Nano-structured SiO2 thin films were prepared on the surface of carbon steel for the first time by LPD. The compositions of the films were analyzed by XPS, and the surface morphology of the thin films were observed b...Nano-structured SiO2 thin films were prepared on the surface of carbon steel for the first time by LPD. The compositions of the films were analyzed by XPS, and the surface morphology of the thin films were observed by AFM. The thin films were constituted by compact particles of SiO2, and there was no Fe in the films. In the process of film forming, the SiO2 colloid particles were deposited or absorbed directly onto the surface of carbon steel substrates that were activated by acid solution containing inhibitor, and corrosion of the substrates was avoided. The nano-structured SiO2 thin films that were prepared had excellent protective efficiency to the carbon steel.展开更多
The initial field electron emission degradation behaviour of original nano-structured sp^2-bonded amorphous carbon films has been observed, which can be attributed to the increase of the work function of the film in t...The initial field electron emission degradation behaviour of original nano-structured sp^2-bonded amorphous carbon films has been observed, which can be attributed to the increase of the work function of the film in the field emission process analysed using a Fowler-Nordheim plot. The possible reason for the change of work function is suggested to be the desorption of hydrogen from the original hydrogen termination film surface due to field emission current-induced local heating. For the explanation of the emission degradation behaviour of the nano-structured sp2-bonded amorphous carbon film, a cluster model with a series of graphite （0001） basal surfaces has been presented, and the theoretical calculations have been performed to investigate work functions of graphite （0001） surfaces with different hydrogen atom and ion chemisorption sites by using first principles method based on density functional theory-local density approximation.展开更多
The pulsed laser deposition(PLD)technology was used to effectively create conductive nano and micro hafnium oxide with great purity and transparency for(HfO_(2))nanofilms.In many optoelectronics devices and their appl...The pulsed laser deposition(PLD)technology was used to effectively create conductive nano and micro hafnium oxide with great purity and transparency for(HfO_(2))nanofilms.In many optoelectronics devices and their applications,the presence of a high dielectric substance like a nano HfO2,between the metal contacts and the substrates was critical.We used the Pulsed Laser Deposition method to fabricate an Al/HfO_(2)/p-Si Schottky barrier diode where the nanostructured HfO2 films as an intermediate layer and varied substrate temperatures.The optical result reveals a high degree of transparency(93%).The optical bandgap of deposited HfO2 films was observed to vary between 4.9 and 5.3 eV,with a value of roughly 5.3 eV at the optimal preparation condition.The morphology of the surface shows a high homogeneous nano structure with the average values of the roughness about(0.3 nm).With regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-Vcharacterization.With regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-V characterization.The diode manufactured at 600℃,in particular,had a higher ideality factor value(n=3.2).展开更多
Cu_(2)ZnSnS_(4)薄膜因其元素地壳含量丰富、无毒且具有优异的光电性能,受到研究者的广泛关注。本文基于纳米墨水法用Cd部分取代Zn制成了Cu_(2)(Cd x Zn_(1-x))SnS_(4)(CCZTS)薄膜,研究退火时间和后退火温度对薄膜及其太阳电池性能的影...Cu_(2)ZnSnS_(4)薄膜因其元素地壳含量丰富、无毒且具有优异的光电性能,受到研究者的广泛关注。本文基于纳米墨水法用Cd部分取代Zn制成了Cu_(2)(Cd x Zn_(1-x))SnS_(4)(CCZTS)薄膜,研究退火时间和后退火温度对薄膜及其太阳电池性能的影响。研究结果表明,所制备的薄膜为CCZTS相,无其他杂相,薄膜表面平整且致密,结晶性较好。随着退火时间增加,薄膜的晶粒尺寸有所增大,薄膜太阳电池的pn结质量得到提升,其性能也随之提高。通过对薄膜太阳电池进行后退火处理,分析了吸收层的元素扩散对电池性能的影响,在Cd元素形成梯度分布时,电池性能有所提高。随着后退火温度的增加,其电池性能和pn结质量呈现先提高后下降的趋势。经后退火300℃处理后,电池转换效率最佳,为3.13%。展开更多
文摘Nano-structured SiO2 thin films were prepared on the surface of carbon steel for the first time by LPD. The compositions of the films were analyzed by XPS, and the surface morphology of the thin films were observed by AFM. The thin films were constituted by compact particles of SiO2, and there was no Fe in the films. In the process of film forming, the SiO2 colloid particles were deposited or absorbed directly onto the surface of carbon steel substrates that were activated by acid solution containing inhibitor, and corrosion of the substrates was avoided. The nano-structured SiO2 thin films that were prepared had excellent protective efficiency to the carbon steel.
文摘The initial field electron emission degradation behaviour of original nano-structured sp^2-bonded amorphous carbon films has been observed, which can be attributed to the increase of the work function of the film in the field emission process analysed using a Fowler-Nordheim plot. The possible reason for the change of work function is suggested to be the desorption of hydrogen from the original hydrogen termination film surface due to field emission current-induced local heating. For the explanation of the emission degradation behaviour of the nano-structured sp2-bonded amorphous carbon film, a cluster model with a series of graphite （0001） basal surfaces has been presented, and the theoretical calculations have been performed to investigate work functions of graphite （0001） surfaces with different hydrogen atom and ion chemisorption sites by using first principles method based on density functional theory-local density approximation.
文摘The pulsed laser deposition(PLD)technology was used to effectively create conductive nano and micro hafnium oxide with great purity and transparency for(HfO_(2))nanofilms.In many optoelectronics devices and their applications,the presence of a high dielectric substance like a nano HfO2,between the metal contacts and the substrates was critical.We used the Pulsed Laser Deposition method to fabricate an Al/HfO_(2)/p-Si Schottky barrier diode where the nanostructured HfO2 films as an intermediate layer and varied substrate temperatures.The optical result reveals a high degree of transparency(93%).The optical bandgap of deposited HfO2 films was observed to vary between 4.9 and 5.3 eV,with a value of roughly 5.3 eV at the optimal preparation condition.The morphology of the surface shows a high homogeneous nano structure with the average values of the roughness about(0.3 nm).With regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-Vcharacterization.With regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-V characterization.The diode manufactured at 600℃,in particular,had a higher ideality factor value(n=3.2).
文摘Cu_(2)ZnSnS_(4)薄膜因其元素地壳含量丰富、无毒且具有优异的光电性能,受到研究者的广泛关注。本文基于纳米墨水法用Cd部分取代Zn制成了Cu_(2)(Cd x Zn_(1-x))SnS_(4)(CCZTS)薄膜,研究退火时间和后退火温度对薄膜及其太阳电池性能的影响。研究结果表明,所制备的薄膜为CCZTS相,无其他杂相,薄膜表面平整且致密,结晶性较好。随着退火时间增加,薄膜的晶粒尺寸有所增大,薄膜太阳电池的pn结质量得到提升,其性能也随之提高。通过对薄膜太阳电池进行后退火处理,分析了吸收层的元素扩散对电池性能的影响,在Cd元素形成梯度分布时,电池性能有所提高。随着后退火温度的增加,其电池性能和pn结质量呈现先提高后下降的趋势。经后退火300℃处理后,电池转换效率最佳,为3.13%。
