This study presents experimental evidence of the dependence of non-radiative recombination processes on the electron-phonon coupling of perovskite in perovskite solar cells(PSCs).Via A-site cation engineering,a weaker...This study presents experimental evidence of the dependence of non-radiative recombination processes on the electron-phonon coupling of perovskite in perovskite solar cells(PSCs).Via A-site cation engineering,a weaker electron-phonon coupling in perovskite has been achieved by introducing the structurally soft cyclohexane methylamine(CMA^(+))cation,which could serve as a damper to alleviate the mechanical stress caused by lattice oscillations,compared to the rigid phenethyl methylamine(PEA^(+))analog.It demonstrates a significantly lower non-radiative recombination rate,even though the two types of bulky cations have similar chemical passivation effects on perovskite,which might be explained by the suppressed carrier capture process and improved lattice geometry relaxation.The resulting PSCs achieve an exceptional power conversion efficiency(PCE)of 25.5%with a record-high opencircuit voltage(V_(OC))of 1.20 V for narrow bandgap perovskite(FAPbI_(3)).The established correlations between electron-phonon coupling and non-radiative decay provide design and screening criteria for more effective passivators for highly efficient PSCs approaching the Shockley-Queisser limit.展开更多
The effects of irradiation of 1.0 MeV electrons on the n＋-p GaAs middle cell of GalnP/GaAs/Ge triple-junction solar cells are investigated by temperature-dependent photoluminescence （PL） measurements in the 10-300K...The effects of irradiation of 1.0 MeV electrons on the n＋-p GaAs middle cell of GalnP/GaAs/Ge triple-junction solar cells are investigated by temperature-dependent photoluminescence （PL） measurements in the 10-300K temperature range. The appearance of thermal quenching of the PL intensity with increasing temperature confirms the presence of a nonradiative recombination center in the cell after the electron irradiation, and the thermal activation energy of the center is determined using the Arrhenius plot of the PL intensity. Furthermore, by comparing the thermal activation and the ionization energies of the defects, the nonradiative recombination center in the n＋ p GaAs middle cell acting as a primary defect is identified as the E5 electron trap located at Ec - 0.96 eV.展开更多
Using the method of Picus and Beer invariants, general expressions are obtained for the total intensity I and the degree of circular polarization Рcirc.of the luminescence of GaAs-type semiconductors with the partici...Using the method of Picus and Beer invariants, general expressions are obtained for the total intensity I and the degree of circular polarization Рcirc.of the luminescence of GaAs-type semiconductors with the participation of shallow acceptor levels in a longitudinal magnetic field H. Special cases are analyzed depending on the value and direction of the magnetic field strength, as well as on the constants of the g-factor of the acceptor g1,g2and the conduction band electron ge. In the case of a strong magnetic field H// [100], [111], [110], a numerical calculation of the angular dependence of the quantities I and Рcirc.was performed for some critical values of g2/g1, at which Рcirc.exhibits a sharp anisotropy in the range from −100% to +100%, and the intensity of the crystal radiation along the magnetic field tends to a minimum value.展开更多
