Visible-to-near-infrared photodetectors based on SnS/SnSe_(2)and SnSe/SnSe_(2)p−n heterostructures with a fast response speed and high normalized detectivity

The emergent two-dimensional(2D)material,tin diselenide(SnSe_(2)),has garnered significant consideration for its potential in image capturing systems,optical communication,and optoelectronic memory.Nevertheless,SnSe_(2)-based photodetection faces obstacles,including slow response speed and low normalized detectivity.In this work,photodetectors based on SnS/SnSe_(2)and SnSe/SnSe_(2)p−n heterostructures have been implemented through a polydimethylsiloxane(PDMS)−assisted transfer method.These photodetectors demonstrate broad-spectrum photoresponse within the 405 to 850 nm wavelength range.The photodetector based on the SnS/SnSe_(2)heterostructure exhibits a significant responsivity of 4.99×10^(3)A∙W^(−1),normalized detectivity of 5.80×10^(12)cm∙Hz^(1/2)∙W^(−1),and fast response time of 3.13 ms,respectively,owing to the built-in electric field.Meanwhile,the highest values of responsivity,normalized detectivity,and response time for the photodetector based on the SnSe/SnSe_(2)heterostructure are 5.91×10^(3)A∙W^(−1),7.03×10^(12)cm∙Hz^(1/2)∙W−1,and 4.74 ms,respectively.And their photodetection performances transcend those of photodetectors based on individual SnSe_(2),SnS,SnSe,and other commonly used 2D materials.Our work has demonstrated an effective strategy to improve the performance of SnSe_(2)-based photodetectors and paves the way for their future commercialization.

Single-Crystalline In Ga As Nanowires for Room-Temperature High-Performance Near-Infrared Photodetectors

In Ga As is an important bandgap-variable ternary semiconductor which has wide applications in electronics and optoelectronics. In this work, single-crystal In Ga As nanowires were synthesized by a chemical vapor deposition method.Photoluminescence measurements indicate the In Ga As nanowires have strong light emission in near-infrared region. For the first time, photodetector based on as-grown In Ga As nanowires was also constructed. It shows good light response over a broad spectral range in infrared region with responsivity of 6.5×10~3 AW^(-1) and external quantum efficiency of 5.04×10~5%. This photodetector may have potential applications in integrated optoelectronic devices and systems.

Ag-catalyzed GaSb nanowires for flexible near-infrared photodetectors

High-quality narrow bandgap semiconductors nanowires(NWs)challenge the flexible near-infrared(NIR)photodetectors in next-generation imaging,data communication,environmental monitoring,and bioimaging applications.In this work,complementary metal oxide semiconductor-compatible metal of Ag is deposited on glass as the growth catalyst for the surfactantassisted chemical vapor deposition of GaSb NWs.The uniform morphology,balance stoichiometry,high-quality crystallinity,and phase purity of as-prepared NWs are checked by scanning electron microscopy,energy dispersive X-ray spectroscopy,high-resolution transmission electron microscopy,and X-ray diffraction.The electrical properties of as-prepared NWs are studied by constructing back-gated field-effect-transistors,displaying a high I_(on)/I_(off) ratio of 10^(4) and high peak hole mobility of 400 cm^(2)/(V·s).Benefiting from the excellent electrical and mechanical flexibility properties,the as-fabricated NW flexible NIR photodetector exhibits high sensitivity and excellent photoresponse,with responsivity as high as 618 A/W and detectivity as high as 6.7×10^(10) Jones.Furthermore,there is no obvious decline in NIR photodetection behavior,even after parallel and perpendicular folding with 1200 cycles.

