Spin logic devices based on negative differential resistance -enhanced anomalous Hall effect

Owing to rapid developments in spintronics,spin-based logic devices have emerged as promising tools for next-generation computing technologies.This paper provides a comprehensive review of recent advancements in spin logic devices,particularly focusing on fundamental device concepts rooted in nanomagnets,magnetoresistive random access memory,spin–orbit torques,electric-field modu-lation,and magnetic domain walls.The operation principles of these devices are comprehensively analyzed,and recent progress in spin logic devices based on negative differential resistance-enhanced anomalous Hall effect is summarized.These devices exhibit reconfigur-able logic capabilities and integrate nonvolatile data storage and computing functionalities.For current-driven spin logic devices,negative differential resistance elements are employed to nonlinearly enhance anomalous Hall effect signals from magnetic bits,enabling reconfig-urable Boolean logic operations.Besides,voltage-driven spin logic devices employ another type of negative differential resistance ele-ment to achieve logic functionalities with excellent cascading ability.By cascading several elementary logic gates,the logic circuit of a full adder can be obtained,and the potential of voltage-driven spin logic devices for implementing complex logic functions can be veri-fied.This review contributes to the understanding of the evolving landscape of spin logic devices and underscores the promising pro-spects they offer for the future of emerging computing schemes.

Negative Differential Resistance of Au-MgB2-Au Nanoscale Junctions

The electron transport of linear atomic chain trodes was investigated by using the density Green＇s function method. We have calculated of MgB2 sandwiched between Au（100） elecfunctional theory with the non-equilibrium the corresponding cohesion energy and conductance of junctions in different distance. It is found that, at the equilibrium position, the Au-B bond-length is 1.90 A, the B-Mg bond-length is 2.22 A, and the equilibrium conductance is 0.51G0 （Go=2e^2/h）. The transport channel is almost formed by the π antibonding orbitals, which was made up of the Px and Py orbital electrons of B and Mg atoms. In the voltage range of -1.5 to 1.5 V, the junctions show the metallic behaviors. When the voltage is larger than 1.5 V, the current decreases gradually and then negative differential resistance appears almost symmetrically on both positive and negative bias.

Negative Differential Resistance and Spin-Filtering Effects in Zigzag Graphene Nanoribbons with Nitrogen-Vacancy Defects

We explore the electronic and transport properties of zigzag graphene nanoribbons （GNRs） with nitrogen-vacancy defects by performing fully self-consistent spin-polarized density functional theory calculations combined with non-equilibrium Green＇s function technique. We observe robust negative di erential resistance （NDR） effect in all examined molecular junctions. Through analyzing the calculated electronic structures and the bias-dependent transmission coefficients, we find that the narrow density of states of electrodes and the bias-dependent effective coupling between the central molecular orbitals and the electrode subbands are responsible for the observed NDR phenomenon. In addition, the obvious di erence of the transmission spectra of two spin channels is observed in some bias ranges, which leads to the near perfect spin-filtering effect. These theoretical findings imply that GNRs with nitrogenvacancy defects hold great potential for building molecular devices.

Negative differential resistance behaviour in N-doped crossed graphene nanoribbons

By using first-principles calculations and nonequilibrium Green＇s function technique, we study elastic transport properties of crossed graphene nanoribbons. The results show that the electronic transport properties of molecular junctions can be modulated by doped atoms. Negative differential resistance （NDR） behaviour can be observed in a certain bias region, when crossed graphene nanoribbons are doped with nitrogen atoms at the shoulder, but it cannot be observed for pristine crossed graphene nanoribbons at low biases. A mechanism for the negative differential resistance behaviour is suggested.

Room-Temperature Organic Negative Differential Resistance Device Using CdSe Quantum Dots as the ITO Modification Layer

Room-temperature negative differential resistance （NDR） has been observed in different types of organic materials. However, detailed study on the influence of the organic material on NDR performance is still scarce. In this work, room-temperature NDR ＆ observed when CdSe quantum dot （QD） modified ITO is used as the electrode. Furthermore, material dependence of the NDR performance is observed by selecting materials with different charge transporting properties as the active layer, respectively. A peak-to-valley current ratio up to 9 is observed. It is demonstrated that the injection barrier between ITO and the organic active layer plays a decisive role for the device NDR performance. The influence of the aggregation state of CdSe QDs on the NDR performance is also studied, which indicates that the NDR is caused by the resonant tunneling process in the ITO/CdSe QD/organic active layer structure.

Negative differential resistance behavior in doped C_(82) molecular devices

By using the first-principle calculations and nonequilibrium Green functions method, the electronic transport properties of molecular devices constructed by C82, C80BN and C80N2 were studied. The results show that the electronic transport properties of molecular devices are affected by doped atoms. Negative differential resistance (NDR) behavior can be observed in certain bias regions for C82 and C80BN molecular devices but cannot be observed for C80N2 molecular device. A mechanism for the negative differential resistance behavior was suggested.

