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Nuclear Properties of Carbon Nanotubes for Fast Neutron Detection
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作者 Jorge Antonio Garcia Gallardo +2 位作者 Sebastián Beneitez Pupo Mauricio Petaccia Juana Gervasoni 《Journal of Energy and Power Engineering》 2018年第4期192-196,共5页
Fast neutron detection is a subject of great relevance in modem nuclear science and engineering, in particular, with the recent advances in nuclear fusion research, detection of fast neutron became a key issue. Nuclea... Fast neutron detection is a subject of great relevance in modem nuclear science and engineering, in particular, with the recent advances in nuclear fusion research, detection of fast neutron became a key issue. Nuclear properties of carbon are of special interest due to its relatively high capture cross section for fast neutrons. Devices made of silicon carbide and diamond are based on these properties, and so are being developed to be used with the proper wiring. In addition, in recent years carbon nano-tubes unveiled their electrical and mechamical properties, which can be exploited for neutron detection. In this work, we use MCNP5 Monte Carlo code to analyze the carbon nuclear properties and discuss the way nano-tubes can be used for fast neutron detection. 展开更多
关键词 Fast neutron nuclear fusion carbon nano-tube nano-device.
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Tuning the Fermi level in Bi2Se3 bulk materials and transport devices
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作者 Zhi-yong Wang (1) Peng Wei (1) Jing Shi (1) 《Frontiers of physics》 SCIE CSCD 2012年第2期160-164,共5页
Bi2Se3 has been predicted to be a three-dimensional (3D) topological insulator (TI) with Dirac fermions residing on the two-dimensional (2D) surface. Unique transport properties such as high carrier mobility due... Bi2Se3 has been predicted to be a three-dimensional (3D) topological insulator (TI) with Dirac fermions residing on the two-dimensional (2D) surface. Unique transport properties such as high carrier mobility due to the suppressed backscattering are expected for the Dirac fermions. In order to eliminate the contribution of the bulk carriers, therefore, to place the Fermi level in the band gap of Bi2Se3, we first introduce various amounts of Ca dopants into the crystal to realize the bulk insulating state. Then by avoiding uncontrolled heating and electron beam irradiation in the nanofabrication process, we maintain the insulating state in thin devices. By sweeping the gate voltage, we have observed a conductivity minimum that is expected for the Dirac fermions in the band gap of 3D TIs. 展开更多
关键词 topological insulators Bi2Se3 transport properties nano-devices
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