ) versus 1000/T plot has a good linearity over the investigated temperature range and gives the mean barrier height ( ) and Richardson constant (A*) values as 0.796 eV and 6.16 Acm-2K-2 respectively. The discrepancy between Schottky barrier heights obtained from I-V and C-V measurements is also interpreted.展开更多
磷化铟(InP)材料具有禁带宽度大、电子迁移率高、耐高温、抗辐照等优点,是制备航天器电子器件的优良材料.近地轨道内的质子和α粒子对近地卫星威胁巨大,其在InP电子器件中产生的位移损失效应是导致InP电子器件电学性能下降的主要因素....磷化铟(InP)材料具有禁带宽度大、电子迁移率高、耐高温、抗辐照等优点,是制备航天器电子器件的优良材料.近地轨道内的质子和α粒子对近地卫星威胁巨大,其在InP电子器件中产生的位移损失效应是导致InP电子器件电学性能下降的主要因素.本文使用蒙特卡罗软件Geant4研究近地轨道的质子与α粒子分别经过150μm二氧化硅和2.54 mm铝层屏蔽后,在500/1000/5000μm InP材料中产生的非电离能量损失(non-ionizing energy loss,NIEL)、平均非电离损伤能随深度分布以及年总非电离损伤能.研究发现:低能质子射程短且较易发生非电离反应,入射粒子能谱中低能粒子占比越大,材料厚度越小,NIEL值越大;计算质子和α粒子年总非电离损伤能,质子的年总非电离损伤能占比达98%,表明质子是近地轨道内产生位移损伤的主要因素;α粒子年总非电离损伤能占比小,但其在InP中的NIEL约为质子的2-10倍,应关注α粒子在InP中产生的单粒子位移损伤效应.本文计算为InP材料在空间辐射环境的应用提供了参考依据.展开更多
The development of InGaAs/InP single-photon avalanche photodiodes(SPADs)necessitates the utiliza-tion of a two-element diffusion technique to achieve accurate manipulation of the multiplication width and the dis-tribu...The development of InGaAs/InP single-photon avalanche photodiodes(SPADs)necessitates the utiliza-tion of a two-element diffusion technique to achieve accurate manipulation of the multiplication width and the dis-tribution of its electric field.Regarding the issue of accurately predicting the depth of diffusion in InGaAs/InP SPAD,simulation analysis and device development were carried out,focusing on the dual diffusion behavior of zinc atoms.A formula of X_(j)=k√t-t_(0)+c to quantitatively predict the diffusion depth is obtained by fitting the simulated twice-diffusion depths based on a two-dimensional(2D)model.The 2D impurity morphologies and the one-dimensional impurity profiles for the dual-diffused region are characterized by using scanning electron micros-copy and secondary ion mass spectrometry as a function of the diffusion depth,respectively.InGaAs/InP SPAD devices with different dual-diffusion conditions are also fabricated,which show breakdown behaviors well consis-tent with the simulated results under the same junction geometries.The dark count rate(DCR)of the device de-creased as the multiplication width increased,as indicated by the results.DCRs of 2×10^(6),1×10^(5),4×10^(4),and 2×10^(4) were achieved at temperatures of 300 K,273 K,263 K,and 253 K,respectively,with a bias voltage of 3 V,when the multiplication width was 1.5µm.These results demonstrate an effective prediction route for accu-rately controlling the dual-diffused zinc junction geometry in InP-based planar device processing.展开更多
Doped two-dimensional(2D)materials hold significant promise for advancing many technologies,such as microelectronics,optoelectronics,and energy storage.Herein,n-type 2D oxidized Si nanosheets,namely n-type siloxene(n-...Doped two-dimensional(2D)materials hold significant promise for advancing many technologies,such as microelectronics,optoelectronics,and energy storage.Herein,n-type 2D oxidized Si nanosheets,namely n-type siloxene(n-SX),are employed as Li-ion battery anodes.Via thermal evaporation of sodium hypophosphite at 275℃,P atoms are effectively incorporated into siloxene(SX)without compromising its 2D layered morphology and unique Kautsky-type crystal structure.Further,selective nucleophilic substitution occurs,with only Si atoms being replaced by P atoms in the O_(3)≡Si-H tetrahedra.The resulting n-SX possesses two delocalized electrons arising from the presence of two electron donor