Plasmon-enhanced ultra-high photoresponse of single-wall carbon nanotube/copper/silicon near-infrared photodetectors

Single wall carbon nanotube(SWCNT)/Si heterojunction photodetectors have the advantages of high photoresponse ability and simple structure,however,their detection wavelength range are usually lower than 1100 nm,which limits their application in the infrared band.We report a SWCNT/Cu/Si photodetector with both a high photoresponse and a detection range up to the infrared band by depositing a Cu nanoparticles(NPs)layer between a SWCNT film and a n-Si substrate.It was found that the Cu NPs produce strong surface plasmon resonance(SPR)under laser irradiation,which breaks through the limitation of Si band gap and greatly improves the photoresponse of the SWCNT/Cu/Si photodetector in the near infrared band.The responsivity(R)of the photodetector in the wavelength range of 1850–1200 nm reached 2.2–14.15 mA/W,which is the highest value in the reported plasmon enhanced n-Si based photodetectors,and about 20,000 times higher than that of a SWCNT/Si photodetector.Its R value for 1550 nm wavelength used in optical communications reached~8.2 mA/W,which is 64%higher than the previously reported values of commonly used photodetectors.We attribute the significant increase to the strong SPR and low Schottky barrier of Cu with n-Si,which facilitates the generation and transfer of the carriers.

Exploring Nanoscale Perovskite Materials for Next‑Generation Photodetectors:A Comprehensive Review and Future Directions

The rapid advancement of nanotechnology has sparked much interest in applying nanoscale perovskite materials for photodetection applications.These materials are promising candidates for next-generation photodetectors(PDs)due to their unique optoelectronic properties and flexible synthesis routes.This review explores the approaches used in the development and use of optoelectronic devices made of different nanoscale perovskite architectures,including quantum dots,nanosheets,nanorods,nanowires,and nanocrystals.Through a thorough analysis of recent literature,the review also addresses common issues like the mechanisms underlying the degradation of perovskite PDs and offers perspectives on potential solutions to improve stability and scalability that impede widespread implementation.In addition,it highlights that photodetection encompasses the detection of light fields in dimensions other than light intensity and suggests potential avenues for future research to overcome these obstacles and fully realize the potential of nanoscale perovskite materials in state-of-the-art photodetection systems.This review provides a comprehensive overview of nanoscale perovskite PDs and guides future research efforts towards improved performance and wider applicability,making it a valuable resource for researchers.

Low‑Temperature Fabrication of Stable Black‑Phase CsPbI_(3) Perovskite Flexible Photodetectors Toward Wearable Health Monitoring

Flexible wearable optoelectronic devices fabricated fromorganic–inorganic hybrid perovskites significantly accelerate the developmentof portable energy,biomedicine,and sensing fields,but their poor thermal stabilityhinders further applications.Conversely,all-inorganic perovskites possessexcellent thermal stability,but black-phase all-inorganic perovskite filmusually requires high-temperature annealing steps,which increases energy consumptionand is not conducive to the fabrication of flexible wearable devices.In this work,an unprecedented low-temperature fabrication of stable blackphaseCsPbI3perovskite films is demonstrated by the in situ hydrolysis reactionof diphenylphosphinic chloride additive.The released diphenyl phosphateand chloride ions during the hydrolysis reaction significantly lower the phasetransition temperature and effectively passivate the defects in the perovskitefilms,yielding high-performance photodetectors with a responsivity of 42.1 AW−1 and a detectivity of 1.3×10^(14)Jones.Furthermore,high-fidelity imageand photoplethysmography sensors are demonstrated based on the fabricated flexible wearable photodetectors.This work provides a newperspective for the low-temperature fabrication of large-area all-inorganic perovskite flexible optoelectronic devices.