Two-dimensional tetragonal ZnB: A nodalline semimetal with good transport properties

Nodal-line semimetals have become a research hot-spot due to their novel properties and great potential application in spin electronics. It is more challenging to find 2D nodal-line semimetals that can resist the spin–orbit coupling(SOC)effect. Here, we predict that 2D tetragonal Zn B is a nodal-line semimetal with great transport properties. There are two crossing bands centered on the S point at the Fermi surface without SOC, which are mainly composed of the pxy orbitals of Zn and B atoms and the pz orbitals of the B atom. Therefore, the system presents a nodal line centered on the S point in its Brillouin zone(BZ). And the nodal line is protected by the horizontal mirror symmetry M_(z). We further examine the robustness of a nodal line under biaxial strain by applying up to-4% in-plane compressive strain and 5% tensile strain on the Zn B monolayer, respectively. The transmission along the a direction is significantly stronger than that along the b direction in the conductive channel. The current in the a direction is as high as 26.63 μA at 0.8 V, and that in the b direction reaches 8.68 μA at 0.8 V. It is interesting that the transport characteristics of Zn B show the negative differential resistance(NDR) effect after 0.8 V along the a(b) direction. The results provide an ideal platform for research of fundamental physics of 2D nodal-line fermions and nanoscale spintronics, as well as the design of new quantum devices.

4.3 THz quantum-well photodetectors with high detection sensitivity

We demonstrate a high performance GaAs/AlGaAs-based quantum-well photodetector(QWP)device with a peak response frequency of 4.3 THz.The negative differential resistance(NDR)phenomenon is found in the dark currentvoltage(I-V)curve in the current sweeping measurement mode,from which the breakdown voltage is determined.The photocurrent spectra and blackbody current responsivities at different voltages are measured.Based on the experimental data,the peak responsivity of 0.3 A/W(at 0.15 V,8 K)is derived,and the detection sensitivity is higher than 10^(11)Jones,which is in the similar level as that of the commercialized liquid-helium-cooled silicon bolometers.We attribute the high detection performance of the device to the small ohmic contact resistance of-2Ωand the big breakdown bias.

Tunable Thermal Rectification and Negative Differential Thermal Resistance in Gas-Filled Nanostructure with Mechanically-Controllable Nanopillars

In this study,by using the nonequilibrium molecular dynamics and the kinetic theory,we examine the tailored nanoscale thermal transport via a gas-filled nanogap structure with mechanically-controllable nanopillars in one surface only,i.e.,changing nanopillar height.It is found that both the thermal rectification and negative differential thermal resistance(NDTR)effects can be substantially enhanced by controlling the nanopillar height.The maximum thermal rectification ratio can reach 340%and the△T range with NDTR can be significantly enlarged,which can be attributed to the tailored asymmetric thermal resistance via controlled adsorption in height-changing nanopillars,especially at a large temperature difference.These tunable thermal rectification and NDTR mechanisms provide insights for the design of thermal management systems.

Negative differential resistance in molecular devices: the role of molecule-electrode coupling

By applying nonequilibrium Green's function formalism combined with the first-principles density functional theory, we investigate the electronic transport in two molecular junctions constituted by a substituted oligo (phenylene ehtynylene) sand-wiched between two Au electrodes. Our calculations show that the weak molecule-electrode coupling is responsible for the observation of the negative differential resistance (NDR) effect in experiments. When the coupling is weak, the projected density of states (PDOS) of the molecule and the electrodes undergoes a mismatch-match-mismatch procedure, which increases and then decreases the transmission peak intensities, leading to a NDR effect. We also find that the localization/delocalization of the molecular orbitals and the change of charge state of the molecule have no direct relation with the NDR effect, because they change little as the voltage increases.

Effect of boron/nitrogen co-doping on transport properties of C60 molecular devices

By using nonequilibrium Green＇s function method and first-principles calculations, the electronic transport properties of doped C60 molecular devices were investigated. It is revealed that the C60 molecular devices show the metal behavior due to the interaction between the C60 molecule and the metal electrode. The current-voltage curve displays a linear behavior at low bias, and the currents have the relation of MI〉M3〉M4〉M2 when the bias voltage is lower than 0.6 V. Electronic transport properties are affected greatly by the doped atoms. Negative differential resistance is found in a certain bias range for C60 and C58BN molecular devices, but cannot be observed in C59B and C59N molecular devices. These unconventional effects can be used to design novel nanoelectronic devices.

Comparison of resonant tunneling diodes grown on freestanding GaN substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy

AlN/GaN resonant tunneling diodes(RTDs)were grown separately on freestanding Ga N(FS-GaN)substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy(PA-MBE).Room temperature negative differential resistance(NDR)was obtained under forward bias for the RTDs grown on FS-GaN substrates,with the peak current densities(Jp)of 175-700 kA/cm^(2)and peak-to-valley current ratios(PVCRs)of 1.01-1.21.Two resonant peaks were also observed for some RTDs at room temperature.The effects of two types of substrates on epitaxy quality and device performance of GaN-based RTDs were firstly investigated systematically,showing that lower dislocation densities,flatter surface morphology,and steeper heterogeneous interfaces were the key factors to achieving NDR for RTDs.

