The early stages of hydrogenated nanocrystalline silicon （nc-Si：H） films deposited by plasma-enhanced chemical vapour deposition were characterized by atomic force microscopy. To increase the density of nanocrystal...The early stages of hydrogenated nanocrystalline silicon （nc-Si：H） films deposited by plasma-enhanced chemical vapour deposition were characterized by atomic force microscopy. To increase the density of nanocrystals in the nc-Si：H films, the films were annealed by rapid thermal annealing （RTA） at different temperatures and then analysed by Raman spectroscopy. It was found that the recrystallization process of the film was optimal at around 1000℃. The effects of different RTA conditions on charge storage were characterized by capacitance-voltage measurement. Experimental results show that nc-Si：H films obtained by RTA have good charge storage characteristics for nonvolatile memory.展开更多
The B- and P-doped hydrogenated nanocrystalline silicon films （nc-Si：H） are prepared by plasma-enhanced chemical vapour deposition （PECVD）. The microstructures of doped nc-Si＇H films are carefully and systematic...The B- and P-doped hydrogenated nanocrystalline silicon films （nc-Si：H） are prepared by plasma-enhanced chemical vapour deposition （PECVD）. The microstructures of doped nc-Si＇H films are carefully and systematically characterized by using high resolution electron microscopy （HREM）, Raman scattering, x-ray diffraction （XRD）, Auger electron spectroscopy （AES）, and resonant nucleus reaction （RNR）. The results show that as the doping concentration of PH3 increases, the average grain size （d） tends to decrease and the crystalline volume percentage （Xc） increases simultaneously. For the B-doped samples, as the doping concentration of B2H6 increases, no obvious change in the value of d is observed, but the value of Xc is found to decrease. This is especially apparent in the case of heavy B2H6 doped samples, where the films change from nanocrystalline to amorphous.展开更多
The enhanced optical absorption measured by Constant Photocurrent Method (CPM) of hydrogenated nanocrystalline silicon thin films is due mainly to bulk and/or surface light scattering effects. A new numerical method i...The enhanced optical absorption measured by Constant Photocurrent Method (CPM) of hydrogenated nanocrystalline silicon thin films is due mainly to bulk and/or surface light scattering effects. A new numerical method is presented to calculate both true optical absorption and scattering coefficient from CPM absorption spectra of nanotextured nano-crystalline silicon films. Bulk and surface light scattering contributions can be unified through the correlation obtained between the scattering coefficient and surface roughness obtained using our method.展开更多
该研究制备高电导、高透明的磷掺杂氢化纳米晶硅氧(nc-Si Ox:H)薄膜,应用于晶硅异质结(SHJ)太阳电池的窗口层以替代传统的氢化非晶硅(a-Si:H)薄膜。与以a-Si:H薄膜为窗口层的电池相比,短路电流密度提高0.5 m A/cm^(2),达到38.5 m A/cm^(...该研究制备高电导、高透明的磷掺杂氢化纳米晶硅氧(nc-Si Ox:H)薄膜,应用于晶硅异质结(SHJ)太阳电池的窗口层以替代传统的氢化非晶硅(a-Si:H)薄膜。与以a-Si:H薄膜为窗口层的电池相比,短路电流密度提高0.5 m A/cm^(2),达到38.5 m A/cm^(2),填充因子为82.7%,光电转换效率为23.5%。实验发现,在nc-Si Ox:H薄膜沉积前对本征非晶硅层表面进行处理,沉积1 nm纳米晶硅(nc-Si:H)种子层,可改善nc-Si Ox:H薄膜的晶化率,降低薄膜中的非晶相含量。与单层nc-Si Ox:H窗口层的电池相比,nc-Si:H/nc-Si Ox:H叠层结构提高电池填充因子,达到83.4%,光电转换效率增加了0.3%,达到23.8%。展开更多
Hydrogenated amorphous silicon-carbon (a-SiC:H) films were deposited by plasma enhanced chemical vapor deposition (PECVD) with a fixed methane to silane ratio ([CH4]/[SiH4]) of 1.2 and a wide range of hydrogen dilutio...Hydrogenated amorphous silicon-carbon (a-SiC:H) films were deposited by plasma enhanced chemical vapor deposition (PECVD) with a fixed methane to silane ratio ([CH4]/[SiH4]) of 1.2 and a wide range of hydrogen dilution (RH=[H2]/[SiH4 + CH4]) values of 12, 22, 33, 102 and 135. The impacts of RH on the structural and optical properties of the films were investigated by using UV-VIS transmission, Fourier transform infrared (FTIR) absorption, Raman scattering and photoluminescence (PL) measur- ements. The effects of high temperature annealing on the films were also probed. It is found that with increasing hydrogen dilution, the optical band gap increases, and the PL peak blueshifts from ～1.43 to 1.62 Ev. In annealed state, the room temperature PL peak for the low RH samples disappears, while the PL peak for the high RH samples appears at ～2.08 Ev, which is attributed to nanocrystalline Si particles confined by Si-C and Si-O bonds.展开更多
基金Project supported by the National Basic Research Program of China （973 Program） （Grant No 2006CB302706） and the National Natural Science Foundation of China （Grant Nos 90607022, 904010027 90207004, and 60506005）.
