Artificial synapses utilizing spike signals are essential elements of new generation brain-inspired computers.In this paper,we realize light-stimulated adaptive artificial synapse based on nanocrystalline zinc oxide f...Artificial synapses utilizing spike signals are essential elements of new generation brain-inspired computers.In this paper,we realize light-stimulated adaptive artificial synapse based on nanocrystalline zinc oxide film.The artificial synapse photoconductivity shows spike-type signal response,long and short-term memory(LTM and STM),STM-to-LTM transition and paired-pulse facilitation.It is also retaining the memory of previous exposures and demonstrates spike-frequency adaptation properties.A way to implement neurons with synaptic depression,tonic excitation,and delayed accelerating types of response under the influence of repetitive light signals is discussed.The developed artificial synapse is able to become a key element of neuromorphic chips and neuromorphic sensorics systems.展开更多
Nanocrystalline tungsten carbide thin films were fabricated on graphite substrates by plasma enhanced chemical vapor deposition (PECVD) at H2 and Ar atmosphere, using WF6 and CH4 as precursors. The crystal phase, st...Nanocrystalline tungsten carbide thin films were fabricated on graphite substrates by plasma enhanced chemical vapor deposition (PECVD) at H2 and Ar atmosphere, using WF6 and CH4 as precursors. The crystal phase, structure and chemical components of the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy-dispersive spectrometer (EDS), respectively. The results show that the film prepared at CH4/WF6 concentration ratio of 20 and at 800℃ is composed of spherical particles with a diameter of 20-35 nm. Electrochemical investigations show that the electrochemical real surface area of electrode of the film is large, and the electrode of the film exhibits higher electro-catalytic activity in the reaction of methanol oxidation. The designated constant current of the film catalyst is 123.6 mA/cm^2 in the mixture solution of H2SO4 and CH3OH at the concentration of 0.5 and 2.0 mol/L at 70℃, and the designated constant potential is only 0.306 V (vs SCE).展开更多
Tin oxide (SnO2) is one of the most promising transparent conducting oxide materials, which is widely used in thin film gas sensors. We investigate the dependence of the deposition time on structural, morphologicaJ ...Tin oxide (SnO2) is one of the most promising transparent conducting oxide materials, which is widely used in thin film gas sensors. We investigate the dependence of the deposition time on structural, morphologicaJ and hydrogen gas sensing properties of SnO2 thin films synthesized by dc magnetron sputtering. The deposited samples are characterized by XRD, SEM, AFM, surface area measurements and surface profiler. Also the H2 gas sensing properties of SnO2 deposited samples are performed against a wide range of operating temperature. The XRD analysis demonstrates that the degree of crystallinity of the deposited SnO2 films strongly depends on the deposition time. SEM and AFM analyses reveal that the size of nanoparticles or agglomerates, and both average and rms surface roughness is enhanced with the increasing deposition time. Also gas sensors based on these SnO2 nanolayers show an acceptable response to hydrogen at various operating temperatures.展开更多
The B- and P-doped hydrogenated nanocrystalline silicon films (nc-Si:H) are prepared by plasma-enhanced chemical vapour deposition (PECVD). The microstructures of doped nc-Si'H films are carefully and systematic...The B- and P-doped hydrogenated nanocrystalline silicon films (nc-Si:H) are prepared by plasma-enhanced chemical vapour deposition (PECVD). The microstructures of doped nc-Si'H films are carefully and systematically characterized by using high resolution electron microscopy (HREM), Raman scattering, x-ray diffraction (XRD), Auger electron spectroscopy (AES), and resonant nucleus reaction (RNR). The results show that as the doping concentration of PH3 increases, the average grain size (d) tends to decrease and the crystalline volume percentage (Xc) increases simultaneously. For the B-doped samples, as the doping concentration of B2H6 increases, no obvious change in the value of d is observed, but the value of Xc is found to decrease. This is especially apparent in the case of heavy B2H6 doped samples, where the films change from nanocrystalline to amorphous.展开更多
