Identifying the enhancement mechanism of Al/MoO_(3) reactive multilayered films on the ignition ability of semiconductor bridge using a one-dimensional gas-solid two-phase flow model

Energetic Semiconductor bridge(ESCB)based on reactive multilayered films(RMFs)has a promising application in the miniature and intelligence of initiator and pyrotechnics device.Understanding the ignition enhancement mechanism of RMFs on semiconductor bridge(SCB)during the ignition process is crucial for the engineering and practical application of advanced initiator and pyrotechnics devices.In this study,a one-dimensional(1D)gas-solid two-phase flow ignition model was established to study the ignition process of ESCB to charge particles based on the reactivity of Al/MoO_(3) RMFs.In order to fully consider the coupled exothermic between the RMFs and the SCB plasma during the ignition process,the heat release of chemical reaction in RMFs was used as an internal heat source in this model.It is found that the exothermal reaction in RMFs improved the ignition performance of SCB.In the process of plasma rapid condensation with heat release,the product of RMFs enhanced the heat transfer process between the gas phase and the solid charge particle,which accelerated the expansion of hot plasma,and heated the solid charge particle as well as gas phase region with low temperature.In addition,it made up for pressure loss in the gas phase.During the plasma dissipation process,the exothermal chemical reaction in RMFs acted as the main heating source to heat the charge particle,making the surface temperature of the charge particle,gas pressure,and gas temperature rise continuously.This result may yield significant advantages in providing a universal ignition model for miniaturized ignition devices.

Effect of citric acid on microstructure and electrochemical characteristics of high voltage anodized alumina film formed on etched Al Foils

Aluminum capacitor foils with a tunnel etch structure were reacted with boiling water and then anodized at 530 V in boric acid solution or boric acid＋citric acid mixed solution.The microstructure and crystallinity of the resulting anodized film were examined by TEM and XRD.The special capacitance,resistance and withstanding voltage of the film were explored with electrochemical impedance spectroscopy（EIS）,LCR meter and small-current charging.The results show that the high voltage anodized oxide film consists of an inner layer with high crystallinity and an outer layer with low crystallinity.However,the crystallinity of the film formed in boric acid＋citric acid mixed solution is higher than that of the film formed in only boric acid solution,leading to an increase in film＇s field strength and special capacitance.Meanwhile,there are more defects from phase transformation in the out layer of the film formed in boric acid＋citric acid mixed solution than in that of film formed in only boric acid solution,leading to a decrease in film＇s resistance and withstanding voltage.

EFFECT OF ELECTRODEPOSITED Cr_2O_3 OXIDE FILM ON THE OXIDATION OF Fe_3Al

A uniform, dense and defect free Cr2O3 thin film, which is amorphous at ambient temperature, was applied on the surface of intermetallic Fe3Al by electrodeposition reaction sintering, and the effect of this film on the oxidation of Fe3Al at 900 ℃ in air was studied. The films and the oxide scales were analyzed by TEM, EDAX,SEM and XRD.It is proved that, by surface applied Cr2O3 thin film,a continuous, protective,fine grained α-Al2O3 scale was formed on Fe3Al. As a result, the adherence of the scale and oxidation resistance of Fe3Al were improved.

Electroless plating and growth kinetics of Ni-P alloy film on SiC_p/Al composite with high SiC volume fraction

After Sn/Pd activating, the SiCp/Al composite with 65% SiC (volume fraction) was coated by electroless Ni?P alloy plating. Surface morphology of the composite and its effect on the Ni?P alloy depositing process and bonding action of Ni and P atoms in the Ni?P alloy were studied. The results show that inhomogeneous distribution of the Sn/Pd activating points results in preferential deposition of the Ni?P alloy particles on the Al alloy and rough SiC particle surfaces and in the etched caves. The Ni?P alloy film has an amorphous structure where chemical bonding between Ni and P atoms exists. After a continuous Ni?P alloy film formed, electroless Ni?P alloy plating is not affected by surface morphology and characteristics of the SiCp/Al composite any longer, but by the electroless plating process itself. The Ni?P alloy film follows linear growth kinetics with an activation energy of 68.44 kJ/mol.