types:(i)P atoms residing in Si sites and(ii)H vacancies.The doping concentrations are varied by controlling the amount of precursors or their mean free paths.Even at 2000 mA g^(-1),the n-SX electrode with the optimized doping concentration(6.7×10^(19) atoms cm^(-3))delivers a capacity of 594 mAh g^(-1) with a 73%capacity retention after 500 cycles.These improvements originate from the enhanced kinetics of charge transport processes,including electronic conduction,charge transfer,and solid-state diffusion.The approach proposed herein offers an unprecedented route for engineering SX anodes to boost Li-ion storage.展开更多
文摘We report on the effect of annealing temperature on electrical, interfacial reactions and surface morphological properties of Ni/Cu Schottky contacts on n-type InP. The extracted barrier height of as-deposited Ni/Cu Schottky contact is 0.59 eV (I-V) respectively. The high-quality Schottky contact with barrier height and ideality factor of 0.65 eV (I-V) and 1.15 respectively, can be obtained after annealing at 300℃ for 1 min in a nitrogen atmosphere. However, annealing at 400℃, results the decrease in the barrier height to 0.54 eV (I-V). From the above observations, it is observed that Ni/Cu Schottky contact exhibited excellent electrical properties after annealing at 300℃. Hence, the optimum annealing temperature for the Ni/Cu Schottky contact is 300℃. Furthermore, Cheung’s functions is used to extract the diode parameters including ideality factor, barrier height and series resistance. According to the XRD analysis, the formation of the indium phases at the Ni/Cu/n-InP interface could be the reason for the increase in the barrier height at annealing temperature 300℃. Further, the degradation of the barrier heights after annealing at 400℃ may be due to the formation of phosphide phases at the Ni/Cu/n-InP interface. Scanning electron microscopy (SEM) results show that the overall surface morphology of the Ni/Cu Schottky contact is reasonably smooth.
文摘We report on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/Ti/n-InP Schottky barrier diodes (SBDs) in the temperature range 160-400 K in steps of 40 K. The barrier heights and ideality factors of Schottky contact are found in the range 0.35 eV (I-V), 0.73 eV (C-V) at 160 K and 0.63 eV (I-V), 0.61 eV (C-V) at 400 K, respectively. It is observed that the zero-bias barrier height decreases and ideality factor n increase with a decrease in temperature, this behaviour is attributed to barrier inhomogeneities by assuming Gaussian distribution at the interface. The calculated value of series resistance (Rs) from the forward I-V characteristics is decreased with an increase in temperature. The homogeneous barrier height value of approximately 0.71 eV for the Pd/Ti Schottky diode has been obtained from the linear relationship between the temperature-dependent experimentally effective barrier heights and ideality factors. The zero-bias barrier height ( ) versus 1/2kT plot has been drawn to obtain evidence of a Gaussian distribution of the barrier heights and values of = 0.80 eV and = 114 mV for the mean barrier height and standard deviation have been obtained from the plot, respectively. The modified Richardson ln(I0/T2)- ( ) versus 1000/T plot has a good linearity over the investigated temperature range and gives the mean barrier height ( ) and Richardson constant (A*) values as 0.796 eV and 6.16 Acm-2K-2 respectively. The discrepancy between Schottky barrier heights obtained from I-V and C-V measurements is also interpreted.
