Ultra-thin-body （UTB） In0.53Ga0.47As-on-insulator （In0.53Ga0.47As-OI） structures with thicknesses of 8 and 15nm are realized by transferring epitaxially grown In0.53Ga0.47As layers to silicon substrates with 15-nm...Ultra-thin-body （UTB） In0.53Ga0.47As-on-insulator （In0.53Ga0.47As-OI） structures with thicknesses of 8 and 15nm are realized by transferring epitaxially grown In0.53Ga0.47As layers to silicon substrates with 15-nmthick A12 03 as a buried oxide by using the direct wafer bonding method. Back gate n-channel metal-oxidesemiconductor field-effect transistors （nMOSFETs） are fabricated by using these In0.53Ga0.47As-OI structures with excellent electrical characteristics. Positive bias temperature instability （PBTI） and hot carrier injection （HCI） characterizations are performed for the In0.53Ga0.47As-OI nMOSFETs. It is confirmed that the In0.53Ga0.47 As-OI nMOSFETs with a thinner body thickness suffer from more severe degradations under both PBTI and HCr stresses. Moreover, the different evolutions of the threshold voltage and the saturation current of the UTB In0.53Ga0.47As-OI nMOSFETs may be due to the slow border traps.展开更多
This paper presents two n-channel organic heterojunction transistors with modified insulator by using hexadecafiuorophthalocyaninatocopper （F16CuPc）/copper phthalocyanine （CuPc） and F16CuPc/pentacene as the active...This paper presents two n-channel organic heterojunction transistors with modified insulator by using hexadecafiuorophthalocyaninatocopper （F16CuPc）/copper phthalocyanine （CuPc） and F16CuPc/pentacene as the active layers. Compared with a single-layer device, it reports that an improved field-effect mobility and a 6-fold higher drain current are observed. The highest mobility of 0.081 cm^2/（V. s） was obtained from F16CuPc/CuPc heterojunction devices. This result is attributed to the dual effects of the organic heterojunction and interface modification. Furthermore, for two heterojunction devices, the performance of the F16CuPc/CuPc-based transistor is better than that of F16CuPc/pentacene. This is attributed to the morphologic match of two organic components.展开更多
Polymer field-effect transistors operated in the n-channel model with a top-gate/bottom-contact are processed using a solution method. The transistor performance depends on the gate dielectric layer. A high performanc...Polymer field-effect transistors operated in the n-channel model with a top-gate/bottom-contact are processed using a solution method. The transistor performance depends on the gate dielectric layer. A high performance polymer transistor is achieved, with the saturated electron mobility of about 0.46cm2/Vs, threshold voltage nearly 0 V and subthreshold sway of about 0.9 V/decade, employing a polystyrene （PS） dielectric layer. The transistor performances are further improved with increasing current and lower operation voltages by utilizing a bi-layer gate dielectric, comprising a thin PS dielectric layer adjacent to the semiconductor to minimize the density of the interface traps for obtaining a small VT, a large μ and a poly（methyl methacrylate） （PMMA） dielectric layer with a relatively high-k adjacent to the gate electrode for enlarging the capacitance, processed from the orthogonal solvents.展开更多
Owing to the conductivity modulation of silicon carbide（Si C） bipolar devices, n-channel insulated gate bipolar transistors（n-IGBTs） have a significant advantage over metal oxide semiconductor field effect transis...Owing to the conductivity modulation of silicon carbide（Si C） bipolar devices, n-channel insulated gate bipolar transistors（n-IGBTs） have a significant advantage over metal oxide semiconductor field effect transistors（MOSFETs） in ultra high voltage（UHV） applications. In this paper, backside grinding and laser annealing process were carried out to fabricate 4 H-Si C n-IGBTs. The thickness of a drift layer was 120 μm, which was designed for a blocking voltage of 13 k V. The n-IGBTs carried a collector current density of 24 A/cm^2 at a power dissipation of300 W/cm^2 when the gate voltage was 20 V, with a differential specific on-resistance of 140 mΩ·cm^2.展开更多