A much larger amount of bonded hydrogen was found in thick nanocrystalline diamond (NCD) films produced by only adding 0.24% N2 into 4% CH4/H2 plasma, as compared to the high quality transparent microcrystalline dia...A much larger amount of bonded hydrogen was found in thick nanocrystalline diamond (NCD) films produced by only adding 0.24% N2 into 4% CH4/H2 plasma, as compared to the high quality transparent microcrystalline diamond (MCD) films, grown using the same growth parameters except for nitrogen. These experimental results clearly evidence that defect formation and impurity incorporation (for example, N and H) impeding diamond grain growth is the main formation mechanism of NCD upon nitrogen doping and strongly support the model proposed in the literature that nitrogen competes with CHx (x = 1, 2, 3) growth species for adsorption sites.展开更多
With electron assisted hot filament chemical vapor deposition technology, nanocrystalline diamond films were deposited on polished n-(100)Si wafer surface. The deposited films were characterized and observed by Raman ...With electron assisted hot filament chemical vapor deposition technology, nanocrystalline diamond films were deposited on polished n-(100)Si wafer surface. The deposited films were characterized and observed by Raman spectrum, X-ray diffraction, semiconductor characterization system and Hall effective measurement system. The results show that with EA-HFCVD, not only an undoped nanocrystalline diamond films with high-conductivity (p-type semiconducting) but also a p-n heterojunction diode between the nanocrystalline diamond films and n-Si substrate is fabricated successfully. The p-n heterojunction has smaller forward resistance and bigger positive resistance. The p-n junction effective is evident.展开更多
In this study, growth of mirror-like ultra-nanocrystalline diamond(UNCD) films by a facile hybrid CVD approach was presented. The nucleation and deposition of UNCD films were conducted in microwave plasma CVD(MPCVD...In this study, growth of mirror-like ultra-nanocrystalline diamond(UNCD) films by a facile hybrid CVD approach was presented. The nucleation and deposition of UNCD films were conducted in microwave plasma CVD(MPCVD) and direct current glow discharge CVD(DC GD CVD) on silicon substrates, respectively. A very high nucleation density(about 1×10^11 nuclei cm^-2) was obtained after plasma pretreatment. Furthermore, large area mirrorlike UNCD films of Φ 50 mm were synthesized by DC GD CVD. The thickness and grain size of the UNCD films are 24 μm and 7.1 nm, respectively. In addition, the deposition mechanism of the UNCD films was discussed.展开更多
Nitrogen-doped nanocrystalline diamond films(N-NDFs)have been deposited on p-type silicon(Si)by microwave plasma chemical vapor deposition.The reaction gases are methane,hydrogen,and nitrogen without the conventional ...Nitrogen-doped nanocrystalline diamond films(N-NDFs)have been deposited on p-type silicon(Si)by microwave plasma chemical vapor deposition.The reaction gases are methane,hydrogen,and nitrogen without the conventional argon(Ar).The N-NDFs were characterized by X-ray diffraction,Raman spectroscopy,and scanning electron microscopy.The grain sizes are of 8~10 nm in dimension.The N-NDF shows n-type behavior and the corresponding N-NDF/p-Si heterojunction diodes are realized with a high rectification ratio of 102 at^7.8 V,and the current density reaches to1.35 A/cm2 at forward voltage of 8.5 V.The findings suggest that fabricated by CH_4/H_2/N_2 without Ar,the N-NDFs and the related rectifying diodes are favorable for achieving high performance diamond-based optoelectronic devices.展开更多
Porous SnO2 nanocrystalline thin films were successfully electrodeposited from an oxygen-saturated acid aqueous solution of SnCl2 containing different concentrations of butyl-rhodamine B(BRhB) at 70℃.BRhB with subs...Porous SnO2 nanocrystalline thin films were successfully electrodeposited from an oxygen-saturated acid aqueous solution of SnCl2 containing different concentrations of butyl-rhodamine B(BRhB) at 70℃.BRhB with substitute of amidocyanogen can be dissolved in the acid deposition solution,where HCl was added to suppress hydrolysis of SnCl2.So it was used as a structure-directing agent to promote the crystal growth of SnO_2.The formed porous morphology and tetragonal rutile crystalline structure of the electrodeposited thin films were controlled by the addition of BRhB with different amounts.展开更多
