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Electric modulation of anisotropic magnetoresistance in Pt/HfO_(2-x)/NiO_(y)/Ni heterojunctions
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作者 叶晓羽 朱小健 +3 位作者 杨华礼 段吉鹏 孙翠 李润伟 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第8期98-103,共6页
Electric field control of magnetism through nanoionics has attracted tremendous attention owing to its high efficiency and low power consumption.In solid-state dielectrics,an electric field drives the redistribution o... Electric field control of magnetism through nanoionics has attracted tremendous attention owing to its high efficiency and low power consumption.In solid-state dielectrics,an electric field drives the redistribution of ions to create onedimensional magnetic conductive nanostructures,enabling the realization of intriguing magnetoresistance(MR)effects.Here,we explored the electric-controlled nickel and oxygen ion migration in Pt/HfO_(2-x)/NiO_(y)/Ni heterojunctions for MR modulation.By adjusting the voltage polarity and amplitude,the magnetic conductive filaments with mixed nickel and oxygen vacancy are constructed.This results in the reduction of device resistance by~10^(3)folds,and leads to an intriguing partial asymmetric MR effect.We show that the difference of the device resistance under positive and negative saturation magnetic fields exhibits good linear dependence on the magnetic field angle,which can be used for magnetic field direction detection.Our study suggests the potential of electrically controlled ion migration in creating novel magnetic nanostructures for sensor applications. 展开更多
关键词 NANOIONICS resistance random access memory anisotropic magnetoresistance angle detection
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