Large π-conjugated pyrene-phenazine monoimide and bisimides were synthesized by imine condensation reaction. These imides form well ordered 1D nanotapes upon self-assembly in solution. Electrochemical and electric co...Large π-conjugated pyrene-phenazine monoimide and bisimides were synthesized by imine condensation reaction. These imides form well ordered 1D nanotapes upon self-assembly in solution. Electrochemical and electric conductivity measurement reveal it can be served as an n-channel semiconductor with large charge carrier mobility up to 4.1 cm^2 V^-1 s^-1. Both alkylated imides are highly luminescent, and can be quenched via protonization using trifluoroacetic acid, which could be served as potential colorimetric acid sensors.展开更多
在n-Rayleigh信道下,研究了使用选择合并(SC)接收的移动无线传感器网络系统的平均符号误码率(ASEP)和信道容量。基于矩生成函数(MGF)方法,推导了系统采用相干检测的相移键控调制(PSK),正交幅度调制(QAM),脉冲幅度调制(PAM)等数字调制方...在n-Rayleigh信道下,研究了使用选择合并(SC)接收的移动无线传感器网络系统的平均符号误码率(ASEP)和信道容量。基于矩生成函数(MGF)方法,推导了系统采用相干检测的相移键控调制(PSK),正交幅度调制(QAM),脉冲幅度调制(PAM)等数字调制方式的ASEP的精确表达式。同时,也得到了系统信道容量的精确表达式。然后对不同条件下的ASEP和信道容量性能做了数值仿真,理论分析结果与仿真结果相吻合,验证了理论分析结果的正确性。仿真结果表明:随着分集支路数的增加,系统的ASEP和信道容量性能得到了很好的改善,当使用QPSK调制,信噪比为16 d B时,分集支路数L=1,系统的误码率是6×10-2,信道容量是4(bit/s)/Hz;分集支路数L=2,系统的误码率是1×10-2,信道容量是5.1(bit/s)/Hz;分集支路数L=3,系统的误码率是2×10-3,信道容量是5.8(bit/s)/Hz。展开更多
目的ω-芋螺毒素SO3是通过分子生物学手段从海洋生物线纹芋螺中提取的一种多肽,为新型、特异性N型电压敏感性钙离子通道阻滞剂。观察鞘内注射(it)ω-芋螺毒素SO3对大鼠坐骨神经慢性压迫性损伤(CC I模型)所致神经痛的镇痛作用,以及对背...目的ω-芋螺毒素SO3是通过分子生物学手段从海洋生物线纹芋螺中提取的一种多肽,为新型、特异性N型电压敏感性钙离子通道阻滞剂。观察鞘内注射(it)ω-芋螺毒素SO3对大鼠坐骨神经慢性压迫性损伤(CC I模型)所致神经痛的镇痛作用,以及对背根神经节(DRG)细胞内Ca2+含量的影响。方法♂SD大鼠40只,随机均分为5组,即正常对照组(N组)、CC I后14 d组(C组)、CC I 14 d it生理盐水组(CN组)、CC I 14 d it SO3 600 ng组(CS 1组)和CC I 7 d后连续鞘内注射SO3 30 ng.h-1共7 d组(CS 7组)。观察各组动物热痛觉过敏及机械刺激痛觉异常的反应阈值,并测定DRG细胞内Ca2+含量。结果CC I 14 d时结扎侧与非结扎侧热及机械刺激痛阈值均下降,同时DRG细胞内Ca2+含量也升高。it SO3后,结扎侧及非结扎侧痛阈值均升高,而DRG细胞内Ca2+含量降低。结论it SO3对慢性神经痛有镇痛作用,同时可以抑制CC I引起的DRG细胞内Ca2+含量增加,提示DRG细胞N型Ca2+电流在此伤害性信息传递中起作用。展开更多
基金Supported by the National Program on Key Basic Research Project of China under Grant No 2011CBA00607the National Natural Science Foundation of China under Grant Nos 61106089 and 61376097the Zhejiang Provincial Natural Science Foundation of China under Grant No LR14F040001
文摘Ultra-thin-body （UTB） In0.53Ga0.47As-on-insulator （In0.53Ga0.47As-OI） structures with thicknesses of 8 and 15nm are realized by transferring epitaxially grown In0.53Ga0.47As layers to silicon substrates with 15-nmthick A12 03 as a buried oxide by using the direct wafer bonding method. Back gate n-channel metal-oxidesemiconductor field-effect transistors （nMOSFETs） are fabricated by using these In0.53Ga0.47As-OI structures with excellent electrical characteristics. Positive bias temperature instability （PBTI） and hot carrier injection （HCI） characterizations are performed for the In0.53Ga0.47As-OI nMOSFETs. It is confirmed that the In0.53Ga0.47 As-OI nMOSFETs with a thinner body thickness suffer from more severe degradations under both PBTI and HCr stresses. Moreover, the different evolutions of the threshold voltage and the saturation current of the UTB In0.53Ga0.47As-OI nMOSFETs may be due to the slow border traps.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60806007)the Shanghai ‘Post-Qi-Ming-Xing Plan’ for Young Scientists,China (Grant No. 07QA14023)the Shanghai Committee of Science and Technology (Grant Nos. 08DZ1140702 and 08520511200)
文摘This paper presents two n-channel organic heterojunction transistors with modified insulator by using hexadecafiuorophthalocyaninatocopper （F16CuPc）/copper phthalocyanine （CuPc） and F16CuPc/pentacene as the active layers. Compared with a single-layer device, it reports that an improved field-effect mobility and a 6-fold higher drain current are observed. The highest mobility of 0.081 cm^2/（V. s） was obtained from F16CuPc/CuPc heterojunction devices. This result is attributed to the dual effects of the organic heterojunction and interface modification. Furthermore, for two heterojunction devices, the performance of the F16CuPc/CuPc-based transistor is better than that of F16CuPc/pentacene. This is attributed to the morphologic match of two organic components.
