Molecular dynamics simulation study of nitrogen vacancy color centers prepared by carbon ion implantation into diamond

Nitrogen vacancy(NV)color centers in diamond have useful applications in quantum sensing andfluorescent marking.They can be gen-erated experimentally by ion implantation,femtosecond lasers,and chemical vapor deposition.However,there is a lack of studies of the yield of NV color centers at the atomic scale.In the molecular dynamics simulations described in this paper,NV color centers are pre-pared by ion implantation in diamond with pre-doped nitrogen and subsequent annealing.The differences between the yields of NV color centers produced by implantation of carbon(C)and nitrogen(N)ions,respectively,are investigated.It is found that C-ion implantation gives a greater yield of NV color centers and superior location accuracy.The effects of different pre-doping concentrations(400–1500 ppm)and implantation energies(1.0–3.0 keV)on the NV color center yield are analyzed,and it is shown that a pre-doping concentra-tion of 1000 ppm with 2 keV C-ion implantation can produce a 13%yield of NV color centers after 1600 K annealing for 7.4 ns.Finally,a brief comparison of the NV color center identification methods is presented,and it is found that the error rate of an analysis utiliz-ing the identify diamond structure coordination analysis method is reduced by about 7%compared with conventional identification+methods.

Effect of radiation-induced color centers absorption in optical fibers on fiber optic gyroscope for space application

The effects of color centers＇ absorption on fibers and interferometric fiber optical gyroscopes（IFOGs） are studied in the paper. The irradiation induced attenuation（RIA） spectra of three types of polarization-maintaining fibers（PMFs）, i.e.,P-doped, Ge-doped, and pure silica, irradiated at 100 Gy and 1000 Gy are measured in a wavelength range from 1100 nm to1600 nm and decomposed according to the Gaussian model. The relationship of the color centers absorption intensity with radiation dose is investigated based on a power model. Furthermore, the effects of all color centers＇ absorption on RIA and mean wavelength shifts（MWS） at 1300 nm and 1550 nm are discussed respectively. Finally, the random walk coefficient（RWC） degradation induced from RIA and the scale factor error induced by MWS of the IFOG are simulated and tested at a wavelength of 1300 nm. This research will contribute to the applications of the fibers in radiation environments.

Current sensor based on diamond nitrogen-vacancy color center

High precision current measurement is very important for the calibration of various high-precision equipment and the measurement of other precision detection fields.A new current sensor based on diamond nitrogen-vacancy(NV)color center magnetic measurement method is proposed to realize the accurate measurement of current.This new current method can greatly improve the accuracy of current measurement.Experiments show that the linearity of the current sensor based on diamond NV color center can reach up to 33 ppm,which is superior to other current sensors and solves the problem of low linearity.When the range of input current is 5-40 A,the absolute error of the calculated current is less than 51μA,and the relative error is 2.42×10^(-6) at 40 A.Combined with the research content and results of the experiment,the application of the current sensor in the field of current precision measurement is prospected.

Dependence of nitrogen vacancy color centers on nitrogen concentration in synthetic diamond

Crystallization of diamond with different nitrogen concentrations was carried out with a FeNiCo-C system at pressure of 6.5 GPa.As the nitrogen concentration in diamond increased,the color of the synthesized diamond crystals changed from colorless to yellow and finally to atrovirens(a dark green).All the Raman peaks for the obtained crystals were located at about 1330 cm^(-1)and contained only the sp^(3)hybrid diamond phase.Based on Fourier transform infrared results,the nitrogen concentration of the colorless diamond was<1 ppm and absorption peaks corresponding to nitrogen impurities were not detected.However,the C-center nitrogen concentration of the atrovirens diamond reached 1030 ppm and the value of A-center nitrogen was approximately 180 ppm with a characteristic absorption peak at 1282 cm^(-1).Furthermore,neither the NV^(0)nor the NV^(-)optical color center existed in diamond crystal with nitrogen impurities of less than 1 ppm by photoluminescence measurement.However,Ni-related centers located at 695 nm and 793.6 nm were observed in colorless diamond.The NE8 color center at 793.6 nm has more potential for application than the common NV centers.NV^(0)and NV^(-)optical color centers coexist in diamond without any additives in the synthesis system.Importantly,only the NV^(-)color center was noticed in diamond with a higher nitrogen concentration,which maximized optimization of the NV^(-)/NV^(0)ratio in the diamond structure.This study has provided a new way to prepare diamond containing only NV^(-)optical color centers.