Negative differential resistance in a molecular junction of carbon nanotube and benzene

We propose a novel molecular junction with single-walled carbon nanotubes as electrodes bridged by a benzene molecule, in which the electrodes are saturated by different terminations (C-, H- and N-). It is found that the different terminations at the carbon nanotube ends strongly affect the electronic transport properties of the junction. The current-voltage (I-V) curve of the N-terminated carbon nanotube junction shows a more striking nonlinear feature than that of the C- and H-terminated junctions at small bias. Moreover, the negative differential resistance behaviors can be observed significantly in the N-terminated carbon nanotube junction, whereas not in the other two cases.

Negative differential resistance behaviors in OPE derivatives combined C_(60) molecular junctions modulated with side groups

By applying non-equilibrium Green's functions (NEGF) in combination with the density functional theory (DFT), we investigate the electronic transport properties of molecular junctions constructed by OPE derivatives with different side groups combined C60 molecules. The results show that the side groups play an important role in the properties of electron transport. Negative differential resistance (NDR) is observed in such devices. Especially for the molecule with electron-donating group ( OCH3), two NDR appear at different bias voltage regions. And the mechanism is proposed for the NDR behavior, owing to the shift of the molecular orbitals caused by the change in molecule charge.

Effects of edge hydrogenation and Si doping on spin-dependent electronic transport properties of armchair boron–phosphorous nanoribbons

In this article, the spin-dependent electronic and transport properties of the armchair boron–phosphorous nanoribbons（ABPNRs） are mainly studied by using the non-equilibrium Green function method combined with the spin-polarized density function theory. Our calculated electronic structures indicate that the edge hydrogenated ABPNRs exhibit a ferromagnetic bipolar magnetic semiconductor property, and that the Si atom doping can make ABPNRs convert into up-spin dominated half metal. The spin-resolved transport property results show that the doped devices can realize 100% spinfiltering function, and that the interesting negative differential resistance phenomenon can be observed. Our calculations suggest that the ABPNRs can be constructed as a spin heterojunction by introducing Si doping partially, and it would be used as a spin-diode for nano-spintronics in future.

Negative differential resistance in an(8,0)carbon/boron nitride nanotube heterojunction

Using the method combined non-equilibrium Green’s function with density functional theory,the electronic transport properties of an（8,0） carbon/boron nitride nanotube heterojunction coupled to Au electrodes were investigated.In the current voltage characteristic of the heterojunction,negative differential resistance was found under positive and negative bias,which is the variation of the localization for corresponding molecular orbital caused by the applied bias voltage.These results are meaningful to modeling and simulating on related electronic devices.

High performance oscillator with 2-mW output power at 300 GHz

Material structures and device structures of a 100-GHz InP based transferred-electron device are designed in this paper. In order to successfully fabricate the Gunn devices operating at 100 GHz, the InP substrate was entirely removed by mechanical thinning and wet etching. The Gunn device was connected to a tripler link and a high RF （radio frequency） output with power of 2 mW working at 300 GHz was obtained, which is high enough for applications in current military electronic systems.

Spin transport properties for B-doped zigzag silicene nanoribbons with different edge hydrogenations

Exploring silicon-based spin modulating junction is one of the most promising areas of spintronics.Using nonequilibrium Green's function combined with density functional theory,a set of spin filters of hydrogenated zigzag silicene nanoribbons is designed by substituting a silicon atom with a boron one and the spin-correlated transport properties are studied.The results show that the spin polarization can be realized by structural symmetry breaking induced by boron doping.Remarkably,by tuning the edge hydrogenation,it is found that the spin filter efficiency can be varied from 30%to 58%.Moreover,it is also found and explained that the asymmetric hydrogenation can give rise to an obvious negative differential resistance which usually appears at weakly coupled junction.These findings indicate that the boron-doped ZSiNR is a promising material for spintronic applications.

Negative Differential Resistance in Atomic Carbon Chain-Graphene Junctions

We investigate the electronic transport properties of atomic carbon chain-graphene junctions by using the density-functionla theory combining with the non-equilibrium Green＇s functions. The results show that the transport properties are sensitively dependent on the contact geometry of carbon chain. From the calculated I-V curve we find negative differential resistance （NDR） in the two types of junctions. The NDR can be considered as a result of molecular orbitals moving related to the bias window.

Observation of negative differential resistance in diketopyrrolopyrrole-based copolymer films

Remarkable and repeatable negative differential resistance (NDR) phenomenon was observed in a metal-polymer-metal structure diode based on bishexyloxy-divinyl-benzene-alt-diketopyrrolopyrrole (C6DPPPPV),a type of donor-acceptor (D-A) conjugated copolymer.Thickness dependence of the devices implied that the observed NDR characteristics were bulk-controlled.The device performance was considered to depend on the slow trapping and releasing processes related to the local deep states,which was enhanced by the growth and thermal rupture of conducting filaments through the organic layer.The results suggest that the D-A conjugated copolymer is a promising memory material based on NDR effect.