压电AlN MEMS的新进展(续)

Si基微电子机械系统(MEMS)经过三十余年的发展已进入智能微系统的发展阶段,已成为当今MEMS技术创新发展的主流。当今半导体材料技术的科研已进入超宽禁带半导体的探索开发阶段,超宽禁带半导体AlN不但在功率电子学有较好的前景,而且AlN薄膜具有较好的压电性能,与CMOS工艺相兼容,压电AlN MEMS首先在手机应用的射频谐振器、滤波器方面取得突破,实现量产,近年来压电AlN MEMS已成为MEMS技术创新发展的热点。介绍了压电AlN MEMS在掺杂薄膜材料制备、新器件结构设计、新工艺、可靠性和应用创新等方面的最新进展,包含掺钪AlN薄膜研制、AlN薄膜多层结构、AlScN薄膜性能、AlN薄膜制备;体声波(BAW)谐振器与固体安装谐振器(SMR)、薄膜体声波谐振器(FBAR)和薄膜压电MEMS、轮廓模式谐振器(即兰姆波谐振器)、混合谐振器、AlN压电微机械超声换能器(PMUT)等结构创新;有利于CMOS集成,批量高可靠,压电AlN薄膜的晶圆量产,AlScN器件工艺优化;AlN MEMS热疲劳和抗辐照;谐振器与滤波器、能量收集器、物质和生物传感与检测、指纹传感器、图像器和麦克风、通信、微镜传感、柔性传感等方面研究成果。分析和评价了压电AlN MEMS关键技术进步和发展态势。

压电AlN MEMS的新进展

Si基微电子机械系统(MEMS)经过三十余年的发展已进入智能微系统的发展阶段,已成为当今MEMS技术创新发展的主流。当今半导体材料技术的科研已进入超宽禁带半导体的探索开发阶段,超宽禁带半导体AlN不但在功率电子学有较好的前景,而且AlN薄膜具有较好的压电性能,与CMOS工艺相兼容,压电AlN MEMS首先在手机应用的射频谐振器、滤波器方面取得突破,实现量产,近年来压电AlN MEMS已成为MEMS技术创新发展的热点。介绍了压电AlN MEMS在掺杂薄膜材料制备、新器件结构设计、新工艺、可靠性和应用创新等方面的最新进展,包含掺钪AlN薄膜研制、AlN薄膜多层结构、AlScN薄膜性能、AlN薄膜制备;体声波(BAW)谐振器与固体安装谐振器(SMR)、薄膜体声波谐振器(FBAR)和薄膜压电MEMS、轮廓模式谐振器(即兰姆波谐振器)、混合谐振器、AlN压电微机械超声换能器(PMUT)等结构创新;有利于CMOS集成,批量高可靠,压电AlN薄膜的晶圆量产,AlScN器件工艺优化;AlN MEMS热疲劳和抗辐照;谐振器与滤波器、能量收集器、物质和生物传感与检测、指纹传感器、图像器和麦克风、通信、微镜传感、柔性传感等方面研究成果。分析和评价了压电AlN MEMS关键技术进步和发展态势。

Design of a test structure based on chevron-shaped thermal actuator for in-situ measurement of the fracture strength of MEMS thin films

A novel test structure to characterize the fracture strength of MEMS(Micro-electro-Mechanical Systems)thin films is presented.The test structure is comprised of a micro fabricated chevron-shaped thermal actuator and test specimen.The test structure is capable of producing large displacement and stresswhile keeping a relatively low temperature gradient across the test specimen.A voltage is applied across the beams of the chevron-shaped actuator,producing thermal expansion force to fracture the test specimen.Actuator deflection is computed based on elastic analysis of structures.To verify the test structure,simulations have been implemented using COMSOL Multiphysics.A 620μmlong,410μm wide,10μm thick test structure produced stress of 7.1 GPawhile the applied voltage is 5 V.The results indicate that the test structure is suitable for in-situ measurement of the fracture strength of MEMS thin films.

A Generalized Reynolds' Equation For Squeeze-Film Air Damping in MEMS

A differential equation that is generally effective for squeeze film air damping of perforated plate and non perforated plate as well as in MEMS devices is developed.For perforated plate,the thickness and the dimensions of the plate are not limited.With boundary conditions,pressure distribution and the damping force on the plate can be found by solving the differential equation.Analytical expressions for damping pressure and damping force of a long strip holeplate are presented with a finite thickness and a finite width.To the extreme conditions of very thin plate and very thin hole,the results are reduced to the corresponding results of the conventional Reynolds' equation.Thus, the effectiveness of the generalized differential equation is justified.Therefore,the generalized Reynolds' equation will be a useful tool of design for damping structures in MEMS.

