Quantum Boltzmann equation solved by Monte Carlo method for nano-scale semiconductor devices simulation

A two-dimensional （2D） full band self-consistent ensemble Monte Carlo （MC） method for solving the quantum Boltzmann equation, including collision broadening and quantum potential corrections, is developed to extend the MC method to the study of nano-scale semiconductor devices with obvious quantum mechanical （QM） effects. The quantum effects both in real space and momentum space in nano-scale semiconductor devices can be simulated. The effective mobility in the inversion layer of n and p channel MOSFET is simulated and compared with experimental data to verify this method. With this method 50nm ultra thin body silicon on insulator MOSFET are simulated. Results indicate that this method can be used to simulate the 2D QM effects in semiconductor devices including tunnelling effect.

Development of 0.5-V Josephson junction array devices for quantum voltage standards

The design, fabrication, and the characterization of a 0.5-V Josephson junction array device are presented for the quantum voltage standards in the National Institute of Metrology(NIM) of China. The device consists of four junction arrays, each of which has 1200 3-stacked Nb/NbxSi1-x/Nb junctions and an on-chip superconducting microwave circuit which is mainly a power divider enabling each Josephson array being loaded with an equal amount of microwave power. A direct current(dc) quantum voltage of about 0.5 V with a ~1-mA current margin of the 1 st quantum voltage step is obtained.To further prove the quality of NIM device, a comparison between the NIM device with the National Institute of Standards and Technology(NIST) programmable Josephson voltage standard(PJVS) system device is conducted. The difference of the reproduced 0.5-V quantum voltage between the two devices is about 0.55 nV, which indicates good agreement between the two devices. With the homemade device, we have realized a precise and applicable 0.5-V applicable-level quantum voltage.

Thermodynamic Performance of Three-Terminal Hybrid Quantum Dot Thermoelectric Devices

We propose four different models of three-terminal quantum dot thermoelectric devices. From general thermodynamic laws, we examine the rew;rsible efficiencies of the four different models. Based on the master equation, the expressions for the efficiency and power output are derived and the corresponding working regions are determined. Moreover, we particularly analyze the performance of a three-terminal hybrid quantum dot refrigerator. The performance characteristic curves and the optimal performance parameters are obtained. Finally, we discuss the influence of the nonradiative effects on the optimal performance parameters in detail.

Quantum search via superconducting quantum interference devices in a cavity

We propose a scheme for implementing the Grover search algorithm with two superconducting quantum interference devices （SQUIDs） in a cavity. Our scheme only requires single resonant interaction of the SQUID-cavity system and the required interaction time is very short. The simplicity of the process and the reduction of the interaction time are important for restraining decoherence.

Flexible Memristive Devices Based on Graphene Quantum-Dot Nanocomposites

Artificial neural networks(ANNs)are attracting attention for their high performance in various fields,because increasing the network size improves its functioning.Since large-scale neural networks are difficult to implement on custom hardware,a two-dimensional(2D)structure is applied to an ANN in the form of a crossbar.We demonstrate a synapse crossbar device from recent research by applying a memristive system to neuromorphic chips.The system is designed using two-dimensional structures,graphene quantum dots(GQDs)and graphene oxide(GO).Raman spectrum analysis results indicate a D-band of 1421 cm^(−1) that occurs in the disorder;band is expressed as an atomic characteristic of carbon in the sp2 hybridized structure.There is also a G-band of 1518 cm^(−1) that corresponds to the graphite structure.The G bands measured for RGO-GQDs present significant GQD edge-dependent shifts with position.To avoid an abruptly-formed conduction path,effect of barrier layer on graphene/ITO interface was investigated.We confirmed the variation in the nanostructure in the RGO-GQD layers by analyzing them using HR-TEM.After applying a negative bias to the electrode,a crystalline RGO-GQD region formed,which a conductive path.Especially,a synaptic array for a neuromorphic chip with GQDs applied was demonstrated using a crossbar array.

