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Exploring the effect of aggregation-induced emission on the excited state intramolecular proton transfer for a bis-imine derivative by quantum mechanics and our own n-layered integrated molecular orbital and molecular mechanics calculations
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作者 赵慧芳 孙朝范 +2 位作者 刘晓春 尹航 石英 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第1期645-649,共5页
We theoretically investigate the excited state intramolecular proton transfer(ESIPT) behavior of the novel fluorophore bis-imine derivative molecule HNP which was designed based on the intersection of 1-(hydrazonometh... We theoretically investigate the excited state intramolecular proton transfer(ESIPT) behavior of the novel fluorophore bis-imine derivative molecule HNP which was designed based on the intersection of 1-(hydrazonomethyl)-naphthalene-2-ol and 1-pyrenecarboxaldehyde. Especially, the density functional theory(DFT) and time-dependent density functional theory(TDDFT) methods for HNP monomer are introduced. Moreover, the "our own n-layered integrated molecular orbital and molecular mechanics"(ONIOM) method(TDDFT:universal force field(UFF)) is used to reveal the aggregation-induced emission(AIE) effect on the ESIPT process for HNP in crystal. Our results confirm that the ESIPT process happens upon the photoexcitation for the HNP monomer and HNP in crystal, which is distinctly monitored by the optimized geometric structures and the potential energy curves. In addition, the results of potential energy curves reveal that the ESIPT process in HNP will be promoted by the AIE effect. Furthermore, the highest occupied molecular orbital(HOMO) and lowest unoccupied molecular orbital(LUMO) for the HNP monomer and HNP in crystal have been calculated. The calculation demonstrates that the electron density decrease of proton donor caused by excitation promotes the ESIPT process. In addition, we find that the variation of atomic dipole moment corrected Hirshfeld population(ADCH) charge for proton acceptor induced by the AIE effect facilitates the ESIPT process. The results will be expected to deepen the understanding of ESIPT dynamics for luminophore under the AIE effect and provide insight into future design of high-efficient AIE compounds. 展开更多
关键词 time-dependent density functional theory(TDDFT) METHOD excited state intramolecular proton transfer(ESIPT) our own n-layered integrated MOLECULAR orbital and MOLECULAR mechanics(ONIOM) METHOD potential energy curves atomic dipole moment corrected Hirshfeld population(ADCH) charge
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Second-order random wave solutions for interfacial internal waves in N-layer density-stratified fluid 被引量:3
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作者 陈小刚 宋金宝 《Chinese Physics B》 SCIE EI CAS CSCD 2006年第4期756-766,共11页
This paper studies the random internal wave equations describing the density interface displacements and the velocity potentials of N-layer stratified fluid contained between two rigid walls at the top and bottom. The... This paper studies the random internal wave equations describing the density interface displacements and the velocity potentials of N-layer stratified fluid contained between two rigid walls at the top and bottom. The density interface displacements and the velocity potentials were solved to the second-order by an expansion approach used by Longuet-Higgins (1963) and Dean (1979) in the study of random surface waves and by Song (2004) in the study of second- order random wave solutions for internal waves in a two-layer fluid. The obtained results indicate that the first-order solutions are a linear superposition of many wave components with different amplitudes, wave numbers and frequencies, and that the amplitudes of first-order wave components with the same wave numbers and frequencies between the adjacent density interfaces are modulated by each other. They also show that the second-order solutions consist of two parts: the first one is the first-order solutions, and the second one is the solutions of the second-order asymptotic equations, which describe the second-order nonlinear modification and the second-order wave-wave interactions not only among the wave components on same density interfaces but also among the wave components between the adjacent density interfaces. Both the first-order and second-order solutions depend on the density and depth of each layer. It is also deduced that the results of the present work include those derived by Song (2004) for second-order random wave solutions for internal waves in a two-layer fluid as a particular case. 展开更多
关键词 n-layer density-stratified fluid interracial internal waves second-order random wave solutions
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Second-order solutions for random interfacial waves in N-layer density-stratified fluid with steady uniform currents
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作者 陈小刚 郭志萍 宋金宝 《Chinese Physics B》 SCIE EI CAS CSCD 2008年第9期3387-3393,共7页
In the present paper, the random interfacial waves in N-layer density-stratified fluids moving at different steady uniform speeds are researched by using an expansion technique, and the second-order asymptotic solutio... In the present paper, the random interfacial waves in N-layer density-stratified fluids moving at different steady uniform speeds are researched by using an expansion technique, and the second-order asymptotic solutions of the random displacements of the density interfaces and the associated velocity potentials in N-layer fluid are presented based on the small amplitude wave theory. The obtained results indicate that the wave-wave second-order nonlinear interactions of the wave components and the second-order nonlinear interactions between the waves and currents are described. As expected, the solutions include those derived by Chen (2006) as a special case where the steady uniform currents of the N-layer fluids are taken as zero, and the solutions also reduce to those obtained by Song (2005) for second-order solutions for random interfacial waves with steady uniform currents if N = 2. 展开更多
关键词 n-layer density-stratified fluid uniform currents random interracial waves secondorder solutions
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ANALYSIS OF RECTANGULAR MICROSTRIP PATCH ANTENNA COVERED WITH N-DIELECTRIC LAYERS
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作者 Ye Chunfei(Shanghai Tiedao University, Shanghai 20033l)Liu Gang(Fudan University, Shanghai 200443)Zhong Shunshi(Shanghai University, Shanghai 201800) 《Journal of Electronics(China)》 1998年第1期84-89,共6页
A generalized spectral Green’s function formulation of N-layer substrate structure is given with three dimension sources, which is a set of closed form formulas. A full-wave analysis model for rectangular microstrip ... A generalized spectral Green’s function formulation of N-layer substrate structure is given with three dimension sources, which is a set of closed form formulas. A full-wave analysis model for rectangular microstrip antennas covered with N-dielectric layers has been established by using the above spectral Green’s function. The unknown surface current density on the niicrostrip patch for such structure is found as a solution of an integral equation. The input VSWR and radiation patterns of the antenna are also obtained. The numerical results have been verified by the experimental results. 展开更多
关键词 MICROSTRIP antenna n-layer dielectric COVER Full-wave ANALYSIS Spectral Green’s function
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