Amorphous Ga_(2)O_(3)(a-Ga_(2)O_(3))has been attracting more and more attention due to its unique merits such as wide bandgap(∼4.9 eV),low growth temperature,large-scale uniformity,low cost and energy efficient,makin...Amorphous Ga_(2)O_(3)(a-Ga_(2)O_(3))has been attracting more and more attention due to its unique merits such as wide bandgap(∼4.9 eV),low growth temperature,large-scale uniformity,low cost and energy efficient,making it a powerful competitor in flexible deep ultraviolet(UV)photodetection.Although the responsivity of the ever-reported a-Ga_(2)O_(3)UV photodetectors(PDs)is usually in the level of hundreds of A/W,it is often accompanied by a large dark current due to the presence of abundant oxygen vacancy(VO)defects,which severely limits the possibility to detect weak signals and achieve versatile applications.In this work,the VO defects in a-Ga_(2)O_(3)thin films are successfully passivated by in-situ hydrogen doping during the magnetron sputtering process.As a result,the dark current of a-Ga_(2)O_(3)UV PD is remarkably suppressed to 5.17×10^(-11) A at a bias of 5 V.Importantly,the photocurrent of the corresponding device is still as high as 1.37×10^(-3)A,leading to a high photo-to-dark current ratio of 2.65×107 and the capability to detect the UV light with the intensity below 10 nW cm^(-2).Moreover,the H-doped a-Ga_(2)O_(3)thin films have also been deposited on polyethylene naphtholate substrates to construct flexible UV PDs,which exhibit no great degradation in bending states and fatigue tests.These results demonstrate that hydrogen doping can effectively improve the performance of a-Ga_(2)O_(3)UV PDs,further promoting its practical application in various areas.展开更多
As phase separation between the small-molecule semiconductor and the polymer binder is the key enabler of blend-based organic field-effect transistors(OFETs)fabricated by low-cost solution processing,it is crucial to ...As phase separation between the small-molecule semiconductor and the polymer binder is the key enabler of blend-based organic field-effect transistors(OFETs)fabricated by low-cost solution processing,it is crucial to understand the underlying phase separation mechanisms that determine the phase morphology,which significantly impacts device performance.Beyond the parameter space investigated in previous work,here we investigate the formation of blends by varying the branch architecture of the polymer binder and by shortening the solvent dry time using ultrasonic spray casting.The phase morphologies of the resulting blend films have been thoroughly characterized with a variety of techniques in three dimensions over multiple length scales,including AFM,energy-filtered transmission electron microscope,and neutron reflectivity,and have been correlated with electrical transport performance.From the results,we have inferred that the phase morphology is kinetically determined,limited by the inherent slow movement of polymer macromolecules.The kinetic picture,supported by molecular dynamics modeling,not only consistently explains our observations but also resolves inconsistencies in previous works.The achieved mechanistic understanding will guide further optimization of blend-based organic electronics,such as OFETs and organic photovoltaics.展开更多
We present measurements of the in situ, microscopic architecture of a self- assembled bilayer at the interface between a regularly nanopatterned surface and an aqueous sub-phase using neutron reflectometry. The substr...We present measurements of the in situ, microscopic architecture of a self- assembled bilayer at the interface between a regularly nanopatterned surface and an aqueous sub-phase using neutron reflectometry. The substrate is patterned with a rectangular array of nanoscale holes. Because of the high quality of the pattern, using neutron reflectometry, we are able to map the surface-normal density distribution of the patterned silicon, the penetration of water into the pattern, and the distribution of a deposited film inside and outside of the etched holes. In this stud; 1,2-dilauroyl-sn-glycero-3-phosphocholine (DLPC) single bilayers were deposited on the hydrophilic patterned surface. For bilayers deposited either by vesicle fusion (VF) or by the Langmuir-Schaefer (L-S) technique, the most consistent model found to fit the data shows that the lipids form bilayer coatings on top of the substrate as well as the bottoms of the holes in an essentially conformal fashion. However, while there is a single bilayer on the unetched silicon surface, the lipids coating the bottoms of the holes form a complex bimodal structure consistent with a rough surface produced by the etching process. This study provides insight into film transfer both outside and inside regular nanopatterned features.展开更多
基金supported by Guangdong Basic and Applied Basic Research Foundation(Grant Nos.2022A1515110607 and 2019B1515120057)the National Natural Science Foundation of China(Grant Nos.62174113,12174275,61874139,61904201 and 11875088).
