Magnetic semiconductors have been demonstrated to work at low temperatures, but not yet at room temperature for spin electronic applications. In contrast to the p-type diluted magnetic semiconductors, n-type diluted m...Magnetic semiconductors have been demonstrated to work at low temperatures, but not yet at room temperature for spin electronic applications. In contrast to the p-type diluted magnetic semiconductors, n-type diluted magnetic semiconductors are few. Using a combined method of the density function theory and quantum Monte Carlo simulation, we briefly discuss the recent progress to obtain diluted magnetic semiconductors with both p- and n-type carriers by choosing host semiconductors with a narrow band gap. In addition, the recent progress on two-dimensional intrinsic magnetic semiconductors with possible room temperature ferromangetism and quantum anomalous Hall effect are also discussed.展开更多
基金supported by NSFC (Grant No. Y81Z01A1A9)CAS (Grant No. Y929013EA2)+3 种基金UCAS (Grant No.110200M208)the Strategic Priority Research Program of CAS (Grant No. XDB28000000)the National Key R&D Program of China (Grant No.11834014)Beijing Municipal Science & Technology Commission (Grant No. Z181100004218001)
文摘Magnetic semiconductors have been demonstrated to work at low temperatures, but not yet at room temperature for spin electronic applications. In contrast to the p-type diluted magnetic semiconductors, n-type diluted magnetic semiconductors are few. Using a combined method of the density function theory and quantum Monte Carlo simulation, we briefly discuss the recent progress to obtain diluted magnetic semiconductors with both p- and n-type carriers by choosing host semiconductors with a narrow band gap. In addition, the recent progress on two-dimensional intrinsic magnetic semiconductors with possible room temperature ferromangetism and quantum anomalous Hall effect are also discussed.
