钙钛矿太阳能电池(perovskite solar cells,PSCs)由于光电转换效率高、制备工艺简单、成本低等优势受到广泛关注,电池效率已从3.8%提升到25.7%。目前,对基于SnO_(2)电子传输层的n-i-p型平板结构电池的研究越来越多,但存在着工艺可重复...钙钛矿太阳能电池(perovskite solar cells,PSCs)由于光电转换效率高、制备工艺简单、成本低等优势受到广泛关注,电池效率已从3.8%提升到25.7%。目前,对基于SnO_(2)电子传输层的n-i-p型平板结构电池的研究越来越多,但存在着工艺可重复性差、效率低等问题。针对n-i-p型平板结构PSCs的制备进行了系统的研究,包括导电基底的选择、钙钛矿制备工艺参数的优化以及电池存储环境。结果证明,上述参数对于电池均具有重要影响,并结合扫描电子显微镜、X射线衍射、吸收光谱分析了原因。在最优工艺条件下(掺锡氧化铟基底,PbI_(2)退火温度70℃(1 min),胺盐溶液滴加后静置时间不超过5 s,存储湿度4.5%),器件平均效率达到21.85%,最高效率达到23.47%,迟滞可忽略,具有良好的可重复性。研究结果可为制备重复性好、光电转换效率高的PSCs提供科学支撑。展开更多
High pressure radio frequency plasma enhanced chemical vapor deposition(RF-PECVD)process was adopted to investigate the effect of constant hydrogen dilution technique and gradient hydrogen dilu-tion technique on the s...High pressure radio frequency plasma enhanced chemical vapor deposition(RF-PECVD)process was adopted to investigate the effect of constant hydrogen dilution technique and gradient hydrogen dilu-tion technique on the structural evolution of intrinsic films and the performance of n-i-p microcrystal-line silicon solar cells.The experiment results demonstrated that the grain size and crystalline volume fraction along the growth direction of intrinsic films can be controlled and the performance of solar cells can be greatly improved by gradient hydrogen dilution technique.An initial active-area efficiency of 5.7%(Voc=0.47V,Jsc=20.2mA/cm2,FF=60%)for the μc-Si:H single-junction n-i-p solar cells and an initial active-area efficiency of 10.12%(Voc=1.2V,Jsc=12.05mA/cm2,FF=70%)for the a-Si:H/μc-Si:H tandem n-i-p solar cells has been achieved.展开更多
Hydrogenated microcrystalline silicon （μc-Si：H） intrinsic films and solar cells with n-i-p configuration were prepared by plasma enhanced chemical vapor deposition （PECVD）. The influence of n/i and i/p buffer la...Hydrogenated microcrystalline silicon （μc-Si：H） intrinsic films and solar cells with n-i-p configuration were prepared by plasma enhanced chemical vapor deposition （PECVD）. The influence of n/i and i/p buffer layers on the μc-Si：H cell performance was studied in detail. The experimental results demonstrated that the efficiency is much improved when there is a higher crystallinity at n/i interface and an optimized a-Si：H buffer layer at i/p interface. By combining the above methods, the performance of μc-Si：H single-junction and a-Si：H/μc-Si：H tandem solar cells has been significantly improved.展开更多
GaN-based vertical P-i-N diode with mesa edge terminal structure due to electric field crowding effect, the breakdown voltage of the device is significantly reduced. This work investigates three terminal structures, i...GaN-based vertical P-i-N diode with mesa edge terminal structure due to electric field crowding effect, the breakdown voltage of the device is significantly reduced. This work investigates three terminal structures, including deeply etched, bevel, and stepped-mesas terminal structures, to suppress electric field crowding effects at the device and junction edges. Deeply-etched mesa terminal yields a breakdown voltage of 1205 V, i.e., 89% of the ideal voltage. The bevel-mesa terminal achieves about 89% of the ideal breakdown voltage, while the step-mesa terminal is less effective in mitigating electric field crowding, at about 32% of the ideal voltage. This work can provide an important reference for the design of high-power, high-voltage GaN-based P-i-N power devices, finding a terminal protection structure suitable for GaNPiN diodes to further enhance the breakdown performance of the device and to unleash the full potential of GaN semiconductor materials.展开更多
