Effect of Co Ion Implantation on GMR of [NiFeCo(10 nm)/Ag(10 nm)]×20 Multilayer Film

The composition, phase structure and microstructure of the discontinuous multilayer film[NiFeCo（10 nm）/Ag（10 nm）]×20 were investigated after Co ion implantation and annealing at 280, 320,360 and 400℃, respectively.GMR （giant magnetoresistance） ratio of the film with/without Co ion implantation was measured. The results showed that Co ion implantation decreased the granule size of the annealed multilayer film, and increased Hc value and GMR ratio of the multilayer film. After annealing at 360℃, the multilayer film [NiFeCo（10 nm）/Ag（10 nm）]×20 with/without Co ion implantation both exhibited the highest GMR ratio of 12.4%/11% under 79.6 kA/m of applied saturation magnetic field.

Effect of Annealing Temperature on GMR of [NiFeCo(10 nm)/Ag(10 nm)]×20 Multilayer Film

The composition, phase structure, and microstructure of the discontinuous multilayer films [NiFeCo(10 nm)/ Ag(10 nm)]×20 annealed at temperature 280, 320, 360 and 400℃, respectively were investigated. GMR (giant magnetore-sistance) ratios of the multilayer films were measured at different temperatures. The results showed that FeNi3 precipitated at 360℃ and dissolved at 400℃. The films annealed at 360℃ for 1 h exhibited the highest GMR ratio 11% when saturation field was equal to 79.6 kA/m.

Structure design and film process optimization for metal-gate stress in 20 nm nMOS devices

The optimizations to metal gate structure and film process were extensively investigated for great metalgate stress（MGS） in 20 nm high-k/metal-gate-last（HKVMG-last） nMOS devices.The characteristics of advanced MGS technologies on device performances were studied through a process and device simulation by TCAD tools. The metal gate electrode with different stress values（0 to—6 GPa） was implemented in the device simulation along with other traditional process-induced-strain（PIS） technologies like e-SiC and nitride capping layer.The MGS demonstrated a great enhancing effect on channel carriers transporting in the device as device pitch scaling down.In addition,the novel structure for a tilted gate electrode was proposed and relationships between the tilt angle and channel stress were investigated.Also with a new method of fully stressed replacement metal gate（FSRMG） and using plane-shape-HfO to substitute U-shape-HfO,the effect of MGS was improved.For greater film stress in the metal gate,the process conditions for physical vapor deposition（PVD） TiN-x- were optimized.The maximum compressive stress of—6.5 GPa TiN_x was achieved with thinner film and greater RF power as well as about 6 sccm N ratio.

HPLC测定金鸡菊中金鸡菊查尔酮含量

目的建立高效液相色谱法测定金鸡菊中金鸡菊查尔酮含量的方法。方法采用Inertsil ODS-3 C18柱(4.6 mm×250 mm,5μm),以乙腈-1%冰醋酸(80∶20)为流动相,流速1.0 mL/min,检测波长378 nm。结果金鸡菊查尔酮在0.4～4.0μg范围内与峰面积呈良好线性关系,回归方程为Y=31 213X-149 303(r=0.999 9),平均回收率为99.21%,RSD=1.70%(n=5)。结论本方法简便、准确、重复性好,可用于金鸡菊的质量控制。