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Structural, Optical and Electrical Properties of Li-doped ZnO Thin Films Influenced by Annealing Temperature 被引量:1
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作者 王冰 TANG Lidan +1 位作者 PENG Shujing WANG Jianzhong 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2014年第5期873-876,共4页
Li-doped ZnO thin films had been grown by radio frequency magnetron sputtering and then annealed under various annealing temperatures. The characteristics of ZnO films were examined by XRD, FESEM, Hall measurement and... Li-doped ZnO thin films had been grown by radio frequency magnetron sputtering and then annealed under various annealing temperatures. The characteristics of ZnO films were examined by XRD, FESEM, Hall measurement and optical transmission spectra. Results showed that p type conduction was observed in Li doped ZnO films annealed at 500-600 ℃ and thep type ZnO films possessed a good crystalline with c-axis orientation, dense surface, and average transmission of about 85% in visible spectral region. 展开更多
关键词 doping defects physical vapor deposition processes OXIDES semiconducting -materials heterojunction semiconductor devices
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