This work mainly involved the preparation of a nano-scale form-stable phase change material(PCM) consisting of capric and myristic acid(CA-MA) binary eutectic acting as thermal absorbing material and nano silicon ...This work mainly involved the preparation of a nano-scale form-stable phase change material(PCM) consisting of capric and myristic acid(CA-MA) binary eutectic acting as thermal absorbing material and nano silicon dioxide(nano-SiO_2) serving as the supporting material. Industrial water glass for preparation of the nano silicon dioxide matrix and CA-MA eutectic mixture were compounded by single-step sol-gel method with the silane coupling agent. The morphology, chemical characterization and form stability property of the composite PCM were investigated by transmission electron microscopy(TEM), scanning electron microscopy(SEM), Fourier-transform infrared(FT-IR) spectroscopy and polarizing microscopy(POM). It was indicated that the average diameter of the composite PCM particle ranged from 30-100 nm. The CA-MA eutectic was immobilized in the network pores constructed by the Si-O bonds so that the composite PCM was allowed no liquid leakage above the melting temperature of the CA-MA eutectic. Differential scanning calorimetry(DSC) and thermogravimetric analysis(TGA) measurement were conducted to investigate the thermal properties and stability of the composite PCM. From the measurement results, the mass fraction of the CA-MA eutectic in the composite PCM was about 40%. The phase change temperature and latent heat of the composite were determined to be 21.15 ℃ and 55.67 J/g, respectively. Meanwhile, thermal conductivity of the composite was measured to be 0.208 W·m^(-1)·K^(-1) by using the transient hot-wire method. The composite PCM was able to maintain the surrounding temperature close to its phase change temperature and behaved well in thermalregulated performance which was verified by the heat storage-release experiment. This kind of form-stable PCM was supposed to complete thermal insulation even temperature regulation by the dual effect of relatively low thermal conductivity and phase change thermal storage-release properties. So it can be formulated that the nanoscale CA-MA/SiO_2 composite PCM with the form-stable property, good thermal storage capacity and relatively low thermal conductivity can be applied for energy conservation as a kind of thermal functional material.展开更多
Recent progress in nanoscale fabrication allows many fundamental studies of the few dopant atoms in various semiconductor nanostructures. Since the size of nanoscale devices has touched the limit of the nature, a sing...Recent progress in nanoscale fabrication allows many fundamental studies of the few dopant atoms in various semiconductor nanostructures. Since the size of nanoscale devices has touched the limit of the nature, a single dopant atom may dominate the performance of the device. Besides, the quantum computing considered as a future choice beyond Moore's law also utilizes dopant atoms as functional units. Therefore, the dopant atoms will play a significant role in the future novel nanoscale devices. This review focuses on the study of few dopant atoms as quantum components in silicon nanoscale device. The control of the number of dopant atoms and unique quantum transport characteristics induced by dopant atoms are presented. It can be predicted that the development of nanoelectronics based on dopant atoms will pave the way for new possibilities in quantum electronics.展开更多
基金Funded by the National Natural Science Foundation of China(No.51308275)Natural Science Foundation of Liaoning Province(No.SY2016004)the Colleges and Universities Excellent Talents Supporting Plan Program of Liaoning Province(No.LJQ2015049)
文摘This work mainly involved the preparation of a nano-scale form-stable phase change material(PCM) consisting of capric and myristic acid(CA-MA) binary eutectic acting as thermal absorbing material and nano silicon dioxide(nano-SiO_2) serving as the supporting material. Industrial water glass for preparation of the nano silicon dioxide matrix and CA-MA eutectic mixture were compounded by single-step sol-gel method with the silane coupling agent. The morphology, chemical characterization and form stability property of the composite PCM were investigated by transmission electron microscopy(TEM), scanning electron microscopy(SEM), Fourier-transform infrared(FT-IR) spectroscopy and polarizing microscopy(POM). It was indicated that the average diameter of the composite PCM particle ranged from 30-100 nm. The CA-MA eutectic was immobilized in the network pores constructed by the Si-O bonds so that the composite PCM was allowed no liquid leakage above the melting temperature of the CA-MA eutectic. Differential scanning calorimetry(DSC) and thermogravimetric analysis(TGA) measurement were conducted to investigate the thermal properties and stability of the composite PCM. From the measurement results, the mass fraction of the CA-MA eutectic in the composite PCM was about 40%. The phase change temperature and latent heat of the composite were determined to be 21.15 ℃ and 55.67 J/g, respectively. Meanwhile, thermal conductivity of the composite was measured to be 0.208 W·m^(-1)·K^(-1) by using the transient hot-wire method. The composite PCM was able to maintain the surrounding temperature close to its phase change temperature and behaved well in thermalregulated performance which was verified by the heat storage-release experiment. This kind of form-stable PCM was supposed to complete thermal insulation even temperature regulation by the dual effect of relatively low thermal conductivity and phase change thermal storage-release properties. So it can be formulated that the nanoscale CA-MA/SiO_2 composite PCM with the form-stable property, good thermal storage capacity and relatively low thermal conductivity can be applied for energy conservation as a kind of thermal functional material.
基金Project supported by National Key R&D Program of China(No.2016YFA0200503)
文摘Recent progress in nanoscale fabrication allows many fundamental studies of the few dopant atoms in various semiconductor nanostructures. Since the size of nanoscale devices has touched the limit of the nature, a single dopant atom may dominate the performance of the device. Besides, the quantum computing considered as a future choice beyond Moore's law also utilizes dopant atoms as functional units. Therefore, the dopant atoms will play a significant role in the future novel nanoscale devices. This review focuses on the study of few dopant atoms as quantum components in silicon nanoscale device. The control of the number of dopant atoms and unique quantum transport characteristics induced by dopant atoms are presented. It can be predicted that the development of nanoelectronics based on dopant atoms will pave the way for new possibilities in quantum electronics.