ZnSb/Ti_(3)C_(2)T_(x)MXene van der Waals heterojunction for flexible near-infrared photodetector arrays

Two-dimension(2D)van der Waals heterojunction holds essential promise in achieving high-performance flexible near-infrared(NIR)photodetector.Here,we report the successful fabrication of ZnSb/Ti_(3)C_(2)T_(x)MXene based flexible NIR photodetector array via a facile photolithography technology.The single ZnSb/Ti_(3)C_(2)T_(x)photodetector exhibited a high light-to-dark current ratio of 4.98,fast response/recovery time(2.5/1.3 s)and excellent stability due to the tight connection between 2D ZnSb nanoplates and 2D Ti_(3)C_(2)T_(x)MXene nanoflakes,and the formed 2D van der Waals heterojunction.Thin polyethylene terephthalate(PET)substrate enables the ZnSb/Ti_(3)C_(2)T_(x)photodetector withstand bending such that stable photoelectrical properties with non-obvious change were maintained over 5000 bending cycles.Moreover,the ZnSb/Ti_(3)C_(2)T_(x)photodetectors were integrated into a 26×5 device array,realizing a NIR image sensing application.

Recent progress on stability and applications of flexible perovskite photodetectors

Flexible photodetectors have garnered significant attention by virtue of their potential applications in environmental monitoring,wearable healthcare,imaging sensing,and portable optical communications.Perovskites stand out as particularly promising materials for photodetectors,offering exceptional optoelectronic properties,tunable band gaps,low-temperature solution processing,and notable mechanical flexibility.In this review,we explore the latest progress in flexible perovskite photodetectors,emphasizing the strategies developed for photoactive materials and device structures to enhance optoelectronic performance and stability.Additionally,we discuss typical applications of these devices and offer insights into future directions and potential applications.

Ultrahigh sensitive near-infrared photodetectors based on MoTe2/germanium heterostructure

The efficient near-infrared light detection of the MoTe2/germanium(Ge)heterojunction has been demonstrated.The fabricated MoTe2/Ge van der Waals heterojunction shows excellent photoresponse performances under the illumination of a 915 nm laser.The photoresponsivity and specific detectivity can reach to 12,460 A/W and 3.3×10^12 Jones,respectively.And the photoresponse time is 5 ms.However,the MoTe2/Ge heterojunction suffers from a large reverse current at dark due to the low barrier between MoTe2 and Ge.Therefore,to reduce the reverse current,an ultrathin GeO2 layer deposited by ozone oxidation has been introduced to the MoTe2/Ge heterojunction.The reverse current of the MoTe2/GeO2/Ge heterojunction at dark was suppressed from 0.44µA/µm^2 to 0.03 nA/µm^2,being reduced by more than four orders of magnitude.The MoTe2/Ge heterojunction with the GeO2 layer also exhibits good photoresponse performances,with a high responsivity of 15.6 A/W,short response time of 5 ms,and good specific detectivity of 4.86×10^11 Jones.These properties suggest that MoTe2/Ge heterostructure is one of the promising structures for the development of high performance near-infrared photodetectors.

Space-confined growth of high-quality CsBi3I10 lead-free perovskite film for near-infrared photodetectors with high sensitivity and stability

As a lead-free perovskite,CsBi3I10 has attracted significant attention because of its high thermal tolerance and long electron diffusion length.Solution-processed high-performance CsBi3I10 perovskite devices,however,are hindered by the formation of a two-dimensional structure,which results in an extremely high surface roughness and many pinholes.In this paper,we reported a space-confined growth(SCG)method using a single-layer polystyrene(PS)sphere template to obtain high-smoothness,high-crystallinity,and dense CsBi3I10 perovskite films.Compared with traditionally spin-coated CsBi3I10 photodetectors(PDs),the metal-semiconductor-metal PDs made by SCG showed a higher photocurrent,a lower dark current,and a bigger on/off ratio.In addition,the photocurrent of our unencapsulated CsBi3I10 perovskite PDs was not attenuated under long-time illumination.In addition,when the device was stored in air for 30 d,its performance also showed no degradation,demonstrating ultra-high stability.Furthermore,the synthesis was free of antisolvents,such as chlorobenzene and toluene,which is beneficial for the environmentally friendly assembly of the devices.Our strategy opens up a new way to prepare high-quality lead-free perovskite,which may be useful for applications in light-emitting diodes and solar cells.