Nanocrystalline CdSe thin film prepared by chemical solution deposition was imaged in air with a scanning tunnelling microscope(STM). Scanning tunnelling current spectroscopy(STS) was taken at a fixed tip - sample sep...Nanocrystalline CdSe thin film prepared by chemical solution deposition was imaged in air with a scanning tunnelling microscope(STM). Scanning tunnelling current spectroscopy(STS) was taken at a fixed tip - sample separation. Tunnelling current(i) - voltage(v) curve and differential conductance spectrum show an n-type schottky rectifying behaviour and yield a direct measure of band gap energy. An increase of bandgap energy (1.8 - 2.1eV) was measured indicating energy quantization of this particular thin film.,展开更多
Due to its unique properties such as high hardness, light transmittance, thermal conductance, chemical stability and corrosion resistance, diamond has drawn tremendous attention in last two decades. These specific pro...Due to its unique properties such as high hardness, light transmittance, thermal conductance, chemical stability and corrosion resistance, diamond has drawn tremendous attention in last two decades. These specific properties made diamond film a promising material for cutting tools, microwave windows, heat sinks for electronic devices and diamond electrodes. However, the diamond film with grain sizes at microscale usually exhibits high surface roughness and hinders its applications in the microelectro mechanical system (MEMS) and biological field because it is difficult to be polished by mechanical and chemical methods. With the development of the chemical vapor deposition, the nanocrystalline diamond (NCD) film has been fabricated and found new applications. The grain size of NCD film is in the range of 10 to 100 nm, which inherits the properties of the diamond and possesses the unique properties of the nanoscale materials, and the morphology of the NCD film is granular or needle-like structure. The microwave plasma chemical vapor deposition (MPCVD) has been regarded as the most promising method to deposit NCD film at low temperature. Compared to the hot filament CVD, MPCVD can grow high quality NCD film avoiding of the contamination from the filament materials. The MPCVD technique has high plasma density to activate carbonaceous compound and grow NCD film in high growth rate and low substrate temperature. The unique properties of NCD film, such as the superior electrical, mechanical and biological properties facilitate their application in various fields. The biological application, especially as a biocompatible coating, mainly includes the joint replacement implants and protective coatings and the ophthalmological prosthesis.展开更多
The electroplating behavior of nanocrystalline CoNiFe soft magnetic thin film with high saturation magnetic flux density (Bs>2.1 T) and low coercivity (Hc) was investigated using cyclic voltammetry and chronoampero...The electroplating behavior of nanocrystalline CoNiFe soft magnetic thin film with high saturation magnetic flux density (Bs>2.1 T) and low coercivity (Hc) was investigated using cyclic voltammetry and chronoamperometry methods in conjunction with the scanning electron microscopy (SEM/EDX). The results show that, under the experimental conditions, the co-deposition of CoNiFe film behaves anomalously due to the atomic radii of iron series elements following the order of rFe>rCo>rNi. In the case of lower electroplating current density, the co-deposition of CoNiFe film follows a 3-D progressive nucleation/growth mechanism, while in the case of higher electroplating current density, which follows a 3-D instantaneous nucleation/growth mechanism. Meanwhile, the change of nucleation mechanism of CoNiFe film with electroplating current density was interpreted theoretically in the light of quantum chemistry.展开更多