Single‑Photon Sources Based on Novel Color Centers in Silicon Carbide P–I–N Diodes: Combining Theory and Experiment

Point defects in the crystal lattice of SiC,known as color centers,have recently emerged as one of the most promising single-photon emitters for non-classical light sources.However,the search for the best color center that satisfies all the requirements of practical applications has only just begun.Many color centers in SiC have been recently discovered but not yet identified.Therefore,it is extremely challenging to understand their optoelectronic properties and evaluate their potential for use in practical single-photon sources.Here,we present a theoretical approach that explains the experiments on single-photon electroluminescence(SPEL)of novel color centers in SiC p-i-n diodes and gives the possibility to engineer highly efficient single-photon emitting diodes based on them.Moreover,we develop a novel method of determining the electron and hole capture cross sections by the color center from experimental measurements of the SPEL rate and second-order coherence.Unlike other methods,the developed approach uses the experimental results at the single defect level that can be easily obtained as soon as a single-color center is identified in the i-type region of the SiC p-i-n diode.

A Laser-Diode-Pumped Nd:YAG Laser Q-Switched with a YAG Color Center Chip

A laser-diode-pumped Nd: YAG laser Q-switched Passively with a YAG colorcenter chip has been deveolped. The Q-switched pulse output has a duration of 25-70ns,an energy of about 7.9 μJ and a repetition frequency of 1.25-5.0kHz when the laser cavityparameters and pump power are changed. The Q-switched dynamics is analyzed with therate equation theorry. The theoretical and experimental results agree well.

Transient features of graphitization and nitrogen-vacancy color centers in a diamond fabricated by localization femtosecond laser direct writing

Femtosecond laser direct writing provides an efficient approach to fabricating single nitrogen vacancy(NV) color centers with a relatively high yield. Different from previously reported NV color centers with a random distribution in a bulk diamond or nanocrystals, this gives an opportunity to study the photophysical properties of single NV color centers with precise numbers and positions. However, ultrafast studies on single NV color centers prepared by localization femtosecond laser direct writing are still rare, especially for the graphitization inside a diamond and its relationship with single NV color centers. Here, we report the broadband transient absorption(TA) spectroscopic features of the graphitization and NV color centers in a diamond fabricated by localization femtosecond laser direct writing at room temperature under 400 nm excitation. In comparison with the graphene oxide film, the bleaching features of the graphitization point array in a diamond are similar to reduced graphene oxide,accompanied by excited state absorption signals from local carbon atom vacancy defects in graphene-like structures induced by laser writing. On the other hand, transient features of laser processing array containing single NV color centers with a yield of~50% are different from those of the graphitization point array. Our findings suggest that for ultrashort pulse processing of diamonds, broadband TA spectral signals are sensitive to the surrounding atomic environment of processing sites, which could be applied to laser writing point defects in other materials used as solid-state single photon sources.

