Thin cuprous oxide films have been prepared by chemical vapor deposition(pulsed spray evaporation-chemical vapor deposition)method without post-treatment.The synthesis of cuprous oxide was produced by applying a water...Thin cuprous oxide films have been prepared by chemical vapor deposition(pulsed spray evaporation-chemical vapor deposition)method without post-treatment.The synthesis of cuprous oxide was produced by applying a water strategy effect.Then,the effect of water on the morphology,topology,structure,optical properties and surface composition of the obtained films has been comprehensively investigated.The results reveal that a pure phase of Cu2O was obtained.The introduction of a small quantity of water in the liquid feedstock lowers the band gap energy from 2.16 eV to 2.04 eV.This finding was mainly related to the decrease of crystallite size due to the effect of water.The topology analyses,by using atomic force microscope,also revealed that surface roughness decreases with water addition,namely more uniform covered surface.Moreover,theoretical calculations based on density functional theory method were performed to understand the adsorption and reaction behaviors of water and ethanol on the Cu2O thin film surface.Formation mechanism of the Cu2O thin film was also suggested and discussed.展开更多
Cuprous oxides with different morphologies were formed on F-doped tin oxide （FTO） covered glass substrates by potentiostatic deposition of cupric acetate. The effects of CTAB and Cl- on the crystal morphologies of c...Cuprous oxides with different morphologies were formed on F-doped tin oxide （FTO） covered glass substrates by potentiostatic deposition of cupric acetate. The effects of CTAB and Cl- on the crystal morphologies of cuprous oxide were studied. Different crystal morphologies of cuprous oxides were obtained by the change of the concentrations of CTAB and Cl. The flowerlike and cubic morphologies of Cu2O crystals were obtained when using higher concentration of CTAB and KCl, respectively. Photoelectrochemical properties of the Cu2O thin films prepared in the system were also studied.展开更多
Cu2O thin films with （111） preferred orientation have been grown on glass and Cu substrates by rapid thermal oxidation of Cu at 500℃ for 45s. The optical band gap energy was determined by spectral data of transmitt...Cu2O thin films with （111） preferred orientation have been grown on glass and Cu substrates by rapid thermal oxidation of Cu at 500℃ for 45s. The optical band gap energy was determined by spectral data of transmittance and absorbance to be 2.04eV. The electrical conductivity of grown films was measured around （1：1 × 10^-5Ω^-1cm^-1） at 300K. Thermoelectric power measurements of the film were carried out. Furthermore, the properties of these films are compared with properties of Cu2O obtained by other methods.展开更多
Cuprous oxide(Cu2O)is an attractive material for photoelectrochemical(PEC)hydrogen production or photovoltaic application,because of its appropriate band gap,low material cost and non-toxic.In this paper,Cu2O films we...Cuprous oxide(Cu2O)is an attractive material for photoelectrochemical(PEC)hydrogen production or photovoltaic application,because of its appropriate band gap,low material cost and non-toxic.In this paper,Cu2O films were obtained by comproportionation in acid cupric sulfate solutions with varying concentrations of potassium nitrate.Photoelectrochemical and electrochemical experiments,such as zero-bias photocurrent responses,voltammograms,and Mott-Schottky measurements,show that the Cu2O films grown in low(≤0.75 mol dm^–3)and high(≥1.00 mol dm^–3)nitrate ion concentrations presented n-type and p-type conductivity,respectively.Open circuit potential and polarization behavior were monitored to investigate the mechanism of modulating conductivity type.Nitrate ions consume protons in the plating solution during comproportionation with different concentrations of nitrate ions creating different pH at the Cu2O/solution interface.This gradient leads to the transformation of Cu2Ofilms conductivity changing from n-type to p-type with increasing the concentration of nitrate ions in the plating solution.This method could be used to fabricate homojunction electrode on metal substrate for PEC hydrogen production or photoelectric application.展开更多
An immobilized Cu2O/g-C3N4 heterojunction film was successfully made on an FTO substrate by electrophoretic deposition of g-C3N4 on a Cu2O thin film.The photoelectrochemical（PEC） performance for water splitting by t...An immobilized Cu2O/g-C3N4 heterojunction film was successfully made on an FTO substrate by electrophoretic deposition of g-C3N4 on a Cu2O thin film.The photoelectrochemical（PEC） performance for water splitting by the Cu2O/g-C3N4 film was better than pure g-C3N4 and pure Cu2O film.Under-0.4 V external bias and visible light irradiation,the photocurrent density and PEC hydrogen evolution efficiency of the optimized Cu2O/g-C3N4 film was-1.38 mA/cm^2 and 0.48 mL h^-1 cm^-2,respectively.The enhanced PEC performance of Cu2O/g-C3N4 was attributed to the synergistic effect of light coupling and a matching energy band structure between g-C3N4 and Cu2O as well as the external bias.展开更多