文摘The early stages of hydrogenated nanocrystalline silicon （nc-Si：H） films deposited by plasma-enhanced chemical vapour deposition were characterized by atomic force microscopy. To increase the density of nanocrystals in the nc-Si：H films, the films were annealed by rapid thermal annealing （RTA） at different temperatures and then analysed by Raman spectroscopy. It was found that the recrystallization process of the film was optimal at around 1000℃. The effects of different RTA conditions on charge storage were characterized by capacitance-voltage measurement. Experimental results show that nc-Si：H films obtained by RTA have good charge storage characteristics for nonvolatile memory.
基金Project supported by the National Natural Science Foundation of China （Grant No 10432050）.
文摘The B- and P-doped hydrogenated nanocrystalline silicon films （nc-Si：H） are prepared by plasma-enhanced chemical vapour deposition （PECVD）. The microstructures of doped nc-Si＇H films are carefully and systematically characterized by using high resolution electron microscopy （HREM）, Raman scattering, x-ray diffraction （XRD）, Auger electron spectroscopy （AES）, and resonant nucleus reaction （RNR）. The results show that as the doping concentration of PH3 increases, the average grain size （d） tends to decrease and the crystalline volume percentage （Xc） increases simultaneously. For the B-doped samples, as the doping concentration of B2H6 increases, no obvious change in the value of d is observed, but the value of Xc is found to decrease. This is especially apparent in the case of heavy B2H6 doped samples, where the films change from nanocrystalline to amorphous.
文摘The enhanced optical absorption measured by Constant Photocurrent Method (CPM) of hydrogenated nanocrystalline silicon thin films is due mainly to bulk and/or surface light scattering effects. A new numerical method is presented to calculate both true optical absorption and scattering coefficient from CPM absorption spectra of nanotextured nano-crystalline silicon films. Bulk and surface light scattering contributions can be unified through the correlation obtained between the scattering coefficient and surface roughness obtained using our method.
文摘Hydrogenated amorphous silicon-carbon (a-SiC:H) films were deposited by plasma enhanced chemical vapor deposition (PECVD) with a fixed methane to silane ratio ([CH4]/[SiH4]) of 1.2 and a wide range of hydrogen dilution (RH=[H2]/[SiH4 + CH4]) values of 12, 22, 33, 102 and 135. The impacts of RH on the structural and optical properties of the films were investigated by using UV-VIS transmission, Fourier transform infrared (FTIR) absorption, Raman scattering and photoluminescence (PL) measur- ements. The effects of high temperature annealing on the films were also probed. It is found that with increasing hydrogen dilution, the optical band gap increases, and the PL peak blueshifts from ～1.43 to 1.62 Ev. In annealed state, the room temperature PL peak for the low RH samples disappears, while the PL peak for the high RH samples appears at ～2.08 Ev, which is attributed to nanocrystalline Si particles confined by Si-C and Si-O bonds.
