The favourable physical properties of SiC make it a potential material for use as containment layer in new generation nuclear reactors.The material will thus be exposed to high temperatures and fluences from fission p...The favourable physical properties of SiC make it a potential material for use as containment layer in new generation nuclear reactors.The material will thus be exposed to high temperatures and fluences from fission products.The impact of increasing neutron fluence at constant irradiation temperature(800℃)on the properties of neutron-irradiated 3C-SiC was investigated,employing infrared reflectance spectroscopy and atomic force spectroscopy.A relation was found between the neutron fluence and the surface morphology of the irradiated 3CSiC.The varying surface morphology also affected the dielectric parameters of the SiC.展开更多
SILICON is a quite important material in the application of energy resources technology. With the development of ion-implantation technique and the increasing interest in dopping, it is very important to know the rela...SILICON is a quite important material in the application of energy resources technology. With the development of ion-implantation technique and the increasing interest in dopping, it is very important to know the relationship between the vacacies induced by the particle irradiation damage and the annealing temperature. The positron annihilation is a very useful method for studying defects in the semiconductor, because the annihilation characteristics of trapped positron are influenced by the charge of the defects. It has been shown that the positrons can be trapped by defects created by irradi-展开更多
A new EPR center having C2v symmetry and S=1, labeled as Si-PK3, has been observed for the first time in neutron-irradiated FZ-silicon. The spectra start to appear after 150℃ annealing and disappear at 500℃. The pri...A new EPR center having C2v symmetry and S=1, labeled as Si-PK3, has been observed for the first time in neutron-irradiated FZ-silicon. The spectra start to appear after 150℃ annealing and disappear at 500℃. The principal values of tensor g and D are determined. The microscopic model is proposed to be a trivacancy chain along the 〈110〉-direction with an oxygen atom situated in the middle. The annealing temperature of si-PK3 in hydrogencontaining samples is at least by 150℃ lower than that of other samples.展开更多
1 Introduction In recent years, the irradiation defects in CZ-silicon have been studied extensively because the neutron-irradiation defects in CZ-silicon play a key role in controlling the yield and performance of VLS...1 Introduction In recent years, the irradiation defects in CZ-silicon have been studied extensively because the neutron-irradiation defects in CZ-silicon play a key role in controlling the yield and performance of VLSI circuits. However, because of the impurities (oxygen, about 10<sup>18</sup> atoms/cm<sup>3</sup>) in silicon, behavior of irradiation-defects during heat-treatment has been proved to be complicated, while slices are subjected to neutrons irradiation and heat-treatment, the irradiation defect behavior has not been clearly understood yet.展开更多
文摘The favourable physical properties of SiC make it a potential material for use as containment layer in new generation nuclear reactors.The material will thus be exposed to high temperatures and fluences from fission products.The impact of increasing neutron fluence at constant irradiation temperature(800℃)on the properties of neutron-irradiated 3C-SiC was investigated,employing infrared reflectance spectroscopy and atomic force spectroscopy.A relation was found between the neutron fluence and the surface morphology of the irradiated 3CSiC.The varying surface morphology also affected the dielectric parameters of the SiC.
文摘SILICON is a quite important material in the application of energy resources technology. With the development of ion-implantation technique and the increasing interest in dopping, it is very important to know the relationship between the vacacies induced by the particle irradiation damage and the annealing temperature. The positron annihilation is a very useful method for studying defects in the semiconductor, because the annihilation characteristics of trapped positron are influenced by the charge of the defects. It has been shown that the positrons can be trapped by defects created by irradi-
基金Project supported by the National Natural Science Foundation of China.
文摘A new EPR center having C2v symmetry and S=1, labeled as Si-PK3, has been observed for the first time in neutron-irradiated FZ-silicon. The spectra start to appear after 150℃ annealing and disappear at 500℃. The principal values of tensor g and D are determined. The microscopic model is proposed to be a trivacancy chain along the 〈110〉-direction with an oxygen atom situated in the middle. The annealing temperature of si-PK3 in hydrogencontaining samples is at least by 150℃ lower than that of other samples.
基金Project supported by the National Natural Science Foundation of China.
文摘1 Introduction In recent years, the irradiation defects in CZ-silicon have been studied extensively because the neutron-irradiation defects in CZ-silicon play a key role in controlling the yield and performance of VLSI circuits. However, because of the impurities (oxygen, about 10<sup>18</sup> atoms/cm<sup>3</sup>) in silicon, behavior of irradiation-defects during heat-treatment has been proved to be complicated, while slices are subjected to neutrons irradiation and heat-treatment, the irradiation defect behavior has not been clearly understood yet.