Nanocrystalline diamond films were deposited on Co-cemented carbide substrates using acetone/ H<sub>2</sub>/Ar gas mixture by bias-enhanced hot filament chemical vapor deposition(HFCVD) technique.The evi...Nanocrystalline diamond films were deposited on Co-cemented carbide substrates using acetone/ H<sub>2</sub>/Ar gas mixture by bias-enhanced hot filament chemical vapor deposition(HFCVD) technique.The evidence of nanocrystallinity,smoothness and purity was obtained by characterizing the sample with scanning electron microscopy(SEM),X-ray diffraction(XRD),Raman spectroscopy,atomic force microscopy (AFM ),and field emission transmission electron microscopy(FE-TEM ).The results show that nanocrystalline diamond films consists of nanocrystalline diamond grains with sizes range from 20 to 80 nm and contain a large amount of grain boundaries.The surface roughness of the films is measured as R<sub>a</sub>【50nm.The Raman spectroscopy,XRD pattern,and FE-TEM image of the films indicate the presence of nanocrystalline diamond.A new process is used to deposit composite diamond coatings by a two-step chemical vapor deposition procedure,including first the deposition of the rough polycrystalline diamond and then the smooth fine-grained nanocrystalline diamond film.Such composite diamond coatings not only display good adhesion and wear resistant properties,but also have smooth surfaces that are liable to polishing.This coating technology can not only meet the requirement of the adhesion of diamond coatings,but also reduce surface roughness of diamond coatings effectively,thus remove the obstacles for the industrialization of CVD diamond coatings.The diamondcoated dies with these composite coatings show obvious effect in the practical application.展开更多
AFM has been utilized to study the surface topography and the local conductivity of nanocrystalline TiO2 films. Improving the local conductivity by Ti(iso-C3H7O)4 treatment is characterized by quantitative analysis o...AFM has been utilized to study the surface topography and the local conductivity of nanocrystalline TiO2 films. Improving the local conductivity by Ti(iso-C3H7O)4 treatment is characterized by quantitative analysis of the simultaneous current image. The mechanism of Ti(iso C3H7O)4 treatment is discussed.展开更多
Effect of Ti(iso-C3H7O)4 treatment on the photoinduced charge carrier kinetics of nanocrystalline porous TiO2 films is studied by time-resolved microwave conductivity measurements. Analysis of the transient photocond...Effect of Ti(iso-C3H7O)4 treatment on the photoinduced charge carrier kinetics of nanocrystalline porous TiO2 films is studied by time-resolved microwave conductivity measurements. Analysis of the transient photoconductivity decays indicates that Ti(iso-C3H7O)4 treatment leads to an increased concentration of photogenerated charge carriers and a fast interfacial transfer rate of holes via the surface modification of the freshly growing TiO2 nanocrystallites.展开更多
Nanocrystalline CdTe thin films were prepared by asymmetric rectangular pulse electrodeposition in organic solution at 110 degreesC. STM image shows a porous network morphology constructed by interconnected spherical ...Nanocrystalline CdTe thin films were prepared by asymmetric rectangular pulse electrodeposition in organic solution at 110 degreesC. STM image shows a porous network morphology constructed by interconnected spherical CdTe crystallites with a mean diameter of 4.2 nm. A pronounced size quantization was indicated in the action and absorption spectra. Potentials dependence dual conductive behavior was revealed in the photocurrent-potential (I-V) curves.展开更多
Hydrogenated nanocrystalline silicon thin films were fabricated from Sill4 with H2 dilution at a low substrate temperature of 200℃ by the conventional plasma enhanced chemical vapor deposition technique. A high depos...Hydrogenated nanocrystalline silicon thin films were fabricated from Sill4 with H2 dilution at a low substrate temperature of 200℃ by the conventional plasma enhanced chemical vapor deposition technique. A high deposition rate over 0.75 nm/s can be achieved. Raman scattering spectral measurements revealed that the crystalline fraction and grain size increased with the increase in hydrogen dilution ratio. Fourier transform infrared spectrum measurements showed that the hydrogen content decreased and the Si-H bonding configuration changed mainly from Sill to Sill2 with the increase in hydrogen dilution ratio. This suggested that the hydrogen dilution played an important role in the low-temperature growth of nanocrystalline silicon thin film. The growth mechanism is discussed in terms of a surface diffusion model and hydrogen etching effects.展开更多
