Game Theory Based False Negative Probability of Embedded Watermark Under Unintentional and Steganalysis Attacks

Steganalysis attack is to statistically estimate the embedded watermark in the watermarked multimedia,and the estimated watermark may be destroyed by the attacker.The existing methods of false negative probability,however,do not consider the influence of steganalysis attack.This paper proposed the game theory based false negative probability to estimate the impacts of steganalysis attack,as well as unintentional attack.Specifically,game theory was used to model the collision between the embedment and steganalysis attack,and derive the optimal building embedding/attacking strategy.Such optimal playing strategies devote to calculating the attacker destructed watermark,used for calculation of the game theory based false negative probability.The experimental results show that watermark detection reliability measured using our proposed method,in comparison,can better reflect the real scenario in which the embedded watermark undergoes unintentional attack and the attacker using steganalysis attack.This paper provides a foundation for investigating countermeasures of digital watermarking community against steganalysis attack.

Anomalous low-temperature heat capacity in antiperovskite compounds

The low-temperature heat capacities are studied for antiperovskite compounds AX M_3（A = Al, Ga, Cu, Ag, Sn, X = C,N, M = Mn, Fe, Co）. A large peak in（C- γ T）/T^3 versus T is observed for each of a total of 18 compounds investigated,indicating an existence of low-energy phonon mode unexpected by Debye T^3 law. Such a peak is insensitive to the external magnetic field up to 80 k Oe（1 Oe = 79.5775 A·m-1）. For compounds with smaller lattice constant, the peak shifts towards higher temperatures with a reduction of peak height. This abnormal peak in（C- γ T）/T^3 versus T of antiperovskite compound may result from the strongly dispersive acoustic branch due to the heavier A atoms and the optical-like mode from the dynamic rotation of X M_6 octahedron. Such a low-energy phonon mode may not contribute negatively to the normal thermal expansion in AX M_3 compounds, while it is usually concomitant with negative thermal expansion in open-structure material（e.g., ZrW_2O_8, Sc F_3）.

Mn-based MXene with high lithium-ion storage capacity

3d-transition metal(Fe,Co,Ni,and Mn)-based MXene materials have been predicted to demonstrate exceptional electrochemical performance because of their good electrical conductivity and the presence of metallic atoms with multiple charge states.However,until now,there have been no reports on MXenes based on Fe,Co,Ni,and Mn,due to the lack of 3d-metal-layered precursors.Herein,we successfully synthesized the first 3d-transition metal-based MXenes,Mn_(2)CT_(x) by exfoliating a layered precursor derived from the anti-perovskite bulk Mn3GaC.The as-prepared Mn_(2)CT_(x) MXene nanosheets were employed as anode materials in lithium-ion batteries,which exhibited stable storage capacity of 764.7 mAh·g^(-1) at 0.5 C,placing its storage capacities at an upper-middle level compared with other reported MXene materials as well as other Mn-based anode materials.Overall,this study opens a new avenue for MXene research by synthesizing 3d-transition metal-based MXenes for electrochemical applications.

Rosenthal's inequalities for independent and negatively dependent random variables under sub-linear expectations with applications

Classical Kolmogorov's and Rosenthal's inequalities for the maximum partial sums of random variables are basic tools for studying the strong laws of large numbers.In this paper,motived by the notion of independent and identically distributed random variables under the sub-linear expectation initiated by Peng(2008),we introduce the concept of negative dependence of random variables and establish Kolmogorov's and Rosenthal's inequalities for the maximum partial sums of negatively dependent random variables under the sub-linear expectations.As an application,we show that Kolmogorov's strong law of larger numbers holds for independent and identically distributed random variables under a continuous sub-linear expectation if and only if the corresponding Choquet integral is finite.

A Li_(3)P nanoparticle dispersion strengthened ultrathin Li metal electrode for high energy density rechargeable batteries

Achievement of lithium(Li)metal anode with thin thickness(e.g.,≤30µm)is highly desirable for rechargeable high energy density batteries.However,the fabrication and application of such thin Li metal foil electrode remain challenging due to the poor mechanical processibility and inferior electrochemical performance of metallic Li.Here,mechanico-chemical synthesis of robust ultrathin Li/Li_(3)P(LLP)composite foils(~15µm)is demonstrated by employing repeated mechanical rolling/stacking operations using red P and metallic Li as raw materials.The in-situ formed Li+-conductive Li_(3)P nanoparticles in metallic Li matrix and their tight bonding strengthen the mechanical durability and enable the successful fabrication of free-standing ultrathin Li metal composite foil.Besides,it also reduces the electrochemical Li nucleation barrier and homogenizes Li plating/stripping behavior.When matching to high-voltage LiCoO_(2),the full cell with a low negative/positive(N/P)capacity ratio of~1.5 offers a high energy density of~522 W·h·kg^(-1) at 0.5 C based on the mass of cathode and anode.Taking into account its facile manufacturing,potentially low cost,and good electrochemical performance,we believe that such an ultrathin composite Li metal foil design with nanoparticle-dispersion-strengthened mechanism may boost the development of high energy density Li metal batteries.

A noise immunity improved level shift structure for a 600 V HVIC

A novel level shift circuit featuring with high dV/dt noise immunity and improved negative V_S capacity is proposed in this paper.Compared with the conventional structure,the proposed circuit adopting two cross-coupled PMOS transistors realizes the selective filtering ability by exploiting the path which filters out the noise introduced by the dV/dt.In addition,a differential noise cancellation circuit is proposed to enhance the noise immunity further.Meanwhile,the negative V_S capacity is improved by unifying the detected reference voltage and the logic block＇s threshold voltage.A high voltage half bridge gate drive IC adopting the presented structure is experimentally realized by using a usual 600 V BCD process and achieves the stable operation up to 65 V/ns of the dV/dt characteristics.

Exponential inequalities under the sub-linear expectations with applications to laws of the iterated logarithm

Kolmogorov's exponential inequalities are basic tools for studying the strong limit theorems such as the classical laws of the iterated logarithm for both independent and dependent random variables. This paper establishes the Kolmogorov type exponential inequalities of the partial sums of independent random variables as well as negatively dependent random variables under the sub-linear expectations. As applications of the exponential inequalities, the laws of the iterated logarithm in the sense of non-additive capacities are proved for independent or negatively dependent identically distributed random variables with finite second order moments.For deriving a lower bound of an exponential inequality, a central limit theorem is also proved under the sublinear expectation for random variables with only finite variances.