It has recently been demonstrated that various topological states, including Dirac, Weyl, nodal-line, and triplepoint semimetal phases, can emerge in antiferromagnetic(AFM) half-Heusler compounds. However, how to dete...It has recently been demonstrated that various topological states, including Dirac, Weyl, nodal-line, and triplepoint semimetal phases, can emerge in antiferromagnetic(AFM) half-Heusler compounds. However, how to determine the AFM structure and to distinguish different topological phases from transport behaviors remains unknown. We show that, due to the presence of combined time-reversal and fractional translation symmetry, the recently proposed second-order nonlinear Hall effect can be used to characterize different topological phases with various AFM configurations. Guided by the symmetry analysis, we obtain expressions of the Berry curvature dipole for different AFM configurations. Based on the effective model, we explicitly calculate the Berry curvature dipole, which is found to be vanishingly small for the triple-point semimetal phase, and large in the Weyl semimetal phase. Our results not only put forward an effective method for the identification of magnetic orders and topological phases in AFM half-Heusler materials, but also suggest these materials as a versatile platform for engineering the nonlinear Hall effect.展开更多
The two-dimensional(2D)ferromagnetic materials and the related van der Waals homostructures have attracted considerable interest,while the 2D antiferromagnetic material has not yet been reported.Based on first-princip...The two-dimensional(2D)ferromagnetic materials and the related van der Waals homostructures have attracted considerable interest,while the 2D antiferromagnetic material has not yet been reported.Based on first-principles calculations,we investigate both electronic structures and magnetic orderings of bulk and monolayer of chromium diiodides(CrI2).We demonstrate a counter-intuitive fact that the ground state of the free-standing monolayer of CrI2 is antiferromagnetic though the bulk possesses macroscopic ferromagnetic ordering.The interlayer interaction remains antiferromagnetic up to few-layer scenarios.The unique feature of CrI2 makes it an ideal workbench to investigate the relation between magnetic couplings and interlayer van der Waals interactions,and may offer an opportunity to 2D antiferromagnetic spintronic devices.展开更多
Recently,Chern insulators in an antiferromagnetic(AFM)phase have been suggested theoretically and predicted in a few materials.However,the experimental observation of two-dimensional(2D)AFM quantum anomalous Hall effe...Recently,Chern insulators in an antiferromagnetic(AFM)phase have been suggested theoretically and predicted in a few materials.However,the experimental observation of two-dimensional(2D)AFM quantum anomalous Hall effect is still a challenge to date.In this work,we propose that an AFM Chern insulator can be realized in a 2D monolayer of NiOsCl_(6)modulated by a compressive strain.Strain modulation is accessible experimentally and used widely in predicting and tuning topological nontrivial phases.With first-principles calculations,we have investigated the structural,magnetic,and electronic properties of NiOsCl_(6).Its stability has been confirmed through molecular dynamical simulations,elasticity constant,and phonon spectrum.It has a collinear AFM order,with opposite magnetic moments of 1.3μBon each Ni/Os atom,respectively,and the Neel temperature is estimated to be 93 K.In the absence of strain,it functions as an AFM insulator with a direct gap with spin-orbital coupling included.Compressive strain will induce a transition from a normal insulator to a Chern insulator characterized by a Chern number C=1,with a band gap of about 30 meV.This transition is accompanied by a structural distortion.Remarkably,the Chern insulator phase persists within the 3%-10%compressive strain range,offering an alternative platform for the utilization of AFM materials in spintronic devices.展开更多
Out-of-plane weak ferromagnetic(OWFM)spin arrangements with topological properties can realize a series of interesting physical properties.However,this spin structure tends to exist at low temperatures.The OWFM struct...Out-of-plane weak ferromagnetic(OWFM)spin arrangements with topological properties can realize a series of interesting physical properties.However,this spin structure tends to exist at low temperatures.The OWFM structure can also be induced at room temperature by hydrostatic pressure,whereas this isotropic approach tends to form helical AFM structures.We report the OWFM spin arrangement in single crystal Mn_(3)Sn by an anisotropic strategy of high-stressconstrained compression deformation at room temperature.Both experimental and theoretical simulation results show that the alignment of the OWFM spin structure is due to the distortion of the atomic scale caused by the strain energy during deformation.The OWFM spin arrangement can significantly change the magnetic property of Mn_(3)Sn.As a result,the remanent magnetization M_(r)for the deformed sample(0.056μ_(B)/f.u.)is about eleven times that for the pre-deformed sample(0.005μ_(B)/f.u.),and the coercivity(H_(c))increases from 0 k Oe(pre-deformed sample)to 6.02 k Oe(deformed sample).Our findings provide a way to generate the OWFM spin structure at room temperature and may give fresh ideas for creating antiferromagnetic materials with excellent physical properties.展开更多
