Based on the observation that both subthreshold and gate leakage depend on transistors width, this paper introduces a feasible method to fast estimate leakage current in buffers. In simulating of leakage current with ...Based on the observation that both subthreshold and gate leakage depend on transistors width, this paper introduces a feasible method to fast estimate leakage current in buffers. In simulating of leakage current with swept transistor width, we found that gate leakage is not always a linear function of the device geometry. Subsequently, this paper presented the theoretical analysis and experimental evidence of this exceptional gate leakage behavior and developed a design methodology to devise a low-leakage and high-performance buffer with no penalty in area using this deviation.展开更多
Input/output devices for flash memory are exposed to gamma ray irradiation. Total ionizing dose has been shown great influence on characteristic degradation of transistors with different sizes. In this paper, we obser...Input/output devices for flash memory are exposed to gamma ray irradiation. Total ionizing dose has been shown great influence on characteristic degradation of transistors with different sizes. In this paper, we observed a larger increase of off-state leakage in the short channel device than in long one. However, a larger threshold voltage shift is observed for the narrow width device than for the wide one, which is well known as the radiation induced narrow channel effect. The radiation induced charge in the shallow trench isolation oxide influences the electric field of the narrow channel device. Also, the drain bias dependence of the off-state leakage after irradiation is observed, which is called the radiation enhanced drain induced barrier lowing effect. Finally, we found that substrate bias voltage can suppress the off-state leakage, while leading to more obvious hump effect.展开更多
Total ionizing dose responses of different transistor geometries after being irradiated by ^(60)Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator(PD SOI) technology are investigated. The negative thr...Total ionizing dose responses of different transistor geometries after being irradiated by ^(60)Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator(PD SOI) technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor(nMOSFET) is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect(RINCE).The analysis based on a charge sharing model and three-dimensional technology computer aided design(TCAD) simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.展开更多
A tunable single-longitudinal-mode(SLM) semiconductor optical amplifier(SOA)-based fiber laser based on a dispersion-shifted fiber(DSF) is proposed and successfully demonstrated. SLM operation is obtained due to...A tunable single-longitudinal-mode(SLM) semiconductor optical amplifier(SOA)-based fiber laser based on a dispersion-shifted fiber(DSF) is proposed and successfully demonstrated. SLM operation is obtained due to the spectral narrowing effect resulting from inverse four-wave mixing in a DSF. A tunable optical filter performs wavelength selection function. By inserting a length of DSF in the laser cavity, SLM lasing can possibly be obtained when laser oscillation is stably established after traveling through the DSF many roundtrips. Stable tunable SLM oscillation with a signal-to-noise ratio as high as 65 dB over a wavelength range of about 35 nm is achieved experimentally, and each spectral linewidth is less than 6.5 kHz.展开更多
This paper presents a 6 kb SRAM that uses a novel 10T cell to achieve a minimum operating voltage of 320 mV in a 130 nm CMOS process. A number of low power circuit techniques are included to enable the proposed SRAM t...This paper presents a 6 kb SRAM that uses a novel 10T cell to achieve a minimum operating voltage of 320 mV in a 130 nm CMOS process. A number of low power circuit techniques are included to enable the proposed SRAM to operate in the subthreshold region. The reverse short channel effect and the reverse narrow channel effect are utilized to improve the performance of the SRAM. A novel subthreshold pulse generation circuit produces an ideal pulse to make read operation stable. A floating write bit-line effectively reduces the standby leakage consumption. Finally, a short read bit-line makes the read operation fast and energy-saving. Measurements indicate that these techniques are effective, the SRAM can operate at 800 kHz and consume 1.94/zW at its lowest voltage (320 mV).展开更多
基金Supported by the National Natural Science Foundation of China(No.61271149)
文摘Based on the observation that both subthreshold and gate leakage depend on transistors width, this paper introduces a feasible method to fast estimate leakage current in buffers. In simulating of leakage current with swept transistor width, we found that gate leakage is not always a linear function of the device geometry. Subsequently, this paper presented the theoretical analysis and experimental evidence of this exceptional gate leakage behavior and developed a design methodology to devise a low-leakage and high-performance buffer with no penalty in area using this deviation.
文摘Input/output devices for flash memory are exposed to gamma ray irradiation. Total ionizing dose has been shown great influence on characteristic degradation of transistors with different sizes. In this paper, we observed a larger increase of off-state leakage in the short channel device than in long one. However, a larger threshold voltage shift is observed for the narrow width device than for the wide one, which is well known as the radiation induced narrow channel effect. The radiation induced charge in the shallow trench isolation oxide influences the electric field of the narrow channel device. Also, the drain bias dependence of the off-state leakage after irradiation is observed, which is called the radiation enhanced drain induced barrier lowing effect. Finally, we found that substrate bias voltage can suppress the off-state leakage, while leading to more obvious hump effect.
基金Project supported by the Weapon Equipment Pre-Research Foundation of China(Grant No.9140A11020114ZK34147)the Shanghai Municipal Natural Science Foundation,China(Grant No.15ZR1447100)
文摘Total ionizing dose responses of different transistor geometries after being irradiated by ^(60)Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator(PD SOI) technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor(nMOSFET) is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect(RINCE).The analysis based on a charge sharing model and three-dimensional technology computer aided design(TCAD) simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.
基金supported by the National Natural Science Foundation of China(No.61475065)the Guangdong Natural Science Foundation of China(No.2015A030313322)
文摘A tunable single-longitudinal-mode(SLM) semiconductor optical amplifier(SOA)-based fiber laser based on a dispersion-shifted fiber(DSF) is proposed and successfully demonstrated. SLM operation is obtained due to the spectral narrowing effect resulting from inverse four-wave mixing in a DSF. A tunable optical filter performs wavelength selection function. By inserting a length of DSF in the laser cavity, SLM lasing can possibly be obtained when laser oscillation is stably established after traveling through the DSF many roundtrips. Stable tunable SLM oscillation with a signal-to-noise ratio as high as 65 dB over a wavelength range of about 35 nm is achieved experimentally, and each spectral linewidth is less than 6.5 kHz.
基金Project supported by the National Natural Science Foundation of China(No.61306039)the Next Generation of Information Technology for Sensing China(No.XDA06020401)
文摘This paper presents a 6 kb SRAM that uses a novel 10T cell to achieve a minimum operating voltage of 320 mV in a 130 nm CMOS process. A number of low power circuit techniques are included to enable the proposed SRAM to operate in the subthreshold region. The reverse short channel effect and the reverse narrow channel effect are utilized to improve the performance of the SRAM. A novel subthreshold pulse generation circuit produces an ideal pulse to make read operation stable. A floating write bit-line effectively reduces the standby leakage consumption. Finally, a short read bit-line makes the read operation fast and energy-saving. Measurements indicate that these techniques are effective, the SRAM can operate at 800 kHz and consume 1.94/zW at its lowest voltage (320 mV).