基金Supported by the National Natural Science Foundation of China(12027805,62171136,62174166,U2241219)the Science and Technology Commission of Shanghai Municipality(2019SHZDZX01,22JC1402902)the Strategic Priority Research Program of the Chinese Academy of Sciences(XDB43010200)。
基金Supported by the National Natural Science Foundation of China(NSFC)(62174166,11991063,U2241219)Shanghai Municipal Science and Technology Major Project(2019SHZDZX01,22JC1402902)the Strategic Priority Research Program of Chinese Academy of Sciences(XDB43010200)。
文摘磷化铟(InP)材料具有禁带宽度大、电子迁移率高、耐高温、抗辐照等优点,是制备航天器电子器件的优良材料.近地轨道内的质子和α粒子对近地卫星威胁巨大,其在InP电子器件中产生的位移损失效应是导致InP电子器件电学性能下降的主要因素.本文使用蒙特卡罗软件Geant4研究近地轨道的质子与α粒子分别经过150μm二氧化硅和2.54 mm铝层屏蔽后,在500/1000/5000μm InP材料中产生的非电离能量损失(non-ionizing energy loss,NIEL)、平均非电离损伤能随深度分布以及年总非电离损伤能.研究发现:低能质子射程短且较易发生非电离反应,入射粒子能谱中低能粒子占比越大,材料厚度越小,NIEL值越大;计算质子和α粒子年总非电离损伤能,质子的年总非电离损伤能占比达98%,表明质子是近地轨道内产生位移损伤的主要因素;α粒子年总非电离损伤能占比小,但其在InP中的NIEL约为质子的2-10倍,应关注α粒子在InP中产生的单粒子位移损伤效应.本文计算为InP材料在空间辐射环境的应用提供了参考依据.
基金Supported by Shanghai Natural Science Foundation(22ZR1472600).
文摘The development of InGaAs/InP single-photon avalanche photodiodes(SPADs)necessitates the utiliza-tion of a two-element diffusion technique to achieve accurate manipulation of the multiplication width and the dis-tribution of its electric field.Regarding the issue of accurately predicting the depth of diffusion in InGaAs/InP SPAD,simulation analysis and device development were carried out,focusing on the dual diffusion behavior of zinc atoms.A formula of X_(j)=k√t-t_(0)+c to quantitatively predict the diffusion depth is obtained by fitting the simulated twice-diffusion depths based on a two-dimensional(2D)model.The 2D impurity morphologies and the one-dimensional impurity profiles for the dual-diffused region are characterized by using scanning electron micros-copy and secondary ion mass spectrometry as a function of the diffusion depth,respectively.InGaAs/InP SPAD devices with different dual-diffusion conditions are also fabricated,which show breakdown behaviors well consis-tent with the simulated results under the same junction geometries.The dark count rate(DCR)of the device de-creased as the multiplication width increased,as indicated by the results.DCRs of 2×10^(6),1×10^(5),4×10^(4),and 2×10^(4) were achieved at temperatures of 300 K,273 K,263 K,and 253 K,respectively,with a bias voltage of 3 V,when the multiplication width was 1.5µm.These results demonstrate an effective prediction route for accu-rately controlling the dual-diffused zinc junction geometry in InP-based planar device processing.
基金supported by the Basic Science Research Program through the National Research Foundation of Korea(NRF)funded by the Ministry of Education(2020R1A6A1A03045059)+1 种基金by Ministry of Science and ICT(2022R1A2C3003319)by the Institutional Program(2E33221)of the Korea Institute of Science and Technology(KIST).
文摘Doped two-dimensional(2D)materials hold significant promise for advancing many technologies,such as microelectronics,optoelectronics,and energy storage.Herein,n-type 2D oxidized Si nanosheets,namely n-type siloxene(n-SX),are employed as Li-ion battery anodes.Via thermal evaporation of sodium hypophosphite at 275℃,P atoms are effectively incorporated into siloxene(SX)without compromising its 2D layered morphology and unique Kautsky-type crystal structure.Further,selective nucleophilic substitution occurs,with only Si atoms being replaced by P atoms in the O_(3)≡Si-H tetrahedra.The resulting n-SX possesses two delocalized electrons arising from the presence of two electron donor types:(i)P atoms residing in Si sites and(ii)H vacancies.The doping concentrations are varied by controlling the amount of precursors or their mean free paths.Even at 2000 mA g^(-1),the n-SX electrode with the optimized doping concentration(6.7×10^(19) atoms cm^(-3))delivers a capacity of 594 mAh g^(-1) with a 73%capacity retention after 500 cycles.These improvements originate from the enhanced kinetics of charge transport processes,including electronic conduction,charge transfer,and solid-state diffusion.The approach proposed herein offers an unprecedented route for engineering SX anodes to boost Li-ion storage.