Topological magnetotransport in non-collinear antiferromagnets has attracted extensive attention due to the exotic phenomena such as large anomalous Hall effect(AHE),magnetic spin Hall effect,and chiral anomaly.The ma...Topological magnetotransport in non-collinear antiferromagnets has attracted extensive attention due to the exotic phenomena such as large anomalous Hall effect(AHE),magnetic spin Hall effect,and chiral anomaly.The materials exhibiting topological antiferromagnetic physics are typically limited in special Mn_3X family such as Mn_3Sn and Mn_3Ge.Exploring the topological magnetotransport in common antiferromagnetic materials widely used in spintronics will not only enrich the platforms for investigating the non-collinear antiferromagnetic physics,but also have great importance for driving the nontrivial topological properties towards practical applications.Here,we report remarkable AHE,anisotropic and negative parallel magnetoresistance in the magnetron-sputtered Ir_(20)Mn_(80)antiferromagnet,which is one of the most widely used antiferromagnetic materials in industrial spintronics.The ab initio calculations suggest that the Ir_4Mn_(16)(IrMn_4)or Mn_3Ir nanocrystals hold nontrivial electronic band structures,which may contribute to the observed intriguing magnetotransport properties in the Ir_(20)Mn_(80).Further,we demonstrate the spin–orbit torque switching of the antiferromagnetic Ir_(20)Mn_(80)by the spin Hall current of Pt.The presented results highlight a great potential of the magnetron-sputtered Ir_(20)Mn_(80)film for exploring the topological antiferromagnet-based physics and spintronics applications.展开更多
Magnetic materials with non-collinear spin orderings provide an outstanding platform to probe spin-tronic phenomena owing to their strong spin-orbit coupling(SOC)and unique Berry phase.It is thus important to obtain a...Magnetic materials with non-collinear spin orderings provide an outstanding platform to probe spin-tronic phenomena owing to their strong spin-orbit coupling(SOC)and unique Berry phase.It is thus important to obtain a non-collinear antiferromagnetic(AFM)phase at room temperature(RT).Signifi-cantly,the discovery of novel materials with nearly zero thermal expansion(ZTE)property near RT is required and pursued for avoiding thermal stress and fracture in spintronic devices.Herein,the doping of Sn(Ge)at the Ag site in the triangular lattice Mn_(3)Ag_(1-x)Sn(Ge)_(x)N compounds increases effectively the Neel point and makes the interesting non-collinearГ^(5g)AFM phase exist above RT.The magnetic phase diagrams withГ^(5g)phase up to 498 K were built by the combined analysis of neutron powder diffraction(NPD),magnetic measurements,electronic transport,and differential scanning calorimetry(DSC).The thermal expansion behaviors of Mn_(3)Ag_(1-x)Sn(Ge)_(x)N were modulated,and the nearly ZTE above RT was achieved in Mn_(3)Ag_(0.5)Ge_(0.5)N withinГ^(5g)AFM ordering.Our findings offer an effective way to tailor the non-collinear AFM ordering and correlated thermal expansion behavior for potential use in the emerging field of thermal stress-free magnetic chip materials.展开更多
By inserting an ultrathin Pt layer at Co/Ru interface,we established antiferromagnetic coupling with outof-plane magnetization in Co/Ru/Co film stacks fabricated by sputtering.To achieve configuration suitable for fre...By inserting an ultrathin Pt layer at Co/Ru interface,we established antiferromagnetic coupling with outof-plane magnetization in Co/Ru/Co film stacks fabricated by sputtering.To achieve configuration suitable for free layer,the magnetic properties of the stacks have been investigated by changing the thickness of Co,Ru and Pt layers using an orthogonal wedges technique.It is found that magnetic properties for upper Co layer thinner than 0.5 nm are sensitive to little change in Ru thickness.Improving continuity of upper Co layer by slightly increasing the thickness can effectively increase the squareness of minor loop.The switching magnetization of synthetic antiferromagnetic（SAF） structure is achieved by DC current under an in-plane static magnetic field of ± 500 Oe.This structure is very promising for free layer in spintronic application.展开更多
Single crystals of 4SC（NH2）2–Ni1-xCux Cl2（x = 0.03）（Cu-DTN） containing spin S = 1/2 Cu^2＋and S = 1 Ni^2＋cations are synthesized by slow evaporation methods. Structural characterization demonstrates that the C...Single crystals of 4SC（NH2）2–Ni1-xCux Cl2（x = 0.03）（Cu-DTN） containing spin S = 1/2 Cu^2＋and S = 1 Ni^2＋cations are synthesized by slow evaporation methods. Structural characterization demonstrates that the Cu-DTN is of a tetrahedral structure with lattice parameter c being 9.0995 A, which is 1.32% expansion compared with that of parent material DTN due to the larger radius of the Cu ion. Direct current（DC） susceptibility measurements show that both the antiferromagnetic exchange interaction at low temperature and the large anisotropy of susceptibilities are suppressed after doping the Cu ion, which could be related to the structural distortion and the increase of the super-exchange paths in Cu-DTN.展开更多
