AIM： To introduce and evaluate the efficacy and technical aspects of endoscopic submucosal dissection （ESD） using a novel device, the Fork knife. METHODS： From March 2004 to April 2008, ESD was performed on 265 ga...AIM： To introduce and evaluate the efficacy and technical aspects of endoscopic submucosal dissection （ESD） using a novel device, the Fork knife. METHODS： From March 2004 to April 2008, ESD was performed on 265 gastric lesions using a Fork knife （Endo FS） （group A） and on 72 gastric lesions using a Flexknife （group B） at a single tertiary referral center. We retrospectively compared the endoscopic characteristics of the tumors, pathological findings, and sizes of the resected specimens. We also compared the en b/oc resection rate, complete resection rate, complications, and procedure time between the two groups. RESULTS： The mean size of the resected specimens was 4.27 ± 1.26 cm in group A and 4.29 ± 1.48 cm in group B. The en b/oc resection rate was 95.8% （254/265 lesions） in group A and 93.1% （67/72） in group B. Complete ESD without tumor cell invasion of the resected margin was obtained in 81.1% （215/265） of group A and in 73.6% （53/72） of group B. The perforation rate was 0.8% （2/265） in group A and 1.4% （1/72） in group B. The mean procedure time was 59.63 ± 56.12 min in group A and 76.65 ± 70.75 min in group B （P 〈 0.05）. CONCLUSION： The Fork knife （Endo FS） is useful for clinical practice and has the advantage of reducing the procedure time.展开更多
We propose a novel 3-dimensional hollow waveguide with a variable air core for widely tunable devices.We observed a wavelength shift of 1.8 nm in a hollow waveguide resonator with a displacement of 6μm in an air core.
Van der Waals heterostructure, which consists of various two- dimensional （2D） layered materials stacked along the direction perpendicular to their 2D plane, has emerged as a promising material system for device app...Van der Waals heterostructure, which consists of various two- dimensional （2D） layered materials stacked along the direction perpendicular to their 2D plane, has emerged as a promising material system for device applications in recent years .展开更多
The continuous downsizing of device has sustained Moore's law in the past 40 years.As the power dissipation becomes more and more serious,a lot of emerging technologies have been adopted in the past decade to solv...The continuous downsizing of device has sustained Moore's law in the past 40 years.As the power dissipation becomes more and more serious,a lot of emerging technologies have been adopted in the past decade to solve the short channel effect,leakage and performance degradation problems.In this paper,the emerging scaling technologies and device innovations,including high-k/metal gate,strain,ultra-shallow junction,tri-gate FinFET,extremely thin SOI and silicon nanowire FET will be reviewed and discussed in terms of the potential and challenge for post-Moore era.展开更多
An optically addressed liquid crystal modulator for wavefront control of 1053 nm laser beam is reported in this paper.Its working principle, control method and spatial phase modulation capability are mainly introduced...An optically addressed liquid crystal modulator for wavefront control of 1053 nm laser beam is reported in this paper.Its working principle, control method and spatial phase modulation capability are mainly introduced. A new method of measuring the relationship between gray level and phase retardation is proposed. The rationality of the curve is further confirmed by designing special experiments. According to the curve, several spatial phase distributions have been realized by this home-made device. The results show that, not only the maximum phase retardation is larger than2π for 1053 nm wavelength, but also the control accuracy is high. Compared with the liquid crystal on silicon type spatial light modulator, this kind of modulator has the advantages of generating smooth phase distribution and avoiding the black-matrix effect.展开更多
A new planar split dual gate （PSDG） MOSFET device, its characteristics and experimental results, as well as the three dimensional device simulations, are reported here for the first time. Both theoretical calculatio...A new planar split dual gate （PSDG） MOSFET device, its characteristics and experimental results, as well as the three dimensional device simulations, are reported here for the first time. Both theoretical calculation and 3D simulation, as well as the experiment data, show that the two independent split dual gates can provide dynamical control of the device characteristics, such as threshold voltage （Vt） and sub-threshold swing （SS）, as well as the device saturated current. The PSDG MOSFET transistor leakage current （loft） can be reduced as much as 78% of the traditional single gate MOSFET. The PSDG is fabricated and fully compatible with our conventional 0.18 μm logic process flow.展开更多
文摘AIM： To introduce and evaluate the efficacy and technical aspects of endoscopic submucosal dissection （ESD） using a novel device, the Fork knife. METHODS： From March 2004 to April 2008, ESD was performed on 265 gastric lesions using a Fork knife （Endo FS） （group A） and on 72 gastric lesions using a Flexknife （group B） at a single tertiary referral center. We retrospectively compared the endoscopic characteristics of the tumors, pathological findings, and sizes of the resected specimens. We also compared the en b/oc resection rate, complete resection rate, complications, and procedure time between the two groups. RESULTS： The mean size of the resected specimens was 4.27 ± 1.26 cm in group A and 4.29 ± 1.48 cm in group B. The en b/oc resection rate was 95.8% （254/265 lesions） in group A and 93.1% （67/72） in group B. Complete ESD without tumor cell invasion of the resected margin was obtained in 81.1% （215/265） of group A and in 73.6% （53/72） of group B. The perforation rate was 0.8% （2/265） in group A and 1.4% （1/72） in group B. The mean procedure time was 59.63 ± 56.12 min in group A and 76.65 ± 70.75 min in group B （P 〈 0.05）. CONCLUSION： The Fork knife （Endo FS） is useful for clinical practice and has the advantage of reducing the procedure time.
文摘We propose a novel 3-dimensional hollow waveguide with a variable air core for widely tunable devices.We observed a wavelength shift of 1.8 nm in a hollow waveguide resonator with a displacement of 6μm in an air core.
文摘Van der Waals heterostructure, which consists of various two- dimensional （2D） layered materials stacked along the direction perpendicular to their 2D plane, has emerged as a promising material system for device applications in recent years .
文摘The continuous downsizing of device has sustained Moore's law in the past 40 years.As the power dissipation becomes more and more serious,a lot of emerging technologies have been adopted in the past decade to solve the short channel effect,leakage and performance degradation problems.In this paper,the emerging scaling technologies and device innovations,including high-k/metal gate,strain,ultra-shallow junction,tri-gate FinFET,extremely thin SOI and silicon nanowire FET will be reviewed and discussed in terms of the potential and challenge for post-Moore era.
文摘An optically addressed liquid crystal modulator for wavefront control of 1053 nm laser beam is reported in this paper.Its working principle, control method and spatial phase modulation capability are mainly introduced. A new method of measuring the relationship between gray level and phase retardation is proposed. The rationality of the curve is further confirmed by designing special experiments. According to the curve, several spatial phase distributions have been realized by this home-made device. The results show that, not only the maximum phase retardation is larger than2π for 1053 nm wavelength, but also the control accuracy is high. Compared with the liquid crystal on silicon type spatial light modulator, this kind of modulator has the advantages of generating smooth phase distribution and avoiding the black-matrix effect.
文摘A new planar split dual gate （PSDG） MOSFET device, its characteristics and experimental results, as well as the three dimensional device simulations, are reported here for the first time. Both theoretical calculation and 3D simulation, as well as the experiment data, show that the two independent split dual gates can provide dynamical control of the device characteristics, such as threshold voltage （Vt） and sub-threshold swing （SS）, as well as the device saturated current. The PSDG MOSFET transistor leakage current （loft） can be reduced as much as 78% of the traditional single gate MOSFET. The PSDG is fabricated and fully compatible with our conventional 0.18 μm logic process flow.