Solid-state quantum nodes based on color centers and rare-earth ions coupled with fiber FabryePérot microcavities

High-performance optical quantum memories serving as quantum nodes are crucial for the distribution of remote entanglement and the construction of large-scale quantum networks.Notably,quantum systems based on single emitters can achieve deterministic spin–photon entanglement,which greatly simplifies the difficulty of constructing quantum network nodes.Among them,optically interfaced spins embedded in solid-state systems,as atomic-like emitters,are important candidate systems for implementing long-lived quantum memory due to their stable physical properties and robustness to decoherence in scalable and compact hardware.To enhance the strength of light-matter interactions,optical microcavities can be exploited as an important tool to generate high-quality spin–photon entanglement for scalable quantum networks.They can enhance the photon collection probability and photon generation rate of specific optical transitions and improve the coherence and spectral purity of emitted photons.For solid-state systems,open Fabry–Pérot cavities can couple single emitters that are not in proximity to the surface,avoiding significant spectral diffusion induced by the interfaces while maintaining the wide tunability,which enables addressing of multiple single emitters in the frequency and spatial domain within a single device.This review described the characteristics of single emitters as quantum memories with a comparison to atomic ensembles,the cavity-enhancement effect for single emitters and the advantages of different cavities,especially fiber Fabry–Pérot microcavities.Finally,recent experimental progress on solid-state single emitters coupled with fiber Fabry–Pérot microcavities was also reviewed,with a focus on color centers in diamond and silicon carbide,as well as rare-earth dopants.

Color center and radiation center in Lu_2SiO_5:Ce crystal

Radiation damage of Lu2SiO5：Ce （LSO：Ce） crystals was investigated through intense UV light. An absorption band at 435 nm was observed in the transmission spectrum of the damaged LSO：Ce crystal, similar to that of absorption band caused by gamma ray irradiation. GDMS analysis for LSO：Ce crystals revealed the existence of impurities, such as Yb in the crystals. The impurities might be responsible for the optical absorption of the color center and the radiation center.

Single-channel vector magnetic information detection method based on diamond NV color center

A method of detecting the single channel triaxial magnetic field information based on diamond nitrogen-vacancy(NV)color center is introduced.Firstly,the incident angle of the bias magnetic field which can achieve the equal frequency difference optically-detected magnetic resonance(ODMR)spectrum of diamond NV color center is calculated theoretically,and the triaxial magnetic information solution model is also constructed.Secondly,the microwave time-controlled circuit module is designed to generate equal timing and equal frequency difference microwave pulse signals in one channel.Combining with the optical detection magnetic resonance technology,the purpose of sequentially locking and detecting the four formant signals on one side of the diamond NV color center(m_(s)=-1 state signal)is achieved,and the vector magnetic field information detection is accomplished by combining the triaxial magnetic information solution model.The system can obtain magnetic field detection in a range of 0 mT-0.82 mT.The system's magnetic noise sensitivity is 14.2 nT/Hz^(1/2),and the deviation angle errors of magnetic field detectionθ_(x) andθ_(y) are 1.3° and 8.2° respectively.

Non-destructive Testing Method for Crack Based on Diamond Nitrogen-vacancy Color Center

Magnetic field measurement plays an extremely important role in material science,electronic en-gineering,power system and even industrial fields.In particular,magnetic field measurement provides a safe and reliable tool for industrial non-destructive testing.The sensitivity of magnetic field measurement deter-mines the highest level of detection.The diamond nitrogen-vacancy(NV)color center is a new type of quan-tum sensor developed in recent years.The external magnetic field will cause Zeeman splitting of the ground state energy level of the diamond NV color center.Optical detection magnetic resonance(ODMR),using a mi-crowave source and a lock-in amplifier to detect the resonant frequency of the NV color center,and finally the change of the resonant frequency can accurately calculate the size of the external magnetic field and the sensi-tivity of the external magnetic field change.In the experiment,a diamond containing a high concentration of NV color centers is coupled with an optical fiber to realize the preparation of a magnetic field scanning probe.Then,the surface cracks of the magnetized iron plate weld are scanned,and the scanning results are drawn into a two-dimensional magnetic force distribution map,according to the magnetic field gradient change of the magnetic force distribution map,the position and size of the crack can be judged very accurately,which pro-vides a very effective diagnostic tool for industrial safety.