Monodisperse NiO nanocrystals with an average particle size of 3 -h 0.4 nm are successfully synthesized by the thermal decomposition of Ni-oleylamine complex in an organic solvent under a continuous 02 flux. The cryst...Monodisperse NiO nanocrystals with an average particle size of 3 -h 0.4 nm are successfully synthesized by the thermal decomposition of Ni-oleylamine complex in an organic solvent under a continuous 02 flux. The crystalline structure and the morphology of the product are investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and transmission electron microscopy. Magnetization and alternating-current （ac） susceptibility measurements indicate that the structure of the particles can be considered as consisting of an antiferromagnetieally ordered core and a spin- glass-like surface shell. In addition, both the exchange bias field and the vertical magnetization shift can be observed in this system at 10 K after field cooling. This observed exchange bias effect is explained in terms of the exchange interaction between the antiferromagnetie core and the spin-glass-like shell.展开更多
A novel two-dimensional layered FeⅢ formate, Fe(HCO2)2ClH2O, has been synthesized by solvothermal reaction. The structure of complex is characterized by single-crystal X-ray diffraction. The complex crystallizes in t...A novel two-dimensional layered FeⅢ formate, Fe(HCO2)2ClH2O, has been synthesized by solvothermal reaction. The structure of complex is characterized by single-crystal X-ray diffraction. The complex crystallizes in tetragonal space group P4/nmm with a = 5.9588(6), c = 8.3831(17) ?, V = 297.66(7) ?3, Z = 2, F(000) = 198, Dc = 2.224 g/cm3, Mr = 199.35, μ = 2.927 mm-1, the final R = 0.0231 and w R = 0.0585(I > 2σ(I)) for all data. Single-crystal structure analysis indicates that the complex has a 2D metal formate structure with only formate anions as bridges. The anti-anti formats link the FeⅢ ions to form a(4, 4) net, while the chlorine ions and water molecules coordinate to FeⅢ on both sides of the layer. Magnetic study have shown that an antiferromagnetic interactions between the FeⅢ ions in the complex. And a field induced spin-flop was detected at low temperature.展开更多
Exploring the half-metallic nanostructures with large band gap and high carrier mobility is a crucial solution for developing high-performance spintronic devices.The electric and magnetic properties of monolayer zigza...Exploring the half-metallic nanostructures with large band gap and high carrier mobility is a crucial solution for developing high-performance spintronic devices.The electric and magnetic properties of monolayer zigzag black-phosphorene nanoribbons(ZBPNRs)with various widths are analyzed by means of the first-principles calculations.Our results show that the magnetic ground state is dependent on the width of the nanoribbons.The ground state of narrow nanoribbons smaller than 8ZBPNRs prefers ferromagnetic order in the same edge but antiferromagnetic order between two opposite edges.In addition,we also calculate the electronic band dispersion,density of states and charge density difference of 8ZBPNRs under the action of out-of-plane electric field.More interesting,the addition of out-of-plane field can modulate antiferromagnetic semiconductor to the half metal by splitting the antiferromagnetic degeneracy.Our results propose a new approach to realize half-metal in phosphorene,which overcomes the drawbacks of graphene/silicene with negligible band gap as well as the transitional metal sulfide(TMS)with low carrier mobility.展开更多
基金Supported by the National Natural Science Foundation of China (Grant Nos.11834006,12074181,and 11674165)the Natural Science Foundation of Jiangsu Province (Grant No.BK20200007)+1 种基金the Fok Ying-Tong Education Foundation of China (Grant No.161006)the Fundamental Research Funds for the Central Universities (Grant No.020414380149)。
文摘It has recently been demonstrated that various topological states, including Dirac, Weyl, nodal-line, and triplepoint semimetal phases, can emerge in antiferromagnetic(AFM) half-Heusler compounds. However, how to determine the AFM structure and to distinguish different topological phases from transport behaviors remains unknown. We show that, due to the presence of combined time-reversal and fractional translation symmetry, the recently proposed second-order nonlinear Hall effect can be used to characterize different topological phases with various AFM configurations. Guided by the symmetry analysis, we obtain expressions of the Berry curvature dipole for different AFM configurations. Based on the effective model, we explicitly calculate the Berry curvature dipole, which is found to be vanishingly small for the triple-point semimetal phase, and large in the Weyl semimetal phase. Our results not only put forward an effective method for the identification of magnetic orders and topological phases in AFM half-Heusler materials, but also suggest these materials as a versatile platform for engineering the nonlinear Hall effect.