SIMPLIFIED SCALING TRANSFORMATION FOR THE NUMERICAL SIMULATION OF MEMS DEVICES WITH THIN FILM STRUCTURES

Thin film is a widely used structure in the present microelectromechanical systems （MEMS） and plays a vital role in many functional devices. However, the great size difference between the film＇s thickness and its planar dimensions makes it difficult to study the thin film performance numerically. In this work, a scaling transformation was presented to make the different dimensional sizes equivalent, and thereby, to improve the grid quality considerably. Two numerical experiments were studied to validate the present scaling transformation method. The numerical results indicated that the largest grid size difference can be decreased to one to two orders of magnitude by using the present scaling transformation, and the memory required by the numerical simulation, i.e., the total grid number, could be reduced by about two to three orders of magnitude, while the numerical accuracies with and without this scaling transformation were nearly the same.

Capacitive Microwave MEMS Switch

A novel capacitive microwave MEMS switch with a silicon/metal/dielectric as a membrane is fabricated successfully by bonding and etching-stop process. Its principal, design, and fabricating process are described in detail. A patterned dielectric layer, Ta2O5, with dielectric constant of 24 is reached. Experiment results show this novel structure,where the switch＇s dielectric layer is not prepared on the transmission line, features very low insertion loss. The insertion loss is 0.06dB at 2GHz and lower than 0.5dB in the wider range from De up to 20GHz,especially when the transmission line metal is only 0. 5μm thick.

Effects of Squeeze-film Air Damping on Properties of MEMS Inertial Switch in Fuse

The squeeze-film air damping exists in a lot of micro-electronic-mechanical system (MEMS) devices unavoidably. The effects of air damping in traditional inertial switch with spring-mass system can be ignored for its large volume and mass. But, many properties of MEMS switch, such as sensitivity, resolution and contact time, are affected by the air damping caused from the squeezed air film between two parallel plates moving relatively. Based on the conservation laws for mass and flux and the nonlinear Reynolds equation, the coefficient of squeeze-film damping was derived. The dynamic responses of the inertial switch with and without squeeze-film damping were simulated by using software ANSYS. The simulated results show that the sensitivity and contact time of the switch descend by about 5% and 15%, respectively, when the effects of squeeze-film damping are considered.

毫米波RF MEMS开关的研制

RF MEMS开关加工工序多,过程复杂,加工难度较大,影响开关加工质量的因素众多。从工艺流程入手,对加工过程中的牺牲层平坦化、牺牲层释放、薄膜微桥厚度及均匀性控制、薄膜微桥应力处理等关键技术和重要影响因素进行了分析。研制的20-40 GHz RF MEMS开关,其插入损耗≤0.4 d B,回波损耗≤-20 d B,隔离度≥20 d B,驱动电压50-100 V,热切换寿命≥106次。

LCP基RF MEMS开关的工艺研究

在柔性LCP基板上制备RF MEMS开关,加工难度较大,影响开关质量的因素较多。主要研究影响LCP基RF MEMS开关加工质量的主要因素,寻找工艺过程控制解决方案。通过对关键工序的试验,对加工过程中的基板清洗、LCP基板覆铜面镀涂及整平、LCP基板无铜面溅射金属膜层、LCP基板平整度保持、二氧化硅膜层生长及图形化、牺牲层加工、薄膜微桥加工、牺牲层释放等工序进行了参数优化。研制的LCP基RF MEMS开关样件频率≤20 GHz、插入损耗≤0.5 d B,回波损耗≤-20 d B,隔离度≥20 d B,驱动电压30~50 V。该加工方法对柔性基板上可动结构的制造具有一定的借鉴价值。

Polyimide Humidity Integrated Sensor Fabricated Using the MEMS Process

This paper reports on the fabrication and sensing characteristics of Polyimide-based humidity sensor,based on that,a new integrated circuit of humidity measurement has been designed.It is a novel capacitive-type systems on a chip structure using the MEMS process.The results show that the new sensor presents sensing characteristics over a humidity range from 10%～70% RH at 20℃,and the sensor is able to fabricated together with ICs technology.The result shows that integration of humidity sensor with integrated circuit of humidity measurement is considerably easier when they are built in sensing groove.The appeal of a new structure like this brings the possibility of applications that would require the flexibility of simple screen printing.

