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16 channel 200 GHz arrayed waveguide grating based on Si nanowire waveguides 被引量:1
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作者 赵雷 安俊明 +3 位作者 张家顺 宋世娇 吴远大 胡雄伟 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第2期65-68,共4页
A 16 channel arrayed waveguide grating demultiplexer with 200 GHz channel spacing based on Si nanowire waveguides is designed. The transmission spectra response simulated by transmission function method shows that the... A 16 channel arrayed waveguide grating demultiplexer with 200 GHz channel spacing based on Si nanowire waveguides is designed. The transmission spectra response simulated by transmission function method shows that the device has channel spacing of 1.6 nm and crosstalk of 31 dB. The device is fabricated by 193 nm deep UV lithography in silicon-on-substrate. The demultiplexing characteristics are observed with crosstalk of 5-8 dB, central channel's insertion loss of 2.2 dB, flee spectral range of 24.7 nm and average channel spacing of 1.475 nm. The cause of the spectral distortion is analyzed specifically. 展开更多
关键词 integrated optics arrayed waveguide grating Si nanowire waveguides
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A 45-channel 100 GHz AWG based on Si nanowire waveguides
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作者 李凯丽 张家顺 +6 位作者 安俊明 李建光 王亮亮 王玥 吴远大 尹小杰 胡雄伟 《Optoelectronics Letters》 EI 2017年第3期161-164,共4页
A 45-channel 100 GHz arrayed waveguide grating(AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the spectrum simulation. The simulated results show that t... A 45-channel 100 GHz arrayed waveguide grating(AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the spectrum simulation. The simulated results show that the central wavelength and channel spacing are 1 562.1 nm and 0.8 nm, respectively, which are in accord with the designed values, and the crosstalk is about-23 dB. The device is fabricated on silicon-on-insulator(SOI) substrate by deep ultraviolet lithography(DUV) and inductively coupled plasma(ICP) etching technologies. The 45-channel 100 GHz AWG exhibits insertion loss of 6.5 dB and crosstalk of-8 dB. 展开更多
关键词 AWG A 45-channel 100 GHz AWG based on Si nanowire waveguides SOI Si
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Surface Exciton-Plasmon Polariton Enhanced Light Emission via Integration of Single Semiconductor Nanowires with Metal Nanostructures 被引量:2
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作者 Xuejin Zhang Pengwei Wang +3 位作者 Xinzheng Zhang Jun Xu Yongyuan Zhu Dapeng Yu 《Nano Research》 SCIE EI CSCD 2009年第1期47-53,共7页
The light emission enhancement behavior from single ZnO nanowires integrated with metallic contacts is investigated by micro-photoluminescence measurements.Apart from surface plasmon polaritons at the air/metal interf... The light emission enhancement behavior from single ZnO nanowires integrated with metallic contacts is investigated by micro-photoluminescence measurements.Apart from surface plasmon polaritons at the air/metal interface,the emission of a single ZnO nanowire can be coupled into guided modes of surface exciton-plasmon polaritons(SEPPs).The out-coupling avenues of SEPP guided modes are modeled in the presence of nanostructures,such as corrugation and gratings,on the metal surface.The guided modes of SEPPs in metal-contacted ZnO nanowires are calculated using the effective index method.The enhanced light emission from single semiconductor nanowires shows promise for use in highly efficient nano-emitters and nano-lasers,as well as macroscopic solid state light sources with very high efficiency. 展开更多
关键词 Semiconductor nanowires surface plasmon polaritons nanowire waveguides emission enhancement GRATINGS
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