Nonradiative recombination (NRR) centers in n-type GaN samples grown by MOCVD technique on a LT-GaN buffer layer and aAlN buffer layer have been studied by two wavelength excited photoluminescence (TWEPL). The near ba...Nonradiative recombination (NRR) centers in n-type GaN samples grown by MOCVD technique on a LT-GaN buffer layer and aAlN buffer layer have been studied by two wavelength excited photoluminescence (TWEPL). The near band-edge photoluminescence (PL) intensity decreases due to the superposition of below-gap excitation (BGE) light of energies 0.93, 1.17 and 1.27 eV over above-gap excitation (AGE) light of energy 4.66 eV. The decrease in PL intensity due to the addition of the BGE has been explained by a two levels recombination model based on SRH statistics. It indicates the presence of a pair of NRR centers in both samples, which are activated by the BGE. The degree of quenching in PL intensity for the sample grown on LT-GaN buffer layer is stronger than the sample grown on AlN buffer layer for all BGE sources. This result implies that the use of the AlN buffer layer is more effective for reducing the NRR centers in n-GaN layers than the LT-GaN buffer layer. The dependence of PL quenching on the AGE density, the BGE density and temperature has been also investigated. The NRR parameters have been quantitatively determined by solving rate equations and fitting the simulated results with the experimental data.展开更多
Influence of recombination centers’ changes on the form of phase portraits has been studied. It has been shown that the shape of the phase portraits depends on the concentration of semiconductor materials’ recombina...Influence of recombination centers’ changes on the form of phase portraits has been studied. It has been shown that the shape of the phase portraits depends on the concentration of semiconductor materials’ recombination centers.展开更多
Recent experiments report the rotation of FA(FA=HC[NH2]2+)cations significantly influence the excited-state lifetime of FAPbI3.However,the underlying mechanism remains unclear.Using ab initio nonadiabatic(NA)molecular...Recent experiments report the rotation of FA(FA=HC[NH2]2+)cations significantly influence the excited-state lifetime of FAPbI3.However,the underlying mechanism remains unclear.Using ab initio nonadiabatic(NA)molecular dynamics combined with time-domain density functional simulations,we have demonstrated that reorientation of partial FA cations significantly inhibits nonradiative electron-hole recombination with respect to the pristine FAPbI3 due to the decreased NA coupling by localizing electron and hole in different positions and the suppressed atomic motions.Slow nuclear motions simultaneously increase the decoherence time,which is overcome by the reduced NA coupling,extending electron-hole recombination time scales to several nanoseconds and being about 3.9 times longer than that in pristine FAPbI3,which occurs within sub-nanosecond and agrees with experiment.Our study established the mechanism for the experimentally reported prolonged excited-state lifetime,providing a rational strategy for design of high performance of perovskite solar cells and optoelectronic devices.展开更多
Metal-halide perovskite nanocrystals(NCs)have gained significant attention in the field of optoelectronic and photonic devices due to their promising applications.Despite their exceptional optical properties,the impac...Metal-halide perovskite nanocrystals(NCs)have gained significant attention in the field of optoelectronic and photonic devices due to their promising applications.Despite their exceptional optical properties,the impact of different synthetic strategies on the fundamental nature of NCs,such as nonradiative recombination centers,remains poorly understood.In this study,we investigated the photophysical properties of CsPbBr_(3) NCs synthesized using two distinct methods,hot injection and ligand-assisted reprecipitation,at the individual particle level.We observed different blinking behaviors under specific photoexcitation power densities and proposed,through intensity-lifetime analysis and Monte-Carlo simulations,that these different synthetic strategies can fabricate NCs with similar crystal structures but distinct surface quenchers with varying energy levels,which significantly affected the photo-induced blinking-down and blinking-up behaviors in individual NCs.Our findings indicate a practical and feasible approach for controlling defect engineering in perovskite NCs,with significant implications for their use in optoelectronic and other technological applications.展开更多
