A novel n-buried-pSOI sandwiched structure for an RF power LDMOS is proposed. The output characteristics of the RF power LDMOS are greatly affected by the drain-substrate parasitic capacitance. The output characterist...A novel n-buried-pSOI sandwiched structure for an RF power LDMOS is proposed. The output characteristics of the RF power LDMOS are greatly affected by the drain-substrate parasitic capacitance. The output characteristics become better as the drain-substrate parasitic capacitance decreases. Results show that the drain-substrate capacitance of the n- buried-pSOI sandwiched LDMOS is 46.6% less than that of the normal LDMOS,and 11.5% less than that of the n-buried- pSOI LDMOS,respectively. At l dB compression point,its output power is 188% higher than that of the normal LDMOS, and 10.6% higher than that of the n-buried-pSOI LDMOS, respectively. The power-added efficiency of the proposed structure is 38.3%. The breakdown voltage of the proposed structure is 11% more than that of the normal LDMOS.展开更多
文摘A novel n-buried-pSOI sandwiched structure for an RF power LDMOS is proposed. The output characteristics of the RF power LDMOS are greatly affected by the drain-substrate parasitic capacitance. The output characteristics become better as the drain-substrate parasitic capacitance decreases. Results show that the drain-substrate capacitance of the n- buried-pSOI sandwiched LDMOS is 46.6% less than that of the normal LDMOS,and 11.5% less than that of the n-buried- pSOI LDMOS,respectively. At l dB compression point,its output power is 188% higher than that of the normal LDMOS, and 10.6% higher than that of the n-buried-pSOI LDMOS, respectively. The power-added efficiency of the proposed structure is 38.3%. The breakdown voltage of the proposed structure is 11% more than that of the normal LDMOS.