Cuprous oxide （Cu2O） thin films have been grown by electrodeposition technique onto ITO-coated glass substrates from aqueous copper acetate solutions with addition of sodium thiosulfate at 60 ℃ The effects of sodiu...Cuprous oxide （Cu2O） thin films have been grown by electrodeposition technique onto ITO-coated glass substrates from aqueous copper acetate solutions with addition of sodium thiosulfate at 60 ℃ The effects of sodium thiosulfate on the electrochemical deposition of Cu2O films were investigated by cyclic voltammetry and chronoamperometry techniques. Deposited films were obtained at - 0.58 V vs. SCE and characterized by X-ray diffraction （XRD）, Fourier transform infrared spectroscopy （FrIR）, scanning electron microscopy （SEM）, and optical, photoelectrochemical and electrical measurements. X-ray diffraction results indicated that the synthesized Cu2O films had a pure cubic phase with a marked preferential orientation peak along （200） plane and with lattice constants a = b = c = 0.425 rim. FFIR results confirmed the presence of Cu2O films at peak 634 cm 1. SEM images of Cu2O films showed a better compactness and spherical-shaped composition. Optical properties of Cu2O films reveal a high optical transmission （〉80%） and high absorption coefficient （α 〉 104 cm- 1 ） in visiblelight region. The optical energy band gap was found to be 2.103 eV. Photoelectrochemical measurements indicated that Cu2O films had n-type semiconductor conduction, which confirmed by Hall Effect measurements. Electrical properties of Cu2O films showed a low electrical resistivity of 61.30 Ω. cm-1, carrier concentration of-4.94×1015cm -3andmobility of20.61cm2.V 1,s-l.Theobtained Cu2O thin films with suitable properties are promising semiconductor material for fabrication of photovoltaic solar cells,展开更多
基金supported by the Ministry of Science and Technology of China(No.2017YFA0402800)the National Natural Science and Technology of China(No.91541102 and No.51476168)+2 种基金the support by Chinese Academy of Sciences for Senior International Scientists within President’s International Fellowship Initiative(PIFI)programthe financial support during his Ph.D.research stay at Bielefeld UniversityThe Moroccan institute of IRESEN is acknowledged for the financial support(Innowind13 Nanolubricant)
文摘Thin cuprous oxide films have been prepared by chemical vapor deposition(pulsed spray evaporation-chemical vapor deposition)method without post-treatment.The synthesis of cuprous oxide was produced by applying a water strategy effect.Then,the effect of water on the morphology,topology,structure,optical properties and surface composition of the obtained films has been comprehensively investigated.The results reveal that a pure phase of Cu2O was obtained.The introduction of a small quantity of water in the liquid feedstock lowers the band gap energy from 2.16 eV to 2.04 eV.This finding was mainly related to the decrease of crystallite size due to the effect of water.The topology analyses,by using atomic force microscope,also revealed that surface roughness decreases with water addition,namely more uniform covered surface.Moreover,theoretical calculations based on density functional theory method were performed to understand the adsorption and reaction behaviors of water and ethanol on the Cu2O thin film surface.Formation mechanism of the Cu2O thin film was also suggested and discussed.
基金Funded by the Scientific and Technological Developing Scheme of Jilin Province (20100550)
文摘Cuprous oxides with different morphologies were formed on F-doped tin oxide （FTO） covered glass substrates by potentiostatic deposition of cupric acetate. The effects of CTAB and Cl- on the crystal morphologies of cuprous oxide were studied. Different crystal morphologies of cuprous oxides were obtained by the change of the concentrations of CTAB and Cl. The flowerlike and cubic morphologies of Cu2O crystals were obtained when using higher concentration of CTAB and KCl, respectively. Photoelectrochemical properties of the Cu2O thin films prepared in the system were also studied.
文摘Cu2O thin films with （111） preferred orientation have been grown on glass and Cu substrates by rapid thermal oxidation of Cu at 500℃ for 45s. The optical band gap energy was determined by spectral data of transmittance and absorbance to be 2.04eV. The electrical conductivity of grown films was measured around （1：1 × 10^-5Ω^-1cm^-1） at 300K. Thermoelectric power measurements of the film were carried out. Furthermore, the properties of these films are compared with properties of Cu2O obtained by other methods.