Investigation of Formation and Inhibition Mechanism of Cerium Conversion Films on Al 2024 Alloy

To study the mechanism of formation and inhibition of Ce conversion films on Al 2024-T3 alloy, scanning microreference electrode technique (SMRE) is used to probe the potential map on Al 2024-T3 in CeCl 3 solution, the localized corrosion of Al alloy decreases with immersion time and disappears finally, which results from the competition of Cl - aggression and Ce 3+ inhibition on alloy surface. The results of X-ray photoelectron spectroscopy (XPS) indicate that the Ce conversion films consist of Al 2O 3, CeO 2 and Ce 2O 3(Ce(OH) 3), and CeO 2/Ce 2O 3 ratio decreases with the immersion time. When a critical pH for Ce(OH) 3 formation was reached, Ce(OH) 3 will precipitate on the micro cathodic area on alloy surface. Consequently, H 2O 2, the product of the catholic reaction will oxidize a part of Ce(OH) 3 to CeO 2, which appears a better corrosion resistance for Al alloys.

Experimental Study on Molecular Arrangement of Nanoscale Lubricant Films——A Review

In order to understand lubrication mechanism at the nanoscale, researchers have used many physical experimental approaches, such as surface force apparatus, atomic force microscopy and ball-on-disk tribometer. The results show that the variation rules of the friction force, film thicknessand viscosity of the lubricant at the nanoscale are different from elastohydrodynamic lubrication （EHL）. It is speculated that these differences are attributed to the special arrangement of the molecules at the nanoscale. However, it is difficult to obtain the molecular orientation and distribution directly from the lubricant molecules in these experiments. In recent years, more and more attention has been paid to use new techniques to overcome the shortcomings of traditional experiments, including various spectral methods. The most representative achievements in the experimental research of molecular arrangement are reviewed in this paper： The change of film structure of a liquid crystal under confinement has been obtained using X-ray method. The molecular orientation change of lubricant films has been observed using absorption spectroscopy. Infrared spectroscopy has been used to measure the anisotropy of molecular orientation in the contact region when the lubricant film thickness is reduced to a few tens of nanometers. In situ Raman spectroscopy has been performed to measure the molecular orientation of the lubricant film semi-quantitatively. These results prove that confinement and shear in the contact region can change the arrangement of lubricant molecules. As a result, the lubrication characteristics are affected. The shortages of these works are also discussed based on practicable results. Further work is needed to separate the information of the solid-liquid interface from the bulk liquid film.

Proton radiation effects on optical constants of Al film reflector

The Al film reflectors can yield a high-reflectance over a broad wavelength region, and have been widely used in the spacecraft optical instruments for high quality optical applications. Under the irradiation of charged particles in the Earth radiation belt, the reflectors could be deteriorated. In order to reveal the deterioration mechanism, the change in optical constants of Al film reflector induced by proton radiation with 60 keV was studied in an environment of vacuum with heat sink. Experimental results showed that when the radiation damage primarily occurs in the Al reflecting film, the extinction coefficient k will gradually decrease with increasing radiation fluence, which results in the decrease of the energies of reflective light. Therefore, the proton radiation induced an obvious degradation of spectral reflectance in the wavelength region from 200 to 800nm on the Al film reflector.

ANALYSIS OF DEPOSITED PRODUCTS AND REANODIZED POROUS LUBRICATING FILM ON A1 AFTER(NH_4)_2MoS_4 SOLUTION TREATMENT

Observation was carried out of the structure of sulphuric,oxalic or phosphoric film on Al after treatment of reanodizing and electrolytic depositing lubricant in (NH_4)_2MoS_4 solution,as well as of the deposited products by means of EMPA,TEM and energy spectro-scopic analysis.The deposited products are mixture of compounds of S and Mo rather than single MoS_2 and most of them dcposited near the surface layer of the film.Some regular long pores without barrier layer occurred in the film,but the regular fine channels without relation to the structural element parameters of original anodized film were found in the thickened barrier layer of phosphoric film.Sulphur may be remained as Mo sulphide in the film during heating under Ar protective environment.

