Principles of design are described for the low frequency integrated operationalamplifler XD1531 with low noise. The procedures of design of both the circuit structure and the tran-sistor shape are considered. The firs...Principles of design are described for the low frequency integrated operationalamplifler XD1531 with low noise. The procedures of design of both the circuit structure and the tran-sistor shape are considered. The first stage of the circuit is designed with the methods of low noise atlow frequencies. The measures which decrease noises, especially, the 1/f noise originating .from thesemiconductor surface state and defects, are used for the transistor structure design. With analysisand comparison to products here and abroad in characteristics, it is shown that XD1531 has a lowernoise index at low frequencies than others, and the effectiveness of design methods for bringing lownoises have been demonstrated.展开更多
A novel Ku-band low noise amplifier with a high electron mobility transistor (HEMT)and a GaAs monolithic microwave integrated circuit (MMIC) has been demonstrated. Its noisefigure is less-than 1.9dB with an associated...A novel Ku-band low noise amplifier with a high electron mobility transistor (HEMT)and a GaAs monolithic microwave integrated circuit (MMIC) has been demonstrated. Its noisefigure is less-than 1.9dB with an associated gain larger than 27dB and an input/output VSWRless than 1.4 in the frequency range of 11.7-12.2GHz. The HEMT and the microwave series in-ductance feedback technique are used in the first stage of the amplifier, and a Ku-band MMIC isemployed in the last stage. The key to this design is to achieve an optimum noise match and a min-imum input VSWR matching simultaneously by using the microwave series inductance feedbackmethod. The B J-120 waveguides are used in both input and output of the amplifier.展开更多
This paper presented an idea for the average brightness temperature of lossless antenna aperture, gave its expression for matched and dismatched noise source. This expression showed that the average brightness tempera...This paper presented an idea for the average brightness temperature of lossless antenna aperture, gave its expression for matched and dismatched noise source. This expression showed that the average brightness temperature of antenna aperture related with three factors: the noise temperature of noise source, the reflection coefficient of noise source, and the aperture efficiency.展开更多
Electrostatic discharge （ESD） induced parasitic effects have serious impacts on performance of radio frequency （RF） integrated circuits （IC）. This paper discusses a comprehensive noise analysis procedure for ESD...Electrostatic discharge （ESD） induced parasitic effects have serious impacts on performance of radio frequency （RF） integrated circuits （IC）. This paper discusses a comprehensive noise analysis procedure for ESD protection structures and their negative influences on RF ICs. Noise figures （NFs） of commonly used ESD protection structures and their impacts on a single-chip 5.5 GHz low-noise amplifier （LNA） circuit were depicted. A design example in 0.18 μm SiGe BiCMOS was presented. Measurement results confirm that significant noise degradation occurs in the LNA circuit due to ESD-induced noise effects. A practical design procedure for ESD-protected RF ICs is provided for real-world RF IC optimization.展开更多
A new circuit model for designing and manufacturing an S-band low noise amplifier(LNA) with the software,Advanced Design System(ADS),is introduced in this paper.The proposed model involves shunted impedance at the gri...A new circuit model for designing and manufacturing an S-band low noise amplifier(LNA) with the software,Advanced Design System(ADS),is introduced in this paper.The proposed model involves shunted impedance at the grid to achieve a stable LNA without measuring the S-parameters of transistors at low temperatures.The LNA was measured over the operation band of 2.2-2.3 GHz,which has input and output standing wave ratios below 1.2.The noise figure of the manufactured LNA was about 0.2 dB and the gain was above 22 dB,which indicated that our LNA worked well at 77 K.展开更多
该文设计和制作了一款单片集成硅锗异质结双极晶体管(SiGe HBT)低噪声放大器(LNA)。由于放大器采用复合型电阻负反馈结构,所以可灵活调整不同反馈电阻,同时获得合适的偏置、良好的端口匹配和低的噪声系数。基于0.35μm Si CMOS平面工艺...该文设计和制作了一款单片集成硅锗异质结双极晶体管(SiGe HBT)低噪声放大器(LNA)。由于放大器采用复合型电阻负反馈结构,所以可灵活调整不同反馈电阻,同时获得合适的偏置、良好的端口匹配和低的噪声系数。基于0.35μm Si CMOS平面工艺制定了放大器单芯片集成的工艺流程。为了进一步降低放大器的噪声系数,在制作放大器中SiGe器件时,采用钛硅合金(TiSi2)来减小晶体管基极电阻。由于没有使用占片面积大的螺旋电感,最终研制出的SiGe HBT LNA芯片面积仅为0.282mm2。测试结果表明,在工作频带0.2-1.2GHz内,LNA噪声系数低至2.5dB,增益高达26.7dB,输入输出端口反射系数分别小于-7.4dB和-10dB。展开更多
文摘Principles of design are described for the low frequency integrated operationalamplifler XD1531 with low noise. The procedures of design of both the circuit structure and the tran-sistor shape are considered. The first stage of the circuit is designed with the methods of low noise atlow frequencies. The measures which decrease noises, especially, the 1/f noise originating .from thesemiconductor surface state and defects, are used for the transistor structure design. With analysisand comparison to products here and abroad in characteristics, it is shown that XD1531 has a lowernoise index at low frequencies than others, and the effectiveness of design methods for bringing lownoises have been demonstrated.
文摘A novel Ku-band low noise amplifier with a high electron mobility transistor (HEMT)and a GaAs monolithic microwave integrated circuit (MMIC) has been demonstrated. Its noisefigure is less-than 1.9dB with an associated gain larger than 27dB and an input/output VSWRless than 1.4 in the frequency range of 11.7-12.2GHz. The HEMT and the microwave series in-ductance feedback technique are used in the first stage of the amplifier, and a Ku-band MMIC isemployed in the last stage. The key to this design is to achieve an optimum noise match and a min-imum input VSWR matching simultaneously by using the microwave series inductance feedbackmethod. The B J-120 waveguides are used in both input and output of the amplifier.
文摘This paper presented an idea for the average brightness temperature of lossless antenna aperture, gave its expression for matched and dismatched noise source. This expression showed that the average brightness temperature of antenna aperture related with three factors: the noise temperature of noise source, the reflection coefficient of noise source, and the aperture efficiency.
文摘Electrostatic discharge （ESD） induced parasitic effects have serious impacts on performance of radio frequency （RF） integrated circuits （IC）. This paper discusses a comprehensive noise analysis procedure for ESD protection structures and their negative influences on RF ICs. Noise figures （NFs） of commonly used ESD protection structures and their impacts on a single-chip 5.5 GHz low-noise amplifier （LNA） circuit were depicted. A design example in 0.18 μm SiGe BiCMOS was presented. Measurement results confirm that significant noise degradation occurs in the LNA circuit due to ESD-induced noise effects. A practical design procedure for ESD-protected RF ICs is provided for real-world RF IC optimization.
基金supported by the Specialized Research Fund for Doctoral Program of Higher Education in China(200800551009)the National High Technology Research and Development Program of China(2009AA03Z208)
文摘A new circuit model for designing and manufacturing an S-band low noise amplifier(LNA) with the software,Advanced Design System(ADS),is introduced in this paper.The proposed model involves shunted impedance at the grid to achieve a stable LNA without measuring the S-parameters of transistors at low temperatures.The LNA was measured over the operation band of 2.2-2.3 GHz,which has input and output standing wave ratios below 1.2.The noise figure of the manufactured LNA was about 0.2 dB and the gain was above 22 dB,which indicated that our LNA worked well at 77 K.