Vapor phase growth of two-dimensional PdSe2 nanosheets for high-photoresponsivity near-infrared photodetectors

Palladium diselenide(PdSe2),a stable layered material with pentagonal structure,has attracted extensive interest due to its excellent electrical and optoelectronic performance.Here,we report a reliable process to synthesize PdSe2 via chemical vapor deposition(CVD)method.Through systematic regulation of temperature in the growth process,we can tune the thickness,size,nucleation density and morphology of PdSe2 nanosheets.Field-effect transistors based on PdSe2 nanosheets exhibit n-type behavior and present a high electron mobility of 105 cm^2·V^−1·s^−1.The electrical property of the devices after 6 months keeping in the air show little change,implying outstanding air-stability of PdSe2.In addition,PdSe2 near-infrared photodetector shows a photoresponsivity of 660 A·W^−1 under 914 nm laser.These performances are better than those of most CVD-grown 2D materials,making ultrathin PdSe2 a highly qualified candidate material for next-generation optoelectronic applications.

Recent Progress on Organic Near-Infrared Photodetectors:Mechanism,Devices,and Applications

Comprehensive Summary Near infrared light organic photodetectors have attracted tremendous attention due to their tailorable response,ease of processing,compatibility with flexible substrate,room temperature operation and broad applications such as remote sensing,health monitoring,artificial vision,night vision,and so on.Recently,the great improvement obtained on the important figures of merit performances has made organic photodetectors catch up and even surpass those of inorganic photodetectors in some respects.In this review,after a brief illustration of the organic photodetectors'figures of merit performances,we summarize the research progress of panchromatic and narrowband near infrared light organic photodetectors from their working mechanism,strategies to achieve narrowband near infrared light organic photodetectors,to some practical applications.Finally,we discuss the development challenge of the near infrared light organic photodetectors.

Development of Low Dark Current SiGe Near-Infrared PIN Photodetectors on 300 mm Silicon Wafers

SiGe offers a low-cost alternative to conventional infrared sensor material systems such as InGaAs, InSb, and HgCdTe for developing near-infrared (NIR) photodetector devices that do not require cooling and can operate with relatively low dark current. As a result of the significant difference in thermal expansion coefficients between germanium (Ge) and silicon (Si), tensile strain incorporated into SiGe detector devices through specialized growth processes can extend their NIR wavelength range of operation. We have utilized high throughput, large-area complementary metal-oxide semiconductor (CMOS) technology to fabricate Ge based p-i-n (PIN) detector devices on 300 mm Si wafers. The two-step device fabrication process, designed to effectively reduce the density of defects and dislocations arising during deposition that form recombination centers which can result in higher dark current, involves low temperature epitaxial deposition of Ge to form a thin p+ seed layer, followed by higher temperature deposition of a thicker Ge intrinsic layer. Phosphorus was then ion-implanted to create devices with n+ regions of various doping concentrations. Secondary ion mass spectroscopy (SIMS) has been utilized to determine the doping profiles and material compositions of the layers. In addition, electrical characterization of the I-V photoresponse of different devices from the same wafer with various n+ region doping concentrations has demonstrated low dark current levels (down to below 1 nA at -1 V bias) and comparatively high photocurrent at reverse biases, with optimal response for doping concentration of 5 × 1019 cm-3.