Improvement of Joint Strength of SiCp/Al Metal Matrix Composite in Transient Liquid Phase Bonding Using Cu/Ni/Cu Film Interlayer

The compact oxide on the surface of SiCp/Al metal matrix composite （SiCp/Al MMC） greatly depends on the property of the joint. Inlaid sputtering target was applied to etch the oxide completely on the bonding surface of SiCp/Al MMC by plasma erosion. Cu/Ni/Cu film of 5μm in thickness was prepared by magnetron sputtering method on the clean bonding surface in the same vacuum chamber, which was acted as an interlayer in transient liquid phase （TLP） bonding process. Compared with the same thickness of single Cu foil and Ni foil interlayer, the shear strength of 200 MPa was obtained using Cu/Ni/Cu film interlayer during TLP bonding, which was 89.7% that of base metal. In addition, homogenization of the bonding region and no particle segregation in interfacial region were found by analysis of the joint microstructure. Scanning electron microscopy （SEM） was used to observe the micrograph of the joint interface. The result shows that a homogenous microstructure of joint was achieved, which is similar with that of based metal.

Structure distortion, optical and electrical properties of ZnO thin films co-doped with Al and Sb by sol-gel spin coating

ZnO thin films co-doped with A1 and Sb with different concentrations and a fixed molar ratio of AlCl3 to SbCl3 at 1：2, are prepared by a sol-gel spin-coating method on glass annealed at 550 ℃ for 2 h in air. The x-ray diffraction results confirm that the ZnO thin films co-doped with Al distortion, and the biaxial stresses are 1.03× 10^8. 3.26× 10^8 and Sb are of wurtzite hexagonal ZnO with a very small 5.23 × 10^8, and 6.97× 10^8 Pa, corresponding to those of the ZnO thin films co-doped with Al and Sb in concentrations of 1.5, 3.0, 4.5, 6.0 at% respectively. The optical properties reveal that the ZnO thin films co-doped with Al and Sb have obviously enhanced transmittance in the visible region. The electrical properties show that ZnO thin film co-doped with Al and Sb in a concentration of 1.5 at% has a lowest resistivity of 2.5 Ω·cm.

Formation and capacitance properties of Ti-Al composite oxide film on aluminum

Al specimens were covered with TiO2 film by sol-gel dip-coating and then anodized in ammonium adipate solution.The structure,composition and capacitance properties of the anodic oxide film were investigated by transmission electron microscopy (TEM),Auger electron spectroscopy (AES),X-ray diffractometry (XRD) and electrochemical impedance spectroscopy (EIS).It was found that an anodic oxide film with a dual-layer structure formed between TiO2 coating and Al substrate.The film consisted of an inner Al2O3 layer and an outer Ti-Al composite oxide layer.The thickness of layers varied with the number of times of sol-gel dip-coating.The capacitance of anodic oxide films formed on coated specimens was at most 80% higher than that without TiO2.In film formation mechanism,it was claimed that the formation of composite oxide film was mainly affected by the structure of micro-pores network in TiO2 coating which had an influence on Al3+ and O2? ions transport during the anodizing.