基金This work was supported by the National Natural Science Foundation of China(No.11404043)Graduate Research Innovation Project of Chongqing(No.CYS18253).
文摘The two-dimensional(2D)ferromagnetic materials and the related van der Waals homostructures have attracted considerable interest,while the 2D antiferromagnetic material has not yet been reported.Based on first-principles calculations,we investigate both electronic structures and magnetic orderings of bulk and monolayer of chromium diiodides(CrI2).We demonstrate a counter-intuitive fact that the ground state of the free-standing monolayer of CrI2 is antiferromagnetic though the bulk possesses macroscopic ferromagnetic ordering.The interlayer interaction remains antiferromagnetic up to few-layer scenarios.The unique feature of CrI2 makes it an ideal workbench to investigate the relation between magnetic couplings and interlayer van der Waals interactions,and may offer an opportunity to 2D antiferromagnetic spintronic devices.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.12104183,52173283,and 62071200)the Natural Science Foundation of Shandong Province,China(Grant Nos.ZR2021MA040 and ZR2023MA091)+2 种基金the Taishan Scholar Program of Shandong Province,China(Grant No.ts20190939)the Independent Cultivation Program of Innovation Team of Jinan City(Grant No.2021GXRC043)supported by high-performance computing platform at University of Jinan。
文摘Recently,Chern insulators in an antiferromagnetic(AFM)phase have been suggested theoretically and predicted in a few materials.However,the experimental observation of two-dimensional(2D)AFM quantum anomalous Hall effect is still a challenge to date.In this work,we propose that an AFM Chern insulator can be realized in a 2D monolayer of NiOsCl_(6)modulated by a compressive strain.Strain modulation is accessible experimentally and used widely in predicting and tuning topological nontrivial phases.With first-principles calculations,we have investigated the structural,magnetic,and electronic properties of NiOsCl_(6).Its stability has been confirmed through molecular dynamical simulations,elasticity constant,and phonon spectrum.It has a collinear AFM order,with opposite magnetic moments of 1.3μBon each Ni/Os atom,respectively,and the Neel temperature is estimated to be 93 K.In the absence of strain,it functions as an AFM insulator with a direct gap with spin-orbital coupling included.Compressive strain will induce a transition from a normal insulator to a Chern insulator characterized by a Chern number C=1,with a band gap of about 30 meV.This transition is accompanied by a structural distortion.Remarkably,the Chern insulator phase persists within the 3%-10%compressive strain range,offering an alternative platform for the utilization of AFM materials in spintronic devices.