Unconventional Geometric Phase-Shift Gates Based on Superconducting Quantum Interference Devices Coupled to a Single-Mode Cavity

We present a scheme to realize geometric phase-shift gate for two superconducting quantum interference device （SQUID） qubits coupled to a single-mode microwave field. The geometric phase-shift gate operation is performed in two lower flux states, and the excited state [2〉 would not participate in the procedure. The SQUIDs undergo no transitions during the gate operation. Thus, the docoherence due to energy spontaneous emission based on the levels of SQUIDs are suppressed. The gate is insensitive to the cavity decay throughout the operation since the cavity mode is displaced along a circle in the phase space, acquiring a phase conditional upon the two lower flux states of the SQUID qubits, and the cavity mode is still in the original vacuum state. Based on the SQUID qubits interacting with the cavity mode, our proposed approach may open promising prospects for quantum iogic in SQUID-system.

Tris(8-Hydroxyquinoline) Aluminum/2-(4-Biphenylyl)-5-(4-Tertbutylphenyl)-1,3,3-Oxadiazole Organic Multiple Quantum Wells for Electroluminescent Devices

Organic multiple quantum wells(OMQWs) consisting of alternating layers of organic materials have been fabricated from tris(8-hydroxyquinoline) aluminum(Alq)and 2-(4-biphenylyl)-5-(4-tertbutylphenyl)-1,3,3-oxadiazole(PBD) by a multisource-type high-vacuum organic molecular deposition.From the small-angle X-ray diffraction patterns of Alq/PBD OMQWs,a periodically layered structure is confirmed through the entire stack.The Alq layer thickness in the OMQWs was varied from 1 nm to 4 nm.From the optical absorption,photoluminescence and electroluminescence measurements,it is found that the exciton energy shifts to higher energy with decreasing Alq layer thickness,The changes of the exciton energy could be interpreted as the confinement effects of exciton in the Alq thin layers.Narrowing of the emission spectrum has also been observed for the electroluminescent devices (ELDs) with the OMQWs structure at room temperature.

Improving Efficiency by Doping PtOEP into Spiro Light-Emitting Devices

To investigate effective means of improving the efficiency of organic light-emitting devices （OLEDs） by making full use of ,triplet emission, a phosphorescent material Pt （II） Octaethylporphine （PtOEP） is doped into polymer host polyspirobifluorene （Spiro） to allow radiative recombination of triplet excitons. The current and brightness characteristics of the devices are tested and the electroluminescent spectra are described. Both fluorescence and phosphorescence are ob- served,and an obvious increase in external quantum efficiency is realized compared to undoped devices when different phosphorescent dopant concentrations are tried. Thus,the phosphorescent emission from triplet excited states might be an effective way to increase the efficiency of OLEDs when the concentration of the phosphorescent dopant is properiy controlled.

Low-T_c direct current superconducting quantum interference device magnetometer-based 36-channel magnetocardiography system in a magnetically shielded room

We constructed a 36-channel magnetocardiography（MCG） system based on low-Tc direct current（DC） superconducting quantum interference device（SQUID） magnetometers operated inside a magnetically shielded room（MSR）. Weakly damped SQUID magnetometers with large Steward–Mc Cumber parameter βc（βc≈ 5）, which could directly connect to the operational amplifier without any additional feedback circuit, were used to simplify the readout electronics. With a flux-to-voltage transfer coefficient V / Φ larger than 420 μV/Φ0, the SQUID magnetometers had a white noise level of about 5.5 f T·Hz-1/2when operated in MSR. 36 sensing magnetometers and 15 reference magnetometers were employed to realize software gradiometer configurations. The coverage area of the 36 sensing magnetometers is 210×210 mm2. MCG measurements with a high signal-to-noise ratio of 40 d B were done successfully using the developed system.

Materials and device engineering to achieve high-performance quantum dots light emitting diodes for display applications

Quantum dots(QDs)have attracted wide attention from academia and industry because of their advantages such as high emitting efficiency,narrow half-peak width,and continuously adjustable emitting wavelength.QDs light emitting diodes(QLEDs)are expected to become the next generation commercial display technology.This paper reviews the progress of QLED from physical mechanism,materials,to device engineering.The strategies to improve QLED performance from the perspectives of quantum dot materials and device structures are summarized.