Nanocrystalline diamond films were deposited on polished Si wafer surface with electron assisted hot filament chemical vapor deposition at 1 kPa gas pressure, the deposited films were characterized and observed by Ram...Nanocrystalline diamond films were deposited on polished Si wafer surface with electron assisted hot filament chemical vapor deposition at 1 kPa gas pressure, the deposited films were characterized and observed by Raman spectrum, X-ray diffraction, atomic force microscopy and semiconductor characterization system. The results show that when 8 A bias current is applied for 5 h, the surface roughness decreases to 28.5 nm. After 6 and 8 A bias current are applied for 1 h, and the nanocrystalline films deposition continue for 4 h with 0 A bias current at 1 kPa gas pressure. The nanocrystalline diamond films with 0.5×109 and 1×1010 Ω·cm resistivity respectively are obtained. It is demonstrated that electron bombardment plays an important role of nucleation to deposit diamond films with smooth surface and high resistivity.展开更多
Abstract:Nanocrystalline TiO2 thin films have been prepared on a conducting glass surface by coating quantized TiO2 colloids. The photoelectrochemical properties of TiO2 thin films and their dependence on various fact...Abstract:Nanocrystalline TiO2 thin films have been prepared on a conducting glass surface by coating quantized TiO2 colloids. The photoelectrochemical properties of TiO2 thin films and their dependence on various factors have been Studied. To obtain maximum photocurrent optimization of film thickness,sintering temperature and the PH of the electrolyte are very important.展开更多
基金supported by the Ministry of Science and Higher Education of the Russian Federation (Grant№075-15-2020-801)by Non-commercial Foundation for support of Science and Education 《INTELLECT》.
文摘Artificial synapses utilizing spike signals are essential elements of new generation brain-inspired computers.In this paper,we realize light-stimulated adaptive artificial synapse based on nanocrystalline zinc oxide film.The artificial synapse photoconductivity shows spike-type signal response,long and short-term memory(LTM and STM),STM-to-LTM transition and paired-pulse facilitation.It is also retaining the memory of previous exposures and demonstrates spike-frequency adaptation properties.A way to implement neurons with synaptic depression,tonic excitation,and delayed accelerating types of response under the influence of repetitive light signals is discussed.The developed artificial synapse is able to become a key element of neuromorphic chips and neuromorphic sensorics systems.
基金This work was supported by the National Natural Scmnce Foundation of China(Grant Nos.20276069,20476097)
文摘Nanocrystalline tungsten carbide thin films were fabricated on graphite substrates by plasma enhanced chemical vapor deposition (PECVD) at H2 and Ar atmosphere, using WF6 and CH4 as precursors. The crystal phase, structure and chemical components of the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy-dispersive spectrometer (EDS), respectively. The results show that the film prepared at CH4/WF6 concentration ratio of 20 and at 800℃ is composed of spherical particles with a diameter of 20-35 nm. Electrochemical investigations show that the electrochemical real surface area of electrode of the film is large, and the electrode of the film exhibits higher electro-catalytic activity in the reaction of methanol oxidation. The designated constant current of the film catalyst is 123.6 mA/cm^2 in the mixture solution of H2SO4 and CH3OH at the concentration of 0.5 and 2.0 mol/L at 70℃, and the designated constant potential is only 0.306 V (vs SCE).
基金Supported by the Bandar Abbas Branch of the Islamic Azad University
文摘Tin oxide (SnO2) is one of the most promising transparent conducting oxide materials, which is widely used in thin film gas sensors. We investigate the dependence of the deposition time on structural, morphologicaJ and hydrogen gas sensing properties of SnO2 thin films synthesized by dc magnetron sputtering. The deposited samples are characterized by XRD, SEM, AFM, surface area measurements and surface profiler. Also the H2 gas sensing properties of SnO2 deposited samples are performed against a wide range of operating temperature. The XRD analysis demonstrates that the degree of crystallinity of the deposited SnO2 films strongly depends on the deposition time. SEM and AFM analyses reveal that the size of nanoparticles or agglomerates, and both average and rms surface roughness is enhanced with the increasing deposition time. Also gas sensors based on these SnO2 nanolayers show an acceptable response to hydrogen at various operating temperatures.
基金Project supported by the National Natural Science Foundation of China (Grant No 10432050).
