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Effect of Annealing Temperature on GMR of [NiFeCo(10 nm)/Ag(10 nm)]×20 Multilayer Film 被引量:1
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作者 Yuding HE, Shejun HU, Jian LI and Guangrong XIECollege of Material and Energy, Guangdong University of Technology, Guangzhou 510643, China 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2004年第2期179-181,共3页
The composition, phase structure, and microstructure of the discontinuous multilayer films [NiFeCo(10 nm)/ Ag(10 nm)]×20 annealed at temperature 280, 320, 360 and 400℃, respectively were investigated. GMR (giant... The composition, phase structure, and microstructure of the discontinuous multilayer films [NiFeCo(10 nm)/ Ag(10 nm)]×20 annealed at temperature 280, 320, 360 and 400℃, respectively were investigated. GMR (giant magnetore-sistance) ratios of the multilayer films were measured at different temperatures. The results showed that FeNi3 precipitated at 360℃ and dissolved at 400℃. The films annealed at 360℃ for 1 h exhibited the highest GMR ratio 11% when saturation field was equal to 79.6 kA/m. 展开更多
关键词 Multilayer film ANNEALING GMR [NiFeCo(10 nm)/ag(10 nm)]×20
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Effect of Co Ion Implantation on GMR of [NiFeCo(10 nm)/Ag(10 nm)]×20 Multilayer Film
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作者 Yuding HE Shejun HU +1 位作者 Jian LI Guangrong XIE 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2005年第4期593-598,共6页
The composition, phase structure and microstructure of the discontinuous multilayer film[NiFeCo(10 nm)/Ag(10 nm)]×20 were investigated after Co ion implantation and annealing at 280, 320,360 and 400℃, respec... The composition, phase structure and microstructure of the discontinuous multilayer film[NiFeCo(10 nm)/Ag(10 nm)]×20 were investigated after Co ion implantation and annealing at 280, 320,360 and 400℃, respectively.GMR (giant magnetoresistance) ratio of the film with/without Co ion implantation was measured. The results showed that Co ion implantation decreased the granule size of the annealed multilayer film, and increased Hc value and GMR ratio of the multilayer film. After annealing at 360℃, the multilayer film [NiFeCo(10 nm)/Ag(10 nm)]×20 with/without Co ion implantation both exhibited the highest GMR ratio of 12.4%/11% under 79.6 kA/m of applied saturation magnetic field. 展开更多
关键词 Co ion implantation Giant magnetoresistance (GMR) [NiFeCo(10 nm)/ag10 nm)]×20 multilayer film
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