RFPRODUCTION OF HIGH DENSITY F_(2)^(+) CENTERS IN UNDOPED AND DOPED SODIUM FLUOWE CRYSTALS

F_(2) centers in colored undoped and doped NaF crystals can be converted nearly completely into F_(2)^(+) centers with the high density of more than 10^(17)cm^(-3) by irradiating the crystals with a 505nm laser at room temperature.A process of conversion from F_(2)^(+) to (F_(2)^(+))^(*) centers in the NaF crystals doped with divalent metal ions such as Mn^(++),Mg^(++) and Ni^(++) after the 505nm laser irradiation was observed in our experiments.

GeV重离子束辐照LiF引起的晶体内部结构改变

高能强流重离子束入射到固体物质中,沿飞行路径的离子能量沉积密度将改变宏观靶物质的温度和压强等,并可能在高压高密条件下产生新的材料缺陷.本文利用兰州重离子加速器装置HIRFL-CSR引出的能量为264 MeV/u的Xe^(36+)离子束,入射到LiF晶体靶物质中,在线测量了LiF的发射光谱,观测到沿离子路径的晶体颜色变化.通过解离方法取得了不同位置处的X射线衍射(X-ray Diffraction)与X射线光电子能谱结果,显示在Xe离子的布拉格峰区域出现了LiF_(3)(LiF+F_(2))结构相,讨论了新的结构缺陷的产生与重离子束能量沉积密度间可能的相关性.这为离子束驱动的高能量密度物理的能量沉积过程提供了一定参考.

金刚石色心调控及光学谐振器的研究进展

金刚石因其优异的光学特性和色心发射器而被应用于光子器件领域。光学谐振器是一种微纳米光学结构,基于有限模体积内的光-物质相互作用增强,能够将金刚石色心的发射与谐振器的增强效应相结合,有选择性地增强色心的发射,用于在光子电路中提供稳定且强度充足的光学信号。近年来,金刚石微纳加工技术的发展推动了金刚石光学谐振器的研究和应用。本文总结了金刚石光学谐振器的研究现状,概述了金刚石的基本性质、合成与加工方法,介绍了金刚石色心的生成以及其与光学谐振器的耦合原理,梳理了三种不同类型的金刚石光学谐振器的研究进展,并对未来金刚石光学谐振器的发展进行了展望。

快速响应的NV色心微波传感器实现及测量

高精度微波快速测量技术是电磁频谱分析监测的核心,微波测量技术为微波传感器的高精度测量提供了可能。通过建立NV色心空间磁场能级响应频率精密调谐模型,结合NV色心光学宽场成像技术,实现了高精度、响应快可调的微波测量。首先,通过连续光探测磁共振(ODMR)技术,结合宽场成像技术,通过像素级磁场强度-微波频率转化关系,实现宽场成像的微波测量;进而将连续扫频技术转变为施加定频进行检测,通过同步监测频点不同的响应特性,验证了测试结果的有效性。以上结果为高精度固态量子频谱分析仪、高瞬时带宽频谱微波传感器提供了重要技术基础。

高温高压非金属元素掺杂金刚石的研究进展

金刚石因其优越的极限特性,使得其应用领域非常广泛。金刚石的功能特性往往由其内部所含杂质元素决定,包括非金属元素如硼(B)、氮(N)、硫(S)和磷(P)等。掺杂这些单元素以合成金刚石一直是国内外研究课题的热点。本文首先介绍了金刚石单晶在高温高压条件下的合成方法及其研究发展现状,随后分析了硼(B)、氮(N)、硫(S)、磷(P)等单元素掺杂对金刚石晶体生长和电学等性能的影响。同时对金刚石在半导体中的应用以及金刚石中的含氮色心进行了分析。最后展望了掺杂后金刚石的光学和电学性能研究前景,并指出进一步探索多元素共掺杂的理论和实验方法对提升掺杂金刚石的性能具有重要意义。