Interfacial regulation,serving multiple roles,is critical for the fabrication of stable and efficient organic photovoltaics(OPVs).Herein,a multifunctional cathode interlayer PDINO(15 nm)is prepared by regulating film ...Interfacial regulation,serving multiple roles,is critical for the fabrication of stable and efficient organic photovoltaics(OPVs).Herein,a multifunctional cathode interlayer PDINO(15 nm)is prepared by regulating film thickness,which is inserted between active components and stable silver electrode to align work function,and maintain good interfacial contact and device stability.The thick film can help to reduce interfacial surface defects,keep stable surface morphology,and block the silver diffusion into the active layer.Consequently,the optimal PM6:Y6 device records an impressive power conversion efficiency(PCE)of 17.48%with minimized non-radiative recombination loss of 0.239 V.More importantly,the unencapsulated device maintains 91%of the original PCE after aging for over 60 days at 25℃ and 10%relative humidity in dark conditions.Meanwhile,the PM6:eC9 device achieves a remarkable PCE of 18.22%with the enhancement of open-circuit voltage(V_(oc)).Furthermore,the 1 cm^(2) device-based PDINO(15 nm)/Ag shows a high PCE of 15.2%while only 12.6%for PDINO(9 nm)/Al,indicating the good compatibility of PDINO(15 nm)interlayer with the R2R coating processes used in large-area OPVs fabrication.This work highlights the promise of interfacial regulation to simultaneously stabilize and enhance the efficiency of organic photovoltaics.展开更多
Inverted perovskite solar cells(PSCs) have attracted broad research and industrial interest owing to their suppressed hysteresis,cost-effectiveness,and easy-fabrication.However,the issue of non-radiative recombination...Inverted perovskite solar cells(PSCs) have attracted broad research and industrial interest owing to their suppressed hysteresis,cost-effectiveness,and easy-fabrication.However,the issue of non-radiative recombination losses at the n-type interface between the perovskite and fullerene has impeded further improvement of photovoltaic performance.Here,we modify the n-type interface of FAPbI_(3) perovskite films by constructing a stereochemical two-dimensional(2D) perovskite interlayer,in which the organic cations comprise both pyridine and ammonium groups.The pyridine N donor can create stable bonding with the surface-uncoordinated Pb on the perovskite,thereby passivating the shallow-level defects and enhancing the air stability of the film.Furthermore,the pyridine N donor also offers a positive polar interface to decrease the surface work function of the perovskite film,enabling n-type modification.Ultimately,we employ a p-i-n photovoltaic(PV) device with the positive dipole interlayer at perovskite/fullerene contact and achieve remarkable photoelectric conversion efficiency(PCE) of 22.0%.展开更多
Three kinds of methods (0.08 mol/L iodine in ethanol, SiNx:H, and 40% HF) are used to passivate solar-grade Czochralski (Cz) silicon wafers. Thereafter, minority carrier lifetime and Fe-B pair density of the wafers ar...Three kinds of methods (0.08 mol/L iodine in ethanol, SiNx:H, and 40% HF) are used to passivate solar-grade Czochralski (Cz) silicon wafers. Thereafter, minority carrier lifetime and Fe-B pair density of the wafers are measured using the microwave photo-conductance decay (μ-PCD) technique. Based on the measured minority carrier lifetime, it is found that the passivation quality achieved by 0.08 mol/L iodine in ethanol is the best, while that by 40% HF solution is the worst. For the identical wafer, the density distribution of Fe-B pairs is different when different passivation methods are used. When the wafers are passivated by SiNx:H, there exists a close correlation between the distribution of minority carrier lifetime and the concentration distribution of Fe-B pairs. Furthermore, for wafers with high-quality passivation, there is a strong correlation between the recombination center concentration and the Fe-B pair density. All the analyses verify that the surface passivation quality of wafers influences the measurement results of minority carrier lifetime, Fe-B pair density and recombination center concentration.展开更多
