A novel high-order curvature compensation negative voltage bandgap reference （NBGR） based on a novel multilevel compensation technique is introduced. Employing an exponential curvature compensation （ECC） term with...A novel high-order curvature compensation negative voltage bandgap reference （NBGR） based on a novel multilevel compensation technique is introduced. Employing an exponential curvature compensation （ECC） term with many high order terms in itself, in a lower temperature range （TR） and a multilevel curvature compen- sation （MLCC） term in a higher TR, a flattened and better effect of curvature compensation over the TR of 165℃ （--40 to 125 ℃） is realised. The MLCC circuit adds two convex curves by using two sub-threshold operated NMOS. The proposed NBGR implemented in the Central Semiconductor Manufacturing Corporation （CSMC） 0.5 #m BCD technology demonstrates an accurate voltage of-1.183 V with a temperature coefficient （TC） as low as 2.45 ppm/℃over the TR of 165℃ at a -5.0 V power supply; the line regulation is 3 mV/V from a -5 to -2 V supply voltage. The active area of the presented NBGR is 370×180 μm2.展开更多
基金Project supported by the Fund of Liaoning Province Education Department(No.L2013045)
文摘A novel high-order curvature compensation negative voltage bandgap reference （NBGR） based on a novel multilevel compensation technique is introduced. Employing an exponential curvature compensation （ECC） term with many high order terms in itself, in a lower temperature range （TR） and a multilevel curvature compen- sation （MLCC） term in a higher TR, a flattened and better effect of curvature compensation over the TR of 165℃ （--40 to 125 ℃） is realised. The MLCC circuit adds two convex curves by using two sub-threshold operated NMOS. The proposed NBGR implemented in the Central Semiconductor Manufacturing Corporation （CSMC） 0.5 #m BCD technology demonstrates an accurate voltage of-1.183 V with a temperature coefficient （TC） as low as 2.45 ppm/℃over the TR of 165℃ at a -5.0 V power supply; the line regulation is 3 mV/V from a -5 to -2 V supply voltage. The active area of the presented NBGR is 370×180 μm2.