基金financially supported by the National Natural Science Foundation of China (No. 51302216 and 21375102)the Excellent Young Academic Backbone Program of the Northwest University+1 种基金the Open Fund of the State Key Laboratory of Multiphase Flow in Power Engineering of Chinathe Scientific Research Program funded by Shaanxi Provincial Education Department (No. 17JS121)
文摘Cuprous oxide(Cu2O)is an attractive material for photoelectrochemical(PEC)hydrogen production or photovoltaic application,because of its appropriate band gap,low material cost and non-toxic.In this paper,Cu2O films were obtained by comproportionation in acid cupric sulfate solutions with varying concentrations of potassium nitrate.Photoelectrochemical and electrochemical experiments,such as zero-bias photocurrent responses,voltammograms,and Mott-Schottky measurements,show that the Cu2O films grown in low(≤0.75 mol dm^–3)and high(≥1.00 mol dm^–3)nitrate ion concentrations presented n-type and p-type conductivity,respectively.Open circuit potential and polarization behavior were monitored to investigate the mechanism of modulating conductivity type.Nitrate ions consume protons in the plating solution during comproportionation with different concentrations of nitrate ions creating different pH at the Cu2O/solution interface.This gradient leads to the transformation of Cu2Ofilms conductivity changing from n-type to p-type with increasing the concentration of nitrate ions in the plating solution.This method could be used to fabricate homojunction electrode on metal substrate for PEC hydrogen production or photoelectric application.
基金supported by the National Natural Science Foundation of China (21173088)the Science and Technology Project of Guangdong Province (2014A030312007, 2015A050502012, 2016A010104013)+1 种基金the China Postdoctoral Science Foundation (2016M592493)the Open Research Fund of Hunan Key Laboratory of Applied Environmental Photocatalysis (CCSU-XT-06),Changsha University~~
文摘An immobilized Cu2O/g-C3N4 heterojunction film was successfully made on an FTO substrate by electrophoretic deposition of g-C3N4 on a Cu2O thin film.The photoelectrochemical（PEC） performance for water splitting by the Cu2O/g-C3N4 film was better than pure g-C3N4 and pure Cu2O film.Under-0.4 V external bias and visible light irradiation,the photocurrent density and PEC hydrogen evolution efficiency of the optimized Cu2O/g-C3N4 film was-1.38 mA/cm^2 and 0.48 mL h^-1 cm^-2,respectively.The enhanced PEC performance of Cu2O/g-C3N4 was attributed to the synergistic effect of light coupling and a matching energy band structure between g-C3N4 and Cu2O as well as the external bias.
基金Supported by the Algerian Ministry of Higher Education and Scientific Research(CNEPRU project number:J0101520090018)
文摘Cuprous oxide （Cu2O） thin films have been grown by electrodeposition technique onto ITO-coated glass substrates from aqueous copper acetate solutions with addition of sodium thiosulfate at 60 ℃ The effects of sodium thiosulfate on the electrochemical deposition of Cu2O films were investigated by cyclic voltammetry and chronoamperometry techniques. Deposited films were obtained at - 0.58 V vs. SCE and characterized by X-ray diffraction （XRD）, Fourier transform infrared spectroscopy （FrIR）, scanning electron microscopy （SEM）, and optical, photoelectrochemical and electrical measurements. X-ray diffraction results indicated that the synthesized Cu2O films had a pure cubic phase with a marked preferential orientation peak along （200） plane and with lattice constants a = b = c = 0.425 rim. FFIR results confirmed the presence of Cu2O films at peak 634 cm 1. SEM images of Cu2O films showed a better compactness and spherical-shaped composition. Optical properties of Cu2O films reveal a high optical transmission （〉80%） and high absorption coefficient （α 〉 104 cm- 1 ） in visiblelight region. The optical energy band gap was found to be 2.103 eV. Photoelectrochemical measurements indicated that Cu2O films had n-type semiconductor conduction, which confirmed by Hall Effect measurements. Electrical properties of Cu2O films showed a low electrical resistivity of 61.30 Ω. cm-1, carrier concentration of-4.94×1015cm -3andmobility of20.61cm2.V 1,s-l.Theobtained Cu2O thin films with suitable properties are promising semiconductor material for fabrication of photovoltaic solar cells,