目的:汇总Ⅱ/Ⅲ期和补充多中心临床试验资料,评价重组人血小板生成素(recombinant human thrombopoietin,rh-TPO)治疗实体肿瘤患者化疗后血小板(platelet,PLT)减少症的临床疗效和安全性。方法:3个试验共入组受试者276例,其中Ⅱ期试验入...目的:汇总Ⅱ/Ⅲ期和补充多中心临床试验资料,评价重组人血小板生成素(recombinant human thrombopoietin,rh-TPO)治疗实体肿瘤患者化疗后血小板(platelet,PLT)减少症的临床疗效和安全性。方法:3个试验共入组受试者276例,其中Ⅱ期试验入组63例,Ⅲ期试验入组154例,补充临床试验入组59例;其后剔除5例、脱落41例,共有230例纳入符合方案(pre-protocol,PP)数据集;所有患者均经组织学或细胞学证实患有实体肿瘤。Ⅱ期临床试验和补充临床试验为随机交叉自身对照试验,Ⅲ期临床试验中受试者按是否参加随机交叉对照分为随机交叉自身对照试验部分和非随机交叉自身对照部分。将接受rh-TPO用药的试验周期定义为用药周期,未用rh-TPO的周期定义为空白对照周期,试验期间的化疗方案和剂量均维持不变。将所有临床试验数据合并并进行疗效和安全性分析。结果:意向性治疗人群(intention-to-treat,ITT)数据集及PP数据集均显示出非常显著的一致性变化(以ITT集数据为例)。与对照周期相比,rh-TPO治疗可显著减轻化疗对PLT损伤的程度[化疗后PLT下降的最低值:(63.02±46.48)×109vs(49.47±31.41)×109个/L,P=0.002],缩短损伤和恢复时间[恢复至75×109个/L以上需要的天数:(11.18±9.71)vs(17.8±10.46)d,P=0.000],大幅提高血小板恢复水平[末次随访时PLT检测值:(211.21±119.20)×109vs(138.13±71.54)×109个/L,P=0.000;化疗后PLT最高值:(262.78±162.60)×109vs(149.36±73.26)×109个/L,P=0.000;末次随访时PLT与基线的差值:(79.64±118.06)×109vs(-8.92±102.50)×109个/L,P=0.000]。rh-TPO还可降低PLT输注患者的比例(12.21%vs 19.85%,P=0.017),减少PLT输注例次(0.22±0.72)vs(0.37±0.90)次,P=0.010)和输注量[(1.66±6.09)vs(2.77±7.08)U,P=0.009];补充试验中,PLT输注患者比例减少更为显著(13.79%vs 33.93%,P=0.0082)。用药前后血红蛋白含量和白细胞计数变化、肝肾功能、凝血功能的差异均无统计学意义(P>0.05)。276例患者中仅出现11例次不良反应,多为发热(6例)或寒战(2例)。结论:实体肿瘤患者化疗后给予国产rh-TPO可显著减轻化疗对PLT的损伤程度,缩短损伤和恢复时间,大幅提高PLT水平,降低患者PLT输注的例次和数量,且无严重不良反应。展开更多
基金supported by the National Natural Science Foundation of China(U21A20331,81903743,22005322,22279151,and 22275004)National Science Fund for Distinguished Young Scholars(21925506).
文摘This study presents experimental evidence of the dependence of non-radiative recombination processes on the electron-phonon coupling of perovskite in perovskite solar cells(PSCs).Via A-site cation engineering,a weaker electron-phonon coupling in perovskite has been achieved by introducing the structurally soft cyclohexane methylamine(CMA^(+))cation,which could serve as a damper to alleviate the mechanical stress caused by lattice oscillations,compared to the rigid phenethyl methylamine(PEA^(+))analog.It demonstrates a significantly lower non-radiative recombination rate,even though the two types of bulky cations have similar chemical passivation effects on perovskite,which might be explained by the suppressed carrier capture process and improved lattice geometry relaxation.The resulting PSCs achieve an exceptional power conversion efficiency(PCE)of 25.5%with a record-high opencircuit voltage(V_(OC))of 1.20 V for narrow bandgap perovskite(FAPbI_(3)).The established correlations between electron-phonon coupling and non-radiative decay provide design and screening criteria for more effective passivators for highly efficient PSCs approaching the Shockley-Queisser limit.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11675020,11375028,11075018 and 10675023
文摘The effects of irradiation of 1.0 MeV electrons on the n＋-p GaAs middle cell of GalnP/GaAs/Ge triple-junction solar cells are investigated by temperature-dependent photoluminescence （PL） measurements in the 10-300K temperature range. The appearance of thermal quenching of the PL intensity with increasing temperature confirms the presence of a nonradiative recombination center in the cell after the electron irradiation, and the thermal activation energy of the center is determined using the Arrhenius plot of the PL intensity. Furthermore, by comparing the thermal activation and the ionization energies of the defects, the nonradiative recombination center in the n＋ p GaAs middle cell acting as a primary defect is identified as the E5 electron trap located at Ec - 0.96 eV.
