Optical near-field imaging and nanostructuring by means of laser ablation

In this review we consider the development of optical near-field imaging and nanostructuring by means of laser ablation since its early stages around the turn of the century.The interaction of short,intense laser pulses with nanoparticles on a surface leads to laterally tightly confined,strongly enhanced electromagnetic fields below and around the nano-objects,which can easily give rise to nanoablation.This effect can be exploited for structuring substrate surfaces on a length scale well below the diffraction limit,one to two orders smaller than the incident laser wavelength.We report on structure formation by the optical near field of both dielectric and metallic nano-objects,the latter allowing even stronger and more localized enhancement of the electromagnetic field due to the excitation of plasmon modes.Structuring with this method enables one to nanopattern large areas in a one-step parallel process with just one laser pulse irradiation,and in the course of time various improvements have been added to this technique,so that also more complex and even arbitrary structures can be produced by means of nanoablation.The near-field patterns generated on the surface can be read out with high resolution techniques like scanning electron microscopy and atomic force microscopy and provide thus a valuable tool-in conjunction with numerical calculations like finite difference time domain(FDTD)simulations-for a deeper understanding of the optical and plasmonic properties of nanostructures and their applications.

Fabrication of Windowed Very-Small-Aperture Laser Diodes

A windowed very small aperture laser (VSAL) source for use in high resolution near field optical data storage is fabricated.The windowed regions are introduced to avoid shorting the pn junction with metal coating and suppress the COD effect.It facilitates producing VSAL by simplified technology and improves the laser performance.A VSAL with 400nm small aperture is demonstrated by focused ion beam (FIB) and the output power is 0 3mW at 31mA.

Laser synthesis and functionalization of nanostructures

This article summarizes work at the Laser Thermal Laboratory and discusses related studies on the laser synthesis and functionalization of semiconductor nanostructures and two-dimensional(2D)semiconductor materials.Research has been carried out on the laser-induced crystallization of thin films and nanostructures.The in situ transmission electron microscopy(TEM)monitoring of the crystallization of amorphous precursors in nanodomains is discussed herein.The directed assembly of silicon nanoparticles and the modulation of their optical properties by phase switching is presented.The vapor-liquid-solid mechanism has been adopted as a bottom-up approach in the synthesis of semiconducting nanowires(NWs).In contrast to furnace heating methods,laser irradiation offers high spatial selectivity and precise control of the heating mechanism in the time domain.These attributes enabled the investigation of NW nucleation and the early stage of nanostructure growth.Site-and shape-selective,on-demand direct integration of oriented NWs was accomplished.Growth of discrete silicon NWs with nanoscale location selectivity by employing near-field laser illumination is also reported herein.Tuning the properties of 2D transition metal dichalcogenides(TMDCs)by modulating the free carrier type,density,and composition can offer an exciting new pathway to various practical nanoscale electronics.In situ Raman probing of laser-induced processing of TMDC flakes was conducted in a TEM instrument.

Second Approximation Model for Optical Head in Super High Density Storage Technology

The paper presents second approximation model for optical head in super high-density storage technology firstly and it is an important part for three grades approximate model of ultra-small-size quantum well corn-shaped laser and simulative calculations. It supplies the important and useful results for the NFOD optical head design with ultra thin active layer and ultra small spot laser.

Clustering study in Eu(DBM)_3Phen-doped polymer optical fibers by optical properties and near-field scanning microscopy

The clusters of Eu^3＋ ion in Eu（DBM）3Phen-doped polymethyl methacrylate （PMMA） have been studied by three means. The relative fluorescence intensity ratio of the ^5D0 → ^7F2 to ^5D0 → ^7F1 transitions with different concentrations of Eu^3＋ in Eu（DBM）3Phen-doped PMMA and metastable-state （^5D0） lifetime dependence on Eu^3＋ concentration axe analyzed. The analysis indicates that there axe no clustering effects in Eu^3＋ ions of Eu（DBM）3Phen-doped PMMA when the Eu^3＋ doping concentration is up to 1.0 wt.-%. At the same time, the clustering effect has not been observed by the scanning neax-field optical microscopy （SNOM） in Eu（DBM）3Phen-doped PMMA with 1.0 wt.-% of Eu^3＋ ions. The analysis reveals that a high concentration of Eu^3＋ can be incorporated into polymer optical fiber （POF） without clustering effect.