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Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N2 and H2 carrier gas
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作者 Hai-Long Wang Xiao-Han Zhang +5 位作者 Hong-Xia Wang Bin Li Chong Chen Yong-Xian Li Zhi-Sheng Wu Hao Jiang 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第12期504-509,共6页
Indium-composition fluctuations in InGaN epitaxial layers are suppressed by using periodically-pulsed mixture(PPM)of N2and H2carrier gas. Photoluminescence, optical transmission, reciprocal space map and space-resolve... Indium-composition fluctuations in InGaN epitaxial layers are suppressed by using periodically-pulsed mixture(PPM)of N2and H2carrier gas. Photoluminescence, optical transmission, reciprocal space map and space-resolved cathodoluminescence are employed to characterize the InGaN epilayers. It is shown that the lateral In-fluctuations mainly occur as hillock-like In-rich regions. Both the number and size of In-rich regions are reduced by introducing the PPM carrier gas.Moreover, the measurements first experimentally demonstrate that the H2carrier gas has a stronger decomposition effect on the In-rich region. As the duration time of the PPM carrier gas increases, the reduction of In-content in the In-rich region reaches up to 12%, however, only 2% for the In-homogeneous region. These factors lead to the suppression of In-fluctuations. 展开更多
关键词 InGaN alloys suppression of In-fluctuations periodically-pulsed mixture of nitrogen and hydrogen
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