We report on the growth of the high-quality GaN grain on a r-plane sapphire substrate by using a self-organized SiN interlayer as a selective growth mask. Transmission electron microscopy, scanning electron microscopy...We report on the growth of the high-quality GaN grain on a r-plane sapphire substrate by using a self-organized SiN interlayer as a selective growth mask. Transmission electron microscopy, scanning electron microscopy, and Raman spectroscopy are used to reveal the effect of SiN on the overgrown a-plane GaN growth. The SiN layer effectively terminates the propagation of the threading dislocation and basal plane stacking faults during a-plane GaN regrowth through the interlayer, resulting in the window region shrinking from a rectangle to a ＂black hole＂. Furthermore, strong yellow luminescence （YL） in the nonpolar plane and very weak YL in the semipolar plane on the GaN grain is revealed by cathodoluminescence, suggesting that C-involved defects are responsible for the YL.展开更多
基金Project supported by the Fundamental Research Funds for the Central Universities,China (Grant No. K50511250002)the National Key Science and Technology Special Project,China (Grant No. 2008ZX01002-002)the National Natural Science Foundation of China (Grant Nos. 60736033,60976068,and 61076097)
文摘We report on the growth of the high-quality GaN grain on a r-plane sapphire substrate by using a self-organized SiN interlayer as a selective growth mask. Transmission electron microscopy, scanning electron microscopy, and Raman spectroscopy are used to reveal the effect of SiN on the overgrown a-plane GaN growth. The SiN layer effectively terminates the propagation of the threading dislocation and basal plane stacking faults during a-plane GaN regrowth through the interlayer, resulting in the window region shrinking from a rectangle to a ＂black hole＂. Furthermore, strong yellow luminescence （YL） in the nonpolar plane and very weak YL in the semipolar plane on the GaN grain is revealed by cathodoluminescence, suggesting that C-involved defects are responsible for the YL.