基金Supported by the National Natural Science Foundation of China under Grant No 61177028
文摘Polymer field-effect transistors operated in the n-channel model with a top-gate/bottom-contact are processed using a solution method. The transistor performance depends on the gate dielectric layer. A high performance polymer transistor is achieved, with the saturated electron mobility of about 0.46cm2/Vs, threshold voltage nearly 0 V and subthreshold sway of about 0.9 V/decade, employing a polystyrene （PS） dielectric layer. The transistor performances are further improved with increasing current and lower operation voltages by utilizing a bi-layer gate dielectric, comprising a thin PS dielectric layer adjacent to the semiconductor to minimize the density of the interface traps for obtaining a small VT, a large μ and a poly（methyl methacrylate） （PMMA） dielectric layer with a relatively high-k adjacent to the gate electrode for enlarging the capacitance, processed from the orthogonal solvents.
文摘Owing to the conductivity modulation of silicon carbide（Si C） bipolar devices, n-channel insulated gate bipolar transistors（n-IGBTs） have a significant advantage over metal oxide semiconductor field effect transistors（MOSFETs） in ultra high voltage（UHV） applications. In this paper, backside grinding and laser annealing process were carried out to fabricate 4 H-Si C n-IGBTs. The thickness of a drift layer was 120 μm, which was designed for a blocking voltage of 13 k V. The n-IGBTs carried a collector current density of 24 A/cm^2 at a power dissipation of300 W/cm^2 when the gate voltage was 20 V, with a differential specific on-resistance of 140 mΩ·cm^2.
基金supported by the National Natural Science Foundation of China(Nos. 51522303, 21602154)National Key R&D Program of China (No. 2017YFA0207500)the Thousand Youth Talents Plan
文摘Large π-conjugated pyrene-phenazine monoimide and bisimides were synthesized by imine condensation reaction. These imides form well ordered 1D nanotapes upon self-assembly in solution. Electrochemical and electric conductivity measurement reveal it can be served as an n-channel semiconductor with large charge carrier mobility up to 4.1 cm^2 V^-1 s^-1. Both alkylated imides are highly luminescent, and can be quenched via protonization using trifluoroacetic acid, which could be served as potential colorimetric acid sensors.
文摘在n-Rayleigh信道下,研究了使用选择合并(SC)接收的移动无线传感器网络系统的平均符号误码率(ASEP)和信道容量。基于矩生成函数(MGF)方法,推导了系统采用相干检测的相移键控调制(PSK),正交幅度调制(QAM),脉冲幅度调制(PAM)等数字调制方式的ASEP的精确表达式。同时,也得到了系统信道容量的精确表达式。然后对不同条件下的ASEP和信道容量性能做了数值仿真,理论分析结果与仿真结果相吻合,验证了理论分析结果的正确性。仿真结果表明:随着分集支路数的增加,系统的ASEP和信道容量性能得到了很好的改善,当使用QPSK调制,信噪比为16 d B时,分集支路数L=1,系统的误码率是6×10-2,信道容量是4(bit/s)/Hz;分集支路数L=2,系统的误码率是1×10-2,信道容量是5.1(bit/s)/Hz;分集支路数L=3,系统的误码率是2×10-3,信道容量是5.8(bit/s)/Hz。
文摘目的ω-芋螺毒素SO3是通过分子生物学手段从海洋生物线纹芋螺中提取的一种多肽,为新型、特异性N型电压敏感性钙离子通道阻滞剂。观察鞘内注射(it)ω-芋螺毒素SO3对大鼠坐骨神经慢性压迫性损伤(CC I模型)所致神经痛的镇痛作用,以及对背根神经节(DRG)细胞内Ca2+含量的影响。方法♂SD大鼠40只,随机均分为5组,即正常对照组(N组)、CC I后14 d组(C组)、CC I 14 d it生理盐水组(CN组)、CC I 14 d it SO3 600 ng组(CS 1组)和CC I 7 d后连续鞘内注射SO3 30 ng.h-1共7 d组(CS 7组)。观察各组动物热痛觉过敏及机械刺激痛觉异常的反应阈值,并测定DRG细胞内Ca2+含量。结果CC I 14 d时结扎侧与非结扎侧热及机械刺激痛阈值均下降,同时DRG细胞内Ca2+含量也升高。it SO3后,结扎侧及非结扎侧痛阈值均升高,而DRG细胞内Ca2+含量降低。结论it SO3对慢性神经痛有镇痛作用,同时可以抑制CC I引起的DRG细胞内Ca2+含量增加,提示DRG细胞N型Ca2+电流在此伤害性信息传递中起作用。