Free-space measurement-device-independent quantum-key-distribution protocol using decoy states with orbital angular momentum

In this paper, we propose a measurement-device-independent quantum-key-distribution（MDI-QKD） protocol using orbital angular momentum（OAM） in free space links, named the OAM-MDI-QKD protocol. In the proposed protocol,the OAM states of photons, instead of polarization states, are used as the information carriers to avoid the reference frame alignment, the decoy-state is adopted to overcome the security loophole caused by the weak coherent pulse source, and the high efficient OAM-sorter is adopted as the measurement tool for Charlie to obtain the output OAM state. Here, Charlie may be an untrusted third party. The results show that the authorized users, Alice and Bob, could distill a secret key with Charlie＇s successful measurements, and the key generation performance is slightly better than that of the polarization-based MDI-QKD protocol in the two-dimensional OAM cases. Simultaneously, Alice and Bob can reduce the number of flipping the bits in the secure key distillation. It is indicated that a higher key generation rate performance could be obtained by a high dimensional OAM-MDI-QKD protocol because of the unlimited degree of freedom on OAM states. Moreover,the results show that the key generation rate and the transmission distance will decrease as the growth of the strength of atmospheric turbulence（AT） and the link attenuation. In addition, the decoy states used in the proposed protocol can get a considerable good performance without the need for an ideal source.

Electrically driven uniaxial stress device for tuning in situ semiconductor quantum dot symmetry and exciton emission in cryostat

Uniaxial stress is a powerful tool for tuning exciton emitting wavelength, polarization, fine-structure splitting (FSS), and the symmetry of quantum dots (QDs). Here, we present a technique for applying uniaxial stress, which enables us in situ to tune exciton optical properties at low temperature down to 15 K with high tuning precision. The design and operation of the device are described in detail. This technique provides a simple and convenient approach to tune QD structural symmetry, exciton energy and biexciton binding energy. It can be utilized for generating entangled and indistinguishable photons. Moreover, this device can be employed for tuning optical properties of thin film materials at low temperature.

A New Conducting Polymer Electrode for Organic Electroluminescence Devices

Conducting polymer polydimethylsiloxane （PDMS） is studied for the high performance electrode of organic electroluminescence devices. A method to prepare the electrode consisting of a SiC thin film and PDMS is investigated. By using ultra thin SiC films with different thicknesses, the organic electroluminescence devices are obtained in an ultra vacuum system with the model device PDMS/SiC/PPV/Alq3, where PPV is poly para-phenylene vinylene and Alq3 is tris（S-hydroxyquinoline） aluminium. The capacitance voltage （C - V）, capacitance-frequency （C - F）, current-voltage （I - V）, radiation intensity-voltage （R - V） and luminance eFficiency-voltage （E - V） measurements are systematically studied to investigate the conductivity, Fermi alignment and devices properties in organic semiconductors. Scanning Kelvin probe measurement shows that the work function of PDMS/SiC anode with a 2.5-nm SiC over layer can be increased by as much as 0.28eV, compared to the conventional ITO anode. The result is attributed to the charge transfer effect and ohmic contacts at the interface.

Security of a practical semi-device-independent quantum key distribution protocol against collective attacks

Similar to device-independent quantum key distribution （DI-QKD）, semi-device-independent quantum key distribu- tion （SDI-QKD） provides secure key distribution without any assumptions about the internal workings of the QKD devices. The only assumption is that the dimension of the Hilbert space is bounded. But SDI-QKD can be implemented in a one- way prepare-and-measure configuration without entanglement compared with DI-QKD. We propose a practical SDI-QKD protocol with four preparation states and three measurement bases by considering the maximal violation of dimension witnesses and specific processes of a QKD protocol. Moreover, we prove the security of the SDI-QKD protocol against collective attacks based on the min-entropy and dimension witnesses. We also show a comparison of the secret key rate between the SDI-QKD protocol and the standard QKD.

Implementation of quantum partial search with superconducting quantum interference device qudits in cavity QED

We present a method to implement the quantum partial search of the database separated into any number of blocks with qudits, D-level quantum systems. Compared with the partial search using qubits, our method needs fewer iteration steps and uses the carriers of the information more economically. To illustrate how to realize the idea with concrete physical systems, we propose a scheme to carry out a twelve-dimensional partial search of the database partitioned into three blocks with superconducting quantum interference devices （SQUIDs） in cavity QED. Through the appropriate modulation of the amplitudes of the microwave pulses, the scheme can overcome the non-identity of the cavity-SQUID coupling strengths due to the parameter variations resulting from the fabrication processes. Numerical simulation under the influence of the cavity and SQUID decays shows that the scheme could be achieved efficiently within current state-of-the-art technology.

