Due to the low density and excellent mechanical proper-ties,high performance fiber reinforced materials have aconsiderable application in the area of high technologyand dally usage.In this paper,the Ultra-high Molecu-...Due to the low density and excellent mechanical proper-ties,high performance fiber reinforced materials have aconsiderable application in the area of high technologyand dally usage.In this paper,the Ultra-high Molecu-lar Weight Polyethylene(UHMWPE)fiber reinforcedPE tape prepared with the method of powder impregnat-ion was studied.The effect of impregnate length and thetensile force of the yarn on the fiber content as well as on the strength and modulus of the tape were discussed.Calculation shows that the strength and the modulus ofthe ULMWPE fiber can keep about 85％ after it undergothe process.展开更多
A series of metamorphic high electron mobility transistors （MMHEMTs） with different Ⅴ/Ⅲ flux ratios are grown on CaAs （001） substrates by molecular beam epitaxy （MBE）. The samples are analysed by using atomic ...A series of metamorphic high electron mobility transistors （MMHEMTs） with different Ⅴ/Ⅲ flux ratios are grown on CaAs （001） substrates by molecular beam epitaxy （MBE）. The samples are analysed by using atomic force microscopy （AFM）, Hall measurement, and low temperature photoluminescence （PL）. The optimum Ⅴ/Ⅲ ratio in a range from 15 to 60 for the growth of MMHEMTs is found to be around 40. At this ratio, the root mean square （RMS） roughness of the material is only 2.02 nm; a room-temperature mobility and a sheet electron density are obtained to be 10610.0cm^2/（V.s） and 3.26×10^12cm^-2 respectively. These results are equivalent to those obtained for the same structure grown on InP substrate. There are two peaks in the PL spectrum of the structure, corresponding to two sub-energy levels of the In0.53Ga0.47As quantum well. It is found that the photoluminescence intensities of the two peaks vary with the Ⅴ/Ⅲ ratio, for which the reasons are discussed.展开更多
文摘Due to the low density and excellent mechanical proper-ties,high performance fiber reinforced materials have aconsiderable application in the area of high technologyand dally usage.In this paper,the Ultra-high Molecu-lar Weight Polyethylene(UHMWPE)fiber reinforcedPE tape prepared with the method of powder impregnat-ion was studied.The effect of impregnate length and thetensile force of the yarn on the fiber content as well as on the strength and modulus of the tape were discussed.Calculation shows that the strength and the modulus ofthe ULMWPE fiber can keep about 85％ after it undergothe process.
文摘A series of metamorphic high electron mobility transistors （MMHEMTs） with different Ⅴ/Ⅲ flux ratios are grown on CaAs （001） substrates by molecular beam epitaxy （MBE）. The samples are analysed by using atomic force microscopy （AFM）, Hall measurement, and low temperature photoluminescence （PL）. The optimum Ⅴ/Ⅲ ratio in a range from 15 to 60 for the growth of MMHEMTs is found to be around 40. At this ratio, the root mean square （RMS） roughness of the material is only 2.02 nm; a room-temperature mobility and a sheet electron density are obtained to be 10610.0cm^2/（V.s） and 3.26×10^12cm^-2 respectively. These results are equivalent to those obtained for the same structure grown on InP substrate. There are two peaks in the PL spectrum of the structure, corresponding to two sub-energy levels of the In0.53Ga0.47As quantum well. It is found that the photoluminescence intensities of the two peaks vary with the Ⅴ/Ⅲ ratio, for which the reasons are discussed.