文摘Using the method of Picus and Beer invariants, general expressions are obtained for the total intensity I and the degree of circular polarization Рcirc.of the luminescence of GaAs-type semiconductors with the participation of shallow acceptor levels in a longitudinal magnetic field H. Special cases are analyzed depending on the value and direction of the magnetic field strength, as well as on the constants of the g-factor of the acceptor g1,g2and the conduction band electron ge. In the case of a strong magnetic field H// [100], [111], [110], a numerical calculation of the angular dependence of the quantities I and Рcirc.was performed for some critical values of g2/g1, at which Рcirc.exhibits a sharp anisotropy in the range from −100% to +100%, and the intensity of the crystal radiation along the magnetic field tends to a minimum value.
文摘Nonradiative recombination (NRR) centers in n-type GaN samples grown by MOCVD technique on a LT-GaN buffer layer and aAlN buffer layer have been studied by two wavelength excited photoluminescence (TWEPL). The near band-edge photoluminescence (PL) intensity decreases due to the superposition of below-gap excitation (BGE) light of energies 0.93, 1.17 and 1.27 eV over above-gap excitation (AGE) light of energy 4.66 eV. The decrease in PL intensity due to the addition of the BGE has been explained by a two levels recombination model based on SRH statistics. It indicates the presence of a pair of NRR centers in both samples, which are activated by the BGE. The degree of quenching in PL intensity for the sample grown on LT-GaN buffer layer is stronger than the sample grown on AlN buffer layer for all BGE sources. This result implies that the use of the AlN buffer layer is more effective for reducing the NRR centers in n-GaN layers than the LT-GaN buffer layer. The dependence of PL quenching on the AGE density, the BGE density and temperature has been also investigated. The NRR parameters have been quantitatively determined by solving rate equations and fitting the simulated results with the experimental data.
文摘Influence of recombination centers’ changes on the form of phase portraits has been studied. It has been shown that the shape of the phase portraits depends on the concentration of semiconductor materials’ recombination centers.
基金supported by the National Natural Science Foundation of China(No.21573022 and No.51861135101)the Recruitment Program of Global Youth Experts of Chinathe Beijing Normal University Startup。
文摘Recent experiments report the rotation of FA(FA=HC[NH2]2+)cations significantly influence the excited-state lifetime of FAPbI3.However,the underlying mechanism remains unclear.Using ab initio nonadiabatic(NA)molecular dynamics combined with time-domain density functional simulations,we have demonstrated that reorientation of partial FA cations significantly inhibits nonradiative electron-hole recombination with respect to the pristine FAPbI3 due to the decreased NA coupling by localizing electron and hole in different positions and the suppressed atomic motions.Slow nuclear motions simultaneously increase the decoherence time,which is overcome by the reduced NA coupling,extending electron-hole recombination time scales to several nanoseconds and being about 3.9 times longer than that in pristine FAPbI3,which occurs within sub-nanosecond and agrees with experiment.Our study established the mechanism for the experimentally reported prolonged excited-state lifetime,providing a rational strategy for design of high performance of perovskite solar cells and optoelectronic devices.
基金supported by the National Natural Science Foundation of China(Nos.22073046,62011530133)the Fundamental Research Funds for the Central Universities(Nos.020514380256,020514380278)+1 种基金the Double-Innovation Doctor Program of Jiangsu Province,China(No.JSSCBS20211151)the Funding for School-level Research Projects of Yancheng Institute of Technology(No.xjr2021062).