文摘Amorphous Ga_(2)O_(3)(a-Ga_(2)O_(3))has been attracting more and more attention due to its unique merits such as wide bandgap(∼4.9 eV),low growth temperature,large-scale uniformity,low cost and energy efficient,making it a powerful competitor in flexible deep ultraviolet(UV)photodetection.Although the responsivity of the ever-reported a-Ga_(2)O_(3)UV photodetectors(PDs)is usually in the level of hundreds of A/W,it is often accompanied by a large dark current due to the presence of abundant oxygen vacancy(VO)defects,which severely limits the possibility to detect weak signals and achieve versatile applications.In this work,the VO defects in a-Ga_(2)O_(3)thin films are successfully passivated by in-situ hydrogen doping during the magnetron sputtering process.As a result,the dark current of a-Ga_(2)O_(3)UV PD is remarkably suppressed to 5.17×10^(-11) A at a bias of 5 V.Importantly,the photocurrent of the corresponding device is still as high as 1.37×10^(-3)A,leading to a high photo-to-dark current ratio of 2.65×107 and the capability to detect the UV light with the intensity below 10 nW cm^(-2).Moreover,the H-doped a-Ga_(2)O_(3)thin films have also been deposited on polyethylene naphtholate substrates to construct flexible UV PDs,which exhibit no great degradation in bending states and fatigue tests.These results demonstrate that hydrogen doping can effectively improve the performance of a-Ga_(2)O_(3)UV PDs,further promoting its practical application in various areas.
文摘As phase separation between the small-molecule semiconductor and the polymer binder is the key enabler of blend-based organic field-effect transistors(OFETs)fabricated by low-cost solution processing,it is crucial to understand the underlying phase separation mechanisms that determine the phase morphology,which significantly impacts device performance.Beyond the parameter space investigated in previous work,here we investigate the formation of blends by varying the branch architecture of the polymer binder and by shortening the solvent dry time using ultrasonic spray casting.The phase morphologies of the resulting blend films have been thoroughly characterized with a variety of techniques in three dimensions over multiple length scales,including AFM,energy-filtered transmission electron microscope,and neutron reflectivity,and have been correlated with electrical transport performance.From the results,we have inferred that the phase morphology is kinetically determined,limited by the inherent slow movement of polymer macromolecules.The kinetic picture,supported by molecular dynamics modeling,not only consistently explains our observations but also resolves inconsistencies in previous works.The achieved mechanistic understanding will guide further optimization of blend-based organic electronics,such as OFETs and organic photovoltaics.
文摘We present measurements of the in situ, microscopic architecture of a self- assembled bilayer at the interface between a regularly nanopatterned surface and an aqueous sub-phase using neutron reflectometry. The substrate is patterned with a rectangular array of nanoscale holes. Because of the high quality of the pattern, using neutron reflectometry, we are able to map the surface-normal density distribution of the patterned silicon, the penetration of water into the pattern, and the distribution of a deposited film inside and outside of the etched holes. In this stud; 1,2-dilauroyl-sn-glycero-3-phosphocholine (DLPC) single bilayers were deposited on the hydrophilic patterned surface. For bilayers deposited either by vesicle fusion (VF) or by the Langmuir-Schaefer (L-S) technique, the most consistent model found to fit the data shows that the lipids form bilayer coatings on top of the substrate as well as the bottoms of the holes in an essentially conformal fashion. However, while there is a single bilayer on the unetched silicon surface, the lipids coating the bottoms of the holes form a complex bimodal structure consistent with a rough surface produced by the etching process. This study provides insight into film transfer both outside and inside regular nanopatterned features.