9S管理结合色系管理在消毒供应中心外来医疗器械管理中的应用

目的探讨9S管理结合色系管理在消毒供应中心外来医疗器械管理中的应用效果。方法选取2022年7月至2023年6月医院的1000个骨科手术外来医疗器械包作为研究对象。将2022年7—12月的500个外来医疗器械包作为对照组,采用传统色系管理;将2023年1—6月的500个外来医疗器械包作为观察组,采用9S管理结合色系管理。比较两组未按时送洗、反洗、湿包、指示卡漏放发生率,器械装载耗时、包装整理耗时、无菌发放耗时,以及9S管理结合色系管理实施前后护理人员对器械及植入物的认知、器械整理与封包技能考核成绩。结果观察组未按时送洗、反洗、湿包、指示卡漏放发生率低于对照组,差异有统计学意义(P<0.05);观察组器械装载耗时、包装整理耗时、无菌发放耗时均短于对照组,差异有统计学意义(P<0.05)。实施9S管理结合色系管理后,护理人员对器械及植入物的认知、器械整理与封包技能考核成绩均高于实施前,差异有统计学意义(P<0.05)。结论实施9S管理结合色系管理后,消毒供应中心外来医疗器械的接收、清点、打包、发放流程更加标准化、规范化、科学化。

DLC膜对金刚石纳米柱NV色心发光收集强度的影响

金刚石氮空位(NV)色心发光收集强度的提高是实现单光子源技术的关键。本工作将锥状的类金刚石(DLC)梯度减反膜引入纳米柱色心单光子源中,旨在从色心的自发辐射速率与光子收集效率两方面提高NV色心的发光收集强度。采用时域有限差分(FDTD)法对带有DLC膜的金刚石纳米柱复合结构进行了光学仿真,探究了不同结构参数的DLC薄膜对金刚石纳米柱NV色心光子收集强度、出射效率及自发辐射速率的影响,并且通过优化得到了最大收集强度下的结构参数。仿真结果表明,引入DLC膜能够使金刚石纳米柱中NV色心获得更高的光子出射效率(≥1%),并且能够改变纳米柱内部电场分布,使色心自发辐射速率增加16.8%,最终使光子的总收集强度增加15.5%。

Silicon Vacancy Color Centers in 6H-SiC Fabricated by Femtosecond Laser Direct Writing

As a single photon source,silicon vacancy(V_(Si))centers in wide bandgap semiconductor silicon carbide(SiC)are expected to be used in quantum technology as spin qubits to participate in quantum sensing and quantum computing.Simultaneously,the new direct femtosecond(fs)laser writing technology has been successfully applied to preparing V_(Si)s in SiC.In this study,6H-SiC,which has been less studied,was used as the processed material.V_(Si) center arrays were formed on the 6H-SiC surface using a 1030-nm-wavelength fs pulsed laser.The surface was characterized by white light microscopy,atomic force microscopy,and confocal photoluminescence(PL)/Raman spectrometry.The effect of fs laser energy,vector polarization,pulse number,and repetition rate on 6H-SiC V_(Si) defect preparation was analyzed by measuring the V_(Si) PL signal at 785-nm laser excitation.The results show that fs laser energy and pulse number greatly influence the preparation of the color center,which plays a key role in optimizing the yield of V_(Si)s prepared by fs laser nanomachining.

基于复合纳米振子系统的光学质量传感

提出了一种基于金刚石氮-空位(NV)色心-悬臂梁复合纳米机械振子系统,该系统将金刚石NV色心镶嵌在悬臂梁底部,再通过悬臂梁振动形变产生的应力与金刚石NV色心中的自旋电子相互作用实现耦合;进而利用光学泵浦-探测技术研究了该系统的相干光学特性。首先,基于该复合系统的探测吸收谱,提出了一种测量纳米机械振子频率的全光学方案,在红边带的条件下,可通过观测吸收谱中两尖峰的分裂宽度从而确定自旋与纳米机械振子的耦合强度。其次,由于金刚石NV中心电子自旋具有较长的相干时间,因此进一步基于该复合系统提出了一种室温下全光学质量传感方案。