Preparation and Characterization of DLC Films by Twinned ECR Microwave Plasma Enhanced CVD for Microelectromechanical Systems (MEMS) Applications

Diamond-like carbon (DLC) films have recently been pursued as the protection of MEMS against their friction and wear.Plasma enhanced chemical vapor deposition (PECVD) technique is very attractive to prepare DLC coating for MEMS.This paper describes the preparation of DLC films using twinned electron cyclotron resonance (ECR) microwave PECVD process.Raman spectra confirmed the DLC characteristics of the films.Fourier-transform infrared (FT-IR)characterization indicates the carbon is bonded in the form sp~3 and sp~2 with hydrogen participating in bonding.The surface roughness of the films is as low as approximately (0.093)nm measured with an atomic force microscope.A CERT microtribometer system is employed to obtain information about the scratch resistance,friction properties,and sliding wear resistance of the films.The results show the deposited DLC films have low friction and good scratch/wear resistance properties.

高温MEMS薄膜热流传感器研究进展

对可用于高温环境的MEMS薄膜热流传感器(TFHFS)的测量原理、结构设计、材料成分以及制造技术进行了简单阐述,分别介绍了半无限几何、热阻式、热电堆和横向热电效应型TFHFS的结构特点和应用优势。归纳讨论了国内外科研团队研制的各种TFHFS的量热法、传感方式、结构、材料以及测量模式,按照热敏材料分为金属和合金型、陶瓷和新型聚合物衍生陶瓷型两类,重点关注TFHFS的高温稳定性、响应时间、灵敏度等性能。最后,总结了目前TFHFS面临的技术难题和发展趋势,可为应用于更严酷环境的高温薄膜热流测量技术提供参考。

基于MEMS声敏结构的光纤声波传感器

基于微机电系统(Micro Electro Mechanical System,MEMS)工艺加工声波敏感结构,将声波敏感结构与光纤端面构成非本征型光纤法布里-珀罗干涉仪(Extrinsic Fabry-Perot Interferometer,EFPI)感知声波。研究了不同厚度和不同增敏环数的声压敏感薄膜结构对声波探测性能的差异,对比了信噪比测试结果。实验结果表明,针对400 nm和1000 nm厚度的声敏薄膜,在相同的测试条件下,前者的声敏结构位移更大、频率响应的信噪比更高。在相同薄膜厚度条件下,具有增敏结构的MEMS薄膜可以释放薄膜的初始应力,降低薄膜的刚性,相比无增敏结构的MEMS薄膜具有更高的灵敏度。

自加热非晶锗热电阻MEMS流速传感器的制造与测试

为扩大流速传感器的测量范围并降低功耗,制造并测试了一种基于自加热非晶锗薄膜热电阻的MEMS流速传感器,它是由嵌入氮化硅薄膜的四个非晶锗热敏电阻和一对环境测温补偿电阻组成。四个非晶锗热电阻同时作为自加热热源和测温元件,相互连接以形成惠斯通电桥。给出了MEMS工艺流程,微加工制造了尺寸为8.9 mm×5.6 mm×0.4 mm的流速传感器芯片。搭建了低流速和高流速气流通道实验装置,对传感器的惠斯通电桥施加50μA的恒定电流(CCA),实现了0~50 m/s范围内的流速测量。结果表明,传感器在低流速(0~2 m/s)时的灵敏度约为81.6 mV/(m/s),在高流速(2~50 m/s)时的灵敏度约为51.9 mV/(m/s),最大功耗仅约为1.03 mW。

基于MEMS芯片的磁性材料TEM表征技术

传统透射电子显微镜(TEM)以电磁场为透镜,通常情况下磁性材料不能直接在TEM下进行观测,一般使用以碳为支撑膜的双联铜网作为样品载网,但仍然有一定的破损概率。设计并实现了一种新型的基于微电子机械系统(MEMS)芯片的磁性材料TEM表征技术。该技术通过磁性TEM芯片和配套的样品杆,在TEM内形成一个密闭空间。将磁性样品上载到磁性TEM芯片上,从而实现在TEM下对磁性样品的安全观测。该芯片的核心结构是可以透射电子束的超薄氮化硅窗口,该窗口采用低压化学气相沉积(LPCVD)法制备,具有极高的机械强度,最高可以承受接近400 kPa的气压差。实验结果表明,利用该TEM表征技术可以在TEM下成功观测铁包硅和NiO两种磁性材料,分辨率可以达到原子级。

Design and fabrication of a MEMS Lamb wave device based on ZnO thin film

This paper presents the design and fabrication of a Lamb wave device based on ZnO piezoelectric film. The Lamb waves were respectively launched and received by both Al interdigital transducers.In order to reduce the stress of the thin membrane,the ZnO/Al/LTO/Si;N;/Si multilayered thin plate was designed and fabricated.A novel method to obtain the piezoelectric constant of the ZnO film was used.The experimental results for characterizing the wave propagation modes and their frequencies of the Lamb wave device indicated that the measured center frequency of antisymmetric A;and symmetric S;modes Lamb wave agree with the theoretical predictions.The mass sensitivity of the MEMS Lamb wave device was also characterized for gravimetric sensing application.

