A kind of filed-emission array pressure sensor is designed based on the quantum tunnel effect. The nano-crystalline silicon film is prepared by chemical vapor deposition (CVD) method, with the grain dimension and thic...A kind of filed-emission array pressure sensor is designed based on the quantum tunnel effect. The nano-crystalline silicon film is prepared by chemical vapor deposition (CVD) method, with the grain dimension and thickness of the film 3—9 nm and 30—40 nm, respectively. The nano-crystal- line silicon film is introduced into the cathode cones of the sensor, functioning as the essential emission part. The silicon nano phase is analyzed by HREM and TED, the microstructure of the single emitter and emitters array is inspected by SEM, and the field emission characteristics of the device are studied by an HP4145B transistor tester. The experimental results show that the measured current density emitted from the effective area of the sensor can reach 53.5 A/m2 when the exterior electric field is 5.6×105 V/m.展开更多
报道了在采用 L PCVD法制备的富硅 Si Nx 膜中发现的部分晶化的硅镶嵌微结构 .视生长条件和工艺不同 ,该结构的尺度范围从数十到几百纳米不等 .利用不同条件下生长的 Si Nx 膜的应力测试结果和透射电镜观测结果 ,分析了富硅型 Si Nx 膜...报道了在采用 L PCVD法制备的富硅 Si Nx 膜中发现的部分晶化的硅镶嵌微结构 .视生长条件和工艺不同 ,该结构的尺度范围从数十到几百纳米不等 .利用不同条件下生长的 Si Nx 膜的应力测试结果和透射电镜观测结果 ,分析了富硅型 Si Nx 膜的微结构的成因及其与膜内应力之间的相互影响 ,对富硅型 Si Nx 膜的 L PCVD生长工艺进行优化 ,大大降低了膜的张应力 ,无支撑成膜面积可达 4 0 m m× 4 0 mm.通过这一研究结果 ,实现了 L PCVD可控制生长确定张应力的 Si Nx展开更多
文摘A kind of filed-emission array pressure sensor is designed based on the quantum tunnel effect. The nano-crystalline silicon film is prepared by chemical vapor deposition (CVD) method, with the grain dimension and thickness of the film 3—9 nm and 30—40 nm, respectively. The nano-crystal- line silicon film is introduced into the cathode cones of the sensor, functioning as the essential emission part. The silicon nano phase is analyzed by HREM and TED, the microstructure of the single emitter and emitters array is inspected by SEM, and the field emission characteristics of the device are studied by an HP4145B transistor tester. The experimental results show that the measured current density emitted from the effective area of the sensor can reach 53.5 A/m2 when the exterior electric field is 5.6×105 V/m.
文摘报道了在采用 L PCVD法制备的富硅 Si Nx 膜中发现的部分晶化的硅镶嵌微结构 .视生长条件和工艺不同 ,该结构的尺度范围从数十到几百纳米不等 .利用不同条件下生长的 Si Nx 膜的应力测试结果和透射电镜观测结果 ,分析了富硅型 Si Nx 膜的微结构的成因及其与膜内应力之间的相互影响 ,对富硅型 Si Nx 膜的 L PCVD生长工艺进行优化 ,大大降低了膜的张应力 ,无支撑成膜面积可达 4 0 m m× 4 0 mm.通过这一研究结果 ,实现了 L PCVD可控制生长确定张应力的 Si Nx