Organic near-infrared photodetectors with photoconductivityenhanced performance

Organic near-infrared(NIR)photodetectors with essential applications in medical diagnostics,night vision,remote sensing,and optical communications have attracted intensive research interest.Compared with most conventional inorganic counterparts,organic semiconductors usually have higher absorption coefficients,and their thin active layer could be sufficient to absorb most incident light for effective photogeneration.However,due to the relatively poor charge mobility of organic materials,it remains challenging to inhibit the photogenerated exciton recombination and effectively extract carriers to their respective electrodes.Herein,this challenge was addressed by increasing matrix conductivities of a ternary active layer(D–A–D structure NIR absorber[2TT-oC6B]:poly(N,N′-bis-4-butylphenyl-N,N′-bisphenyl)benzidin[PolyTPD]:[6,6]-phenyl-C61-butyric acid methyl ester[PCBM]=1:1:1)upon in situ incident light illumination,significantly accelerating charge transport through percolated interpenetrating paths.The greatly enhanced photoconductivity under illumination is intrinsically related to the unique donor–acceptor molecular structures of PolyTPD and 2TT-oC6B,whereas stable intermolecular interaction has been verified by systematic molecular dynamics simulation.In addition,an ultrafast charge transfer time of 0.56 ps from the NIR aggregation-induced luminogens of 2TT-oC6B absorber to PolyTPD and PCBM measured by femtosecond transient absorption spectroscopy is beneficial for effective exciton dissociation.The solution-processed organic NIR photodetector exhibits a fast response time of 83μs and a linear dynamic range value of 111 dB under illumination of 830 nm.Therefore,our work has opened up a pioneering window to enhance photoconductivity through in situ photoirradiation and benefit NIR photodetectors as well as other optoelectronic devices.

Near-Infrared Si_(0.7)Ge_(0.3)/Si p-i-n Photodetector Fabricated on SOI in CMOS Technology

A novel lateral Si 0 7 Ge 0.3 /Si p i n photodetector which is suitable for high speed operation with low voltage and at 0 7～1 1μm wavelengths is demonstrated.The fabrication of the device is carried out on a SOI substrate by using a UHV/CVD SiGe/Si heteroepitaxy technology and a CMOS/SOI process.Biased at 3 0V,the photodetector attained a responsivity of 0 38A/W at its peak response wavelength 0 93μm and exhibited extremely low dark current of less than 1nA,small parasitic capacitance of less than 1 0pF,and short rise time of 2 5ns.The distinct characteristics and process compatibility make it applicable to integrate the photodetector with other silicon based devices to meet the needs of high speed near infrared signal detections.

High responsivity photodetectors based on graphene/WSe_(2) heterostructure by photogating effect

Graphene, with its zero-bandgap electronic structure, is a highly promising ultra-broadband light absorbing material.However, the performance of graphene-based photodetectors is limited by weak absorption efficiency and rapid recombination of photoexcited carriers, leading to poor photodetection performance. Here, inspired by the photogating effect, we demonstrated a highly sensitive photodetector based on graphene/WSe_(2) vertical heterostructure where the WSe_(2) layer acts as both the light absorption layer and the localized grating layer. The graphene conductive channel is induced to produce more carriers by capacitive coupling. Due to the strong light absorption and high external quantum efficiency of multilayer WSe_(2), as well as the high carrier mobility of graphene, a high photocurrent is generated in the vertical heterostructure. As a result, the photodetector exhibits ultra-high responsivity of 3.85×10~4A/W and external quantum efficiency of 1.3 × 10~7%.This finding demonstrates that photogating structures can effectively enhance the sensitivity of graphene-based photodetectors and may have great potential applications in future optoelectronic devices.

