The full potential of optical absorption property must be further cultivated before silicon（Si） semiconductor nanowire（NW） arrays become available for mainstream applications in optoelectronic devices. In this pap...The full potential of optical absorption property must be further cultivated before silicon（Si） semiconductor nanowire（NW） arrays become available for mainstream applications in optoelectronic devices. In this paper, we demonstrate both experimentally and theoretically that an SiO_2 coating can substantially improve the absorption of light in Si NW arrays.When the transparent SiO_2 shell is coated on the outer layer of Si NW, the incident light penetrates better into the absorbing NW core. We provide the detailed theoretical analysis by a combination of finite-difference time-domain（FDTD） analysis.It is demonstrated that increasing the thickness of the dielectric shell, we achieve 1.72 times stronger absorption in the NWs than in uncoated NWs.展开更多
We have investigated the optical properties of laterally aligned Si nanowire （SiNW） arrays in order to explore their potential applicability in transparent electronics. The SiNW array exhibited good optical transpar...We have investigated the optical properties of laterally aligned Si nanowire （SiNW） arrays in order to explore their potential applicability in transparent electronics. The SiNW array exhibited good optical transparency in the visible spectral range with a transmittance of -90% for a NW density of -20-25 per 10 μm. In addition, polarization-dependent measurements revealed a variation in transmittance in the range of 80%-95% depending on the angle between the polarization of incident light and the NW axis. Using the SiNWs, we demonstrated that transparent transistors exhibit good optical transparency （greater than 80%） and showed typical p-type SiNW transistor characteristics.展开更多
基金Project supported by the Science and Technology Project of Zhejiang Province,China(Grant No.2017C31120)
文摘The full potential of optical absorption property must be further cultivated before silicon（Si） semiconductor nanowire（NW） arrays become available for mainstream applications in optoelectronic devices. In this paper, we demonstrate both experimentally and theoretically that an SiO_2 coating can substantially improve the absorption of light in Si NW arrays.When the transparent SiO_2 shell is coated on the outer layer of Si NW, the incident light penetrates better into the absorbing NW core. We provide the detailed theoretical analysis by a combination of finite-difference time-domain（FDTD） analysis.It is demonstrated that increasing the thickness of the dielectric shell, we achieve 1.72 times stronger absorption in the NWs than in uncoated NWs.
文摘We have investigated the optical properties of laterally aligned Si nanowire （SiNW） arrays in order to explore their potential applicability in transparent electronics. The SiNW array exhibited good optical transparency in the visible spectral range with a transmittance of -90% for a NW density of -20-25 per 10 μm. In addition, polarization-dependent measurements revealed a variation in transmittance in the range of 80%-95% depending on the angle between the polarization of incident light and the NW axis. Using the SiNWs, we demonstrated that transparent transistors exhibit good optical transparency （greater than 80%） and showed typical p-type SiNW transistor characteristics.