基金supported by the National Natural Science Foundation of China(Grant Nos.52101233 and52071279)the Hebei Natural Science Foundation(Grant No.E2022203010)+1 种基金the China Postdoctoral Science Foundation(Grant No.2022M712685)the Innovation Capability Improvement Project of Hebei Province(Grant No.22567605H)。
文摘Out-of-plane weak ferromagnetic(OWFM)spin arrangements with topological properties can realize a series of interesting physical properties.However,this spin structure tends to exist at low temperatures.The OWFM structure can also be induced at room temperature by hydrostatic pressure,whereas this isotropic approach tends to form helical AFM structures.We report the OWFM spin arrangement in single crystal Mn_(3)Sn by an anisotropic strategy of high-stressconstrained compression deformation at room temperature.Both experimental and theoretical simulation results show that the alignment of the OWFM spin structure is due to the distortion of the atomic scale caused by the strain energy during deformation.The OWFM spin arrangement can significantly change the magnetic property of Mn_(3)Sn.As a result,the remanent magnetization M_(r)for the deformed sample(0.056μ_(B)/f.u.)is about eleven times that for the pre-deformed sample(0.005μ_(B)/f.u.),and the coercivity(H_(c))increases from 0 k Oe(pre-deformed sample)to 6.02 k Oe(deformed sample).Our findings provide a way to generate the OWFM spin structure at room temperature and may give fresh ideas for creating antiferromagnetic materials with excellent physical properties.
基金the Tencent Foundation through the XPLORER PRIZEthe National Key Research and Development Program of China(Grant Nos.2018YFB0407602 and 2021YFB3601303)the National Natural Science Foundation of China(Grant Nos.61627813,11904017,92164206,and 61571023)。
文摘Topological magnetotransport in non-collinear antiferromagnets has attracted extensive attention due to the exotic phenomena such as large anomalous Hall effect(AHE),magnetic spin Hall effect,and chiral anomaly.The materials exhibiting topological antiferromagnetic physics are typically limited in special Mn_3X family such as Mn_3Sn and Mn_3Ge.Exploring the topological magnetotransport in common antiferromagnetic materials widely used in spintronics will not only enrich the platforms for investigating the non-collinear antiferromagnetic physics,but also have great importance for driving the nontrivial topological properties towards practical applications.Here,we report remarkable AHE,anisotropic and negative parallel magnetoresistance in the magnetron-sputtered Ir_(20)Mn_(80)antiferromagnet,which is one of the most widely used antiferromagnetic materials in industrial spintronics.The ab initio calculations suggest that the Ir_4Mn_(16)(IrMn_4)or Mn_3Ir nanocrystals hold nontrivial electronic band structures,which may contribute to the observed intriguing magnetotransport properties in the Ir_(20)Mn_(80).Further,we demonstrate the spin–orbit torque switching of the antiferromagnetic Ir_(20)Mn_(80)by the spin Hall current of Pt.The presented results highlight a great potential of the magnetron-sputtered Ir_(20)Mn_(80)film for exploring the topological antiferromagnet-based physics and spintronics applications.
基金supported by the financial support of National Key R&D Program of China(2022YFA1402600)National Natural Science Foundation of China(NSFC)(52272264)+1 种基金Sino-German Mobility Programme Project(M-0273)the Guangdong Basic and Applied Basic Research Foundation(2022A1515140117).
文摘Magnetic materials with non-collinear spin orderings provide an outstanding platform to probe spin-tronic phenomena owing to their strong spin-orbit coupling(SOC)and unique Berry phase.It is thus important to obtain a non-collinear antiferromagnetic(AFM)phase at room temperature(RT).Signifi-cantly,the discovery of novel materials with nearly zero thermal expansion(ZTE)property near RT is required and pursued for avoiding thermal stress and fracture in spintronic devices.Herein,the doping of Sn(Ge)at the Ag site in the triangular lattice Mn_(3)Ag_(1-x)Sn(Ge)_(x)N compounds increases effectively the Neel point and makes the interesting non-collinearГ^(5g)AFM phase exist above RT.The magnetic phase diagrams withГ^(5g)phase up to 498 K were built by the combined analysis of neutron powder diffraction(NPD),magnetic measurements,electronic transport,and differential scanning calorimetry(DSC).The thermal expansion behaviors of Mn_(3)Ag_(1-x)Sn(Ge)_(x)N were modulated,and the nearly ZTE above RT was achieved in Mn_(3)Ag_(0.5)Ge_(0.5)N withinГ^(5g)AFM ordering.Our findings offer an effective way to tailor the non-collinear AFM ordering and correlated thermal expansion behavior for potential use in the emerging field of thermal stress-free magnetic chip materials.