文摘The B- and P-doped hydrogenated nanocrystalline silicon films (nc-Si:H) are prepared by plasma-enhanced chemical vapour deposition (PECVD). The microstructures of doped nc-Si'H films are carefully and systematically characterized by using high resolution electron microscopy (HREM), Raman scattering, x-ray diffraction (XRD), Auger electron spectroscopy (AES), and resonant nucleus reaction (RNR). The results show that as the doping concentration of PH3 increases, the average grain size (d) tends to decrease and the crystalline volume percentage (Xc) increases simultaneously. For the B-doped samples, as the doping concentration of B2H6 increases, no obvious change in the value of d is observed, but the value of Xc is found to decrease. This is especially apparent in the case of heavy B2H6 doped samples, where the films change from nanocrystalline to amorphous.
基金Project supported by the National Natural Science Foundation of China (Grant No. 10874021)Natural Science Foundation of Educational Department of Jiangsu Province of China (Grant No. 06kja43014)
文摘A much larger amount of bonded hydrogen was found in thick nanocrystalline diamond (NCD) films produced by only adding 0.24% N2 into 4% CH4/H2 plasma, as compared to the high quality transparent microcrystalline diamond (MCD) films, grown using the same growth parameters except for nitrogen. These experimental results clearly evidence that defect formation and impurity incorporation (for example, N and H) impeding diamond grain growth is the main formation mechanism of NCD upon nitrogen doping and strongly support the model proposed in the literature that nitrogen competes with CHx (x = 1, 2, 3) growth species for adsorption sites.
基金Project supported by the National Natural Science Foundation of China (60277024)
文摘With electron assisted hot filament chemical vapor deposition technology, nanocrystalline diamond films were deposited on polished n-(100)Si wafer surface. The deposited films were characterized and observed by Raman spectrum, X-ray diffraction, semiconductor characterization system and Hall effective measurement system. The results show that with EA-HFCVD, not only an undoped nanocrystalline diamond films with high-conductivity (p-type semiconducting) but also a p-n heterojunction diode between the nanocrystalline diamond films and n-Si substrate is fabricated successfully. The p-n heterojunction has smaller forward resistance and bigger positive resistance. The p-n junction effective is evident.
基金supported by the program of international S&T cooperation(Agreement No.S2015ZR1100)
文摘In this study, growth of mirror-like ultra-nanocrystalline diamond(UNCD) films by a facile hybrid CVD approach was presented. The nucleation and deposition of UNCD films were conducted in microwave plasma CVD(MPCVD) and direct current glow discharge CVD(DC GD CVD) on silicon substrates, respectively. A very high nucleation density(about 1×10^11 nuclei cm^-2) was obtained after plasma pretreatment. Furthermore, large area mirrorlike UNCD films of Φ 50 mm were synthesized by DC GD CVD. The thickness and grain size of the UNCD films are 24 μm and 7.1 nm, respectively. In addition, the deposition mechanism of the UNCD films was discussed.
基金financially supported by the Programs for New Century Excellent Talents in University(NCETNo.06-0303)the National Natural Science Foundation of China(NSFC,No.50772041)
文摘Nitrogen-doped nanocrystalline diamond films(N-NDFs)have been deposited on p-type silicon(Si)by microwave plasma chemical vapor deposition.The reaction gases are methane,hydrogen,and nitrogen without the conventional argon(Ar).The N-NDFs were characterized by X-ray diffraction,Raman spectroscopy,and scanning electron microscopy.The grain sizes are of 8~10 nm in dimension.The N-NDF shows n-type behavior and the corresponding N-NDF/p-Si heterojunction diodes are realized with a high rectification ratio of 102 at^7.8 V,and the current density reaches to1.35 A/cm2 at forward voltage of 8.5 V.The findings suggest that fabricated by CH_4/H_2/N_2 without Ar,the N-NDFs and the related rectifying diodes are favorable for achieving high performance diamond-based optoelectronic devices.
基金supported by the National Natural Science Foundation of China(Nos.20873162,50872007)the State Key Laboratory of Pollution Control and Resource Reuse Foundation(No.PCRRF09006)Beijing Natural Science Foundation(No.8092022).