Enhancing the thermal conductivity of polymer-assisted deposited Al_2O_3 film by nitrogen doping

Polymer-assisted deposition technique has been used to deposit Al2O3 and N-doped Al2O3 （AION） thin films on Si（100） substrates. The chemical compositions, crystallinity, and thermal conductivity of the as-grown films have been characterized by X-ray photoelectron spectroscopy （XPS）, X-ray diffraction （XRD）, and 3-omega method, respectively. Amorphous and polycrystalline Al2O3 and AlON thin films have been formed at 700 ℃ and 1000 ℃. The thermal conductivity results indicated that the effect of nitrogen doping on the thermal conductivity is determined by the competition of the increase of Al-N bonding and the suppression of crystallinity. A 67% enhancement in thermal conductivity has been achieved for the samples grown at 700 ℃, demonstrating that the nitrogen doping is an effective way to improve the thermal performance of polymer-assisted-deposited Al2O3 thin films at a relatively low growth temperature.

Enhancement of catalytic and anti-carbon deposition performance of SAPO-34/ZSM-5/quartz films in MTA reaction by Si/Al ratio regulation

In order to further improve the catalytic performance of zeolite catalyst for methanol to aromatics(MTA)technology, the double-tier SAPO-34/ZSM-5/quartz composite zeolite films were successfully synthesized via hydrothermal crystallization. The Si/Al ratio of SAPO-34 film was used as the only variable to study this material. The composite zeolite material with 0.6Si/Al ratio of SAPO-34 has the largest mesoporous specific surface area and the most suitable acid distribution. The catalytic performance for the MTA process showed that 0.6-SAPO-34/ZSM-5/quartz film has as high as 50.3% benzene-toluenexylene selectivity and 670 min lifetime. The MTA reaction is carried out through the path we designed to effectively avoid the hydrocarbon pool circulation of ZSM-5 zeolite, so as to improve the aromatics selectivity and inhibit the occurrence of deep side reactions to a great extent. The coke deposition behavior was monitored by thermogravimetric analysis and gas chromatograph/mass spectrometer, it is found that with the increase of Si/Al ratio, the active intermediates changed from low-substituted methylbenzene to high-substituted methylbenzene, which led to the rapid deactivation of the catalyst. This work provides a possibility to employ the synergy effect of composite zeolite film synthesizing anti-carbon deposition catalyst in MTA reaction.

Microstructure and abrasive wear behaviour of anodizing composite films containing Si C nanoparticles on Ti6Al4V alloy

Anodized composite films containing Si C nanoparticles were synthesized on Ti6Al4 V alloy by anodic oxidation procedure in C4O6H4Na2 electrolyte. Scanning electron microscopy(SEM), energy dispersive spectroscopy(EDS) and X-ray photoelectron spectroscopy(XPS) were employed to characterize the morphology and composition of the films fabricated in the electrolytes with and without addition of Si C nanoparticles. Results show that Si C particles can be successfully incorporated into the oxide film during the anodizing process and preferentially concentrate within internal cavities and micro-cracks. The ball-on-disk sliding tests indicate that Si C-containing oxide films register much lower wear rate than the oxide films without Si C under dry sliding condition. Si C particles are likely to melt and then are oxidized by frictional heat during sliding tests. Potentiodynamic polarization behavior reveals that the anodized alloy with Si C nanoparticles results in a reduction in passive current density to about 1.54×10-8 A/cm2, which is more than two times lower than that of the Ti O2 film(3.73×10-8 A/cm2). The synthesized composite film has good anti-wear and anti-corrosion properties and the growth mechanism of nanocomposite film is also discussed.

Structure and oxidation resistance of W_(1-x)Al_xN composite films

A series of W1?xAlxN films(0<x<38.6%,mole fraction)were deposited by reactive magnetron sputtering.The composition,microstructure,mechanical properties and oxidation resistance of the films were characterized by EPMA,XRD,XPS,nano-indentation,SEM and HRTEM.The effect of Al content on the microstructure and oxidation resistance of W1?xAlxN films was investigated.The results show that WN film has a face-centered cubic structure.The preferred orientation changes from(111)to(200).The W1?xAlxN films consist of a mixture of face-centered cubic W(Al)N and hexagonal wurtzite structure AlN phases.The hardness of the W1?xAlxN films first increases and then decreases with the Al content increasing.The maximum hardness is36GPa,which is obtained at32.4%Al(mole fraction).Compared with WN film,the W1-xAlxN composite films show much better oxidation resistance because of the formation of dense Al2O3oxide layer on the surface.