基金supported by the National Natural Science Foundation of China under grants Nos.51590883,51331006 and51471167a project of the Chinese Academy of Sciences with grant No.KJZD-EW-M05-3
文摘By inserting an ultrathin Pt layer at Co/Ru interface,we established antiferromagnetic coupling with outof-plane magnetization in Co/Ru/Co film stacks fabricated by sputtering.To achieve configuration suitable for free layer,the magnetic properties of the stacks have been investigated by changing the thickness of Co,Ru and Pt layers using an orthogonal wedges technique.It is found that magnetic properties for upper Co layer thinner than 0.5 nm are sensitive to little change in Ru thickness.Improving continuity of upper Co layer by slightly increasing the thickness can effectively increase the squareness of minor loop.The switching magnetization of synthetic antiferromagnetic（SAF） structure is achieved by DC current under an in-plane static magnetic field of ± 500 Oe.This structure is very promising for free layer in spintronic application.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11404316 and 11304159)the Natural Science Foundation of Jiangsu Province+2 种基金Chinathe Science Foundation of Nanjing University of Posts and TelecommunicationsChina(Grant Nos.BK20140863 and NY213075)
文摘Single crystals of 4SC（NH2）2–Ni1-xCux Cl2（x = 0.03）（Cu-DTN） containing spin S = 1/2 Cu^2＋and S = 1 Ni^2＋cations are synthesized by slow evaporation methods. Structural characterization demonstrates that the Cu-DTN is of a tetrahedral structure with lattice parameter c being 9.0995 A, which is 1.32% expansion compared with that of parent material DTN due to the larger radius of the Cu ion. Direct current（DC） susceptibility measurements show that both the antiferromagnetic exchange interaction at low temperature and the large anisotropy of susceptibilities are suppressed after doping the Cu ion, which could be related to the structural distortion and the increase of the super-exchange paths in Cu-DTN.
基金Project supported by the National Natural Science Foundation of China (Grant No. 11174092)
文摘Monodisperse NiO nanocrystals with an average particle size of 3 -h 0.4 nm are successfully synthesized by the thermal decomposition of Ni-oleylamine complex in an organic solvent under a continuous 02 flux. The crystalline structure and the morphology of the product are investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and transmission electron microscopy. Magnetization and alternating-current （ac） susceptibility measurements indicate that the structure of the particles can be considered as consisting of an antiferromagnetieally ordered core and a spin- glass-like surface shell. In addition, both the exchange bias field and the vertical magnetization shift can be observed in this system at 10 K after field cooling. This observed exchange bias effect is explained in terms of the exchange interaction between the antiferromagnetie core and the spin-glass-like shell.
基金supported by the NNSFC(21471112 and 21571139)Natural Science Foundation of Tianjin(17JCQNJC05900)
文摘A novel two-dimensional layered FeⅢ formate, Fe(HCO2)2ClH2O, has been synthesized by solvothermal reaction. The structure of complex is characterized by single-crystal X-ray diffraction. The complex crystallizes in tetragonal space group P4/nmm with a = 5.9588(6), c = 8.3831(17) ?, V = 297.66(7) ?3, Z = 2, F(000) = 198, Dc = 2.224 g/cm3, Mr = 199.35, μ = 2.927 mm-1, the final R = 0.0231 and w R = 0.0585(I > 2σ(I)) for all data. Single-crystal structure analysis indicates that the complex has a 2D metal formate structure with only formate anions as bridges. The anti-anti formats link the FeⅢ ions to form a(4, 4) net, while the chlorine ions and water molecules coordinate to FeⅢ on both sides of the layer. Magnetic study have shown that an antiferromagnetic interactions between the FeⅢ ions in the complex. And a field induced spin-flop was detected at low temperature.
基金Key Scientific Research Projects of Colleges and Universities in Henan Province,China(Grant No.21A140022)。
文摘Exploring the half-metallic nanostructures with large band gap and high carrier mobility is a crucial solution for developing high-performance spintronic devices.The electric and magnetic properties of monolayer zigzag black-phosphorene nanoribbons(ZBPNRs)with various widths are analyzed by means of the first-principles calculations.Our results show that the magnetic ground state is dependent on the width of the nanoribbons.The ground state of narrow nanoribbons smaller than 8ZBPNRs prefers ferromagnetic order in the same edge but antiferromagnetic order between two opposite edges.In addition,we also calculate the electronic band dispersion,density of states and charge density difference of 8ZBPNRs under the action of out-of-plane electric field.More interesting,the addition of out-of-plane field can modulate antiferromagnetic semiconductor to the half metal by splitting the antiferromagnetic degeneracy.Our results propose a new approach to realize half-metal in phosphorene,which overcomes the drawbacks of graphene/silicene with negligible band gap as well as the transitional metal sulfide(TMS)with low carrier mobility.