文摘钙钛矿太阳能电池(perovskite solar cells,PSCs)由于光电转换效率高、制备工艺简单、成本低等优势受到广泛关注,电池效率已从3.8%提升到25.7%。目前,对基于SnO_(2)电子传输层的n-i-p型平板结构电池的研究越来越多,但存在着工艺可重复性差、效率低等问题。针对n-i-p型平板结构PSCs的制备进行了系统的研究,包括导电基底的选择、钙钛矿制备工艺参数的优化以及电池存储环境。结果证明,上述参数对于电池均具有重要影响,并结合扫描电子显微镜、X射线衍射、吸收光谱分析了原因。在最优工艺条件下(掺锡氧化铟基底,PbI_(2)退火温度70℃(1 min),胺盐溶液滴加后静置时间不超过5 s,存储湿度4.5%),器件平均效率达到21.85%,最高效率达到23.47%,迟滞可忽略,具有良好的可重复性。研究结果可为制备重复性好、光电转换效率高的PSCs提供科学支撑。
基金Supported by the National Basic Research Program of China("973" Program)(Grant Nos.2006CB202602,2006CB202603)the Tianjin Assistant Foundation for the National Basic Research Program of China(Grant No.07QTPTJC29500)
文摘High pressure radio frequency plasma enhanced chemical vapor deposition(RF-PECVD)process was adopted to investigate the effect of constant hydrogen dilution technique and gradient hydrogen dilu-tion technique on the structural evolution of intrinsic films and the performance of n-i-p microcrystal-line silicon solar cells.The experiment results demonstrated that the grain size and crystalline volume fraction along the growth direction of intrinsic films can be controlled and the performance of solar cells can be greatly improved by gradient hydrogen dilution technique.An initial active-area efficiency of 5.7%(Voc=0.47V,Jsc=20.2mA/cm2,FF=60%)for the μc-Si:H single-junction n-i-p solar cells and an initial active-area efficiency of 10.12%(Voc=1.2V,Jsc=12.05mA/cm2,FF=70%)for the a-Si:H/μc-Si:H tandem n-i-p solar cells has been achieved.
基金supported by the State Key Development Program for Basic Research of China (Nos. 2006CB202602, 2006CB202603)the Tianjin Assistant Foundation for the National Basic Research Program of China (No. 07QTPTJC29500).
文摘Hydrogenated microcrystalline silicon （μc-Si：H） intrinsic films and solar cells with n-i-p configuration were prepared by plasma enhanced chemical vapor deposition （PECVD）. The influence of n/i and i/p buffer layers on the μc-Si：H cell performance was studied in detail. The experimental results demonstrated that the efficiency is much improved when there is a higher crystallinity at n/i interface and an optimized a-Si：H buffer layer at i/p interface. By combining the above methods, the performance of μc-Si：H single-junction and a-Si：H/μc-Si：H tandem solar cells has been significantly improved.
文摘GaN-based vertical P-i-N diode with mesa edge terminal structure due to electric field crowding effect, the breakdown voltage of the device is significantly reduced. This work investigates three terminal structures, including deeply etched, bevel, and stepped-mesas terminal structures, to suppress electric field crowding effects at the device and junction edges. Deeply-etched mesa terminal yields a breakdown voltage of 1205 V, i.e., 89% of the ideal voltage. The bevel-mesa terminal achieves about 89% of the ideal breakdown voltage, while the step-mesa terminal is less effective in mitigating electric field crowding, at about 32% of the ideal voltage. This work can provide an important reference for the design of high-power, high-voltage GaN-based P-i-N power devices, finding a terminal protection structure suitable for GaNPiN diodes to further enhance the breakdown performance of the device and to unleash the full potential of GaN semiconductor materials.