文摘Metal-halide perovskite nanocrystals(NCs)have gained significant attention in the field of optoelectronic and photonic devices due to their promising applications.Despite their exceptional optical properties,the impact of different synthetic strategies on the fundamental nature of NCs,such as nonradiative recombination centers,remains poorly understood.In this study,we investigated the photophysical properties of CsPbBr_(3) NCs synthesized using two distinct methods,hot injection and ligand-assisted reprecipitation,at the individual particle level.We observed different blinking behaviors under specific photoexcitation power densities and proposed,through intensity-lifetime analysis and Monte-Carlo simulations,that these different synthetic strategies can fabricate NCs with similar crystal structures but distinct surface quenchers with varying energy levels,which significantly affected the photo-induced blinking-down and blinking-up behaviors in individual NCs.Our findings indicate a practical and feasible approach for controlling defect engineering in perovskite NCs,with significant implications for their use in optoelectronic and other technological applications.
基金supported by the National Natural Science Foundation of China(51903189,51800334)。
文摘Interfacial regulation,serving multiple roles,is critical for the fabrication of stable and efficient organic photovoltaics(OPVs).Herein,a multifunctional cathode interlayer PDINO(15 nm)is prepared by regulating film thickness,which is inserted between active components and stable silver electrode to align work function,and maintain good interfacial contact and device stability.The thick film can help to reduce interfacial surface defects,keep stable surface morphology,and block the silver diffusion into the active layer.Consequently,the optimal PM6:Y6 device records an impressive power conversion efficiency(PCE)of 17.48%with minimized non-radiative recombination loss of 0.239 V.More importantly,the unencapsulated device maintains 91%of the original PCE after aging for over 60 days at 25℃ and 10%relative humidity in dark conditions.Meanwhile,the PM6:eC9 device achieves a remarkable PCE of 18.22%with the enhancement of open-circuit voltage(V_(oc)).Furthermore,the 1 cm^(2) device-based PDINO(15 nm)/Ag shows a high PCE of 15.2%while only 12.6%for PDINO(9 nm)/Al,indicating the good compatibility of PDINO(15 nm)interlayer with the R2R coating processes used in large-area OPVs fabrication.This work highlights the promise of interfacial regulation to simultaneously stabilize and enhance the efficiency of organic photovoltaics.
基金financially supported by the National Ten Thousand Talent Program for Young Top-notch Talent,China,the National Natural Science Fund for Excellent Young Scholars,China(52022030)the National Natural Science Foundation of China,China(51972111,52203330)+7 种基金the Shanghai Pilot Program for Basic Research,China(22TQ1400100-5)the “Dawn”Program of Shanghai Education Commission,China(22SG28)the Shanghai Municipal Natural Science Foundation,China(22ZR1418000)the Science and Technology Innovation Plan of Shanghai Science and Technology Commission,China(22YF1410000)the Postdoctoral Research Foundation of China,China(2021M701190)the Fundamental Research Funds for the Central Universities,China(JKD01231632,JKVD1231041)the Major Science and Technology Projects of Inner Mongolia Autonomous Region,China(2021ZD0042)the Shanghai Engineering Research Center of Hierarchical Nanomaterials,China(18DZ2252400)。
文摘Inverted perovskite solar cells(PSCs) have attracted broad research and industrial interest owing to their suppressed hysteresis,cost-effectiveness,and easy-fabrication.However,the issue of non-radiative recombination losses at the n-type interface between the perovskite and fullerene has impeded further improvement of photovoltaic performance.Here,we modify the n-type interface of FAPbI_(3) perovskite films by constructing a stereochemical two-dimensional(2D) perovskite interlayer,in which the organic cations comprise both pyridine and ammonium groups.The pyridine N donor can create stable bonding with the surface-uncoordinated Pb on the perovskite,thereby passivating the shallow-level defects and enhancing the air stability of the film.Furthermore,the pyridine N donor also offers a positive polar interface to decrease the surface work function of the perovskite film,enabling n-type modification.Ultimately,we employ a p-i-n photovoltaic(PV) device with the positive dipole interlayer at perovskite/fullerene contact and achieve remarkable photoelectric conversion efficiency(PCE) of 22.0%.
