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Curved surface effect and emission on silicon nanostructures 被引量:1
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作者 黄伟其 尹君 +6 位作者 周年杰 黄忠梅 苗信建 陈汉琼 苏琴 刘世荣 秦朝建 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第10期292-298,共7页
The curved surface (CS) effect on nanosilicon plays a main role in the activation for emission and photonic manipulation. The CS effect breaks the symmetrical shape of nanosilicon on which some bonds can produce loc... The curved surface (CS) effect on nanosilicon plays a main role in the activation for emission and photonic manipulation. The CS effect breaks the symmetrical shape of nanosilicon on which some bonds can produce localized electron states in the band gap. The investigation in calculation and experiment demonstrates that the different curvatures can form the characteristic electron states for some special bonding on the nanosilicon surface, which are related to a series of peaks in photoluminecience (PL), such as LN, LNO, Lo1, and Lo2 lines in PL spectra due to Si-N, Si-NO, Si=O, and Si-O-Si bonds on curved surface, respectively. Si-Yb bond on curved surface of Si nanostructures can provide the localized states in the band gap deeply and manipulate the emission wavelength into the window of optical communication by the CS effect, which is marked as the Lyb line of electroluminescence (EL) emission. 展开更多
关键词 silicon nanostructures curved surface effect characteristic line localized states
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纳米硅上的弯曲表面效应及其特征发光 被引量:2
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作者 黄伟其 黄忠梅 +4 位作者 苗信建 尹君 周年杰 刘世荣 秦朝建 《物理学报》 SCIE EI CAS CSCD 北大核心 2014年第3期123-130,共8页
纳米硅结构使能带的带隙展宽,并形成准直接能带带隙结构.弯曲表面上的某些键合可以在带隙中产生局域电子态,计算表明:纳米硅弯曲表面上的Si-N,Si=O和Si-O-Si键合能够分别在带隙中2.02 eV,1.78 eV和2.03 eV附近形成局域态子带,对应了实... 纳米硅结构使能带的带隙展宽,并形成准直接能带带隙结构.弯曲表面上的某些键合可以在带隙中产生局域电子态,计算表明:纳米硅弯曲表面上的Si-N,Si=O和Si-O-Si键合能够分别在带隙中2.02 eV,1.78 eV和2.03 eV附近形成局域态子带,对应了实验光致荧光谱(PL)中605 nm处的LN线、693 nm处的LO1线和604 nm处的LO2线特征发光.特别是,Si-Yb键合在纳米硅弯曲表面上可以将发光波长调控到光通信窗口,在1310 nm到1600 nm范围形成LYb线特征发光. 展开更多
关键词 纳米硅结构 弯曲表面效应 局域态 特征线
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