MEMS集成应用的纳米结构PZT厚膜形成工艺研究

提出了制备PZT厚膜的一种新的旋转涂覆方法。采用0-3复合法将PZT溶胶与PZT纳米粉混合形成浆料，并与PZT溶胶交替涂覆在Pt／Ti／SiO2／Si衬底上，使PZT厚度达2μm，并且使PZT表面质量得到了改善。利用XRD和SEM对PzT厚膜的组织和结构进行了表征。得到的薄膜无裂纹，结晶和表面平整度良好，可用于MEMS中微型传感器和微型驱动器的制作。

SU-8胶及其在MEMS中的应用

SU 8胶是一种负性、环氧树脂型、近紫外线光刻胶。它适于制超厚、高深宽比的MEMS微结构。SU 8胶在近紫外光范围内光吸收度低 ,故整个光刻胶层所获得的曝光量均匀一致 ,可得到具有垂直侧壁和高深宽比的厚膜图形 ;它还具有良好的力学性能、抗化学腐蚀性和热稳定性 ;SU 8胶不导电 ,在电镀时可以直接作为绝缘体使用。由于它具有较多优点 ,被逐渐应用于MEMS的多个研究领域。本文主要分析SU 8胶的特点 ,介绍其在MEMS的一些主要应用 ,总结了我们研究的经验 ,以及面临的一些问题 。

MEMS器件真空封装用非蒸散型吸气剂薄膜研究概述

MEMS器件是机械电子系统未来的发展趋势。许多MEMS器件需要进行真空封装,从最大程度地减少残余气体,且真空封装水平的高低决定了器件的性能优劣甚至决定器件能否正常工作。常规的MEMS器件封装是在真空腔内放置块体吸气剂,占空间且容易产生微小颗粒污染。在器件的真空腔室内镀上吸气剂薄膜,吸气剂薄膜在器件高温键合的同时被激活,就可在后期维持真空腔内的真空度。非蒸散型吸气剂薄膜激活后在室温下即具有优异的吸气性能,应用于MEMS器件真空封装可以提高器件的寿命和可靠性。目前,提高非蒸散型吸气剂薄膜的吸气性能,降低其激活温度是国内外研究的焦点。本文简要介绍了非蒸散型吸气剂薄膜的吸气原理,从膜系材料和制备技术两方面分析了国内外研究现状。在膜材料方面,目前采用ⅣB族+ⅤB族组合的三元合金作为非蒸散型吸气剂薄膜的膜系材料。另外,在材料中掺入Fe、稀土元素等进行薄膜结构的修饰也是较常用的手段。值得指出的是,TiZrV合金薄膜是兼具较好的吸气性能和最低激活温度的非蒸散型吸气剂(NEG)薄膜。在制备技术方面,MEMS器件用非蒸散型吸气剂薄膜一般采用磁控溅射镀膜,磁控溅射镀膜工艺的关键是制备出柱状的纳米晶结构,该结构存在大量的晶界,可促进原子的扩散,降低激活温度。磁控溅射镀膜工艺的研究围绕靶材选择、基片温度、溅射电压、溅射气氛等。探索综合性能更优的新型材料体系和增大薄膜的比表面积仍然是目前非蒸散型吸气剂薄膜研究的关键。本文最后对非蒸散型吸气剂薄膜的研究趋势进行了展望,指出加入调节层的双层膜的激活性能和吸气性能优于单层膜,但调控机理有待明确,今后可以在TiZrV薄膜研究的基础上进一步进行双层薄膜的研究,也可横向拓展进行新型薄膜体系,如ZrCoRE等新型合金薄膜的研究。

基于MEMS的硅基PZT薄膜微力传感芯片

为了测量毫克级的微小力，设计并制造了一种硅基PZT薄膜悬臂式微力传感芯片。采用溶胶-凝胶（Sol-Gel）方法在Pt／Ti／SiO2／Si衬底上成功制备了厚度不同（300-800nm）的锆钛酸铅（Pb（ZrxTi1-x）O3）薄膜，薄膜表面均匀，无裂纹。通过测试和分析，研究了PZT薄膜的制备工艺参数和压电、铁电、阻抗特性。采用微机械加工手段制作了长度为1000μm、500μm、250μm的硅基PZT薄膜微型悬臂结构。当在悬臂的自由端沿着厚度方向施加毫克级的微小力时，微型悬臂就会在厚度方向发生弯曲和振动，通过测量在压电材料表面电极上的电荷量，并通过计算可得到微型悬臂所受的集中力的大小，实现微力的测量。该文还对微力传感芯片的工作方式进行了研究，初步设计了传感器系统模型。