EIS Characterization of Sealed Anodic Oxide Films on Titanium Alloy Ti-10V-2Fe-3Al

Anodic oxide films grown on titanium alloy Ti-10V-2Fe-3Al in the solution of sodium tartrate, then sealed in boiling deionised water and calcium acetate solution were observed by using field emission scanning electron microscopy （FE-SEM）, and were chemically analysed by using energy dispersive spectroscopy （EDS）. Corrosion behaviour was investigated in a 3.5% sodium chloride solution, using electrochemical impedance spectroscopy （EIS）. The morphology of the anodic oxide films was dependent on the sealing processes. The surface sealed in calcium acetate solution presented a more homogeneous and smooth structure compared with that sealed in boiling deionised water. The corrosion resistance of the oxide films sealed in calcium acetate solution was better than that sealed in boiling deionised water.

Synthesis of free-standing Ga_2O_3 films for flexible devices by water etching of Sr_3Al_2O_6 sacrificial layers

Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga_2O_3 thin films deposited directly on soft substrates would be amorphous mostly. However, the thickness of the thin film obtained by mechanical exfoliation method is difficult to control and the edge of the film is fragile and easy to be damaged. In this work, we fabricated free-standing Ga_2O_3 thin films using the water-soluble perovskite Sr_3Al_2O_6 as a sacrificial buffer layer. The obtained Ga_2O_3 thin films were polycrystalline. The thickness and dimension of the films were controllable. A flexible Ga_2O_3solar-blind UV photodetector was fabricated by transferring the free-standing Ga_2O_3 film on a flexible polyethylene terephthalate substrate. The results displayed that the photoelectric performances of the flexible Ga_2O_3 photodetector were not sensitive to bending of the device. The free-standing Ga_2O_3 thin films synthesized through the method described here can be transferred to any substrates or integrated with other thin films to fabricate electronic devices.

Fluorescence Enhancement of Metal-Capped Perovskite CH3NH3PbI3 Thin Films

We fabricate nano-structural metal films to improve photoluminescence of perovskite films. When the perovskite film is placed on an ammonia-treated alumina film, stronger photoluminescence is found due to local field en- hancement effects. In addition, the oxide spacer layer between the metal （e.g., AI, Ag and Au） substrate and the perovskite film plays an important role. The simulations and experiments imply that the enhancement is related to surface plasmons of nano-structural metals.

Effect of Al_2O_3 Buffer Layers on the Properties of Sputtered VO_2 Thin Films

VO_2 thin films were grown on silicon substrates using Al_2O_3 thin films as the buffer layers. Compared with direct deposition on silicon, VO_2 thin films deposited on Al_2O_3 buffer layers experience a significant improvement in their microstructures and physical properties. By optimizing the growth conditions, the resistance of VO_2 thin films can change by four orders of magnitude with a reduced thermal hysteresis of 4 °C at the phase transition temperature. The electrically driven phase transformation was measured in Pt/Si/Al_2O_3/VO_2/Au heterostructures. The introduction of a buffer layer reduces the leakage current and Joule heating during electrically driven phase transitions. The C–V measurement result indicates that the phase transformation of VO_2 thin films can be induced by an electrical field.

Fabrication and properties of ZAO powder,sputtering target materials and the related films

Aluminum-doped zinc oxide （ZnO：Al）, abbreviated as ZAO, is a novel and widely used transparent conductive material. The ZAO powder was synthesized by chemical coprecipitation. The ZAO ceramic sputtering target materials were fabricated by sintering in air, and ZAO transparent conductive films were prepared by RF magnetron sputtering on glass substrates. XRD proved that such films had an orientation of （002） crystal panel paralleled to the surface of the glass substrate. The average transmittance of the films in the visible region exceeded 80%.