Functional near-infrared spectroscopy in non-invasive neuromodulation

Non-invasive cerebral neuromodulation technologies are essential for the reorganization of cerebral neural networks,which have been widely applied in the field of central neurological diseases,such as stroke,Parkinson’s disease,and mental disorders.Although significant advances have been made in neuromodulation technologies,the identification of optimal neurostimulation paramete rs including the co rtical target,duration,and inhibition or excitation pattern is still limited due to the lack of guidance for neural circuits.Moreove r,the neural mechanism unde rlying neuromodulation for improved behavioral performance remains poorly understood.Recently,advancements in neuroimaging have provided insight into neuromodulation techniques.Functional near-infrared spectroscopy,as a novel non-invasive optical brain imaging method,can detect brain activity by measuring cerebral hemodynamics with the advantages of portability,high motion tole rance,and anti-electromagnetic interference.Coupling functional near-infra red spectroscopy with neuromodulation technologies offe rs an opportunity to monitor the cortical response,provide realtime feedbac k,and establish a closed-loop strategy integrating evaluation,feedbac k,and intervention for neurostimulation,which provides a theoretical basis for development of individualized precise neuro rehabilitation.We aimed to summarize the advantages of functional near-infra red spectroscopy and provide an ove rview of the current research on functional near-infrared spectroscopy in transcranial magnetic stimulation,transcranial electrical stimulation,neurofeedback,and braincomputer interfaces.Furthermore,the future perspectives and directions for the application of functional near-infrared spectroscopy in neuromodulation are summarized.In conclusion,functional near-infrared spectroscopy combined with neuromodulation may promote the optimization of central pellral reorganization to achieve better functional recovery form central nervous system diseases.

Near-infrared spectroscopy in schizophrenia:A bibliometric perspective

BACKGROUND Compared with current methods used to assess schizophrenia,near-infrared spectroscopy(NIRS)has the advantages of providing noninvasive and real-time monitoring of functional activities of the brain and providing direct and objective assessment information.AIM To explore the research field of NIRS in schizophrenia from the perspective of bibliometrics.METHODS The Web of Science Core Collection was used as the search tool,and the last search date was April 21,2024.Bibliometric indicators,such as the numbers of publications and citations,were recorded.Bibliometrix and VOS viewer were used for visualization analysis.RESULTS A total of 355 articles from 105 journals were included in the analysis.The overall trend of the number of research publications increased.Schizophrenia Research was identified as an influential journal in the field.Kasai K was one of the most influential and productive authors in this area of research.The University of Tokyo and Japan had the highest scientific output for an institution and a country,respectively.The top ten keywords were“schizophrenia”,“activation”,“near-infrared spectroscopy”,“verbal fluency task”,“cortex”,“brain,performance”,“workingmemory”,“brain activation”,and“prefrontal cortex”.CONCLUSION Our study reveals the evolution of knowledge and emerging trends in the field of NIRS in schizophrenia.the research focus is shifting from underlying disease characteristics to more in-depth studies of brain function and physiological mechanisms.

Visible-to-near-infrared photodetector based on graphene–MoTe2–graphene heterostructure

Graphene and transition metal dichalcogenides(TMDs), two-dimensional materials, have been investigated wildely in recent years. As a member of the TMD family, MoTe2 possesses a suitable bandgap of ~1.0 eV for near infrared(NIR)photodetection. Here we stack the MoTe2 flake with two graphene flakes of high carrier mobility to form a graphene–MoTe2–graphene heterostructure. It exhibits high photo-response to a broad spectrum range from 500 nm to 1300 nm. The photoresponsivity is calculated to be 1.6 A/W for the 750-nm light under 2 V/0 V drain–source/gate bias, and 154 mA/W for the 1100-nm light under 0.5 V/60 V drain–source/gate bias. Besides, the polarity of the photocurrent under zero Vds can be efficiently tuned by the back gate voltage to satisfy different applications. Finally, we fabricate a vertical graphene–MoTe2–graphene heterostructure which shows improved photoresponsivity of 3.3 A/W to visible light.

Metal–Organic Framework‑Based Photodetectors

The unique and interesting physical and chemical properties of metal–organic framework(MOF)materials have recently attracted extensive attention in a new generation of photoelectric applications.In this review,we summarized and discussed the research progress on MOF-based photodetectors.The methods of preparing MOF-based photodetectors and various types of MOF single crystals and thin film as well as MOF composites are introduced in details.Additionally,the photodetectors applications for X-ray,ultraviolet and infrared light,biological detectors,and circularly polarized light photodetectors are discussed.Furthermore,summaries and challenges are provided for this important research field.