文摘Porous SnO2 nanocrystalline thin films were successfully electrodeposited from an oxygen-saturated acid aqueous solution of SnCl2 containing different concentrations of butyl-rhodamine B(BRhB) at 70℃.BRhB with substitute of amidocyanogen can be dissolved in the acid deposition solution,where HCl was added to suppress hydrolysis of SnCl2.So it was used as a structure-directing agent to promote the crystal growth of SnO_2.The formed porous morphology and tetragonal rutile crystalline structure of the electrodeposited thin films were controlled by the addition of BRhB with different amounts.
文摘Nanocrystalline CdSe thin film prepared by chemical solution deposition was imaged in air with a scanning tunnelling microscope(STM). Scanning tunnelling current spectroscopy(STS) was taken at a fixed tip - sample separation. Tunnelling current(i) - voltage(v) curve and differential conductance spectrum show an n-type schottky rectifying behaviour and yield a direct measure of band gap energy. An increase of bandgap energy (1.8 - 2.1eV) was measured indicating energy quantization of this particular thin film.,
文摘Due to its unique properties such as high hardness, light transmittance, thermal conductance, chemical stability and corrosion resistance, diamond has drawn tremendous attention in last two decades. These specific properties made diamond film a promising material for cutting tools, microwave windows, heat sinks for electronic devices and diamond electrodes. However, the diamond film with grain sizes at microscale usually exhibits high surface roughness and hinders its applications in the microelectro mechanical system (MEMS) and biological field because it is difficult to be polished by mechanical and chemical methods. With the development of the chemical vapor deposition, the nanocrystalline diamond (NCD) film has been fabricated and found new applications. The grain size of NCD film is in the range of 10 to 100 nm, which inherits the properties of the diamond and possesses the unique properties of the nanoscale materials, and the morphology of the NCD film is granular or needle-like structure. The microwave plasma chemical vapor deposition (MPCVD) has been regarded as the most promising method to deposit NCD film at low temperature. Compared to the hot filament CVD, MPCVD can grow high quality NCD film avoiding of the contamination from the filament materials. The MPCVD technique has high plasma density to activate carbonaceous compound and grow NCD film in high growth rate and low substrate temperature. The unique properties of NCD film, such as the superior electrical, mechanical and biological properties facilitate their application in various fields. The biological application, especially as a biocompatible coating, mainly includes the joint replacement implants and protective coatings and the ophthalmological prosthesis.
文摘The electroplating behavior of nanocrystalline CoNiFe soft magnetic thin film with high saturation magnetic flux density (Bs>2.1 T) and low coercivity (Hc) was investigated using cyclic voltammetry and chronoamperometry methods in conjunction with the scanning electron microscopy (SEM/EDX). The results show that, under the experimental conditions, the co-deposition of CoNiFe film behaves anomalously due to the atomic radii of iron series elements following the order of rFe>rCo>rNi. In the case of lower electroplating current density, the co-deposition of CoNiFe film follows a 3-D progressive nucleation/growth mechanism, while in the case of higher electroplating current density, which follows a 3-D instantaneous nucleation/growth mechanism. Meanwhile, the change of nucleation mechanism of CoNiFe film with electroplating current density was interpreted theoretically in the light of quantum chemistry.
基金Supported by the National Natural Science Foundation of China(50575135)
文摘Nanocrystalline diamond films were deposited on Co-cemented carbide substrates using acetone/ H<sub>2</sub>/Ar gas mixture by bias-enhanced hot filament chemical vapor deposition(HFCVD) technique.The evidence of nanocrystallinity,smoothness and purity was obtained by characterizing the sample with scanning electron microscopy(SEM),X-ray diffraction(XRD),Raman spectroscopy,atomic force microscopy (AFM ),and field emission transmission electron microscopy(FE-TEM ).The results show that nanocrystalline diamond films consists of nanocrystalline diamond grains with sizes range from 20 to 80 nm and contain a large amount of grain boundaries.The surface roughness of the films is measured as R<sub>a</sub>【50nm.The Raman spectroscopy,XRD pattern,and FE-TEM image of the films indicate the presence of nanocrystalline diamond.A new process is used to deposit composite diamond coatings by a two-step chemical vapor deposition procedure,including first the deposition of the rough polycrystalline diamond and then the smooth fine-grained nanocrystalline diamond film.Such composite diamond coatings not only display good adhesion and wear resistant properties,but also have smooth surfaces that are liable to polishing.This coating technology can not only meet the requirement of the adhesion of diamond coatings,but also reduce surface roughness of diamond coatings effectively,thus remove the obstacles for the industrialization of CVD diamond coatings.The diamondcoated dies with these composite coatings show obvious effect in the practical application.
