Cubic C3N4 compound in the C-N thin films on Si and NaCl substrates was prepared by ion beam sputtering of a pure graphite target with discharge gas of pure N2. X-ray photoelectron spectroscopy indicated that nitrogen...Cubic C3N4 compound in the C-N thin films on Si and NaCl substrates was prepared by ion beam sputtering of a pure graphite target with discharge gas of pure N2. X-ray photoelectron spectroscopy indicated that nitrogen atoms combined with sp2- and sp3- coordinated C atoms in the film, respectively. X-ray diffraction, selected area electron diffraction and high-resolution electron microscopy were used to identify the cubic C3N4 phase. The results reconfirm the ab initio calculations on metastable structure in C-N compounds展开更多
CN x /SiCN composite films were prepared on titanium ( Ti ) alloy substrates by Radio Frequency Plasma Enhanced Chemical Vapor Deposition ( RF\|PECVD ). As a buffer layer, SiCN ensured the adhesion of the CN ...CN x /SiCN composite films were prepared on titanium ( Ti ) alloy substrates by Radio Frequency Plasma Enhanced Chemical Vapor Deposition ( RF\|PECVD ). As a buffer layer, SiCN ensured the adhesion of the CN x thin films on Ti substrates. X\|ray diffraction ( XRD) measurement revealed that the composite films possessed α\|C 3 N 4 structure. The microhardness of the films was 48 to 50 GPa. In order to test the characteristics of wear and corrosion resistances, we prepared Ti alloy samples with and without CN x /SiCN composite films. Also for strengthening the effect of wear and corrosion, the wear tests were carried out under high load (12 MPa) and in 0.9% NaCl solution. Results of the wear tests and the corrosive electrochemical measurements showed that the samples coated with CN x films had excellent characteristics of wear and corrosion resistances compared with Ti alloy substrate samples.展开更多
Carbon nitride films were deposited on Si (100) substrates using plasma-enhanced chemical vapor deposition (PECVD) technique from CH4 and N2 at different applied dc bias voltage. The microstructure, composition and ch...Carbon nitride films were deposited on Si (100) substrates using plasma-enhanced chemical vapor deposition (PECVD) technique from CH4 and N2 at different applied dc bias voltage. The microstructure, composition and chemical bonding of the resulting films were characterized by Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The mechanical properties such as hardness and elastic modulus of the films were evaluated using nano-indentation. As the results, the Raman spectra, showing the G and D bands, indicate the amorphous structure of the films. XPS and FTIR measurements demonstrate the existence of various carbon-nitride bonds in the films and the hydrogenation of carbon nitride phase. The composition ratio of N to C, the nano-hardness and the elastic modulus of the carbon nitride films increase with increasing dc bias voltage and reach the maximums at a dc bias voltage of 300 V, then they decrease with further increase of the dc bias voltage. Moreover, the XRD analyses indicate that the carbon nitride film contains some polycrystalline C3N4 phase embedded in the amorphous matrix at optimized deposition condition of dc bias voltage of 300 V.展开更多
Hexagonal boron carbonitrogen (h-BCN) compound is synthesized from a mixture of boron powder and CNH compound prepared by pyrolysis of melamine (CaH6N6) under high temperature (1400-1500℃) and high pressure (5...Hexagonal boron carbonitrogen (h-BCN) compound is synthesized from a mixture of boron powder and CNH compound prepared by pyrolysis of melamine (CaH6N6) under high temperature (1400-1500℃) and high pressure (5.0-5.5 GPa). X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy and Raman spec- troscopy are used to determine the chemical composition and bonds of the product. The results show that the product has composition of B0.18C0.64N0.16 (near BC4N) and atomic-level hybrid. X-ray diffraction analysis indicates that the powder has a hexagonal network structure. Scanning and transmission electron microscopy results suggest that h-BCN compound morphology is mainly flaky in width about 1 μm and thickness 200nm.展开更多
文摘Cubic C3N4 compound in the C-N thin films on Si and NaCl substrates was prepared by ion beam sputtering of a pure graphite target with discharge gas of pure N2. X-ray photoelectron spectroscopy indicated that nitrogen atoms combined with sp2- and sp3- coordinated C atoms in the film, respectively. X-ray diffraction, selected area electron diffraction and high-resolution electron microscopy were used to identify the cubic C3N4 phase. The results reconfirm the ab initio calculations on metastable structure in C-N compounds
文摘CN x /SiCN composite films were prepared on titanium ( Ti ) alloy substrates by Radio Frequency Plasma Enhanced Chemical Vapor Deposition ( RF\|PECVD ). As a buffer layer, SiCN ensured the adhesion of the CN x thin films on Ti substrates. X\|ray diffraction ( XRD) measurement revealed that the composite films possessed α\|C 3 N 4 structure. The microhardness of the films was 48 to 50 GPa. In order to test the characteristics of wear and corrosion resistances, we prepared Ti alloy samples with and without CN x /SiCN composite films. Also for strengthening the effect of wear and corrosion, the wear tests were carried out under high load (12 MPa) and in 0.9% NaCl solution. Results of the wear tests and the corrosive electrochemical measurements showed that the samples coated with CN x films had excellent characteristics of wear and corrosion resistances compared with Ti alloy substrate samples.
基金Projects(59925513 50323007) supported by the National Natural Science Foundation of China+2 种基金 project(G1999065005) supported by the National Basic Research Program of China project(2003AA305670) supported by the Hi-tech Research and Development Program of China and supported by "Top Hundred Talents Program" of Chinese Academy of Sciences
文摘Carbon nitride films were deposited on Si (100) substrates using plasma-enhanced chemical vapor deposition (PECVD) technique from CH4 and N2 at different applied dc bias voltage. The microstructure, composition and chemical bonding of the resulting films were characterized by Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The mechanical properties such as hardness and elastic modulus of the films were evaluated using nano-indentation. As the results, the Raman spectra, showing the G and D bands, indicate the amorphous structure of the films. XPS and FTIR measurements demonstrate the existence of various carbon-nitride bonds in the films and the hydrogenation of carbon nitride phase. The composition ratio of N to C, the nano-hardness and the elastic modulus of the carbon nitride films increase with increasing dc bias voltage and reach the maximums at a dc bias voltage of 300 V, then they decrease with further increase of the dc bias voltage. Moreover, the XRD analyses indicate that the carbon nitride film contains some polycrystalline C3N4 phase embedded in the amorphous matrix at optimized deposition condition of dc bias voltage of 300 V.
文摘Hexagonal boron carbonitrogen (h-BCN) compound is synthesized from a mixture of boron powder and CNH compound prepared by pyrolysis of melamine (CaH6N6) under high temperature (1400-1500℃) and high pressure (5.0-5.5 GPa). X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy and Raman spec- troscopy are used to determine the chemical composition and bonds of the product. The results show that the product has composition of B0.18C0.64N0.16 (near BC4N) and atomic-level hybrid. X-ray diffraction analysis indicates that the powder has a hexagonal network structure. Scanning and transmission electron microscopy results suggest that h-BCN compound morphology is mainly flaky in width about 1 μm and thickness 200nm.