Bright hybrid white light-emitting quantum dot device with direct charge injection into quantum dot

A bright white quantum dot light-emitting device （white-QLED） with 4-[4-（1-phenyl-lH-benzo[d]imidazol-2- yl）phenyl]-2- [3-（tri-phenylen-2-yl）phen-3-yl]quinazoline deposited on a thin film of mixed green/red-QDs as a bilayer emitter is fabricated. The optimized white-QLED exhibits a turn-on voltage of 3.2 V and a maximum brightness of 3660 cd/m2 @8 V with the Commission Internationale de l＇Eclairage （CIE） chromaticity in the region of white light. The ultra-thin layer of QDs is proved to be critical for the white light generation in the devices. Excitation mechanism in the white-QLEDs is investigated by the detailed analyses of electroluminescence （EL） spectral and the fluorescence lifetime of QDs. The results show that charge injection is a dominant mechanism of excitation in the white-QLED.

Spin-filter effect and spin-polarized optoelectronic properties in annulene-based molecular spintronic devices

Using Fe, Co or Ni chains as electrodes, we designed several annulene-based molecular spintronic devices and investigated the quantum transport properties based on density functional theory and non-equilibrium Green＇s function method.Our results show that these devices have outstanding spin-filter capabilities and exhibit giant magnetoresistance effect,and that with Ni chains as electrodes, the device has the best transport properties. Furthermore, we investigated the spinpolarized optoelectronic properties of the device with Ni electrodes and found that the spin-polarized photocurrents can be directly generated by irradiating the device with infrared, visible or ultraviolet light. More importantly, if the magnetization directions of the two electrodes are antiparallel, the photocurrents with different spins are spatially separated, appearing at different electrodes. This phenomenon provides a new way to simultaneously generate two spin currents.

Jnconventional Geometric Phase Gate with Superconducting Quantum Interference Device Qubits in Cavity QED

In the system with superconducting quantum interference devices （SQUID） in cavity, a scheme for constructing two-qubit quantum phase gate via a conventional geometric phase-shift is proposed by using a quantized cavity field and classical microwave pulses. In this scheme, the gate operation is realized in the subspace spanned by the two lower flux states of the SQUID system mud the population operator of the excited state has no effect on it. Thus the effect of decoherence caused from the levels of the SQUID system is possible to minimize. Under cavity decay, our strictly numerical simulation shows that it is also possible to realize the unconventional geometric phase gate. The experimental feasibility is discussed in detail.

Progress on 2D topological insulators and potential applications in electronic devices

Two-dimensional topological insulators(2DTIs)have attracted increasing attention during the past few years.New 2DTIs with increasing larger spin-orbit coupling(SOC)gaps have been predicted by theoretical calculations and some of them have been synthesized experimentally.In this review,the 2DTIs,ranging from single element graphene-like materials to bi-elemental transition metal chalcogenides(TMDs)and to multi-elemental materials,with different thicknesses,structures,and phases,have been summarized and discussed.The topological properties(especially the quantum spin Hall effect and Dirac fermion feature)and potential applications have been summarized.This review also points out the challenge and opportunities for future 2DTI study,especially on the device applications based on the topological properties.

Room-Temperature Organic Negative Differential Resistance Device Using CdSe Quantum Dots as the ITO Modification Layer

Room-temperature negative differential resistance （NDR） has been observed in different types of organic materials. However, detailed study on the influence of the organic material on NDR performance is still scarce. In this work, room-temperature NDR ＆ observed when CdSe quantum dot （QD） modified ITO is used as the electrode. Furthermore, material dependence of the NDR performance is observed by selecting materials with different charge transporting properties as the active layer, respectively. A peak-to-valley current ratio up to 9 is observed. It is demonstrated that the injection barrier between ITO and the organic active layer plays a decisive role for the device NDR performance. The influence of the aggregation state of CdSe QDs on the NDR performance is also studied, which indicates that the NDR is caused by the resonant tunneling process in the ITO/CdSe QD/organic active layer structure.