基金supported by the National Natural Science Foundation of China (60876045)Shanghai Leading Academic Discipline Project (S30105)+2 种基金the Innovation Foundation for the Graduate student of Shanghai Univer-sity (SHUCX091012)R&D Foundation of SHU-SOENs PV Joint Lab. (SS-E0700601)Shanghai Leading Basic Research Project (09JC14-05900)
文摘Three kinds of methods (0.08 mol/L iodine in ethanol, SiNx:H, and 40% HF) are used to passivate solar-grade Czochralski (Cz) silicon wafers. Thereafter, minority carrier lifetime and Fe-B pair density of the wafers are measured using the microwave photo-conductance decay (μ-PCD) technique. Based on the measured minority carrier lifetime, it is found that the passivation quality achieved by 0.08 mol/L iodine in ethanol is the best, while that by 40% HF solution is the worst. For the identical wafer, the density distribution of Fe-B pairs is different when different passivation methods are used. When the wafers are passivated by SiNx:H, there exists a close correlation between the distribution of minority carrier lifetime and the concentration distribution of Fe-B pairs. Furthermore, for wafers with high-quality passivation, there is a strong correlation between the recombination center concentration and the Fe-B pair density. All the analyses verify that the surface passivation quality of wafers influences the measurement results of minority carrier lifetime, Fe-B pair density and recombination center concentration.
文摘目的:汇总Ⅱ/Ⅲ期和补充多中心临床试验资料,评价重组人血小板生成素(recombinant human thrombopoietin,rh-TPO)治疗实体肿瘤患者化疗后血小板(platelet,PLT)减少症的临床疗效和安全性。方法:3个试验共入组受试者276例,其中Ⅱ期试验入组63例,Ⅲ期试验入组154例,补充临床试验入组59例;其后剔除5例、脱落41例,共有230例纳入符合方案(pre-protocol,PP)数据集;所有患者均经组织学或细胞学证实患有实体肿瘤。Ⅱ期临床试验和补充临床试验为随机交叉自身对照试验,Ⅲ期临床试验中受试者按是否参加随机交叉对照分为随机交叉自身对照试验部分和非随机交叉自身对照部分。将接受rh-TPO用药的试验周期定义为用药周期,未用rh-TPO的周期定义为空白对照周期,试验期间的化疗方案和剂量均维持不变。将所有临床试验数据合并并进行疗效和安全性分析。结果:意向性治疗人群(intention-to-treat,ITT)数据集及PP数据集均显示出非常显著的一致性变化(以ITT集数据为例)。与对照周期相比,rh-TPO治疗可显著减轻化疗对PLT损伤的程度[化疗后PLT下降的最低值:(63.02±46.48)×109vs(49.47±31.41)×109个/L,P=0.002],缩短损伤和恢复时间[恢复至75×109个/L以上需要的天数:(11.18±9.71)vs(17.8±10.46)d,P=0.000],大幅提高血小板恢复水平[末次随访时PLT检测值:(211.21±119.20)×109vs(138.13±71.54)×109个/L,P=0.000;化疗后PLT最高值:(262.78±162.60)×109vs(149.36±73.26)×109个/L,P=0.000;末次随访时PLT与基线的差值:(79.64±118.06)×109vs(-8.92±102.50)×109个/L,P=0.000]。rh-TPO还可降低PLT输注患者的比例(12.21%vs 19.85%,P=0.017),减少PLT输注例次(0.22±0.72)vs(0.37±0.90)次,P=0.010)和输注量[(1.66±6.09)vs(2.77±7.08)U,P=0.009];补充试验中,PLT输注患者比例减少更为显著(13.79%vs 33.93%,P=0.0082)。用药前后血红蛋白含量和白细胞计数变化、肝肾功能、凝血功能的差异均无统计学意义(P>0.05)。276例患者中仅出现11例次不良反应,多为发热(6例)或寒战(2例)。结论:实体肿瘤患者化疗后给予国产rh-TPO可显著减轻化疗对PLT的损伤程度,缩短损伤和恢复时间,大幅提高PLT水平,降低患者PLT输注的例次和数量,且无严重不良反应。
