Single-mode, long-wavelength vertical-cavity surface-emitting lasers （VCSELs） in the near- to mid-infrared covering the wavelength range from 1.3 to 2.3 μm are presented. This wide spectral emission range opens app...Single-mode, long-wavelength vertical-cavity surface-emitting lasers （VCSELs） in the near- to mid-infrared covering the wavelength range from 1.3 to 2.3 μm are presented. This wide spectral emission range opens applications in gas sensing and optical interconnects. All these lasers are monolithically grown in the InGaAlAs-InP material system utilizing a buried tunnel junction （BTJ） as current aperture. Fabricated with a novel high-speed design with reduced parasitics, bandwidths in excess of 10 GHz at 1.3 and 1.55 μm have been achieved. Therefore, the coarse wavelength division multiplexing （CWDM） wavelength range of 1.3 to 1.6 μm at 10 Gb/s can be accomplished with one technology. Error-free data-transmission at 10 Gb/s over a fiber link of 20 km is demonstrated. One-dimensional arrays have been fabricated with emission wavelengths addressable by current tuning. Micro-electro-mechanical system （MEMS） tunable devices provide an extended tuning range in excess of 50 nm with high spectral purity. All these devices feature continuous-wave （CW） operation with typical single-mode output powers exceeding 1 mW. The operation voltage is around 1 - 1.5 V and power consumption is as low as 10 - 20 mW. Furthermore, we have also developed VCSELs based on GaSb, targeting functionality of tunable diode laser spectroscopy （TDLS） applying a 1.84-μm VCSEL. at the wavelength range from 2.3 to 3.0 μm. The systems is shown by presenting a laser hygrometer展开更多
基金the German Research Council(DFG)the National Natural Science Foundation of China(No.60510173 and 60506006)+1 种基金the European Union via NEMIS(No.FP6-2005-IST-5-031845)the German Federal Ministry of Education and Research via NOSE(No.13N8772).
文摘Single-mode, long-wavelength vertical-cavity surface-emitting lasers （VCSELs） in the near- to mid-infrared covering the wavelength range from 1.3 to 2.3 μm are presented. This wide spectral emission range opens applications in gas sensing and optical interconnects. All these lasers are monolithically grown in the InGaAlAs-InP material system utilizing a buried tunnel junction （BTJ） as current aperture. Fabricated with a novel high-speed design with reduced parasitics, bandwidths in excess of 10 GHz at 1.3 and 1.55 μm have been achieved. Therefore, the coarse wavelength division multiplexing （CWDM） wavelength range of 1.3 to 1.6 μm at 10 Gb/s can be accomplished with one technology. Error-free data-transmission at 10 Gb/s over a fiber link of 20 km is demonstrated. One-dimensional arrays have been fabricated with emission wavelengths addressable by current tuning. Micro-electro-mechanical system （MEMS） tunable devices provide an extended tuning range in excess of 50 nm with high spectral purity. All these devices feature continuous-wave （CW） operation with typical single-mode output powers exceeding 1 mW. The operation voltage is around 1 - 1.5 V and power consumption is as low as 10 - 20 mW. Furthermore, we have also developed VCSELs based on GaSb, targeting functionality of tunable diode laser spectroscopy （TDLS） applying a 1.84-μm VCSEL. at the wavelength range from 2.3 to 3.0 μm. The systems is shown by presenting a laser hygrometer