基金This work was supported by National Research Fund for Fundamental Key Project (G2000028205) Innovative Foundation of Chinese Academy of Sciences and the Project of the National Natural Science Foundation of China (29873057). We thank Dr. D.S. Zhang for
文摘AFM has been utilized to study the surface topography and the local conductivity of nanocrystalline TiO2 films. Improving the local conductivity by Ti(iso-C3H7O)4 treatment is characterized by quantitative analysis of the simultaneous current image. The mechanism of Ti(iso C3H7O)4 treatment is discussed.
基金This work was supported by National Research Fund for Fundamental Key Project(G2000028205)Innovative Foundation of Chinese Academy of Sciences(KGCX2-303-02)the Project of the National Natural Science Foundation of China(29873057).
文摘Effect of Ti(iso-C3H7O)4 treatment on the photoinduced charge carrier kinetics of nanocrystalline porous TiO2 films is studied by time-resolved microwave conductivity measurements. Analysis of the transient photoconductivity decays indicates that Ti(iso-C3H7O)4 treatment leads to an increased concentration of photogenerated charge carriers and a fast interfacial transfer rate of holes via the surface modification of the freshly growing TiO2 nanocrystallites.
文摘Nanocrystalline CdTe thin films were prepared by asymmetric rectangular pulse electrodeposition in organic solution at 110 degreesC. STM image shows a porous network morphology constructed by interconnected spherical CdTe crystallites with a mean diameter of 4.2 nm. A pronounced size quantization was indicated in the action and absorption spectra. Potentials dependence dual conductive behavior was revealed in the photocurrent-potential (I-V) curves.
基金supported by the Major State Basic Research and Development Program of China,Ministry of Science and Technology of China (No.G2000028208)
文摘Hydrogenated nanocrystalline silicon thin films were fabricated from Sill4 with H2 dilution at a low substrate temperature of 200℃ by the conventional plasma enhanced chemical vapor deposition technique. A high deposition rate over 0.75 nm/s can be achieved. Raman scattering spectral measurements revealed that the crystalline fraction and grain size increased with the increase in hydrogen dilution ratio. Fourier transform infrared spectrum measurements showed that the hydrogen content decreased and the Si-H bonding configuration changed mainly from Sill to Sill2 with the increase in hydrogen dilution ratio. This suggested that the hydrogen dilution played an important role in the low-temperature growth of nanocrystalline silicon thin film. The growth mechanism is discussed in terms of a surface diffusion model and hydrogen etching effects.
基金Project supported by the National Natural Science Foundation of China (60277024)
文摘Nanocrystalline diamond films were deposited on polished Si wafer surface with electron assisted hot filament chemical vapor deposition at 1 kPa gas pressure, the deposited films were characterized and observed by Raman spectrum, X-ray diffraction, atomic force microscopy and semiconductor characterization system. The results show that when 8 A bias current is applied for 5 h, the surface roughness decreases to 28.5 nm. After 6 and 8 A bias current are applied for 1 h, and the nanocrystalline films deposition continue for 4 h with 0 A bias current at 1 kPa gas pressure. The nanocrystalline diamond films with 0.5×109 and 1×1010 Ω·cm resistivity respectively are obtained. It is demonstrated that electron bombardment plays an important role of nucleation to deposit diamond films with smooth surface and high resistivity.
文摘Abstract:Nanocrystalline TiO2 thin films have been prepared on a conducting glass surface by coating quantized TiO2 colloids. The photoelectrochemical properties of TiO2 thin films and their dependence on various factors have been Studied. To obtain maximum photocurrent optimization of film thickness,sintering temperature and the PH of the electrolyte are very important.